JP2013524537A5 - - Google Patents
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- Publication number
- JP2013524537A5 JP2013524537A5 JP2013503882A JP2013503882A JP2013524537A5 JP 2013524537 A5 JP2013524537 A5 JP 2013524537A5 JP 2013503882 A JP2013503882 A JP 2013503882A JP 2013503882 A JP2013503882 A JP 2013503882A JP 2013524537 A5 JP2013524537 A5 JP 2013524537A5
- Authority
- JP
- Japan
- Prior art keywords
- poly
- film
- substrate
- ink
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000007791 liquid phase Substances 0.000 claims 10
- 239000002019 doping agent Substances 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 7
- 229910000077 silane Inorganic materials 0.000 claims 7
- 229910000078 germane Inorganic materials 0.000 claims 6
- 239000000463 material Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 238000007639 printing Methods 0.000 claims 4
- 239000002178 crystalline material Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 239000002023 wood Substances 0.000 claims 2
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000007607 die coating method Methods 0.000 claims 1
- 238000007765 extrusion coating Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000007646 gravure printing Methods 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000001795 light effect Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000010248 power generation Methods 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32145810P | 2010-04-06 | 2010-04-06 | |
| US61/321,458 | 2010-04-06 | ||
| PCT/US2011/031392 WO2011127147A1 (en) | 2010-04-06 | 2011-04-06 | Epitaxial structures, methods of forming the same, and devices including the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016257028A Division JP2017085146A (ja) | 2010-04-06 | 2016-12-28 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013524537A JP2013524537A (ja) | 2013-06-17 |
| JP2013524537A5 true JP2013524537A5 (https=) | 2017-11-24 |
| JP6296793B2 JP6296793B2 (ja) | 2018-03-20 |
Family
ID=44708589
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013503882A Active JP6296793B2 (ja) | 2010-04-06 | 2011-04-06 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
| JP2016257028A Pending JP2017085146A (ja) | 2010-04-06 | 2016-12-28 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016257028A Pending JP2017085146A (ja) | 2010-04-06 | 2016-12-28 | エピタキシャル構造、その形成方法、および、それを含むデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8900915B2 (https=) |
| EP (1) | EP2556539A4 (https=) |
| JP (2) | JP6296793B2 (https=) |
| KR (1) | KR20130038829A (https=) |
| CN (1) | CN102822985B (https=) |
| TW (1) | TWI559372B (https=) |
| WO (1) | WO2011127147A1 (https=) |
Families Citing this family (60)
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| US8815104B2 (en) | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
| GB0809721D0 (en) * | 2008-05-28 | 2008-07-02 | Univ Bath | Improvements in or relating to joints and/or implants |
| US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| TWI559372B (zh) * | 2010-04-06 | 2016-11-21 | 薄膜電子Ａｓａ公司 | 磊晶結構、其形成方法及含此結構之元件 |
| US8828765B2 (en) | 2010-06-09 | 2014-09-09 | Alliance For Sustainable Energy, Llc | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces |
| DE102010024309A1 (de) * | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer photovoltaischen Solarzelle |
| KR20120064364A (ko) * | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | 태양 전지의 제조 방법 |
| JP5677469B2 (ja) * | 2011-01-27 | 2015-02-25 | 京セラ株式会社 | 太陽電池素子の製造方法、太陽電池素子、および太陽電池モジュール |
| US10011920B2 (en) | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
| CA2815764A1 (en) | 2011-03-08 | 2012-09-13 | Alliance For Sustainable Energy, Llc | Efficient black silicon photovoltaic devices with enhanced blue response |
| US20120312361A1 (en) * | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Emitter structure and fabrication method for silicon heterojunction solar cell |
| US8871620B2 (en) | 2011-07-28 | 2014-10-28 | International Business Machines Corporation | III-V photovoltaic elements |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
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| CN103367525B (zh) * | 2012-03-30 | 2016-12-14 | 清华大学 | 太阳能电池的制备方法 |
| CN103367477A (zh) * | 2012-03-30 | 2013-10-23 | 清华大学 | 太阳能电池 |
| WO2014066588A1 (en) * | 2012-10-25 | 2014-05-01 | Tetrasun, Inc. | Methods of forming solar cells |
