KR20130038829A - 에피택셜 구조, 그 제조방법, 및 그것을 포함하는 소자 - Google Patents

에피택셜 구조, 그 제조방법, 및 그것을 포함하는 소자 Download PDF

Info

Publication number
KR20130038829A
KR20130038829A KR1020127026096A KR20127026096A KR20130038829A KR 20130038829 A KR20130038829 A KR 20130038829A KR 1020127026096 A KR1020127026096 A KR 1020127026096A KR 20127026096 A KR20127026096 A KR 20127026096A KR 20130038829 A KR20130038829 A KR 20130038829A
Authority
KR
South Korea
Prior art keywords
poly
film
substrate
ink
feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127026096A
Other languages
English (en)
Korean (ko)
Inventor
죠르그 로켄버거
파비오 쥬르커
마오 타카시마
Original Assignee
코비오 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코비오 인코포레이티드 filed Critical 코비오 인코포레이티드
Publication of KR20130038829A publication Critical patent/KR20130038829A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
KR1020127026096A 2010-04-06 2011-04-06 에피택셜 구조, 그 제조방법, 및 그것을 포함하는 소자 Ceased KR20130038829A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32145810P 2010-04-06 2010-04-06
US61/321,458 2010-04-06
PCT/US2011/031392 WO2011127147A1 (en) 2010-04-06 2011-04-06 Epitaxial structures, methods of forming the same, and devices including the same

Publications (1)

Publication Number Publication Date
KR20130038829A true KR20130038829A (ko) 2013-04-18

Family

ID=44708589

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127026096A Ceased KR20130038829A (ko) 2010-04-06 2011-04-06 에피택셜 구조, 그 제조방법, 및 그것을 포함하는 소자

Country Status (7)

Country Link
US (1) US8900915B2 (https=)
EP (1) EP2556539A4 (https=)
JP (2) JP6296793B2 (https=)
KR (1) KR20130038829A (https=)
CN (1) CN102822985B (https=)
TW (1) TWI559372B (https=)
WO (1) WO2011127147A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180023686A (ko) * 2016-08-26 2018-03-07 한국과학기술연구원 3족-5족 화합물 반도체 소자 제조 방법 및 그 반도체 소자

