JP6222218B2 - 薄膜の転写方法、薄膜トランジスタの製造方法、液晶表示装置の画素電極形成方法 - Google Patents
薄膜の転写方法、薄膜トランジスタの製造方法、液晶表示装置の画素電極形成方法 Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Description
本願は、2013年2月15日に出願された特願2013−27594号に基づき優先権を主張し、その内容をここに援用する。
一方、酸化物半導体膜は、半導体的な特性から、薄膜トランジスタの半導体層としても用いられている。これら酸化物半導体膜は、一般的にスパッタリング法等の真空成膜法により成膜される。真空成膜法では、大規模な真空装置を必要とするため、製造コストが高くなる。
そこで、より簡便な酸化物半導体膜の成膜方法としては、ゾルゲル法、無電解析出法、電解析出法等の湿式による成膜方法が知られている。しかしながら、これらの成膜方法は、基板を加熱すること等によって、高温で成長(成膜)を行うことにより、結晶性の高い酸化物半導体膜が得られるものの、ポリエチレンテレフタレート(PET)等に代表される樹脂基板が耐えられるような低温(100〜200℃程度)では、結晶性の高い酸化物半導体膜を得ることが困難である。
なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の寸法や比率等は適宜異ならせている。
また、本実施形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。
図1は、本実施形態に係る薄膜の転写方法の第一の例を示す工程図である。
第一基板12上に、薄膜11を形成するには、スパッタリング法、蒸着法、CVD法等の真空成膜法が用いられる。
なお、「ぬれ性」とは、液体を基板に滴下させた場合の、液滴と基板表面とのなす角(接触角)で判断される特性をいい、接触角が大きい場合にぬれ性が低い(ぬれにくい)と表し、接触角が小さい場合にぬれ性が高い(ぬれやすい)と表している。
なお、液体によって膨潤した第一基板12は、乾燥すれば再び薄膜11の形成、剥離に用いることができる。
第二基板21としては、後述する液体に対して、上述の第一基板12よりもぬれ性が高いものであれば特に限定されるものではない。このような第二基板21としては、例えば、ポリエチレンテレフタレート(PET)等の樹脂基板や、SiO2等のガラス基板等が挙げられる。
薄膜11に液体31を塗布する方法としては、薄膜11が形成された第一基板12の全体を液体31に浸漬するディップコーティング法、薄膜11上に液体31を滴下する滴下法、薄膜11上に液体31を散布するスプレーコーティング法等が用いられる。
また、第一基板12から剥離した薄膜11を第二基板21に付着させる際には、薄膜11を液体31に十分にぬれた状態にしたまま第二基板21と接触させることができる。
液体31の量が不十分であると、第一基板12から剥離した薄膜11が第二基板21に付着しにくくなる傾向にある。
図2は、本実施形態に係る薄膜の転写方法の第二の例を示す工程図である。図2において、図1に示した薄膜の転写方法の第一の例と同一の構成要素には同一符号を付して、その説明を省略する。
第二基板21の一面21aに液体31を塗布する方法としては、第二基板21を液体31に浸漬するディップコーティング法、第二基板21の一面21aに液体31を滴下する滴下法、第二基板21の一面21aに液体31を散布するスプレーコーティング法等が用いられる。
本実施形態の薄膜トランジスタの製造方法は、酸化物半導体層を、上述の薄膜の転写方法により形成する工程を含む方法である。
(1)まず、図3(a)に示すように、公知技術により、樹脂やガラス等からなる基板(以下、「第二基板」と言う。)41上に、ゲート電極42とゲート絶縁膜43を形成する。
このとき、予め所望の厚さの酸化物半導体膜44が形成された基板(以下、「第一基板」と言う。)を用意する。なお、酸化物半導体膜44の厚さは、特に限定されるものではないが、例えば、100nm〜1μmの範囲とすることができる。例えば、酸化物半導体膜44の厚さは、約100、200、300、400、500、600、700、800、900、又は1000nmにできる。
図4は、本実施形態に係る薄膜トランジスタの製造方法の他の例を示す工程図である。
(11)まず、図4(a)に示すように、上述の本実施形態の薄膜の転写方法により、樹脂やガラス等からなる基板51上に、酸化物半導体膜52を形成する。
本実施形態の液晶表示装置の画素電極形成方法は、上述の薄膜の転写方法により、薄膜トランジスタが形成された基板上に画素電極を転写する工程を含む方法である。
(21)まず、図5(a)に示すように、公知技術により、樹脂やガラス等から構成される基板(以下、「第二基板」と言う。)61上に、ゲート電極とゲート絶縁膜、半導体膜により構成され、所望のパターンにパターニングされた薄膜トランジスタ62を形成する。
このとき、予め所望の厚さの酸化物半導体膜63が形成された基板(以下、「第一基板」と言う。)を用意する。なお、酸化物半導体膜63の厚さは、特に限定されるものではないが、例えば、100nm〜1μmの範囲とすることができる。例えば、酸化物半導体膜63の厚さは、約100、200、300、400、500、600、700、800、900、又は1000nmにできる。
