JP2013513956A5 - - Google Patents

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Publication number
JP2013513956A5
JP2013513956A5 JP2012543557A JP2012543557A JP2013513956A5 JP 2013513956 A5 JP2013513956 A5 JP 2013513956A5 JP 2012543557 A JP2012543557 A JP 2012543557A JP 2012543557 A JP2012543557 A JP 2012543557A JP 2013513956 A5 JP2013513956 A5 JP 2013513956A5
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JP
Japan
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region
web
semiconductor
semiconductor substrate
line
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JP2012543557A
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English (en)
Japanese (ja)
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JP2013513956A (ja
JP5744054B2 (ja
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Priority claimed from DE102009058345.9A external-priority patent/DE102009058345B4/de
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Publication of JP2013513956A5 publication Critical patent/JP2013513956A5/ja
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JP2012543557A 2009-12-15 2010-11-12 半導体基体を製造する方法 Active JP5744054B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009058345.9 2009-12-15
DE102009058345.9A DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser
PCT/EP2010/067402 WO2011072964A1 (de) 2009-12-15 2010-11-12 Halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2013513956A JP2013513956A (ja) 2013-04-22
JP2013513956A5 true JP2013513956A5 (enExample) 2013-09-26
JP5744054B2 JP5744054B2 (ja) 2015-07-01

Family

ID=43567921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012543557A Active JP5744054B2 (ja) 2009-12-15 2010-11-12 半導体基体を製造する方法

Country Status (8)

Country Link
US (1) US8879596B2 (enExample)
EP (1) EP2514049B1 (enExample)
JP (1) JP5744054B2 (enExample)
KR (1) KR101723143B1 (enExample)
CN (1) CN102668277B (enExample)
DE (1) DE102009058345B4 (enExample)
TW (1) TWI438992B (enExample)
WO (1) WO2011072964A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013216527A1 (de) 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2044717A1 (en) 1990-06-18 1991-12-19 Candadai S. Ramadoss Process for the separation of proteins, polypeptides or metals
JPH0679172U (ja) * 1993-04-14 1994-11-04 松下電器産業株式会社 半導体レーザ
EP0874405A3 (en) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
JPH11233877A (ja) * 1998-02-16 1999-08-27 Nec Corp アレイ型レーザダイオード
US6984841B2 (en) 2001-02-15 2006-01-10 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and production thereof
WO2003038957A1 (fr) 2001-10-29 2003-05-08 Sharp Kabushiki Kaisha Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur
US6812496B2 (en) 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
JP2003332676A (ja) 2002-05-08 2003-11-21 Mitsubishi Electric Corp 半導体光装置
JP2004095859A (ja) * 2002-08-30 2004-03-25 Sharp Corp 半導体レーザ及びその製造方法
US7372077B2 (en) * 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
US7704860B2 (en) * 2004-11-22 2010-04-27 Panasonic Corporation Nitride-based semiconductor device and method for fabricating the same
JP4617907B2 (ja) * 2005-02-03 2011-01-26 ソニー株式会社 光集積型半導体発光素子
JP2007173402A (ja) * 2005-12-20 2007-07-05 Matsushita Electric Ind Co Ltd 半導体レーザ装置
CN101529674B (zh) 2006-10-17 2011-06-29 三洋电机株式会社 氮化物类半导体激光元件及其制造方法
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2009088270A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2009200341A (ja) * 2008-02-22 2009-09-03 Sharp Corp 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法

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