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815104B2 (en) 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
GB0809721D0 (en) * 2008-05-28 2008-07-02 Univ Bath Improvements in or relating to joints and/or implants
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
TWI559372B (zh) * 2010-04-06 2016-11-21 薄膜電子Ａｓａ公司 磊晶結構、其形成方法及含此結構之元件
US8828765B2 (en) * 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
DE102010024309A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer photovoltaischen Solarzelle
KR20120064364A (ko) * 2010-12-09 2012-06-19 삼성전자주식회사 태양 전지의 제조 방법
JP5677469B2 (ja) * 2011-01-27 2015-02-25 京セラ株式会社 太陽電池素子の製造方法、太陽電池素子、および太陽電池モジュール
US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
US11251318B2 (en) 2011-03-08 2022-02-15 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
US20120312361A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Emitter structure and fabrication method for silicon heterojunction solar cell
US8871620B2 (en) * 2011-07-28 2014-10-28 International Business Machines Corporation III-V photovoltaic elements
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8852989B2 (en) * 2011-10-27 2014-10-07 Intermolecular, Inc. Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
US20150056743A1 (en) * 2012-03-12 2015-02-26 Mitsubishi Electric Corporation Manufacturing method of solar cell
WO2013141561A1 (ko) * 2012-03-19 2013-09-26 서울옵토디바이스주식회사 에피층과 성장 기판 분리 방법 및 이를 이용한 반도체 소자
CN103367525B (zh) * 2012-03-30 2016-12-14 清华大学 太阳能电池的制备方法
CN103367477A (zh) * 2012-03-30 2013-10-23 清华大学 太阳能电池
US9508887B2 (en) 2012-10-25 2016-11-29 Tetrasun, Inc. Methods of forming solar cells
US9059212B2 (en) 2012-10-31 2015-06-16 International Business Machines Corporation Back-end transistors with highly doped low-temperature contacts
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
US8642378B1 (en) 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
BR112015015027A2 (pt) 2012-12-20 2017-07-11 3M Innovative Properties Co impressão de múltiplas tintas para conseguir registro de precisão durante processamento subsequente
NL2010713C2 (en) * 2013-04-26 2014-10-29 Univ Delft Tech Method of forming silicon on a substrate.
DE102013219603A1 (de) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
DE102014208054A1 (de) * 2014-04-29 2015-10-29 Evonik Degussa Gmbh Verfahren zur Erzeugung unterschiedlich dotierter Halbleiter
KR102399443B1 (ko) * 2014-06-20 2022-05-19 쓰리엠 이노베이티브 프로퍼티즈 캄파니 후속 처리 동안 정밀 정합을 달성하기 위한 다수의 잉크들의 인쇄
WO2016001454A1 (es) * 2014-06-30 2016-01-07 Oxolutia, S. L. Método de fabricación de láminas delgadas de óxidos epitaxiales mediante impresión de chorro de tinta
DE102014223465A1 (de) * 2014-11-18 2016-05-19 Evonik Degussa Gmbh Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten
US9997397B2 (en) * 2015-02-13 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
JP6564874B2 (ja) * 2015-11-04 2019-08-21 株式会社カネカ 結晶シリコン系太陽電池の製造方法および結晶シリコン系太陽電池モジュールの製造方法
US9453190B1 (en) 2015-11-12 2016-09-27 International Business Machines Corporation Surface treatment of textured silicon
KR102599917B1 (ko) * 2016-10-05 2023-11-09 신에쓰 가가꾸 고교 가부시끼가이샤 고광전변환효율 태양전지의 제조방법 및 고광전변환효율 태양전지
CN109983586B (zh) 2016-11-03 2024-03-12 道达尔销售服务公司 太阳能电池的表面处理
US10043970B2 (en) 2016-12-15 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Determining a characteristic of a monitored layer on an integrated chip
DE102017118899B4 (de) 2016-12-15 2020-06-18 Taiwan Semiconductor Manufacturing Co. Ltd. Dichtungsringstrukturen und Verfahren zu ihrer Herstellung
US10453832B2 (en) 2016-12-15 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structures and methods of forming same
US10163974B2 (en) 2017-05-17 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming absorption enhancement structure for image sensor
US10438980B2 (en) * 2017-05-31 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with a high absorption layer
WO2018232698A1 (zh) * 2017-06-22 2018-12-27 深圳市柔宇科技有限公司 阵列基板的制作设备及阵列基板的制作方法
US10559563B2 (en) 2017-06-26 2020-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing monolithic three-dimensional (3D) integrated circuits
US11404270B2 (en) 2018-11-30 2022-08-02 Texas Instruments Incorporated Microelectronic device substrate formed by additive process
US10910465B2 (en) 2018-12-28 2021-02-02 Texas Instruments Incorporated 3D printed semiconductor package
US10861715B2 (en) 2018-12-28 2020-12-08 Texas Instruments Incorporated 3D printed semiconductor package
WO2020159854A1 (en) * 2019-01-28 2020-08-06 Tokyo Electron Limited Photo-assisted chemical vapor etch for selective removal of ruthenium
TWI705572B (zh) * 2019-07-03 2020-09-21 太極能源科技股份有限公司 具有氮氧化矽鈍化層的太陽電池及其製造方法
TWI725583B (zh) * 2019-10-22 2021-04-21 國立勤益科技大學 可撓式可見光檢測器
US11189565B2 (en) 2020-02-19 2021-11-30 Nanya Technology Corporation Semiconductor device with programmable anti-fuse feature and method for fabricating the same
US20220157604A1 (en) * 2020-11-16 2022-05-19 Applied Materials, Inc. Apparatus, systems, and methods of using atomic hydrogen radicals with selective epitaxial deposition
TWI768801B (zh) * 2021-03-31 2022-06-21 世界先進積體電路股份有限公司 半導體結構及其製作方法
US12027413B2 (en) 2021-08-22 2024-07-02 Vanguard International Semiconductor Corporation Semiconductor structure and method of fabricating the same
WO2023140840A1 (en) * 2022-01-20 2023-07-27 Applied Materials, Inc. Methods for near surface work function engineering
CN115513309B (zh) * 2022-08-31 2025-04-04 隆基绿能科技股份有限公司 背接触太阳能电池及其制备方法
CN116606166B (zh) * 2023-04-26 2024-05-24 贵州省紫安新材料科技有限公司 一种快速制备碳化硅非晶涂层的方法
JP7501766B1 (ja) 2023-10-03 2024-06-18 信越半導体株式会社 エピタキシャル基板上への塗布膜形成方法及び接合型ウェーハの製造方法
WO2025221932A1 (en) * 2024-04-19 2025-10-23 Lam Research Corporation Remote plasma-based deposition
CN119967912B (zh) * 2025-04-08 2025-07-22 金阳(泉州)新能源科技有限公司 背接触电池及其制备方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893218A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体薄膜構造の製造方法
JP4092541B2 (ja) * 2000-12-08 2008-05-28 ソニー株式会社 半導体薄膜の形成方法及び半導体装置の製造方法
JP2002314115A (ja) * 2001-04-13 2002-10-25 Daido Steel Co Ltd 太陽電池セル
JP2004134440A (ja) * 2002-10-08 2004-04-30 Okutekku:Kk シリコン膜の形態学的変化法
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7879696B2 (en) 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7498015B1 (en) 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
JP2006012913A (ja) * 2004-06-22 2006-01-12 Sharp Corp 太陽電池セルの製造方法
US7314513B1 (en) * 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
US8461628B2 (en) * 2005-03-18 2013-06-11 Kovio, Inc. MOS transistor with laser-patterned metal gate, and method for making the same
US7619248B1 (en) 2005-03-18 2009-11-17 Kovio, Inc. MOS transistor with self-aligned source and drain, and method for making the same
KR101506136B1 (ko) 2006-10-24 2015-03-26 다우 코닝 코포레이션 네오펜타실란을 포함하는 조성물 및 이의 제조 방법
US7776724B2 (en) 2006-12-07 2010-08-17 Innovalight, Inc. Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material
WO2008076744A1 (en) * 2006-12-13 2008-06-26 Innovalight, Inc. Methods of forming an epitaxial layer on a group iv semiconductor substrate
EP1936698A1 (en) * 2006-12-18 2008-06-25 BP Solar Espana, S.A. Unipersonal Process for manufacturing photovoltaic cells
US7718707B2 (en) 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
EP2140483A1 (en) 2007-04-04 2010-01-06 Innovalight, Inc. Methods for optimizing thin film formation with reactive gases
US8530589B2 (en) 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
KR20090029494A (ko) * 2007-09-18 2009-03-23 엘지전자 주식회사 비정질 실리콘 및 나노 결정질 실리콘의 복합 박막을이용한 태양전지 및 그 제조방법
JP2011503910A (ja) * 2007-11-19 2011-01-27 アプライド マテリアルズ インコーポレイテッド パターン付きエッチング剤を用いた太陽電池コンタクト形成プロセス
US20090242019A1 (en) * 2007-12-19 2009-10-01 Silexos, Inc Method to create high efficiency, low cost polysilicon or microcrystalline solar cell on flexible substrates using multilayer high speed inkjet printing and, rapid annealing and light trapping
US7851336B2 (en) 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8361834B2 (en) 2008-03-18 2013-01-29 Innovalight, Inc. Methods of forming a low resistance silicon-metal contact
US7704866B2 (en) 2008-03-18 2010-04-27 Innovalight, Inc. Methods for forming composite nanoparticle-metal metallization contacts on a substrate
CN102047389B (zh) * 2008-04-25 2013-06-19 英诺瓦莱特公司 使用ⅳ族纳米颗粒在晶片基底上形成结区
US7897489B2 (en) 2008-06-17 2011-03-01 Innovalight, Inc. Selective activation of hydrogen passivated silicon and germanium surfaces
KR20110046439A (ko) * 2008-07-24 2011-05-04 코비오 인코포레이티드 알루미늄 잉크 및 이의 제조 방법, 알루미늄 잉크 증착 방법 및 알루미늄 잉크의 인쇄 및/또는 증착에 의해 형성된 필름
US7615393B1 (en) 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate
US8420517B2 (en) 2009-07-02 2013-04-16 Innovalight, Inc. Methods of forming a multi-doped junction with silicon-containing particles
US20110003466A1 (en) 2009-07-02 2011-01-06 Innovalight, Inc. Methods of forming a multi-doped junction with porous silicon
US8138070B2 (en) 2009-07-02 2012-03-20 Innovalight, Inc. Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
TWI559372B (zh) * 2010-04-06 2016-11-21 薄膜電子Ａｓａ公司 磊晶結構、其形成方法及含此結構之元件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180023686A (ko) * 2016-08-26 2018-03-07 한국과학기술연구원 3족-5족 화합물 반도체 소자 제조 방법 및 그 반도체 소자

