|
DE2523257C2
(de)
|
1975-05-26 |
1982-10-28 |
Siemens AG, 1000 Berlin und 8000 München |
Verfahren zur Beschichtung von Innenflächen bei rohrförmigen Hohlkörpern mit Tantal durch chemische Dampfphasenabscheidung
|
|
FR2371524A1
(fr)
|
1976-11-18 |
1978-06-16 |
Alsthom Atlantique |
Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
|
|
DE2829568C2
(de)
|
1978-07-05 |
1982-12-02 |
Fa. Hermann C. Starck Berlin, 1000 Berlin |
Verfahren zur Abscheidung von gleichmäßigen, festhaftenden Schichten hochschmelzender Metalle auf induktiv erhitzten Metallrohr-Innenflächen durch Gasphasenreduktion sowie Vorrichtung zur Durchführung des Verfahrens
|
|
US4402997A
(en)
|
1982-05-17 |
1983-09-06 |
Motorola, Inc. |
Process for improving nitride deposition on a semiconductor wafer by purging deposition tube with oxygen
|
|
US4560589A
(en)
|
1982-09-22 |
1985-12-24 |
Shin-Etsu Chemical Co., Ltd. |
Method for providing a coating layer of silicon carbide on substrate surface
|
|
US4579752A
(en)
|
1984-10-29 |
1986-04-01 |
At&T Bell Laboratories |
Enhanced corrosion resistance of metal surfaces
|
|
US4671997A
(en)
|
1985-04-08 |
1987-06-09 |
United Technologies Corporation |
Gas turbine composite parts
|
|
US4714632A
(en)
|
1985-12-11 |
1987-12-22 |
Air Products And Chemicals, Inc. |
Method of producing silicon diffusion coatings on metal articles
|
|
US4792460A
(en)
|
1986-07-15 |
1988-12-20 |
Electric Power Research Institute, Inc. |
Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
|
|
US4741964A
(en)
|
1986-07-17 |
1988-05-03 |
International Business Machines Corporation |
Structure containing hydrogenated amorphous silicon and process
|
|
US4684542A
(en)
|
1986-08-11 |
1987-08-04 |
International Business Machines Corporation |
Low pressure chemical vapor deposition of tungsten silicide
|
|
GB2195663B
(en)
|
1986-08-15 |
1990-08-22 |
Nippon Telegraph & Telephone |
Chemical vapour deposition method and apparatus therefor
|
|
US4720395A
(en)
|
1986-08-25 |
1988-01-19 |
Anicon, Inc. |
Low temperature silicon nitride CVD process
|
|
US4749631B1
(en)
|
1986-12-04 |
1993-03-23 |
|
Multilayer ceramics from silicate esters
|
|
US4753856A
(en)
|
1987-01-02 |
1988-06-28 |
Dow Corning Corporation |
Multilayer ceramic coatings from silicate esters and metal oxides
|
|
JPH01206629A
(ja)
*
|
1988-02-15 |
1989-08-18 |
Toshiba Corp |
薄膜の形成方法
|
|
US4842888A
(en)
|
1988-04-07 |
1989-06-27 |
Dow Corning Corporation |
Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
|
|
JPH089766B2
(ja)
|
1989-07-10 |
1996-01-31 |
大同ほくさん株式会社 |
鋼の窒化方法
|
|
US5160544A
(en)
|
1990-03-20 |
1992-11-03 |
Diamonex Incorporated |
Hot filament chemical vapor deposition reactor
|
|
US5128515A
(en)
|
1990-05-21 |
1992-07-07 |
Tokyo Electron Sagami Limited |
Heating apparatus
|
|
US5270082A
(en)
*
|
1991-04-15 |
1993-12-14 |
Lin Tyau Jeen |
Organic vapor deposition process for corrosion protection of metal substrates
|
|
FR2675947A1
(fr)
|
1991-04-23 |
1992-10-30 |
France Telecom |
Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive.
