JP2013511144A5 - - Google Patents
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- Publication number
- JP2013511144A5 JP2013511144A5 JP2012538454A JP2012538454A JP2013511144A5 JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5 JP 2012538454 A JP2012538454 A JP 2012538454A JP 2012538454 A JP2012538454 A JP 2012538454A JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5
- Authority
- JP
- Japan
- Prior art keywords
- cmp composition
- cmp
- particles
- polymer
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims 26
- 239000010954 inorganic particle Substances 0.000 claims 16
- 229920000642 polymer Polymers 0.000 claims 16
- 239000007788 liquid Substances 0.000 claims 8
- 238000005498 polishing Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 3
- 125000004663 dialkyl amino group Chemical group 0.000 claims 3
- 125000002883 imidazolyl group Chemical group 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 125000000524 functional group Chemical group 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26087309P | 2009-11-13 | 2009-11-13 | |
| US61/260,873 | 2009-11-13 | ||
| PCT/IB2010/055101 WO2011058503A1 (en) | 2009-11-13 | 2010-11-10 | A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511144A JP2013511144A (ja) | 2013-03-28 |
| JP2013511144A5 true JP2013511144A5 (enExample) | 2016-01-28 |
| JP6005516B2 JP6005516B2 (ja) | 2016-10-12 |
Family
ID=43991260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012538454A Expired - Fee Related JP6005516B2 (ja) | 2009-11-13 | 2010-11-10 | 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9255214B2 (enExample) |
| EP (1) | EP2499210B1 (enExample) |
| JP (1) | JP6005516B2 (enExample) |
| KR (1) | KR101809762B1 (enExample) |
| CN (1) | CN102597142B (enExample) |
| IL (1) | IL219144A (enExample) |
| MY (1) | MY161863A (enExample) |
| RU (1) | RU2579597C2 (enExample) |
| SG (1) | SG10201407348PA (enExample) |
| TW (1) | TWI500722B (enExample) |
| WO (1) | WO2011058503A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5574702B2 (ja) * | 2009-12-28 | 2014-08-20 | 日揮触媒化成株式会社 | 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法 |
| JP6004943B2 (ja) | 2010-02-24 | 2016-10-12 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 水性研磨剤及びグラフトコポリマー並びにそれらをパターン形成された及び構造化されていない金属表面の研磨プロセスに用いる使用 |
| EP2625236B1 (en) | 2010-10-07 | 2017-12-13 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| RU2588620C2 (ru) | 2010-12-10 | 2016-07-10 | Басф Се | Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния |
| EP2753670B1 (en) | 2011-09-07 | 2016-06-22 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a glycoside |
| ES2545857T3 (es) | 2011-11-10 | 2015-09-16 | Basf Se | Aditivo de baño de estucado de papel que comprende monómero de ácido, monómero asociativo y monómero no iónico |
| EP2682441A1 (en) * | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| US10946494B2 (en) | 2015-03-10 | 2021-03-16 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
| KR20170030143A (ko) * | 2015-09-08 | 2017-03-17 | 삼성에스디아이 주식회사 | 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| KR102524807B1 (ko) | 2016-11-04 | 2023-04-25 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR102782008B1 (ko) * | 2019-12-06 | 2025-03-18 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US6258137B1 (en) * | 1992-02-05 | 2001-07-10 | Saint-Gobain Industrial Ceramics, Inc. | CMP products |
| KR100761636B1 (ko) * | 1996-09-30 | 2007-09-27 | 히다치 가세고교 가부시끼가이샤 | 산화세륨 입자 |
| DE19719503C2 (de) | 1997-05-07 | 2002-05-02 | Wolters Peter Werkzeugmasch | Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung |
| DE19755975A1 (de) | 1997-12-16 | 1999-06-17 | Wolters Peter Werkzeugmasch | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| EP1036836B1 (en) | 1999-03-18 | 2004-11-03 | Kabushiki Kaisha Toshiba | Aqueous dispersion for chemical mechanical polishing |
| JP2003503862A (ja) * | 1999-07-03 | 2003-01-28 | ロデール ホールディングス インコーポレイテッド | 改良された金属用化学機械研磨スラリー |
| US6582761B1 (en) | 1999-11-22 | 2003-06-24 | Jsr Corporation | Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing |
| JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Ｊｓｒ株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
| JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| DE10062496B4 (de) | 2000-12-14 | 2005-03-17 | Peter Wolters Cmp - Systeme Gmbh & Co. Kg | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| US20040065021A1 (en) * | 2002-10-04 | 2004-04-08 | Yasuhiro Yoneda | Polishing composition |
| JP4187206B2 (ja) * | 2002-10-04 | 2008-11-26 | 花王株式会社 | 研磨液組成物 |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2006041252A (ja) | 2004-07-28 | 2006-02-09 | Hitachi Chem Co Ltd | Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法 |
| US7207871B1 (en) | 2005-10-06 | 2007-04-24 | Applied Materials, Inc. | Carrier head with multiple chambers |
| KR100832993B1 (ko) * | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
| WO2009153162A1 (de) | 2008-06-17 | 2009-12-23 | Basf Se | Verfahren zur herstellung einer wässrigen polymerisatdispersion |
| KR101686255B1 (ko) | 2008-10-03 | 2016-12-13 | 바스프 에스이 | 향상된 성능의 화학적 기계적 연마(ｃｍｐ) 연마 용액 |
| WO2010127938A1 (en) | 2009-05-06 | 2010-11-11 | Basf Se | An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces |
| KR101793288B1 (ko) | 2009-05-06 | 2017-11-02 | 바스프 에스이 | 측쇄 작용기를 함유하는 중합체 연마재를 포함한 수성 금속 연마제 및 ｃｍｐ 공정에서 이의 용도 |
| WO2010128094A1 (en) | 2009-05-08 | 2010-11-11 | Basf Se | Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization |
| WO2010139603A1 (en) | 2009-06-05 | 2010-12-09 | Basf Se | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) |
-
2010
- 2010-11-10 CN CN201080050637.1A patent/CN102597142B/zh not_active Expired - Fee Related
- 2010-11-10 US US13/503,753 patent/US9255214B2/en not_active Expired - Fee Related
- 2010-11-10 SG SG10201407348PA patent/SG10201407348PA/en unknown
- 2010-11-10 RU RU2012123720/05A patent/RU2579597C2/ru not_active IP Right Cessation
- 2010-11-10 WO PCT/IB2010/055101 patent/WO2011058503A1/en not_active Ceased
- 2010-11-10 EP EP10829604.7A patent/EP2499210B1/en not_active Not-in-force
- 2010-11-10 MY MYPI2012001715A patent/MY161863A/en unknown
- 2010-11-10 KR KR1020127014055A patent/KR101809762B1/ko not_active Expired - Fee Related
- 2010-11-10 JP JP2012538454A patent/JP6005516B2/ja not_active Expired - Fee Related
- 2010-11-12 TW TW099138908A patent/TWI500722B/zh not_active IP Right Cessation
-
2012
- 2012-04-15 IL IL219144A patent/IL219144A/en not_active IP Right Cessation
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