JP5677700B2 - ビーム誘起処理における窒素ベース化合物の使用 - Google Patents
ビーム誘起処理における窒素ベース化合物の使用 Download PDFInfo
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Description
多くの付着前駆体ガスが知られており、例えばOrloff、Handbook of Charged Particle Optics、CRC Press(1997)に記載されている。実用的なEBIDプロセスに役立つ各種付着前駆体ガスにとって好ましいいくつかの特性が存在する。
本発明のいくつかの実施形態によれば、追加のガスを使用して付着膜を純化することによって、付着膜の質(例えば純度、導電率、均質性など)が向上する。付着膜純化の具体的な目的はしばしば炭素汚染物の除去である。これらの汚染物は膜の導電率を低下させる傾向があり、それにより多くの用途において膜の性能を低下させる。
(b)アンモニアは、表面において再結合する強い傾向を有する2つの種に解離しない。
図2〜5は、EBID/EBIE処理室のさまざまな構成を示す。EBIDおよび/またはEBIEを使用して、基板上にパターン形成された構造を形成する処理室の構成は、いくつかの設計および動作パラメータによって特徴づけることができる。
加工物の表面に付着前駆体ガスを供給するステップと、
加工物の表面に向かって、窒素含有還元化合物を含む純化化合物を供給するステップと、
加工物の表面の局所領域に向かってビームを誘導するステップであり、ビームが、前駆体ガスの分解を引き起こして、加工物の表面に付着物を形成し、この付着した材料が汚染物を含み、ビームが、純化化合物と基板上に付着した材料との間の化学反応を誘起させて、汚染物を除去し、同じ方法を使用して純化化合物を使用せずに付着させた材料よりも汚染が少ない付着材料を提供する、ステップと
を使用して、加工物の表面に材料を付着させることができる。
前項で説明したビーム誘起付着システムおよびプロセスと対応するビーム誘起エッチング・システムおよびプロセスとの間には多くの類似点がある。以下の3つの態様について特徴づけることができる。
(2)エッチング前駆体ガスおよびFPCの選択(後者は、エッチング対象材料の酸化を抑制するために使用される)
(3)エッチング前駆体ガスのエッチング対象領域への輸送を助けるために使用される(任意選択の)キャリヤ・ガス
一般に、(1)に関する可能性は同じである。すなわち、エッチング処理室と付着処理室は同じ物理構成を有することができる。(2)では、エッチングのために、付着のために使用される付着前駆体ガスの代わりに、必要なエッチング前駆体ガスおよびエッチング対象材料の酸化を抑制する働きをする任意選択のFPCが使用される。FPC候補としてこれまでに論じたさまざまな窒素ベースの還元ガスも、エッチング前駆体ガス、特にダイヤモンド、フォトレジストなどの炭素含有材料をエッチングするエッチング前駆体ガスの適当な選択肢である。(3)に関しては、エッチング前駆体ガスに対するキャリヤ・ガスの考慮すべき点も、付着前駆体ガスを使用した付着プロセスに対するものと本質的に同じである。
加工物の表面に、窒素含有還元エッチング前駆体ガスを供給するステップと、
加工物上の局所領域にビームを誘導するステップであり、このビームが、窒素含有還元エッチング前駆体ガスと加工物の材料との間の反応を誘起させて、表面をエッチングする、ステップと
を使用して、加工物を処理することができる。
集束ビームの源と、
付着前駆体ガスまたはエッチング前駆体ガスの源と、
窒素含有還元純化化合物の源と、
ビーム・システムを制御するコンピュータであり、付着前駆体ガスまたはエッチング前駆体ガスおよび前記純化化合物を加工物の表面に供給し、加工物上にビームを、所定のパターンを描くように誘導して、付着前駆体ガスの分解により材料を付着させ、付着した材料を、純化化合物の分解により純化し、または加工物をエッチングするためのプログラム命令を記憶した記憶装置を含むコンピュータと
を備えるビーム・システムを提供する。
Claims (20)
- 加工物の表面に材料を付着させる方法であって、
前記加工物の表面に向かって純化化合物を含有するガスを供給しながら前記加工物の表面に付着前駆体ガスを供給するステップであって、前記純化化合物を含有するガスは前記付着前駆体ガスとは異なっており、前記純化化合物は窒素含有還元化合物を含む、ステップと、
前記加工物の表面の局所領域に向かってビームを誘導するステップであり、前記ビームが、前記前駆体ガスの分解を引き起こして、前記加工物の表面に付着物を形成し、この付着した材料が汚染物を含み、前記純化化合物が、前記汚染物の濃度を低下させ、同じ方法を使用するが純化化合物を使用せずに付着させた材料よりも汚染が少ない付着材料を提供する、ステップと
を含む方法。 - 前記ビームが、電子ビーム、イオン・ビーム、クラスタ・ビーム、中性粒子ビームまたはレーザ・ビームを含む、請求項1に記載の方法。
- 前記純化化合物の存在が材料の付着速度を低下させない、請求項1に記載の方法。
- 前記純化化合物がNH3を含む、請求項1に記載の方法。
- 前記付着前駆体が有機金属化合物を含む、請求項4に記載の方法。
- 前記汚染物が炭素である、請求項1に記載の方法。
- 前記純化化合物が、ヒドラジンまたは置換ヒドラジン化合物を含む、請求項1に記載の方法。
- 前記付着前駆体ガスが金属および炭素を含む、請求項7に記載の方法。
- 前記純化化合物が、アミン、置換アミン化合物、アミド、置換アミド化合物またはフォーミング・ガスを含む、請求項1に記載の方法。
- 前記加工物が試料室内に配置され、前記前駆体ガスおよび前記純化化合物が、前記加工物の表面における前記前駆体ガスおよび前記純化化合物の圧力が前記試料室の前記加工物の表面から離れた部分における前記前駆体ガスおよび前記純化化合物の圧力よりも大きくなるように前記加工物の表面に十分に近い位置に配置されたノズルによって、前記加工物の表面に向かって誘導される、請求項1に記載の方法。
- 前記加工物が試料室内に配置され、前記前駆体ガスと前記純化化合物を、異なる開口を通って前記試料室に導入する、請求項1に記載の方法。
- 前記ビームが、直径1ミクロン未満の荷電粒子ビームである、請求項1に記載の方法。
- 前記加工物が、付着前駆体ガスおよび純化化合物を含む試料室内に配置され、前記試料室内の全体の圧力が0.001ミリバールよりも大きい、請求項1に記載の方法。
- 前記加工物が真空室内に配置され、前記真空室に導入する前に、前記前駆体ガスと前記純化化合物が混合される、請求項1に記載の方法。