|
|
TW203633B
(enExample)
|
1991-06-03 |
1993-04-11 |
L Air Liquide Sa Pour L Expl Des Proce |
|
|
EP0552375B1
(en)
|
1991-07-16 |
2004-06-02 |
Seiko Epson Corporation |
Method of forming a semiconductor film with a chemical vapor deposition apparatus
|
|
US5208069A
(en)
|
1991-10-28 |
1993-05-04 |
Istituto Guido Donegani S.P.A. |
Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus prepared thereby, and method of utilizing apparatus prepared thereby
|
|
US5374412A
(en)
|
1992-07-31 |
1994-12-20 |
Cvd, Inc. |
Highly polishable, highly thermally conductive silicon carbide
|
|
CA2104340A1
(en)
|
1992-08-31 |
1994-03-01 |
Grish Chandra |
Hermetic protection for integrated circuits
|
|
US5825078A
(en)
|
1992-09-23 |
1998-10-20 |
Dow Corning Corporation |
Hermetic protection for integrated circuits
|
|
US5249554A
(en)
*
|
1993-01-08 |
1993-10-05 |
Ford Motor Company |
Powertrain component with adherent film having a graded composition
|
|
US5299731A
(en)
|
1993-02-22 |
1994-04-05 |
L'air Liquide |
Corrosion resistant welding of stainless steel
|
|
TW347149U
(en)
|
1993-02-26 |
1998-12-01 |
Dow Corning |
Integrated circuits protected from the environment by ceramic and barrier metal layers
|
|
US5465680A
(en)
*
|
1993-07-01 |
1995-11-14 |
Dow Corning Corporation |
Method of forming crystalline silicon carbide coatings
|
|
EP0653501B1
(en)
|
1993-11-11 |
1998-02-04 |
Nissin Electric Company, Limited |
Plasma-CVD method and apparatus
|
|
US5413813A
(en)
|
1993-11-23 |
1995-05-09 |
Enichem S.P.A. |
CVD of silicon-based ceramic materials on internal surface of a reactor
|
|
US5818071A
(en)
|
1995-02-02 |
1998-10-06 |
Dow Corning Corporation |
Silicon carbide metal diffusion barrier layer
|
|
US5756404A
(en)
|
1995-12-07 |
1998-05-26 |
Micron Technologies, Inc. |
Two-step nitride deposition
|
|
US5939333A
(en)
|
1996-05-30 |
1999-08-17 |
Micron Technology, Inc. |
Silicon nitride deposition method
|
|
US5997742A
(en)
|
1996-11-13 |
1999-12-07 |
Transgenomic, Inc. |
Method for performing polynucleotide separations using liquid chromatography
|
|
US5994675A
(en)
|
1997-03-07 |
1999-11-30 |
Semitool, Inc. |
Semiconductor processing furnace heating control system
|
|
US6021152A
(en)
|
1997-07-11 |
2000-02-01 |
Asm America, Inc. |
Reflective surface for CVD reactor walls
|
|
US5874368A
(en)
|
1997-10-02 |
1999-02-23 |
Air Products And Chemicals, Inc. |
Silicon nitride from bis(tertiarybutylamino)silane
|
|
US6566281B1
(en)
|
1997-10-15 |
2003-05-20 |
International Business Machines Corporation |
Nitrogen-rich barrier layer and structures formed
|
|
JP4166346B2
(ja)
|
1997-10-27 |
2008-10-15 |
日本碍子株式会社 |
耐蝕性部材、耐蝕性部材の製造方法および腐食性物質の加熱装置
|
|
US5981403A
(en)
|
1997-11-24 |
1999-11-09 |
Lucent Technologies, Inc. |
Layered silicon nitride deposition process
|
|
FI104383B
(fi)
|
1997-12-09 |
2000-01-14 |
Fortum Oil & Gas Oy |
Menetelmä laitteistojen sisäpintojen päällystämiseksi
|
|
US6511760B1
(en)
|
1998-02-27 |
2003-01-28 |
Restek Corporation |
Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating
|
|
US6159871A
(en)
|
1998-05-29 |
2000-12-12 |
Dow Corning Corporation |
Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
|
|
IL125690A0
(en)
|
1998-08-06 |
1999-04-11 |
Reiser Raphael Joshua |
