JP2013524537A5 - - Google Patents
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- JP2013524537A5 JP2013524537A5 JP2013503882A JP2013503882A JP2013524537A5 JP 2013524537 A5 JP2013524537 A5 JP 2013524537A5 JP 2013503882 A JP2013503882 A JP 2013503882A JP 2013503882 A JP2013503882 A JP 2013503882A JP 2013524537 A5 JP2013524537 A5 JP 2013524537A5
- Authority
- JP
- Japan
- Prior art keywords
- poly
- film
- substrate
- ink
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000007791 liquid phase Substances 0.000 claims 10
- 239000002019 doping agent Substances 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 7
- 229910000077 silane Inorganic materials 0.000 claims 7
- 229910000078 germane Inorganic materials 0.000 claims 6
- 239000000463 material Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 238000007639 printing Methods 0.000 claims 4
- 239000002178 crystalline material Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 239000002023 wood Substances 0.000 claims 2
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000007607 die coating method Methods 0.000 claims 1
- 238000007765 extrusion coating Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000007646 gravure printing Methods 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000001795 light effect Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000010248 power generation Methods 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32145810P | 2010-04-06 | 2010-04-06 | |
| US61/321,458 | 2010-04-06 | ||
| PCT/US2011/031392 WO2011127147A1 (en) | 2010-04-06 | 2011-04-06 | Epitaxial structures, methods of forming the same, and devices including the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016257028A Division JP2017085146A (ja) | 2010-04-06 | 2016-12-28 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013524537A JP2013524537A (ja) | 2013-06-17 |
| JP2013524537A5 true JP2013524537A5 (https=) | 2017-11-24 |
| JP6296793B2 JP6296793B2 (ja) | 2018-03-20 |
Family
ID=44708589
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013503882A Active JP6296793B2 (ja) | 2010-04-06 | 2011-04-06 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
| JP2016257028A Pending JP2017085146A (ja) | 2010-04-06 | 2016-12-28 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016257028A Pending JP2017085146A (ja) | 2010-04-06 | 2016-12-28 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8900915B2 (https=) |
| EP (1) | EP2556539A4 (https=) |
| JP (2) | JP6296793B2 (https=) |
| KR (1) | KR20130038829A (https=) |
| CN (1) | CN102822985B (https=) |
| TW (1) | TWI559372B (https=) |
| WO (1) | WO2011127147A1 (https=) |
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| TWI559372B (zh) * | 2010-04-06 | 2016-11-21 | 薄膜電子Ａｓａ公司 | 磊晶結構、其形成方法及含此結構之元件 |
| US8828765B2 (en) * | 2010-06-09 | 2014-09-09 | Alliance For Sustainable Energy, Llc | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces |
| DE102010024309A1 (de) * | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer photovoltaischen Solarzelle |
| KR20120064364A (ko) * | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | 태양 전지의 제조 방법 |
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| KR101959378B1 (ko) * | 2016-08-26 | 2019-03-19 | 한국과학기술연구원 | 3족-5족 화합물 반도체 소자 제조 방법 및 그 반도체 소자 |
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-
2011
- 2011-04-06 TW TW100111755A patent/TWI559372B/zh not_active IP Right Cessation
- 2011-04-06 EP EP11766641.2A patent/EP2556539A4/en not_active Ceased
- 2011-04-06 KR KR1020127026096A patent/KR20130038829A/ko not_active Ceased
- 2011-04-06 US US13/081,257 patent/US8900915B2/en active Active
- 2011-04-06 JP JP2013503882A patent/JP6296793B2/ja active Active
- 2011-04-06 CN CN201180015387.2A patent/CN102822985B/zh active Active
- 2011-04-06 WO PCT/US2011/031392 patent/WO2011127147A1/en not_active Ceased
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2016
- 2016-12-28 JP JP2016257028A patent/JP2017085146A/ja active Pending
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