- 前記純化化合物が、同じ方法を使用するが純化化合物を使用せずに得られる付着速度を低下させない、請求項1から14のいずれか一項に記載の方法。
- 加工物を処理するビーム・システムであって、
集束ビームの源と、
付着前駆体を含有する第1のガスの源と、
窒素含有還元化合物を含有する純化化合物の源と、
前記ビーム・システムを制御するコンピュータであり、前記第1のガスおよび前記純化化合物を含有する第2のガスを前記加工物の表面に同時に供給し、前記加工物上に前記ビームを、所定のパターンを描くように誘導して、前記付着前駆体の分解により材料を付着させ、付着した材料を、前記純化化合物の分解により純化するためのプログラム命令を記憶した記憶装置を含むコンピュータと
を備えるビーム・システム。 - 前記集束ビームの前記源が荷電粒子ビーム・カラムである、請求項16に記載のシステム。
- 前記集束ビームの前記源が荷電電子ビーム・カラムである、請求項16に記載のシステム。
- 純化化合物の前記源が、NH3、ヒドラジンまたは置換ヒドラジン化合物の源を含む、請求項16に記載のシステム。
- 純化化合物の前記源が、アミン、置換アミン化合物、アミド、置換アミド化合物またはフォーミング・ガスの源を含む、請求項16に記載のシステム。
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2501839B1 (en) | 2009-11-16 | 2016-01-27 | FEI Company | Gas delivery for beam processing systems |
EP2402475A1 (en) | 2010-06-30 | 2012-01-04 | Fei Company | Beam-induced deposition at cryogenic temperatures |
US10825685B2 (en) * | 2010-08-23 | 2020-11-03 | Exogenesis Corporation | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
US8853078B2 (en) | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
RU2522872C2 (ru) * | 2012-06-13 | 2014-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ азотирования деталей машин с получением наноструктурированного приповерхностного слоя и состав слоя |
US10023955B2 (en) | 2012-08-31 | 2018-07-17 | Fei Company | Seed layer laser-induced deposition |
US8872105B2 (en) * | 2013-02-19 | 2014-10-28 | Fei Company | In situ reactivation of fluorescence marker |
EP2787523B1 (en) | 2013-04-03 | 2016-02-10 | Fei Company | Low energy ion milling or deposition |
US9123506B2 (en) | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
FR3011540B1 (fr) * | 2013-10-07 | 2016-01-01 | Centre Nat Rech Scient | Procede et systeme de structuration submicrometrique d'une surface de substrat |
US20150225845A1 (en) * | 2014-02-12 | 2015-08-13 | Electronics And Telecommunications Research Institute | Method for forming metal oxide thin film and device for printing metal oxide thin film |
EP3062329B1 (en) * | 2015-02-25 | 2016-12-14 | Fei Company | Multi-source GIS for particle-optical apparatus |
US9799490B2 (en) | 2015-03-31 | 2017-10-24 | Fei Company | Charged particle beam processing using process gas and cooled surface |
US9633816B2 (en) | 2015-05-18 | 2017-04-25 | Fei Company | Electron beam microscope with improved imaging gas and method of use |
US10128082B2 (en) * | 2015-07-24 | 2018-11-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
US10538844B2 (en) | 2015-09-11 | 2020-01-21 | Fei Company | Nanofabrication using a new class of electron beam induced surface processing techniques |
KR101723923B1 (ko) * | 2015-11-11 | 2017-04-11 | 참엔지니어링(주) | 증착 장치 |
US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
US10865477B2 (en) * | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
US10501851B2 (en) * | 2016-05-12 | 2019-12-10 | Fei Company | Attachment of nano-objects to beam-deposited structures |
US20220305584A1 (en) * | 2021-03-24 | 2022-09-29 | Fei Company | In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination |
CN113403572A (zh) * | 2021-04-19 | 2021-09-17 | 江苏集创原子团簇科技研究院有限公司 | 一种带电粒子束处理工件的方法与设备 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US525908A (en) | 1894-09-11 | Convertible carriage-body | ||
US4266985A (en) * | 1979-05-18 | 1981-05-12 | Fujitsu Limited | Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate |
JPH0830272B2 (ja) | 1983-08-22 | 1996-03-27 | 日本電気株式会社 | 薄膜形成方法 |
US4605566A (en) * | 1983-08-22 | 1986-08-12 | Nec Corporation | Method for forming thin films by absorption |
US4522886A (en) * | 1984-10-09 | 1985-06-11 | Allied Corporation | Method of ion beam synthesis of thin silicon nitride films and resulting articles |
DE3513633C2 (de) * | 1985-04-16 | 1994-06-16 | Polymer Physik Gmbh | Vorrichtung zur Entschwefelung und Denitrierung von Rauchgasen durch Elektronenbestrahlung |
US4845054A (en) * | 1985-06-14 | 1989-07-04 | Focus Semiconductor Systems, Inc. | Low temperature chemical vapor deposition of silicon dioxide films |
JPS62195662A (ja) * | 1986-02-24 | 1987-08-28 | Seiko Instr & Electronics Ltd | マスクリペア方法及び装置 |
JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ic素子における配線接続方法 |
JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
JPS6380525A (ja) * | 1986-09-24 | 1988-04-11 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
US4735921A (en) * | 1987-05-29 | 1988-04-05 | Patrick Soukiassian | Nitridation of silicon and other semiconductors using alkali metal catalysts |
JPH0262039A (ja) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
JP3004298B2 (ja) | 1989-03-31 | 2000-01-31 | 株式会社東芝 | 絶縁膜堆積方法及びそれに用いる集束イオンビーム装置 |
US5083033A (en) * | 1989-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Method of depositing an insulating film and a focusing ion beam apparatus |
JPH02274867A (ja) * | 1989-04-17 | 1990-11-09 | Seiko Instr Inc | 複合材料膜の製造方法 |
US5104684A (en) * | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
US5196102A (en) * | 1991-08-08 | 1993-03-23 | Microelectronics And Computer Technology Corporation | Method and apparatus for applying a compound of a metal and a gas onto a surface |
JPH0799791B2 (ja) * | 1992-04-15 | 1995-10-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 透明基板上の回路ライン接続方法 |
DE4222021C2 (de) * | 1992-07-04 | 1994-06-23 | Christian Dipl Chem Terfloth | Verbindungen zur Abscheidung von Kupferschichten |
ATE146304T1 (de) * | 1993-07-30 | 1996-12-15 | Ibm | Vorrichtung und verfahren um feine metal-linie auf einem substrat abzulegen |
US5482802A (en) * | 1993-11-24 | 1996-01-09 | At&T Corp. | Material removal with focused particle beams |
US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
AU2914095A (en) * | 1994-06-28 | 1996-01-25 | Fei Company | Charged particle deposition of electrically insulating films |
US5700526A (en) | 1995-05-04 | 1997-12-23 | Schlumberger Technologies Inc. | Insulator deposition using focused ion beam |
