JP2013526049A - シリコンウェハ上にn+pp+型又はp+nn+型の構造を作製する方法 - Google Patents
シリコンウェハ上にn+pp+型又はp+nn+型の構造を作製する方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 55
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052796 boron Inorganic materials 0.000 claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims abstract description 32
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011574 phosphorus Substances 0.000 claims abstract description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 3
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 67
- 239000005388 borosilicate glass Substances 0.000 description 15
- 239000005360 phosphosilicate glass Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- -1 silicon hydride nitride Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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Abstract
【選択図】 図1
Description
−低い裏面再結合速度(BSRV)。なお、シリコンと導電性コンタクトとの界面は、高い再結合を伴う領域である。
−高い裏面反射率(BSR)。
−B-BSFは、シリコン中におけるそのより大きな極限溶解度のおかげで、さらに高度に集中したp+領域を作り出し、それ故、より低い再結合率を可能とする(より強力な裏面反発電界)。
−B-BSFは、誘電性パッシベーションと組み合わされてつくられ、これにより、裏面再結合を低減し、裏面反射率を増加させることができる。
−工程2:工程1でこのように形成したホウ素ドープシリコン酸化物層を、前面及び裏面において除去する。以下、この層をBSG(ホウケイ酸ガラス)層と呼ぶ。
−工程3:裏面を、小さな厚さの熱酸化物を堆積させ、その上にシリコン窒化物(SiNx)を載せること(PECVD(プラズマ化学気相堆積)により堆積させること)によって保護する。また、この工程は、裏面のパッシベーションを可能とする。
−工程6:以下、PSG層(リンケイ酸ガラス)と呼ぶ、工程5で形成したリンドープシリコン酸化物層を除去する。この工程6は、この刊行物には明示的に記載されていないが、太陽電池の獲得を続けるためには、疑いなく実行しなければならない。
−工程2:BRLの除去を促進するために、現場酸化を行って、BRLをホウ素ドープシリコン酸化物層(BSG)に転化させる。このようにして形成したホウ素ドープシリコン酸化物層(BSG)及びBRLは、フッ化水素酸溶液中に浸漬させることによって除去する。
−工程4:工程3で形成したリンドープシリコン酸化物層(PSG)を除去する。
−工程2:ホウ素を拡散させる。
−工程3:工程1で形成したホウ素ドープシリコン酸化物層を除去する。
−工程5:リンを拡散させる。
−工程6:工程5で形成したリンドープシリコン酸化物層を除去する。
−工程a)の結果として得られた前記ウェハの前記前面上に、
・リンドープシリコン酸化物層(PSG)と、
・n+ドープ領域とを、
−そして、工程a)の結果として得られた前記ウェハの前記裏面上に、
・ホウ素リッチ層(BRL)と、
・p+ドープ領域と
を形成するように拡散させる。
−p型又はn型のシリコンウェハ、
−BSG層
−SiOx拡散に対するバリア層
を具備したシリコンウェハが得られる。
従って、本発明の工程b)では、シリコンウェハのn+及びp+領域が形成される。
b1)まず、ホウ素を、工程a)の結果として形成された前記BSG層から前記シリコンウェハ中へと拡散させる工程と、次いで、
b2)リン源を、ホウ素とリンとが共拡散するように拡散させる工程と
を含んでいる。
−PSG層と、
−n+型領域と、
−p又はn型シリコンウェハと、
−p+領域と、
−BRLと、
−BSG層と、
−SiOx拡散に対するバリア層と
を具備したシリコンウェハが得られる。
c1)第1湿式化学エッチングを、例えば、濃度が1乃至10%の(即ち、脱イオン水中において1乃至10%にまで希釈した)フッ化水素酸溶液中で行って、前記BSG及びPSG層を除去する工程と、
c2)前記BRLを、例えば、気体酸素を、500乃至2000sccmの流量、700乃至1000℃の温度で通過させることによって酸化させて、前記BRL中に存在していたホウ素と前記炉の雰囲気中に存在していた酸素とから形成されたBSGの薄層を得る工程と、
c3)第2湿式化学エッチングを、例えば、2%のフッ化水素酸溶液中で行って、工程c2)の終了時に形成された前記BSG酸化物層を除去する工程と
