DE102011008924B4 - Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske - Google Patents

Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske Download PDF

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Publication number
DE102011008924B4
DE102011008924B4 DE102011008924.1A DE102011008924A DE102011008924B4 DE 102011008924 B4 DE102011008924 B4 DE 102011008924B4 DE 102011008924 A DE102011008924 A DE 102011008924A DE 102011008924 B4 DE102011008924 B4 DE 102011008924B4
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DE
Germany
Prior art keywords
euv mask
ion beam
hydrogen
ion
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102011008924.1A
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German (de)
English (en)
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DE102011008924A1 (de
Inventor
Takashi Ogawa
Hiroshi Oba
Fumio Aramaki
Anto Yasaka
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Hitachi High Tech Science Corp
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Hitachi High Tech Science Corp
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Publication date
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Publication of DE102011008924A1 publication Critical patent/DE102011008924A1/de
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
DE102011008924.1A 2010-02-02 2011-01-19 Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske Expired - Fee Related DE102011008924B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010021540 2010-02-02
JP2010021540 2010-02-02
JP2010269780A JP5662123B2 (ja) 2010-02-02 2010-12-02 Ｅｕｖマスク修正装置および方法
JP2010269780 2010-12-02

Publications (2)

Publication Number Publication Date
DE102011008924A1 DE102011008924A1 (de) 2011-08-04
DE102011008924B4 true DE102011008924B4 (de) 2020-10-22

Family

ID=44316277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011008924.1A Expired - Fee Related DE102011008924B4 (de) 2010-02-02 2011-01-19 Defekt-Reparaturvorrichtung und -verfahren für EUV-Maske

Country Status (3)

Country Link
US (1) US8460842B2 (enExample)
JP (1) JP5662123B2 (enExample)
DE (1) DE102011008924B4 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9249501B2 (en) * 2011-05-18 2016-02-02 Carl Zeiss Smt Gmbh Surface correction on coated mirrors
US20140102881A1 (en) * 2012-10-12 2014-04-17 Cymer Inc. Method of and apparatus for in-situ repair of reflective optic
JP6490917B2 (ja) * 2013-08-23 2019-03-27 株式会社日立ハイテクサイエンス 修正装置
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
JP6501891B2 (ja) 2015-08-20 2019-04-17 株式会社日立ハイテクノロジーズ イオンビーム装置およびガス電界電離イオン源の洗浄方法
US9791771B2 (en) * 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
DE102018207882A1 (de) * 2018-05-18 2019-11-21 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells
JP7479810B2 (ja) * 2019-09-24 2024-05-09 株式会社日立ハイテクサイエンス 液体金属イオン源及び集束イオンビーム装置
TW202522117A (zh) * 2019-09-26 2025-06-01 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
DE102020210175B4 (de) * 2020-08-11 2022-03-03 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur analyse und/oder bearbeitung einer maske für die lithographie
DE102021203075A1 (de) * 2021-03-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren, vorrichtung und computerprogramm zur reparatur eines maskendefekts
CN119077278B (zh) * 2024-11-01 2025-02-21 河南科技学院 一种智能射流电沉积自动修复设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010037994A1 (en) * 2000-03-30 2001-11-08 Kabushiki Kaisha Toshiba Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device
JP2009210805A (ja) * 2008-03-04 2009-09-17 Sii Nanotechnology Inc Ｅｕｖｌマスクの加工方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2765065B2 (ja) * 1989-06-30 1998-06-11 ソニー株式会社 クロム系膜のパターン形成方法
JPH1021841A (ja) * 1996-06-27 1998-01-23 Nissin Electric Co Ltd イオンビーム立上げ方法
JP2002319362A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 走査電子顕微鏡用９０°変換試料台
JP2004039453A (ja) * 2002-07-03 2004-02-05 Seiko Instruments Inc 微細ステンシル構造修正装置
SG115621A1 (en) * 2003-02-24 2005-10-28 Asml Netherlands Bv Method and device for measuring contamination of a surface of a component of a lithographic apparatus
JP2005260057A (ja) * 2004-03-12 2005-09-22 Sii Nanotechnology Inc Ｅｕｖリソグラフィ用マスクの黒欠陥修正方法
JP4926383B2 (ja) * 2004-05-17 2012-05-09 大日本印刷株式会社 フォトマスクの欠陥修正方法
JP2007103108A (ja) * 2005-10-03 2007-04-19 Sii Nanotechnology Inc 集束イオンビームによる加工方法
KR100873154B1 (ko) * 2008-01-30 2008-12-10 한국표준과학연구원 포토 마스크의 수리장치 및 이를 이용한 수리방법
JP2009188047A (ja) * 2008-02-04 2009-08-20 Sii Nanotechnology Inc Ｅｕｖｌマスクの黒欠陥修正方法
WO2009147894A1 (ja) * 2008-06-05 2009-12-10 株式会社日立ハイテクノロジーズ イオンビーム装置
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010037994A1 (en) * 2000-03-30 2001-11-08 Kabushiki Kaisha Toshiba Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device
JP2009210805A (ja) * 2008-03-04 2009-09-17 Sii Nanotechnology Inc Ｅｕｖｌマスクの加工方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
translation JP 2009 - 210 805 A *

Also Published As

Publication number Publication date
US8460842B2 (en) 2013-06-11
JP5662123B2 (ja) 2015-01-28
US20110189593A1 (en) 2011-08-04
JP2011181894A (ja) 2011-09-15
DE102011008924A1 (de) 2011-08-04

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