Also Published As

Publication number Publication date
TWI559372B (zh) 2016-11-21
EP2556539A4 (en) 2014-08-06
WO2011127147A1 (en) 2011-10-13
CN102822985B (zh) 2016-08-03
JP6296793B2 (ja) 2018-03-20
US8900915B2 (en) 2014-12-02
TW201203320A (en) 2012-01-16
US20110240997A1 (en) 2011-10-06
JP2017085146A (ja) 2017-05-18
EP2556539A1 (en) 2013-02-13
JP2013524537A (ja) 2013-06-17
CN102822985A (zh) 2012-12-12

Similar Documents

Publication Publication Date Title
US8900915B2 (en) Epitaxial structures and methods of forming the same
CA2701412C (en) Profile engineered thin film devices and structures
CA2761748C (en) Semiconductor devices on diffusion barrier coated substrates and methods of making the same
US20130105806A1 (en) Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
JPWO2000059014A1 (ja) シリコン膜形成方法およびインクジェット用インク組成物
CN104813482B (zh) 用于cigs光伏器件的钼基材
CN102347391B (zh) 晶圆型太阳能电池及其制造方法
US20150249164A1 (en) Method of forming functional coatings on silicon substrates
US9887313B2 (en) Method for producing differently doped semiconductors
JP2010267787A (ja) 半導体装置の製造方法
KR102070852B1 (ko) Czts계 태양전지 및 이의 제조방법
KR20170085079A (ko) 도핑된 다결정 반도체 층들을 제조하기 위한 방법
US9653306B2 (en) Method for forming crystalline cobalt silicide film
KR20150089592A (ko) 태양전지의 도핑 및 전극 형성방법과 그 태양전지
JP2004047601A (ja) 鉄シリサイド半導体薄膜及びその製造方法
CN118630097A (zh) 一种双面TOPCOn电池的退火工艺
TW200818509A (en) Printed, self-aligned, top-gate thin film transistor
JP2007165920A (ja) β−ＦｅＳｉ２半導体薄膜の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000