JP5442572B2 - 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 - Google Patents

荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 Download PDF

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JP5442572B2
JP5442572B2 JP2010217084A JP2010217084A JP5442572B2 JP 5442572 B2 JP5442572 B2 JP 5442572B2 JP 2010217084 A JP2010217084 A JP 2010217084A JP 2010217084 A JP2010217084 A JP 2010217084A JP 5442572 B2 JP5442572 B2 JP 5442572B2
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Japan
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charged particle
sample
particle beam
thin film
gas
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Expired - Fee Related
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JP2010217084A
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Japanese (ja)
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JP2012074194A (ja
JP2012074194A5 (enExample
Inventor
喜弘 小山
行人 八坂
達也 下田
安生 松木
陵 川尻
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JSR Corp
Japan Science and Technology Agency
Hitachi High Tech Science Corp
National Institute of Japan Science and Technology Agency
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JSR Corp
Japan Science and Technology Agency
Hitachi High Tech Science Corp
National Institute of Japan Science and Technology Agency
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Priority to JP2010217084A priority Critical patent/JP5442572B2/ja
Priority to US13/876,274 priority patent/US9257273B2/en
Priority to EP11828920.6A priority patent/EP2624279B1/en
Priority to PCT/JP2011/071578 priority patent/WO2012043363A1/ja
Publication of JP2012074194A publication Critical patent/JP2012074194A/ja
Publication of JP2012074194A5 publication Critical patent/JP2012074194A5/ja
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
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JP2010217084A 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 Expired - Fee Related JP5442572B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010217084A JP5442572B2 (ja) 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法
US13/876,274 US9257273B2 (en) 2010-09-28 2011-09-22 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
EP11828920.6A EP2624279B1 (en) 2010-09-28 2011-09-22 Charged particle beam device, thin film forming method, defect correction method and device fabrication method
PCT/JP2011/071578 WO2012043363A1 (ja) 2010-09-28 2011-09-22 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法

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JP2010217084A JP5442572B2 (ja) 2010-09-28 2010-09-28 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法

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JP2012074194A JP2012074194A (ja) 2012-04-12
JP2012074194A5 JP2012074194A5 (enExample) 2012-08-02
JP5442572B2 true JP5442572B2 (ja) 2014-03-12

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US (1) US9257273B2 (enExample)
EP (1) EP2624279B1 (enExample)
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WO (1) WO2012043363A1 (enExample)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
DE102010055564A1 (de) * 2010-12-23 2012-06-28 Johann-Wolfgang-Goethe Universität Frankfurt am Main Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat
JP6529264B2 (ja) * 2014-01-22 2019-06-12 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および試料観察方法
EP3189540A4 (en) * 2014-09-05 2018-08-08 Tel Epion Inc. Process gas enhancement for beam treatment of a substrate
JP6703903B2 (ja) * 2016-06-16 2020-06-03 株式会社日立製作所 微細構造体の加工方法および微細構造体の加工装置
KR102385038B1 (ko) * 2020-03-16 2022-04-12 티오에스주식회사 단결정 금속산화물 반도체 에피 성장 장치
KR102336228B1 (ko) * 2020-04-06 2021-12-09 티오에스주식회사 챔버 분리형 에피 성장 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145991A (en) * 1965-03-12 1969-03-19 Mullard Ltd Improvements in and relating to methods of manufacturing electrical circuit arrangements
KR0123046B1 (ko) * 1993-08-31 1997-11-24 배순훈 콤팩트 디스크 체인저
US5700526A (en) 1995-05-04 1997-12-23 Schlumberger Technologies Inc. Insulator deposition using focused ion beam
JPH0945922A (ja) * 1995-07-27 1997-02-14 Showa Denko Kk 多結晶シリコン膜の形成方法
JP2000012465A (ja) * 1998-06-22 2000-01-14 Sharp Corp シリコン膜の形成方法及び太陽電池の製造方法
KR100702555B1 (ko) 1999-03-30 2007-04-04 제이에스알 가부시끼가이샤 실리콘 산화막의 형성 방법
WO2000065406A1 (en) * 1999-04-21 2000-11-02 Seiko Instruments Inc. Method of correcting phase shift mask and focused ion beam device
JP4031146B2 (ja) * 1999-04-22 2008-01-09 エスアイアイ・ナノテクノロジー株式会社 表示素子の修正装置
TWI281921B (en) 2000-03-13 2007-06-01 Jsr Corp Novel cyclosilane compound, and solution composition and process for forming a silicon film
JP3424232B2 (ja) * 2000-03-13 2003-07-07 ジェイエスアール株式会社 シリコン膜の形成方法
JP2002087809A (ja) * 2000-09-11 2002-03-27 Jsr Corp シリコン膜の形成方法
JP3745959B2 (ja) * 2000-12-28 2006-02-15 セイコーエプソン株式会社 シリコン薄膜パターンの形成方法
JP4567321B2 (ja) * 2003-11-28 2010-10-20 エスアイアイ・ナノテクノロジー株式会社 集積回路の配線変更方法
US7314513B1 (en) * 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
JP2008012391A (ja) 2006-07-03 2008-01-24 Clean Technology Kk 薄膜塗布装置のノズル構造
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
JP5384786B2 (ja) * 2006-11-14 2014-01-08 株式会社日立ハイテクノロジーズ 荷電ビーム装置、及びその鏡体
JP5183912B2 (ja) * 2006-11-21 2013-04-17 株式会社日立ハイテクノロジーズ 荷電ビーム装置、及びそのクリーニング方法
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
JP5181105B2 (ja) * 2007-03-02 2013-04-10 株式会社日立ハイテクサイエンス 集積回路の修正配線形成方法
JP2010079842A (ja) 2008-09-29 2010-04-08 Hitachi Software Eng Co Ltd 電子新聞保存管理システム及び新聞記事データ管理方法
JP5604044B2 (ja) * 2009-01-09 2014-10-08 独立行政法人科学技術振興機構 高次シラン組成物および膜付基板の製造方法
JP2010206161A (ja) 2009-02-04 2010-09-16 Sony Corp 成膜方法および半導体装置の製造方法

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US9257273B2 (en) 2016-02-09
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