を含んでいてもよい。
−n+型領域と、
−p又はn型のシリコンウェハと、
−p+型領域と
を具備したシリコンウェハが得られる。
−p型シリコンウェハ1と、
−BSG層2と、
−SiOx拡散に対するバリア層3と
を具備したシリコンウェハが得られる。
−PSG層4と、
−n+領域5と、
−p型シリコンウェハ1と、
−p+型領域7と、
−BRL6と、
−BSG層2と、
−SiOx拡散に対するバリア層3と
を具備したシリコンウェハが得られる。
−n+型領域5と、
−p型シリコンウェハ1と、
−前記シリコンウェハのB-BSFを形成しているp+型領域7と
を具備したシリコンウェハが得られる。
Claims (10)
- n+pp+型又はp+nn+型構造をシリコンウェハ上に作製する方法であって、以下の連続工程、
a)前面(8)と裏面(9)とを備えたp型又はn型のシリコンウェハ(1)上に、PECVDを実行して、前記裏面(9)上にホウ素ドープシリコン酸化物(BSG)(2)を、次いで、SiOx(3)拡散に対するバリア層を形成する工程と、
b)リン源を、リンとホウ素とが、共拡散し、
−工程a)の結果として得られた前記ウェハの前記前面(8)上に、
・リンドープシリコン酸化物層(PSG)(4)と、
・n+ドープ領域(5)とを、
−そして、工程a)の結果として得られた前記ウェハの前記裏面(9)上に、
・ホウ素リッチ層(BRL)(6)と、
・p+ドープ領域(7)とを
形成するように拡散させる工程と、
c)前記BSG(2)、PSG(4)及びSiOx(3)の層を除去し、前記BRL(6)を酸化させ、この酸化の結果として得られた層を除去する工程と
を含んだことを特徴とする作製方法。 - 請求項1に記載の作製方法であって、前記BSG層(2)の形成の間に、ホウ素源として使用する前駆体はトリメチルボレートであることを特徴とする作製方法。
- 請求項1又は2に記載の作製方法であって、前記BSG層(2)の形成は、300乃至400℃の温度及び500乃至1500Wのパワーで行うことを特徴とする作製方法。
- 請求項1乃至3の何れか1項に記載の作製方法であって、PECVDによるSiOx(3)の堆積は、300乃至400℃の温度及び500乃至1500Wのパワーで行うことを特徴とする作製方法。
- 請求項1乃至4の何れか1項に記載の作製方法であって、工程b)は、低圧下又は大気圧下で熱拡散炉において行うことを特徴とする作製方法。
- 請求項1乃至5の何れか1項に記載の作製方法であって、工程b)は、以下の連続工程、
b1)まず、工程a)の終了時に形成された前記BSG層(2)から前記シリコンウェハ(1)中にホウ素を拡散させる工程と、
b2)リン源を、ホウ素とリンとが共拡散するように拡散させる工程と
を含んだことを特徴とする作製方法。 - 請求項1乃至6の何れか1項に記載の作製方法であって、工程c)は、以下の連続工程、
c1)第1化学エッチングを行って、前記BSG(2)及びPSG(4)の層を除去する工程と、
c2)前記BRL(6)を酸化させる工程と、
c3)第2化学エッチングを行って、工程c2)の終了時に形成された酸化物層を除去する工程と
を含んだことを特徴とする作製方法。 - 請求項1乃至7の何れか1項に記載の作製方法で得られるn+pp+型又はp+nn+ 型構造を有しているシリコンウェハ。
- 光起電力セルの製造方法であって、以下の工程、
a)請求項1乃至7の何れか1項に記載の作製方法に従ってn+pp+型又はp+nn+ 型構造を有しているシリコンウェハを作製する工程と、
b)反射防止層を、工程a)の終了時に得られた前記シリコンウェハの前記前面に堆積させる工程と、
c)任意に、パッシベーション層を前記裏面上に堆積させる工程と、
d)電気接点を、工程b)の結果として又は任意に工程c)の結果として得られた前記シリコンウェハの前記前面及び前記裏面上に、グリッドの形態で配置する工程と
を含んだことを特徴とする製造方法。 - 請求項9に記載の製造方法を用いて得られる光起電力セル。
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FR10/53154 | 2010-04-26 | ||
PCT/FR2011/050948 WO2011135249A1 (fr) | 2010-04-26 | 2011-04-26 | Procédé de préparation d'une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium |
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CN (1) | CN102971867B (ja) |
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US20130112260A1 (en) | 2013-05-09 |
FR2959351B1 (fr) | 2013-11-08 |
FR2959351A1 (fr) | 2011-10-28 |
WO2011135249A1 (fr) | 2011-11-03 |
JP5940519B2 (ja) | 2016-06-29 |
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