Furnace for processing semiconductor wafers
|
|
US6258454B1
(en)
|
1998-09-01 |
2001-07-10 |
Agilent Technologies Inc. |
Functionalization of substrate surfaces with silane mixtures
|
|
US6444326B1
(en)
*
|
1999-03-05 |
2002-09-03 |
Restek Corporation |
Surface modification of solid supports through the thermal decomposition and functionalization of silanes
|
|
CA2303732C
(en)
|
1999-04-09 |
2010-05-25 |
Daido Tokushuko Kabushiki Kaisha |
Multi-layered anti-coking heat resisting metal tube and the method for manufacturing thereof
|
|
US6312808B1
(en)
|
1999-05-03 |
2001-11-06 |
Guardian Industries Corporation |
Hydrophobic coating with DLC & FAS on substrate
|
|
US6338901B1
(en)
|
1999-05-03 |
2002-01-15 |
Guardian Industries Corporation |
Hydrophobic coating including DLC on substrate
|
|
US6277480B1
(en)
|
1999-05-03 |
2001-08-21 |
Guardian Industries Corporation |
Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
|
|
US6406793B1
(en)
*
|
1999-09-22 |
2002-06-18 |
Shin-Etsu Chemical Co., Ltd. |
Addition-reaction silicone pressure sensitive adhesive composition
|
|
US6472076B1
(en)
|
1999-10-18 |
2002-10-29 |
Honeywell International Inc. |
Deposition of organosilsesquioxane films
|
|
JP2001207123A
(ja)
|
1999-11-16 |
2001-07-31 |
Sentan Kagaku Gijutsu Incubation Center:Kk |
高硬度高滑水性膜およびその製造方法
|
|
KR100338361B1
(ko)
|
2000-01-28 |
2002-05-30 |
유승렬 |
탄화수소 열분해 반응기 튜브 내벽에 코크의 저감을 위한온라인 코팅 방법
|
|
EP1123991A3
(en)
|
2000-02-08 |
2002-11-13 |
Asm Japan K.K. |
Low dielectric constant materials and processes
|
|
FR2805583B1
(fr)
*
|
2000-02-28 |
2002-05-17 |
Renault |
Piece de friction metallique comportant une couche a proprietes de frottement et d'usure ameliorees
|
|
US6458718B1
(en)
|
2000-04-28 |
2002-10-01 |
Asm Japan K.K. |
Fluorine-containing materials and processes
|
|
US6630413B2
(en)
|
2000-04-28 |
2003-10-07 |
Asm Japan K.K. |
CVD syntheses of silicon nitride materials
|
|
KR20010106905A
(ko)
|
2000-05-24 |
2001-12-07 |
황 철 주 |
저유전율 SiOC 박막의 형성방법
|
|
JP4484185B2
(ja)
|
2000-08-29 |
2010-06-16 |
コバレントマテリアル株式会社 |
シリコン半導体基板の化学的気相薄膜成長方法
|
|
US6531398B1
(en)
|
2000-10-30 |
2003-03-11 |
Applied Materials, Inc. |
Method of depositing organosillicate layers
|
|
US6765178B2
(en)
|
2000-12-29 |
2004-07-20 |
Applied Materials, Inc. |
Chamber for uniform substrate heating
|
|
US6998579B2
(en)
|
2000-12-29 |
2006-02-14 |
Applied Materials, Inc. |
Chamber for uniform substrate heating
|
|
WO2002080244A2
(en)
|
2001-02-12 |
2002-10-10 |
Asm America, Inc. |
Improved process for deposition of semiconductor films
|
|
US6531415B1
(en)
|
2002-01-30 |
2003-03-11 |
Taiwan Semiconductor Manufacturing Company |
Silicon nitride furnace tube low temperature cycle purge for attenuated particle formation
|
|
US6936309B2
(en)
|
2002-04-02 |
2005-08-30 |
Applied Materials, Inc. |
Hardness improvement of silicon carboxy films
|
|
EP1504138A2
(en)
|
2002-05-08 |
2005-02-09 |
Applied Materials, Inc. |
Method for using low dielectric constant film by electron beam
|
|
US20070243317A1
(en)
|
2002-07-15 |
2007-10-18 |
Du Bois Dale R |
Thermal Processing System and Configurable Vertical Chamber
|
|
US6808745B2
(en)
|
2002-08-22 |
2004-10-26 |
Eastman Kodak Company |
Method of coating micro-electromechanical devices