US5948541A (en) * | 1996-04-04 | 1999-09-07 | Kennametal Inc. | Boron and nitrogen containing coating and method for making |
WO1997038355A1 (en) | 1996-04-08 | 1997-10-16 | Micrion Corporation | Systems and methods for deposition of dielectric films |
JPH1090876A (ja) | 1996-09-17 | 1998-04-10 | Toshiba Corp | 欠陥修正方法および装置 |
US6042738A (en) * | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
US5976976A (en) * | 1997-08-21 | 1999-11-02 | Micron Technology, Inc. | Method of forming titanium silicide and titanium by chemical vapor deposition |
US6395128B2 (en) * | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
US6261850B1 (en) * | 1998-09-03 | 2001-07-17 | Micron Technology, Inc. | Direct writing of low carbon conductive material |
US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
US6616972B1 (en) * | 1999-02-24 | 2003-09-09 | Air Products And Chemicals, Inc. | Synthesis of metal oxide and oxynitride |
US6140249A (en) * | 1999-08-27 | 2000-10-31 | Micron Technology, Inc. | Low dielectric constant dielectric films and process for making the same |
KR100799014B1 (ko) * | 2000-11-29 | 2008-01-28 | 에스아이아이 나노 테크놀로지 가부시키가이샤 | 초 미세 입체구조의 제조 방법 및 그 장치 |
AU2002232844A1 (en) | 2000-12-06 | 2002-06-18 | Angstron Systems, Inc. | System and method for modulated ion-induced atomic layer deposition (mii-ald) |
US6492261B2 (en) * | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
US6838380B2 (en) * | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
JP2004537758A (ja) * | 2001-07-27 | 2004-12-16 | エフ・イ−・アイ・カンパニー | 電子ビーム処理 |
US6812152B2 (en) * | 2001-08-09 | 2004-11-02 | Comlase Ab | Method to obtain contamination free laser mirrors and passivation of these |
KR100974778B1 (ko) * | 2003-06-30 | 2010-08-06 | 삼성전자주식회사 | 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법 |
US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
US7824498B2 (en) * | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
ATE532203T1 (de) * | 2004-08-27 | 2011-11-15 | Fei Co | Lokalisierte plasmabehandlung |
US7670956B2 (en) * | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
US7691653B2 (en) * | 2005-08-26 | 2010-04-06 | Sharp Kabushiki Kaisha | Nitride semiconductor laser element and method for manufacturing the same |
US7288332B2 (en) * | 2005-10-06 | 2007-10-30 | Los Almos National Security, Llc | Conductive layer for biaxially oriented semiconductor film growth |
US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
US8921811B2 (en) | 2007-02-06 | 2014-12-30 | Fei Company | High pressure charged particle beam system |
US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
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2009
- 2009-09-23 US US12/565,707 patent/US8617668B2/en active Active
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US20110070381A1 (en) | 2011-03-24 |
EP2309020B1 (en) | 2014-03-05 |
EP2309020A1 (en) | 2011-04-13 |
US8617668B2 (en) | 2013-12-31 |
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