JP2012074194A5 - - Google Patents

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Publication number
JP2012074194A5
JP2012074194A5 JP2010217084A JP2010217084A JP2012074194A5 JP 2012074194 A5 JP2012074194 A5 JP 2012074194A5 JP 2010217084 A JP2010217084 A JP 2010217084A JP 2010217084 A JP2010217084 A JP 2010217084A JP 2012074194 A5 JP2012074194 A5 JP 2012074194A5
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JP
Japan
Prior art keywords
charged particle
sample
particle beam
thin film
integer
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Application number
JP2010217084A
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English (en)
Japanese (ja)
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JP5442572B2 (ja
JP2012074194A (ja
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Publication date
Application filed filed Critical
Priority to JP2010217084A priority Critical patent/JP5442572B2/ja
Priority claimed from JP2010217084A external-priority patent/JP5442572B2/ja
Priority to US13/876,274 priority patent/US9257273B2/en
Priority to EP11828920.6A priority patent/EP2624279B1/en
Priority to PCT/JP2011/071578 priority patent/WO2012043363A1/ja
Publication of JP2012074194A publication Critical patent/JP2012074194A/ja
Publication of JP2012074194A5 publication Critical patent/JP2012074194A5/ja
Application granted granted Critical
Publication of JP5442572B2 publication Critical patent/JP5442572B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010217084A 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 Expired - Fee Related JP5442572B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010217084A JP5442572B2 (ja) 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法
US13/876,274 US9257273B2 (en) 2010-09-28 2011-09-22 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
EP11828920.6A EP2624279B1 (en) 2010-09-28 2011-09-22 Charged particle beam device, thin film forming method, defect correction method and device fabrication method
PCT/JP2011/071578 WO2012043363A1 (ja) 2010-09-28 2011-09-22 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010217084A JP5442572B2 (ja) 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法

Publications (3)

Publication Number Publication Date
JP2012074194A JP2012074194A (ja) 2012-04-12
JP2012074194A5 true JP2012074194A5 (enExample) 2012-08-02
JP5442572B2 JP5442572B2 (ja) 2014-03-12

Family

ID=45892814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010217084A Expired - Fee Related JP5442572B2 (ja) 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法

Country Status (4)

Country Link
US (1) US9257273B2 (enExample)
EP (1) EP2624279B1 (enExample)
JP (1) JP5442572B2 (enExample)
WO (1) WO2012043363A1 (enExample)

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DE102010055564A1 (de) * 2010-12-23 2012-06-28 Johann-Wolfgang-Goethe Universität Frankfurt am Main Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat
JP6529264B2 (ja) * 2014-01-22 2019-06-12 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および試料観察方法
EP3189540A4 (en) * 2014-09-05 2018-08-08 Tel Epion Inc. Process gas enhancement for beam treatment of a substrate
JP6703903B2 (ja) * 2016-06-16 2020-06-03 株式会社日立製作所 微細構造体の加工方法および微細構造体の加工装置
KR102385038B1 (ko) * 2020-03-16 2022-04-12 티오에스주식회사 단결정 금속산화물 반도체 에피 성장 장치
KR102336228B1 (ko) * 2020-04-06 2021-12-09 티오에스주식회사 챔버 분리형 에피 성장 장치

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KR0123046B1 (ko) * 1993-08-31 1997-11-24 배순훈 콤팩트 디스크 체인저
US5700526A (en) 1995-05-04 1997-12-23 Schlumberger Technologies Inc. Insulator deposition using focused ion beam
JPH0945922A (ja) * 1995-07-27 1997-02-14 Showa Denko Kk 多結晶シリコン膜の形成方法
JP2000012465A (ja) * 1998-06-22 2000-01-14 Sharp Corp シリコン膜の形成方法及び太陽電池の製造方法
KR100702555B1 (ko) 1999-03-30 2007-04-04 제이에스알 가부시끼가이샤 실리콘 산화막의 형성 방법
WO2000065406A1 (en) * 1999-04-21 2000-11-02 Seiko Instruments Inc. Method of correcting phase shift mask and focused ion beam device
JP4031146B2 (ja) * 1999-04-22 2008-01-09 エスアイアイ・ナノテクノロジー株式会社 表示素子の修正装置
TWI281921B (en) 2000-03-13 2007-06-01 Jsr Corp Novel cyclosilane compound, and solution composition and process for forming a silicon film
JP3424232B2 (ja) * 2000-03-13 2003-07-07 ジェイエスアール株式会社 シリコン膜の形成方法
JP2002087809A (ja) * 2000-09-11 2002-03-27 Jsr Corp シリコン膜の形成方法
JP3745959B2 (ja) * 2000-12-28 2006-02-15 セイコーエプソン株式会社 シリコン薄膜パターンの形成方法
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JP5384786B2 (ja) * 2006-11-14 2014-01-08 株式会社日立ハイテクノロジーズ 荷電ビーム装置、及びその鏡体
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