|
|
JP4358492B2
(ja)
|
2002-09-25 |
2009-11-04 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
|
|
JP4148759B2
(ja)
|
2002-11-13 |
2008-09-10 |
三井化学株式会社 |
ガスバリアフィルムの製造方法
|
|
GB2395492A
(en)
|
2002-11-25 |
2004-05-26 |
Thermo Electron Corp |
Improvements in deposition methods for the production of semiconductors
|
|
US7070833B2
(en)
|
2003-03-05 |
2006-07-04 |
Restek Corporation |
Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
|
|
JP4300876B2
(ja)
*
|
2003-05-28 |
2009-07-22 |
株式会社Ihi |
摺動部材及びその製造方法
|
|
US20050271893A1
(en)
*
|
2004-06-04 |
2005-12-08 |
Applied Microstructures, Inc. |
Controlled vapor deposition of multilayered coatings adhered by an oxide layer
|
|
WO2005053828A2
(en)
|
2003-11-07 |
2005-06-16 |
Ahwahnee Technology, Inc. |
Systems and methods for manufacture of carbon nanotubes
|
|
CA2546898C
(en)
|
2003-11-20 |
2016-11-22 |
Sigma-Aldrich Co. |
Polysilazane thermosetting polymers for use in chromatographic systems and applications
|
|
WO2006008941A1
(ja)
|
2004-07-22 |
2006-01-26 |
Toyo Tanso Co., Ltd. |
サセプタ
|
|
JP4470023B2
(ja)
|
2004-08-20 |
2010-06-02 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
シリコン窒化物膜の製造方法
|
|
US7867627B2
(en)
|
2004-12-13 |
2011-01-11 |
Silcotek Corporation |
Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures
|
|
US7678712B2
(en)
|
2005-03-22 |
2010-03-16 |
Honeywell International, Inc. |
Vapor phase treatment of dielectric materials
|
|
US7875556B2
(en)
|
2005-05-16 |
2011-01-25 |
Air Products And Chemicals, Inc. |
Precursors for CVD silicon carbo-nitride and silicon nitride films
|
|
US20070042118A1
(en)
|
2005-08-22 |
2007-02-22 |
Yoo Woo S |
Encapsulated thermal processing
|
|
KR100672829B1
(ko)
|
2005-08-31 |
2007-01-22 |
삼성전자주식회사 |
전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법
|
|
GB2452190B
(en)
*
|
2006-05-17 |
2011-12-28 |
G & H Technologies Llc |
Wear resistant depositied coating, method of coating deposition and applications therefor
|
|
US7902080B2
(en)
|
2006-05-30 |
2011-03-08 |
Applied Materials, Inc. |
Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
|
|
US7429717B2
(en)
|
2006-07-12 |
2008-09-30 |
Applied Materials, Inc. |
Multizone heater for furnace
|
|
ITMI20062030A1
(it)
|
2006-10-23 |
2008-04-24 |
Calzoni Srl |
Apparecchiatura di guida per la movimentazione di supporti porta sensori e simili di sommergibili
|
|
US7860379B2
(en)
|
2007-01-15 |
2010-12-28 |
Applied Materials, Inc. |
Temperature measurement and control of wafer support in thermal processing chamber
|
|
SE0701028L
(sv)
*
|
2007-04-27 |
2008-10-28 |
Sandvik Intellectual Property |
Skär
|
|
WO2009032488A1
(en)
*
|
2007-08-28 |
2009-03-12 |
International Business Machines Corporation |
Improved low k porous sicoh dielectric and integration with post film formation treatment
|
|
US20090078202A1
(en)
|
2007-09-26 |
2009-03-26 |
Neocera, Llc |
Substrate heater for material deposition
|
|
US7964442B2
(en)
*
|
2007-10-09 |
2011-06-21 |
Applied Materials, Inc. |
Methods to obtain low k dielectric barrier with superior etch resistivity
|
|
US8278205B2
(en)
|
2008-03-12 |
2012-10-02 |
Tokyo Electron Limited |
Semiconductor device and method for manufacturing the same
|
|
CN102171384B
(zh)
*
|
