JP5103050B2 - 電子線応用装置 - Google Patents

電子線応用装置 Download PDF

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Publication number
JP5103050B2
JP5103050B2 JP2007100029A JP2007100029A JP5103050B2 JP 5103050 B2 JP5103050 B2 JP 5103050B2 JP 2007100029 A JP2007100029 A JP 2007100029A JP 2007100029 A JP2007100029 A JP 2007100029A JP 5103050 B2 JP5103050 B2 JP 5103050B2
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JP
Japan
Prior art keywords
sample
electron beam
resistance value
contact resistance
application apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007100029A
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English (en)
Japanese (ja)
Other versions
JP2008256572A5 (enExample
JP2008256572A (ja
Inventor
貴司 古川
夏規 津野
朝暉 程
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2007100029A priority Critical patent/JP5103050B2/ja
Priority to US12/062,940 priority patent/US7633303B2/en
Publication of JP2008256572A publication Critical patent/JP2008256572A/ja
Publication of JP2008256572A5 publication Critical patent/JP2008256572A5/ja
Application granted granted Critical
Publication of JP5103050B2 publication Critical patent/JP5103050B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2008—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated specially adapted for studying electrical or magnetical properties of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2594—Measuring electric fields or potentials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2007100029A 2007-04-06 2007-04-06 電子線応用装置 Expired - Fee Related JP5103050B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007100029A JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置
US12/062,940 US7633303B2 (en) 2007-04-06 2008-04-04 Semiconductor wafer inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007100029A JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置

Publications (3)

Publication Number Publication Date
JP2008256572A JP2008256572A (ja) 2008-10-23
JP2008256572A5 JP2008256572A5 (enExample) 2010-05-13
JP5103050B2 true JP5103050B2 (ja) 2012-12-19

Family

ID=39826401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007100029A Expired - Fee Related JP5103050B2 (ja) 2007-04-06 2007-04-06 電子線応用装置

Country Status (2)

Country Link
US (1) US7633303B2 (enExample)
JP (1) JP5103050B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD612879S1 (en) * 1920-10-18 2010-03-30 Tokyo Electron Limited Semiconductor wafer inspection apparatus
JP6219747B2 (ja) * 2014-02-25 2017-10-25 日本電子株式会社 荷電粒子線描画装置
JP7034867B2 (ja) * 2018-08-31 2022-03-14 株式会社ニューフレアテクノロジー 異常判定方法および描画装置
JP7203593B2 (ja) * 2018-12-25 2023-01-13 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102654208B1 (ko) * 2019-05-15 2024-04-04 주식회사 히타치하이테크 검사 장치 조정 시스템 및 검사 장치 조정 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036734A1 (de) * 1980-09-29 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung von widerstaenden und kapazitaeten von elektronischen bauelementen
EP0196804B1 (en) * 1985-03-11 1991-01-23 Nippon Telegraph And Telephone Corporation Method and apparatus for testing integrated electronic device
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding
JPH0682718B2 (ja) * 1985-08-12 1994-10-19 日本電信電話株式会社 電子デバイスの試験装置およびその使用方法
JP2834243B2 (ja) 1989-12-22 1998-12-09 株式会社日立製作所 電子線描画における帯電防止方法
US6002792A (en) * 1993-11-16 1999-12-14 Hamamatsu Photonics Kk Semiconductor device inspection system
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
JP2000314710A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 回路パターンの検査方法及び検査装置
JP4625376B2 (ja) * 2000-02-22 2011-02-02 株式会社日立製作所 電子ビームによる検査方法
JP3711244B2 (ja) * 2001-01-18 2005-11-02 株式会社東芝 ウエハの欠陥検査装置
JP2002252275A (ja) * 2001-02-27 2002-09-06 Riipuru:Kk ウエハの導通機構、導通方法及び電子ビーム近接露光装置
JP3955450B2 (ja) * 2001-09-27 2007-08-08 株式会社ルネサステクノロジ 試料検査方法
JP3859480B2 (ja) * 2001-10-17 2006-12-20 株式会社ルネサステクノロジ 検査方法
JP2006013049A (ja) * 2004-06-24 2006-01-12 Tokyo Seimitsu Co Ltd 試料接地機構、試料接地方法、及び電子線露光装置
JP2006105960A (ja) * 2004-09-13 2006-04-20 Jeol Ltd 試料検査方法及び試料検査装置
JP2006114385A (ja) * 2004-10-15 2006-04-27 Toshiba Corp 電子ビーム装置

Also Published As

Publication number Publication date
JP2008256572A (ja) 2008-10-23
US20080246497A1 (en) 2008-10-09
US7633303B2 (en) 2009-12-15

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