JP5883025B2 - 基板上へのシリコンの析出法 - Google Patents
基板上へのシリコンの析出法 Download PDFInfo
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- JP5883025B2 JP5883025B2 JP2013545114A JP2013545114A JP5883025B2 JP 5883025 B2 JP5883025 B2 JP 5883025B2 JP 2013545114 A JP2013545114 A JP 2013545114A JP 2013545114 A JP2013545114 A JP 2013545114A JP 5883025 B2 JP5883025 B2 JP 5883025B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/4551—Jet streams
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Description
8 粒子線照射装置
14 ビーム
16 ガス注入システム
20 前駆体
26 表面
32 基板
38 堆積物
50 接触部パターン
52 接触部パターン
54 接触部パターン
56 接触部パターン
58 接触部パターン
60 接触部パターン
80 X座標
86 Y座標
92 曲線
Claims (8)
- 荷電粒子の集束ビームを利用して基板上にシリコンを析出させる方法であって、
シリコンを含有する前駆体を供給すると共に、この前駆体に作用する前記ビームを発生し、
前記基板のすぐ近くで前記ビームにより前記前駆体の分解を引き起こすことによって、前記基板上にシリコンを析出させることを含み、
前記前駆体として、ネオペンタシラン、直鎖状ペンタシラン及び直鎖状ヘキサシランからなる群から選択されるポリシランを使用する、方法。 - 前記前駆体としてネオペンタシランを使用する請求項1に記載の方法。
- 前記荷電粒子が電子である請求項1又は請求項2に記載の方法。
- 前記荷電粒子がイオンである請求項1又は請求項2に記載の方法。
- 前記基板上で前記ビームの走査を行う請求項1〜4のいずれか1項に記載の方法。
- 前記ビームを走査型電子顕微鏡により発生して走査を行う請求項5に記載の方法。
- 前記前駆体をガス注入システムによって供給する請求項1〜6のいずれか1項に記載の方法。
- 室温で実施する、請求項1〜7のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010055564A DE102010055564A1 (de) | 2010-12-23 | 2010-12-23 | Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat |
DE102010055564.9 | 2010-12-23 | ||
PCT/EP2011/006543 WO2012084261A1 (de) | 2010-12-23 | 2011-12-23 | Verfahren und vorrichtung zur abscheidung von silizium auf einem substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014501216A JP2014501216A (ja) | 2014-01-20 |
JP5883025B2 true JP5883025B2 (ja) | 2016-03-09 |
Family
ID=45524475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013545114A Expired - Fee Related JP5883025B2 (ja) | 2010-12-23 | 2011-12-23 | 基板上へのシリコンの析出法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140295105A1 (ja) |
EP (1) | EP2655685A1 (ja) |
JP (1) | JP5883025B2 (ja) |
DE (1) | DE102010055564A1 (ja) |
WO (1) | WO2012084261A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013004116A1 (de) | 2013-03-08 | 2014-09-11 | Johann Wolfgang Goethe-Universität | Verfahren zum Optimieren eines Abscheidungsprozesses, Verfahren zum Einstellen einer Depositionsanlage und Depositionsanlage |
DE102013020518A1 (de) | 2013-12-11 | 2015-06-11 | Forschungszentrum Jülich GmbH Fachbereich Patente | Verfahren und Vorrichtung zur Polymerisation einer Zusammensetzung enthaltend Hydridosilane und anschließenden Verwendung der Polymerisate zur Herstellung von siliziumhaltigen Schichten |
DE102014223465A1 (de) * | 2014-11-18 | 2016-05-19 | Evonik Degussa Gmbh | Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308910A (ja) * | 1987-06-11 | 1988-12-16 | Nikon Corp | エネルギ−線照射による薄膜の製造方法及びそれに使用される装置 |
JPH06191821A (ja) * | 1992-12-22 | 1994-07-12 | Showa Denko Kk | シリコン膜形成用の高次シラン含有溶液 |
JPH0945922A (ja) * | 1995-07-27 | 1997-02-14 | Showa Denko Kk | 多結晶シリコン膜の形成方法 |
JPH11349321A (ja) * | 1998-06-05 | 1999-12-21 | Osaka Gas Co Ltd | 機能性珪素材料の製法 |
JP2000232047A (ja) * | 1999-02-09 | 2000-08-22 | Nikon Corp | 散乱ステンシル型レチクルの修正方法 |
US6440615B1 (en) * | 1999-02-09 | 2002-08-27 | Nikon Corporation | Method of repairing a mask with high electron scattering and low electron absorption properties |
US20080138955A1 (en) * | 2006-12-12 | 2008-06-12 | Zhiyuan Ye | Formation of epitaxial layer containing silicon |
US8486191B2 (en) * | 2009-04-07 | 2013-07-16 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
JP5442572B2 (ja) * | 2010-09-28 | 2014-03-12 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 |
-
2010
- 2010-12-23 DE DE102010055564A patent/DE102010055564A1/de not_active Ceased
-
2011
- 2011-12-23 JP JP2013545114A patent/JP5883025B2/ja not_active Expired - Fee Related
- 2011-12-23 EP EP11811328.1A patent/EP2655685A1/de not_active Withdrawn
- 2011-12-23 US US13/996,441 patent/US20140295105A1/en not_active Abandoned
- 2011-12-23 WO PCT/EP2011/006543 patent/WO2012084261A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
DE102010055564A1 (de) | 2012-06-28 |
WO2012084261A1 (de) | 2012-06-28 |
JP2014501216A (ja) | 2014-01-20 |
US20140295105A1 (en) | 2014-10-02 |
EP2655685A1 (de) | 2013-10-30 |
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