まず、アクリル基板(第一基板)を用意し、このアクリル基板上に、直接、スパッタリング法により、酸化亜鉛に3atom%のアルミニウムがドープされたアルミニウムドープ酸化亜鉛(AZO)膜を成膜した。アクリル基板上に形成されたアルミニウムドープ酸化亜鉛膜の膜厚は180nm、シート抵抗は200Ω/□であった。
次に、アクリル基板上に形成されたアルミニウムドープ酸化亜鉛膜を転写するためのPET基板(第二基板)を準備した。
次に、PET基板をエタノールに浸漬し、アクリル基板における酸化物半導体膜が形成されている側の面と接触させる面に、エタノールを塗布した。
次に、エタノールが塗布されたPET基板の一面と、アクリル基板におけるアルミニウムドープ酸化亜鉛膜が形成されている側の面とを接触させた。そして、PET基板を100℃で3分加熱した。これにより、アクリル基板からアルミニウムドープ酸化亜鉛膜が剥離し、エタノールが完全に蒸発してPET基板が乾燥するとともに、アルミニウムドープ酸化亜鉛膜がPET基板の一面に付着した。
このようにして、アクリル基板上に形成されたアルミニウムドープ酸化亜鉛膜が、PET基板の一面に転写された。
また、PET基板の一面に転写されたアルミニウムドープ酸化亜鉛膜を走査型電子顕微鏡(SEM)により観察した。図6は、PET基板の一面に転写されたアルミニウムドープ酸化亜鉛膜のSEM像である。図6に示すように、得られたアルミニウムドープ酸化亜鉛膜は、クラックや微粒子、不純物もなくPET基板上に転写されていることが分かった。
また、PET基板の一面に転写されたアルミニウムドープ酸化亜鉛膜について、X線回折法(X−ray Diffraction:XRD)により結晶構造解析を行った。図8は、XRDによるθ−2θスキャンの結果であり、横軸が2θ、縦軸が強度を示している。図8に示すように、酸化亜鉛(002)の回折ピークのみが確認され、アルミニウムドープ酸化亜鉛膜はC軸方向に強く配向していることが分かった。つまり、このように高い結晶性でC軸配向しているため、PET基板の一面に転写されたアルミニウムドープ酸化亜鉛膜は高い伝導性を示すといえる。
シリコン酸化膜(膜厚200nm)が形成されたSi基板を用意した。次に、このシリコン酸化膜上に、スパッタリング法を用いて、銀(Ag)からなるソース電極及びドレイン電極を形成した。このときのソース電極及びドレイン電極の膜厚は50nmであった。
そして、スパッタリング法を用いて、酸化亜鉛膜(150nm)が形成されたアクリル基板を用意し、ソース電極及びドレイン電極が形成されたSi基板上にエタノールを400rpmで3秒間スピンコートしてから、アクリル基板とSi基板とを接触させた。
その後、アクリル基板を90℃に加熱し、5分後にアクリル基板とSi基板とを剥がしたところ、ソース電極とドレイン電極との間、及びソース電極上、ドレイン電極上に酸化亜鉛膜が転写された。そして、Si基板をゲート電極とし、作製した薄膜トランジスタの特性を評価した。
その結果、図9に示すように、作製した薄膜トランジスタはトランジスタとして動作した。以上のように、電極上や電極間にも離型層や接着層を用いずに薄膜を転写できることができ、このような薄膜を半導体層とする薄膜トランジスタの動作も確認することできた。
Claims (11)
- 第一基板に形成された薄膜を第二基板に転写する、薄膜の転写方法であって、
前記第一基板に形成された前記薄膜と、前記第二基板とを液体を介して接触させることと、
前記薄膜を浸透して前記第一基板に接触した前記液体により、前記第一基板を膨潤させることと、
前記液体を乾燥させ、前記薄膜を前記第二基板に付着させることと、を有する薄膜の転写方法。 - 前記液体に対する前記第一基板のぬれ性は、前記液体に対する前記第二基板のぬれ性よりも低い請求項1に記載の薄膜の転写方法。
- 前記液体はアルコールを含む請求項1または2に記載の薄膜の転写方法。
- 前記第一基板はアクリル樹脂から構成される請求項1〜3のいずれか1項に記載の薄膜の転写方法。
- 前記第二基板は樹脂材料から構成される請求項1〜4のいずれか1項に記載の薄膜の転写方法。
- 前記第二基板は可撓性を有する請求項1〜5のいずれか1項に記載の薄膜の転写方法。
- 前記薄膜は酸化物半導体である請求項1〜6のいずれか1項に記載の薄膜の転写方法。
- 前記酸化物半導体は酸化亜鉛である請求項7に記載の薄膜の転写方法。
- 前記第一基板に形成された前記薄膜は、真空成膜法によって形成される請求項1〜8のいずれか1項に記載の薄膜の転写方法。
- ソース電極及びドレイン電極に接触して設けられる半導体層を形成することを含む薄膜トランジスタの製造方法であって、前記半導体層を、請求項1〜9のいずれか1項に記載の薄膜の転写方法により形成する、薄膜トランジスタの製造方法。
- 薄膜トランジスタと接続する画素電極を形成することを含む液晶表示装置の画素電極形成方法であって、前記画素電極を、請求項1〜9のいずれか1項に記載の薄膜の転写方法により形成する、液晶表示装置の画素電極形成方法。
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