KR101685274B1 - 하전 입자선 장치 - Google Patents

하전 입자선 장치 Download PDF

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Publication number
KR101685274B1
KR101685274B1 KR1020147030888A KR20147030888A KR101685274B1 KR 101685274 B1 KR101685274 B1 KR 101685274B1 KR 1020147030888 A KR1020147030888 A KR 1020147030888A KR 20147030888 A KR20147030888 A KR 20147030888A KR 101685274 B1 KR101685274 B1 KR 101685274B1
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South Korea
Prior art keywords
sample
voltage
electrode
electron beam
primary electron
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Korean (ko)
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KR20140143441A (ko
Inventor
이찌로 다찌바나
나오마사 스즈끼
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/263—Contrast, resolution or power of penetration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H01J2237/04756—Changing particle velocity decelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020147030888A 2012-06-15 2013-04-12 하전 입자선 장치 Active KR101685274B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012135297A JP5851352B2 (ja) 2012-06-15 2012-06-15 荷電粒子線装置
JPJP-P-2012-135297 2012-06-15
PCT/JP2013/061010 WO2013187115A1 (ja) 2012-06-15 2013-04-12 荷電粒子線装置

Publications (2)

Publication Number Publication Date
KR20140143441A KR20140143441A (ko) 2014-12-16
KR101685274B1 true KR101685274B1 (ko) 2016-12-09

Family

ID=49757953

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147030888A Active KR101685274B1 (ko) 2012-06-15 2013-04-12 하전 입자선 장치

Country Status (4)

Country Link
US (1) US9324540B2 (enExample)
JP (1) JP5851352B2 (enExample)
KR (1) KR101685274B1 (enExample)
WO (1) WO2013187115A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564291B1 (en) * 2014-01-27 2017-02-07 Mochii, Inc. Hybrid charged-particle beam and light beam microscopy
US9881764B2 (en) 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
WO2018096610A1 (ja) * 2016-11-24 2018-05-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US11056310B2 (en) 2017-01-12 2021-07-06 Hitachi High-Tech Corporation Charged-particle beam device
CN106920723A (zh) * 2017-03-06 2017-07-04 聚束科技（北京）有限公司 一种扫描聚焦系统及电子束控制方法
DE112017007771B4 (de) * 2017-08-24 2023-03-02 Hitachi High-Technologies Corporation Vorrichtung für strahl geladener teilchen und beobachtungsverahren und elementanalyseverfahren unter verwendung derselben
JP6950088B2 (ja) * 2018-05-22 2021-10-13 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の検出器位置調整方法
JP6987233B2 (ja) * 2018-05-22 2021-12-22 株式会社日立ハイテク 荷電粒子線装置及びその軸調整方法
WO2019239546A1 (ja) 2018-06-14 2019-12-19 株式会社日立ハイテクノロジーズ 電子顕微鏡装置
US12001521B2 (en) 2018-11-08 2024-06-04 Hitachi High-Tech Corporation Adjusting method of charged particle beam device and charged particle beam device system
IL283996B2 (en) 2018-12-28 2026-02-01 Asml Netherlands Bv Methods and systems for focusing charged particle beams
WO2021001935A1 (ja) * 2019-07-02 2021-01-07 株式会社日立ハイテク 荷電粒子線装置
US12437965B1 (en) * 2022-08-01 2025-10-07 Mochil, Inc. Charged-particle beam microscope with differential vacuum pressures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151484A (ja) * 2001-11-15 2003-05-23 Jeol Ltd 走査型荷電粒子ビーム装置
JP2007194126A (ja) * 2006-01-20 2007-08-02 Hitachi High-Technologies Corp 走査電子顕微鏡
JP2009026749A (ja) * 2007-06-18 2009-02-05 Hitachi High-Technologies Corp 走査形電子顕微鏡、および走査形電子顕微鏡を用いた撮像方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04302316A (ja) 1991-03-29 1992-10-26 Omron Corp メモリ管理装置
US6667476B2 (en) 1998-03-09 2003-12-23 Hitachi, Ltd. Scanning electron microscope
JP4093662B2 (ja) * 1999-01-04 2008-06-04 株式会社日立製作所 走査形電子顕微鏡
JP3494208B2 (ja) * 1999-03-19 2004-02-09 株式会社日立製作所 走査電子顕微鏡
US6998611B2 (en) 2001-09-06 2006-02-14 Ebara Corporation Electron beam apparatus and device manufacturing method using same
WO2004061892A1 (ja) 2002-12-27 2004-07-22 Advantest Corporation 試料観察装置、及び試料観察方法
JP2006216396A (ja) * 2005-02-04 2006-08-17 Hitachi High-Technologies Corp 荷電粒子線装置
JP2006294627A (ja) 2006-04-27 2006-10-26 Ebara Corp 電子線装置及び該装置を用いたデバイス製造方法
JP5075431B2 (ja) * 2007-02-28 2012-11-21 株式会社日立ハイテクノロジーズ 帯電測定方法、焦点調整方法、及び走査電子顕微鏡
JP5227643B2 (ja) * 2008-04-14 2013-07-03 株式会社日立ハイテクノロジーズ 高分解能でかつ高コントラストな観察が可能な電子線応用装置
JP5205515B2 (ja) * 2009-07-15 2013-06-05 株式会社日立ハイテクノロジーズ 試料電位測定方法、及び荷電粒子線装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151484A (ja) * 2001-11-15 2003-05-23 Jeol Ltd 走査型荷電粒子ビーム装置
JP2007194126A (ja) * 2006-01-20 2007-08-02 Hitachi High-Technologies Corp 走査電子顕微鏡
JP2009026749A (ja) * 2007-06-18 2009-02-05 Hitachi High-Technologies Corp 走査形電子顕微鏡、および走査形電子顕微鏡を用いた撮像方法

Also Published As

Publication number Publication date
JP2014002835A (ja) 2014-01-09
WO2013187115A1 (ja) 2013-12-19
KR20140143441A (ko) 2014-12-16
US20150136979A1 (en) 2015-05-21
JP5851352B2 (ja) 2016-02-03
US9324540B2 (en) 2016-04-26

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