TWI438992B - 半導體雷射 - Google Patents
半導體雷射 Download PDFInfo
- Publication number
- TWI438992B TWI438992B TW099143215A TW99143215A TWI438992B TW I438992 B TWI438992 B TW I438992B TW 099143215 A TW099143215 A TW 099143215A TW 99143215 A TW99143215 A TW 99143215A TW I438992 B TWI438992 B TW I438992B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- region
- semiconductor structure
- bridge
- bridge region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 191
- 230000005855 radiation Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 9
- 230000035515 penetration Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- -1 tantalum nitride Chemical class 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009058345.9A DE102009058345B4 (de) | 2009-12-15 | 2009-12-15 | Halbleiterlaser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201131918A TW201131918A (en) | 2011-09-16 |
| TWI438992B true TWI438992B (zh) | 2014-05-21 |
Family
ID=43567921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099143215A TWI438992B (zh) | 2009-12-15 | 2010-12-10 | 半導體雷射 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8879596B2 (enExample) |
| EP (1) | EP2514049B1 (enExample) |
| JP (1) | JP5744054B2 (enExample) |
| KR (1) | KR101723143B1 (enExample) |
| CN (1) | CN102668277B (enExample) |
| DE (1) | DE102009058345B4 (enExample) |
| TW (1) | TWI438992B (enExample) |
| WO (1) | WO2011072964A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013107971A1 (de) * | 2013-07-25 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| DE102013216527A1 (de) | 2013-08-21 | 2015-02-26 | Osram Opto Semiconductors Gmbh | Laserbauelement und Verfahren zum Herstellen eines Laserbauelements |
| DE102013220641A1 (de) | 2013-10-14 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit einseitig verbreiterter Ridgestruktur |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2044717A1 (en) | 1990-06-18 | 1991-12-19 | Candadai S. Ramadoss | Process for the separation of proteins, polypeptides or metals |
| JPH0679172U (ja) * | 1993-04-14 | 1994-11-04 | 松下電器産業株式会社 | 半導体レーザ |
| EP0874405A3 (en) | 1997-03-25 | 2004-09-15 | Mitsubishi Cable Industries, Ltd. | GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| JPH11233877A (ja) * | 1998-02-16 | 1999-08-27 | Nec Corp | アレイ型レーザダイオード |
| US6984841B2 (en) | 2001-02-15 | 2006-01-10 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting element and production thereof |
| WO2003038957A1 (fr) | 2001-10-29 | 2003-05-08 | Sharp Kabushiki Kaisha | Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur |
| US6812496B2 (en) | 2002-01-10 | 2004-11-02 | Sharp Kabushiki Kaisha | Group III nitride semiconductor laser device |
| JP2003332676A (ja) | 2002-05-08 | 2003-11-21 | Mitsubishi Electric Corp | 半導体光装置 |
| JP2004095859A (ja) * | 2002-08-30 | 2004-03-25 | Sharp Corp | 半導体レーザ及びその製造方法 |
| US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US7704860B2 (en) * | 2004-11-22 | 2010-04-27 | Panasonic Corporation | Nitride-based semiconductor device and method for fabricating the same |
| JP4617907B2 (ja) * | 2005-02-03 | 2011-01-26 | ソニー株式会社 | 光集積型半導体発光素子 |
| JP2007173402A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
| CN101529674B (zh) | 2006-10-17 | 2011-06-29 | 三洋电机株式会社 | 氮化物类半导体激光元件及其制造方法 |
| US20080130698A1 (en) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
| JP2009088270A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
| JP2009200478A (ja) * | 2008-01-21 | 2009-09-03 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
| JP2009200341A (ja) * | 2008-02-22 | 2009-09-03 | Sharp Corp | 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法 |
-
2009
- 2009-12-15 DE DE102009058345.9A patent/DE102009058345B4/de active Active
-
2010
- 2010-11-12 JP JP2012543557A patent/JP5744054B2/ja active Active
- 2010-11-12 US US13/515,024 patent/US8879596B2/en active Active
- 2010-11-12 CN CN201080057349.9A patent/CN102668277B/zh active Active
- 2010-11-12 EP EP10779771.4A patent/EP2514049B1/de active Active
- 2010-11-12 WO PCT/EP2010/067402 patent/WO2011072964A1/de not_active Ceased
- 2010-11-12 KR KR1020127018374A patent/KR101723143B1/ko active Active
- 2010-12-10 TW TW099143215A patent/TWI438992B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013513956A (ja) | 2013-04-22 |
| DE102009058345B4 (de) | 2021-05-12 |
| WO2011072964A1 (de) | 2011-06-23 |
| TW201131918A (en) | 2011-09-16 |
| KR101723143B1 (ko) | 2017-04-04 |
| JP5744054B2 (ja) | 2015-07-01 |
| CN102668277B (zh) | 2014-06-18 |
| DE102009058345A1 (de) | 2011-06-16 |
| US8879596B2 (en) | 2014-11-04 |
| KR20120112559A (ko) | 2012-10-11 |
| CN102668277A (zh) | 2012-09-12 |
| EP2514049B1 (de) | 2018-08-08 |
| US20120287956A1 (en) | 2012-11-15 |
| EP2514049A1 (de) | 2012-10-24 |
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