CN102668277B - 半导体激光器 - Google Patents

半导体激光器 Download PDF

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Publication number
CN102668277B
CN102668277B CN201080057349.9A CN201080057349A CN102668277B CN 102668277 B CN102668277 B CN 102668277B CN 201080057349 A CN201080057349 A CN 201080057349A CN 102668277 B CN102668277 B CN 102668277B
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Prior art keywords
semiconductor
semiconductor body
region
bridge
bridge shape
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CN201080057349.9A
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English (en)
Chinese (zh)
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CN102668277A (zh
Inventor
迪米特里·迪尼
马克·希尔加利斯
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102668277A publication Critical patent/CN102668277A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN201080057349.9A 2009-12-15 2010-11-12 半导体激光器 Active CN102668277B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009058345.9A DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser
DE102009058345.9 2009-12-15
PCT/EP2010/067402 WO2011072964A1 (de) 2009-12-15 2010-11-12 Halbleiterlaser

Publications (2)

Publication Number Publication Date
CN102668277A CN102668277A (zh) 2012-09-12
CN102668277B true CN102668277B (zh) 2014-06-18

Family

ID=43567921

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080057349.9A Active CN102668277B (zh) 2009-12-15 2010-11-12 半导体激光器

Country Status (8)

Country Link
US (1) US8879596B2 (enExample)
EP (1) EP2514049B1 (enExample)
JP (1) JP5744054B2 (enExample)
KR (1) KR101723143B1 (enExample)
CN (1) CN102668277B (enExample)
DE (1) DE102009058345B4 (enExample)
TW (1) TWI438992B (enExample)
WO (1) WO2011072964A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1519998A (zh) * 2003-02-07 2004-08-11 ������������ʽ���� 半导体元件及其制造方法
CN101529674A (zh) * 2006-10-17 2009-09-09 三洋电机株式会社 氮化物类半导体激光元件及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2044717A1 (en) 1990-06-18 1991-12-19 Candadai S. Ramadoss Process for the separation of proteins, polypeptides or metals
JPH0679172U (ja) * 1993-04-14 1994-11-04 松下電器産業株式会社 半導体レーザ
EP0874405A3 (en) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
JPH11233877A (ja) * 1998-02-16 1999-08-27 Nec Corp アレイ型レーザダイオード
WO2002065556A1 (en) 2001-02-15 2002-08-22 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and production therefor
US7498608B2 (en) * 2001-10-29 2009-03-03 Sharp Kabushiki Kaisha Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
US6812496B2 (en) 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
JP2003332676A (ja) * 2002-05-08 2003-11-21 Mitsubishi Electric Corp 半導体光装置
JP2004095859A (ja) 2002-08-30 2004-03-25 Sharp Corp 半導体レーザ及びその製造方法
US7704860B2 (en) * 2004-11-22 2010-04-27 Panasonic Corporation Nitride-based semiconductor device and method for fabricating the same
JP4617907B2 (ja) * 2005-02-03 2011-01-26 ソニー株式会社 光集積型半導体発光素子
JP2007173402A (ja) 2005-12-20 2007-07-05 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2009088270A (ja) 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2009200341A (ja) * 2008-02-22 2009-09-03 Sharp Corp 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1519998A (zh) * 2003-02-07 2004-08-11 ������������ʽ���� 半导体元件及其制造方法
CN101529674A (zh) * 2006-10-17 2009-09-09 三洋电机株式会社 氮化物类半导体激光元件及其制造方法

Also Published As

Publication number Publication date
JP2013513956A (ja) 2013-04-22
DE102009058345A1 (de) 2011-06-16
DE102009058345B4 (de) 2021-05-12
US20120287956A1 (en) 2012-11-15
US8879596B2 (en) 2014-11-04
WO2011072964A1 (de) 2011-06-23
JP5744054B2 (ja) 2015-07-01
KR20120112559A (ko) 2012-10-11
EP2514049A1 (de) 2012-10-24
CN102668277A (zh) 2012-09-12
TWI438992B (zh) 2014-05-21
EP2514049B1 (de) 2018-08-08
TW201131918A (en) 2011-09-16
KR101723143B1 (ko) 2017-04-04

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