| US9059212B2 (en) | 2012-10-31 | 2015-06-16 | International Business Machines Corporation | Back-end transistors with highly doped low-temperature contacts |
| US8912071B2 (en) * | 2012-12-06 | 2014-12-16 | International Business Machines Corporation | Selective emitter photovoltaic device |
| US8642378B1 (en) | 2012-12-18 | 2014-02-04 | International Business Machines Corporation | Field-effect inter-digitated back contact photovoltaic device |
| JP6385362B2 (ja) | 2012-12-20 | 2018-09-05 | スリーエム イノベイティブ プロパティズ カンパニー | 以降の加工時に高精度位置合わせを得るためのマルチインクの印刷 |
| NL2010713C2 (en) * | 2013-04-26 | 2014-10-29 | Univ Delft Tech | Method of forming silicon on a substrate. |
| DE102013219603A1 (de) * | 2013-09-27 | 2015-04-02 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur Herstellung einer Solarzelle |
| DE102014208054A1 (de) * | 2014-04-29 | 2015-10-29 | Evonik Degussa Gmbh | Verfahren zur Erzeugung unterschiedlich dotierter Halbleiter |
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| WO2016001454A1 (es) * | 2014-06-30 | 2016-01-07 | Oxolutia, S. L. | Método de fabricación de láminas delgadas de óxidos epitaxiales mediante impresión de chorro de tinta |
| DE102014223465A1 (de) * | 2014-11-18 | 2016-05-19 | Evonik Degussa Gmbh | Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten |
| US9997397B2 (en) * | 2015-02-13 | 2018-06-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and manufacturing method thereof |
| US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
| JP6564874B2 (ja) * | 2015-11-04 | 2019-08-21 | 株式会社カネカ | 結晶シリコン系太陽電池の製造方法および結晶シリコン系太陽電池モジュールの製造方法 |
| US9453190B1 (en) | 2015-11-12 | 2016-09-27 | International Business Machines Corporation | Surface treatment of textured silicon |
| KR101959378B1 (ko) * | 2016-08-26 | 2019-03-19 | 한국과학기술연구원 | 3족-5족 화합물 반도체 소자 제조 방법 및 그 반도체 소자 |
| CN109844960B (zh) | 2016-10-05 | 2022-11-29 | 信越化学工业株式会社 | 高光电变换效率太阳能电池的制造方法及高光电变换效率太阳能电池 |
| CN109983586B (zh) | 2016-11-03 | 2024-03-12 | 道达尔销售服务公司 | 太阳能电池的表面处理 |
| US10453832B2 (en) | 2016-12-15 | 2019-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring structures and methods of forming same |
| DE102017118899B4 (de) | 2016-12-15 | 2020-06-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Dichtungsringstrukturen und Verfahren zu ihrer Herstellung |
| US10043970B2 (en) | 2016-12-15 | 2018-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Determining a characteristic of a monitored layer on an integrated chip |
| US10163974B2 (en) | 2017-05-17 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming absorption enhancement structure for image sensor |
| US10438980B2 (en) * | 2017-05-31 | 2019-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with a high absorption layer |
| CN109643657B (zh) * | 2017-06-22 | 2022-08-16 | 深圳市柔宇科技股份有限公司 | 阵列基板的制作设备及阵列基板的制作方法 |
| US10559563B2 (en) | 2017-06-26 | 2020-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing monolithic three-dimensional (3D) integrated circuits |
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| KR102691174B1 (ko) * | 2019-01-28 | 2024-08-05 | 도쿄엘렉트론가부시키가이샤 | 루테늄의 선택적 제거를 위한 광 보조 화학 기상 에칭 |
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| TWI725583B (zh) * | 2019-10-22 | 2021-04-21 | 國立勤益科技大學 | 可撓式可見光檢測器 |
| US11189565B2 (en) | 2020-02-19 | 2021-11-30 | Nanya Technology Corporation | Semiconductor device with programmable anti-fuse feature and method for fabricating the same |
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| TWI768801B (zh) * | 2021-03-31 | 2022-06-21 | 世界先進積體電路股份有限公司 | 半導體結構及其製作方法 |
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| TWI559372B (zh) * | 2010-04-06 | 2016-11-21 | 薄膜電子Ａｓａ公司 | 磊晶結構、其形成方法及含此結構之元件 |
-
2011
- 2011-04-06 TW TW100111755A patent/TWI559372B/zh not_active IP Right Cessation
- 2011-04-06 CN CN201180015387.2A patent/CN102822985B/zh active Active
- 2011-04-06 JP JP2013503882A patent/JP6296793B2/ja active Active
- 2011-04-06 US US13/081,257 patent/US8900915B2/en active Active
- 2011-04-06 WO PCT/US2011/031392 patent/WO2011127147A1/en not_active Ceased
- 2011-04-06 EP EP11766641.2A patent/EP2556539A4/en not_active Ceased
- 2011-04-06 KR KR1020127026096A patent/KR20130038829A/ko not_active Ceased
-
2016
- 2016-12-28 JP JP2016257028A patent/JP2017085146A/ja active Pending
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