DE102009058345B4 - Halbleiterlaser - Google Patents

Halbleiterlaser Download PDF

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Publication number
DE102009058345B4
DE102009058345B4 DE102009058345.9A DE102009058345A DE102009058345B4 DE 102009058345 B4 DE102009058345 B4 DE 102009058345B4 DE 102009058345 A DE102009058345 A DE 102009058345A DE 102009058345 B4 DE102009058345 B4 DE 102009058345B4
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DE
Germany
Prior art keywords
web
shaped
semiconductor
semiconductor body
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009058345.9A
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German (de)
English (en)
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DE102009058345A1 (de
Inventor
Dr. Dini Dimitri
Dr. Schillgalies Marc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009058345.9A priority Critical patent/DE102009058345B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US13/515,024 priority patent/US8879596B2/en
Priority to EP10779771.4A priority patent/EP2514049B1/de
Priority to CN201080057349.9A priority patent/CN102668277B/zh
Priority to JP2012543557A priority patent/JP5744054B2/ja
Priority to KR1020127018374A priority patent/KR101723143B1/ko
Priority to PCT/EP2010/067402 priority patent/WO2011072964A1/de
Priority to TW099143215A priority patent/TWI438992B/zh
Publication of DE102009058345A1 publication Critical patent/DE102009058345A1/de
Application granted granted Critical
Publication of DE102009058345B4 publication Critical patent/DE102009058345B4/de
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Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE102009058345.9A 2009-12-15 2009-12-15 Halbleiterlaser Active DE102009058345B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009058345.9A DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser
EP10779771.4A EP2514049B1 (de) 2009-12-15 2010-11-12 Verfahren zur Herstellung lichtemittierender Halbleiterkörper
CN201080057349.9A CN102668277B (zh) 2009-12-15 2010-11-12 半导体激光器
JP2012543557A JP5744054B2 (ja) 2009-12-15 2010-11-12 半導体基体を製造する方法
US13/515,024 US8879596B2 (en) 2009-12-15 2010-11-12 Semiconductor laser
KR1020127018374A KR101723143B1 (ko) 2009-12-15 2010-11-12 반도체 레이저
PCT/EP2010/067402 WO2011072964A1 (de) 2009-12-15 2010-11-12 Halbleiterlaser
TW099143215A TWI438992B (zh) 2009-12-15 2010-12-10 半導體雷射

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009058345.9A DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser

Publications (2)

Publication Number Publication Date
DE102009058345A1 DE102009058345A1 (de) 2011-06-16
DE102009058345B4 true DE102009058345B4 (de) 2021-05-12

Family

ID=43567921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009058345.9A Active DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser

Country Status (8)

Country Link
US (1) US8879596B2 (enExample)
EP (1) EP2514049B1 (enExample)
JP (1) JP5744054B2 (enExample)
KR (1) KR101723143B1 (enExample)
CN (1) CN102668277B (enExample)
DE (1) DE102009058345B4 (enExample)
TW (1) TWI438992B (enExample)
WO (1) WO2011072964A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0936706A1 (en) * 1998-02-16 1999-08-18 Nec Corporation Array type laser diode
DE10320376A1 (de) * 2002-05-08 2003-11-27 Mitsubishi Electric Corp Optische Halbleitervorrichtung
US6812496B2 (en) * 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
US20060192209A1 (en) * 2005-02-03 2006-08-31 Osamu Maeda Optical integrated semiconductor light emitting device
US20080272462A1 (en) * 2004-11-22 2008-11-06 Toshitaka Shimamoto Nitride-Based Semiconductor Device and Method for Fabricating the Same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2044717A1 (en) 1990-06-18 1991-12-19 Candadai S. Ramadoss Process for the separation of proteins, polypeptides or metals
JPH0679172U (ja) * 1993-04-14 1994-11-04 松下電器産業株式会社 半導体レーザ
EP0874405A3 (en) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
WO2002065556A1 (en) 2001-02-15 2002-08-22 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and production therefor
US7498608B2 (en) * 2001-10-29 2009-03-03 Sharp Kabushiki Kaisha Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
JP2004095859A (ja) 2002-08-30 2004-03-25 Sharp Corp 半導体レーザ及びその製造方法
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP2007173402A (ja) 2005-12-20 2007-07-05 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US20100085996A1 (en) 2006-10-17 2010-04-08 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2009088270A (ja) 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2009200341A (ja) * 2008-02-22 2009-09-03 Sharp Corp 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0936706A1 (en) * 1998-02-16 1999-08-18 Nec Corporation Array type laser diode
US6812496B2 (en) * 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
DE10320376A1 (de) * 2002-05-08 2003-11-27 Mitsubishi Electric Corp Optische Halbleitervorrichtung
US20080272462A1 (en) * 2004-11-22 2008-11-06 Toshitaka Shimamoto Nitride-Based Semiconductor Device and Method for Fabricating the Same
US20060192209A1 (en) * 2005-02-03 2006-08-31 Osamu Maeda Optical integrated semiconductor light emitting device

Also Published As

Publication number Publication date
JP2013513956A (ja) 2013-04-22
DE102009058345A1 (de) 2011-06-16
US20120287956A1 (en) 2012-11-15
US8879596B2 (en) 2014-11-04
WO2011072964A1 (de) 2011-06-23
JP5744054B2 (ja) 2015-07-01
KR20120112559A (ko) 2012-10-11
EP2514049A1 (de) 2012-10-24
CN102668277A (zh) 2012-09-12
CN102668277B (zh) 2014-06-18
TWI438992B (zh) 2014-05-21
EP2514049B1 (de) 2018-08-08
TW201131918A (en) 2011-09-16
KR101723143B1 (ko) 2017-04-04

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