JP2008256572A5 - - Google Patents

Download PDF

Info

Publication number
JP2008256572A5
JP2008256572A5 JP2007100029A JP2007100029A JP2008256572A5 JP 2008256572 A5 JP2008256572 A5 JP 2008256572A5 JP 2007100029 A JP2007100029 A JP 2007100029A JP 2007100029 A JP2007100029 A JP 2007100029A JP 2008256572 A5 JP2008256572 A5 JP 2008256572A5
Authority
JP
Japan
Prior art keywords
electron beam
sample
application apparatus
beam application
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007100029A
Other languages
English (en)
Japanese (ja)
Other versions
JP5103050B2 (ja
JP2008256572A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007100029A priority Critical patent/JP5103050B2/ja
Priority claimed from JP2007100029A external-priority patent/JP5103050B2/ja
Priority to US12/062,940 priority patent/US7633303B2/en
Publication of JP2008256572A publication Critical patent/JP2008256572A/ja
Publication of JP2008256572A5 publication Critical patent/JP2008256572A5/ja
Application granted granted Critical
Publication of JP5103050B2 publication Critical patent/JP5103050B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007100029A 2007-04-06 2007-04-06 電子線応用装置 Expired - Fee Related JP5103050B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007100029A JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置
US12/062,940 US7633303B2 (en) 2007-04-06 2008-04-04 Semiconductor wafer inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007100029A JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置

Publications (3)

Publication Number Publication Date
JP2008256572A JP2008256572A (ja) 2008-10-23
JP2008256572A5 true JP2008256572A5 (enExample) 2010-05-13
JP5103050B2 JP5103050B2 (ja) 2012-12-19

Family

ID=39826401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007100029A Expired - Fee Related JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置

Country Status (2)

Country Link
US (1) US7633303B2 (enExample)
JP (1) JP5103050B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD612879S1 (en) * 1920-10-18 2010-03-30 Tokyo Electron Limited Semiconductor wafer inspection apparatus
JP6219747B2 (ja) * 2014-02-25 2017-10-25 日本電子株式会社 荷電粒子線描画装置
JP7034867B2 (ja) * 2018-08-31 2022-03-14 株式会社ニューフレアテクノロジー 異常判定方法および描画装置
JP7203593B2 (ja) * 2018-12-25 2023-01-13 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102654208B1 (ko) * 2019-05-15 2024-04-04 주식회사 히타치하이테크 검사 장치 조정 시스템 및 검사 장치 조정 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036734A1 (de) * 1980-09-29 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung von widerstaenden und kapazitaeten von elektronischen bauelementen
EP0196804B1 (en) * 1985-03-11 1991-01-23 Nippon Telegraph And Telephone Corporation Method and apparatus for testing integrated electronic device
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding
JPH0682718B2 (ja) * 1985-08-12 1994-10-19 日本電信電話株式会社 電子デバイスの試験装置およびその使用方法
JP2834243B2 (ja) 1989-12-22 1998-12-09 株式会社日立製作所 電子線描画における帯電防止方法
US6002792A (en) * 1993-11-16 1999-12-14 Hamamatsu Photonics Kk Semiconductor device inspection system
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
JP2000314710A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 回路パターンの検査方法及び検査装置
JP4625376B2 (ja) * 2000-02-22 2011-02-02 株式会社日立製作所 電子ビームによる検査方法
JP3711244B2 (ja) * 2001-01-18 2005-11-02 株式会社東芝 ウエハの欠陥検査装置
JP2002252275A (ja) * 2001-02-27 2002-09-06 Riipuru:Kk ウエハの導通機構、導通方法及び電子ビーム近接露光装置
JP3955450B2 (ja) * 2001-09-27 2007-08-08 株式会社ルネサステクノロジ 試料検査方法
JP3859480B2 (ja) * 2001-10-17 2006-12-20 株式会社ルネサステクノロジ 検査方法
JP2006013049A (ja) * 2004-06-24 2006-01-12 Tokyo Seimitsu Co Ltd 試料接地機構、試料接地方法、及び電子線露光装置
JP2006105960A (ja) * 2004-09-13 2006-04-20 Jeol Ltd 試料検査方法及び試料検査装置
JP2006114385A (ja) * 2004-10-15 2006-04-27 Toshiba Corp 電子ビーム装置

Similar Documents

Publication Publication Date Title
Muccillo et al. Flash grain welding in yttria stabilized zirconia
JP2009259444A5 (enExample)
Heinz et al. An investigation of magnetic-field-assisted material removal in micro-EDM for nonmagnetic materials
JP2008256572A5 (enExample)
CN103558249B (zh) 基于脉冲电流电磁热效应的金属构件缺陷红外检测方法
JP2014002835A5 (enExample)
CN103983381B (zh) 真空条件下单颗粒粘附力和带电量的测试系统及测试方法
US20120080596A1 (en) Laser Atom Probe and Laser Atom Probe Analysis Methods
CN106695103B (zh) 一种电子束深熔焊穿透成形实时监控检测装置
JP2018107265A5 (enExample)
JP2011181894A5 (enExample)
Qiu et al. Effects of neutron and gamma radiation on lithium-ion batteries
JP2013206641A5 (enExample)
Said et al. Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: evaluation of the effective cross sections for recombination and trapping
JP5406308B2 (ja) 電子線を用いた試料観察方法及び電子顕微鏡
JP2002118158A5 (enExample)
CN103091698B (zh) 一种质子/电子综合辐照束流注量的检测方法
JP5103050B2 (ja) 電子線応用装置
Ishiyama et al. Direct measurement of nanoscale lithium diffusion in solid battery materials using radioactive tracer of 8Li
JP2006029997A5 (enExample)
WO2008149461A1 (ja) 荷電粒子線検査装置及び荷電粒子線検査方法
TW202127056A (zh) 與晶圓有關的電弧危害的偵測
JP3458548B2 (ja) ワーク電位の測定方法
JP2005333161A5 (enExample)
CN101051039B (zh) 小球探头型单极性带电粒子浓度的测试方法