2008-05-28 |
2013-12-25 |
乔治洛德方法研究和开发液化空气有限公司 |
碳化硅基抗反射涂层
|
|
CA2739920C
(en)
|
2008-10-07 |
2017-12-12 |
Ross Technology Corporation |
Spill-resistant surfaces having hydrophobic and oleophobic borders
|
|
FR2940966B1
(fr)
|
2009-01-09 |
2011-03-04 |
Saint Gobain |
Substrat hydrophobe comprenant un primage du type oxycarbure de silicium active par plasma
|
|
US8536491B2
(en)
|
2009-03-24 |
2013-09-17 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Rotatable and tunable heaters for semiconductor furnace
|
|
JP5716663B2
(ja)
|
2009-04-30 |
2015-05-13 |
コニカミノルタ株式会社 |
防汚性積層体
|
|
GB2471271A
(en)
|
2009-06-19 |
2010-12-29 |
Univ Dublin City |
Method of coating the channels of a microfluidic device
|
|
US8980382B2
(en)
|
2009-12-02 |
2015-03-17 |
Applied Materials, Inc. |
Oxygen-doping for non-carbon radical-component CVD films
|
|
US9340880B2
(en)
|
2009-10-27 |
2016-05-17 |
Silcotek Corp. |
Semiconductor fabrication process
|
|
JP5735522B2
(ja)
|
2009-10-27 |
2015-06-17 |
シルコテック コーポレイション |
化学気相成長コーティング、物品、及び方法
|
|
WO2012047945A2
(en)
|
2010-10-05 |
2012-04-12 |
Silcotek Corp. |
Wear resistant coating, article, and method
|
|
CN102844848A
(zh)
|
2010-03-05 |
2012-12-26 |
应用材料公司 |
通过自由基成分化学气相沉积的共形层
|
|
US20110259879A1
(en)
|
2010-04-22 |
2011-10-27 |
Applied Materials, Inc. |
Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
|
|
JP5337269B2
(ja)
|
2010-04-27 |
2013-11-06 |
東京エレクトロン株式会社 |
アモルファスシリコン膜の成膜方法および成膜装置
|
|
JP4967066B2
(ja)
|
2010-04-27 |
2012-07-04 |
東京エレクトロン株式会社 |
アモルファスシリコン膜の成膜方法および成膜装置
|
|
TWI432191B
(zh)
|
2010-06-11 |
2014-04-01 |
Taiwan Sunpan Biotechnology Dev Co Ltd |
分離自藤黃樹脂的化合物以及包含有此等化合物的藥學組成物
|
|
US8552346B2
(en)
|
2011-05-20 |
2013-10-08 |
Applied Materials, Inc. |
Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber
|
|
JP6256953B2
(ja)
|
2012-03-26 |
2018-01-10 |
シルコテック コーポレーション |
コーティングされた物品及び化学蒸着方法
|
|
JP2013227628A
(ja)
|
2012-04-26 |
2013-11-07 |
Kojima Press Industry Co Ltd |
樹脂製品の製造方法並びに樹脂製品
|
|
USD689107S1
(en)
|
2012-11-19 |
2013-09-03 |
Silcotek Corp. |
Weldment fixture
|
|
USD713024S1
(en)
|
2012-11-19 |
2014-09-09 |
Silcotek Corp. |
Chemical vapor deposition fixture
|
|
WO2014123084A1
(ja)
|
2013-02-07 |
2014-08-14 |
ピーエスフォー ルクスコ エスエイアールエル |
半導体装置およびその製造方法
|
|
JP6125279B2
(ja)
|
2013-03-05 |
2017-05-10 |
株式会社日立国際電気 |
半導体装置の製造方法、基板処理装置およびプログラム
|
|
US9975143B2
(en)
|
2013-05-14 |
2018-05-22 |
Silcotek Corp. |
Chemical vapor deposition functionalization
|
|
US20150024152A1
(en)
|
2013-07-19 |
2015-01-22 |
Agilent Technologies, Inc. |
Metal components with inert vapor phase coating on internal surfaces
|
|
US20150030885A1
(en)
|
2013-07-29 |
2015-01-29 |
Silcotek Corp. |
Coated article and chemical vapor deposition process
|
|
US11292924B2
(en)
|
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|
|
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(ko)
|
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|
|
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|
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|
|
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|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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(en)
|
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|