JP2013511144A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013511144A5 JP2013511144A5 JP2012538454A JP2012538454A JP2013511144A5 JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5 JP 2012538454 A JP2012538454 A JP 2012538454A JP 2012538454 A JP2012538454 A JP 2012538454A JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5
- Authority
- JP
- Japan
- Prior art keywords
- cmp composition
- cmp
- particles
- polymer
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims 26
- 239000010954 inorganic particle Substances 0.000 claims 16
- 229920000642 polymer Polymers 0.000 claims 16
- 239000007788 liquid Substances 0.000 claims 8
- 238000005498 polishing Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 3
- 125000004663 dialkyl amino group Chemical group 0.000 claims 3
- 125000002883 imidazolyl group Chemical group 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 125000000524 functional group Chemical group 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26087309P | 2009-11-13 | 2009-11-13 | |
| US61/260,873 | 2009-11-13 | ||
| PCT/IB2010/055101 WO2011058503A1 (en) | 2009-11-13 | 2010-11-10 | A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511144A JP2013511144A (ja) | 2013-03-28 |
| JP2013511144A5 true JP2013511144A5 (enExample) | 2016-01-28 |
| JP6005516B2 JP6005516B2 (ja) | 2016-10-12 |
Family
ID=43991260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012538454A Expired - Fee Related JP6005516B2 (ja) | 2009-11-13 | 2010-11-10 | 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9255214B2 (enExample) |
| EP (1) | EP2499210B1 (enExample) |
| JP (1) | JP6005516B2 (enExample) |
| KR (1) | KR101809762B1 (enExample) |
| CN (1) | CN102597142B (enExample) |
| IL (1) | IL219144A (enExample) |
| MY (1) | MY161863A (enExample) |
| RU (1) | RU2579597C2 (enExample) |
| SG (1) | SG10201407348PA (enExample) |
| TW (1) | TWI500722B (enExample) |
| WO (1) | WO2011058503A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5574702B2 (ja) * | 2009-12-28 | 2014-08-20 | 日揮触媒化成株式会社 | 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法 |
| CN102782067B (zh) | 2010-02-24 | 2015-08-05 | 巴斯夫欧洲公司 | 含水抛光剂和接枝共聚物及其在抛光图案化和未结构化的金属表面的方法中的用途 |
| MY158489A (en) | 2010-10-07 | 2016-10-14 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| SG190334A1 (en) | 2010-12-10 | 2013-06-28 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| JP6125507B2 (ja) | 2011-09-07 | 2017-05-10 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | グリコシドを含む化学機械研磨（ｃｍｐ）組成物 |
| KR20140096352A (ko) | 2011-11-10 | 2014-08-05 | 바스프 에스이 | 산 단량체, 결합성 단량체 및 비이온성 단량체를 포함하는 종이 코팅 슬립 첨가제 |
| EP2682441A1 (en) * | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| JP6879202B2 (ja) * | 2015-03-10 | 2021-06-02 | 昭和電工マテリアルズ株式会社 | 研磨剤、研磨剤用貯蔵液及び研磨方法 |
| KR20170030143A (ko) | 2015-09-08 | 2017-03-17 | 삼성에스디아이 주식회사 | 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| KR102524807B1 (ko) | 2016-11-04 | 2023-04-25 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR102782008B1 (ko) * | 2019-12-06 | 2025-03-18 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US6258137B1 (en) * | 1992-02-05 | 2001-07-10 | Saint-Gobain Industrial Ceramics, Inc. | CMP products |
| RU2178599C2 (ru) * | 1996-09-30 | 2002-01-20 | Хитачи Кемикал Кампани, Лтд. | Абразив из оксида церия и способ полирования подложек |
| DE19719503C2 (de) | 1997-05-07 | 2002-05-02 | Wolters Peter Werkzeugmasch | Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung |
| DE19755975A1 (de) | 1997-12-16 | 1999-06-17 | Wolters Peter Werkzeugmasch | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| KR100447552B1 (ko) | 1999-03-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법 |
| WO2001002134A1 (en) * | 1999-07-03 | 2001-01-11 | Rodel Holdings, Inc. | Improved chemical mechanical polishing slurries for metal |
| DE60015479T2 (de) * | 1999-11-22 | 2005-10-27 | Jsr Corp. | Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren |
| JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Ｊｓｒ株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
| JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| DE10062496B4 (de) | 2000-12-14 | 2005-03-17 | Peter Wolters Cmp - Systeme Gmbh & Co. Kg | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| US20040065021A1 (en) * | 2002-10-04 | 2004-04-08 | Yasuhiro Yoneda | Polishing composition |
| JP4187206B2 (ja) * | 2002-10-04 | 2008-11-26 | 花王株式会社 | 研磨液組成物 |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2006041252A (ja) * | 2004-07-28 | 2006-02-09 | Hitachi Chem Co Ltd | Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法 |
| US7207871B1 (en) | 2005-10-06 | 2007-04-24 | Applied Materials, Inc. | Carrier head with multiple chambers |
| KR100832993B1 (ko) * | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
| EP2291413B1 (de) | 2008-06-17 | 2012-11-14 | Basf Se | Verfahren zur herstellung einer wässrigen polymerisatdispersion |
| US8597539B2 (en) | 2008-10-03 | 2013-12-03 | Basf Se | Chemical mechanical polishing (CMP) polishing solution with enhanced performance |
| US8679980B2 (en) | 2009-05-06 | 2014-03-25 | Basf Se | Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process |
| EP2427522B1 (en) | 2009-05-06 | 2017-03-01 | Basf Se | An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces |
| EP2427524B1 (en) | 2009-05-08 | 2013-07-17 | Basf Se | Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization |
| EP2438133B1 (en) | 2009-06-05 | 2018-07-11 | Basf Se | Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2 |
-
2010
- 2010-11-10 RU RU2012123720/05A patent/RU2579597C2/ru not_active IP Right Cessation
- 2010-11-10 KR KR1020127014055A patent/KR101809762B1/ko not_active Expired - Fee Related
- 2010-11-10 US US13/503,753 patent/US9255214B2/en not_active Expired - Fee Related
- 2010-11-10 MY MYPI2012001715A patent/MY161863A/en unknown
- 2010-11-10 JP JP2012538454A patent/JP6005516B2/ja not_active Expired - Fee Related
- 2010-11-10 EP EP10829604.7A patent/EP2499210B1/en not_active Not-in-force
- 2010-11-10 CN CN201080050637.1A patent/CN102597142B/zh not_active Expired - Fee Related
- 2010-11-10 SG SG10201407348PA patent/SG10201407348PA/en unknown
- 2010-11-10 WO PCT/IB2010/055101 patent/WO2011058503A1/en not_active Ceased
- 2010-11-12 TW TW099138908A patent/TWI500722B/zh not_active IP Right Cessation
-
2012
- 2012-04-15 IL IL219144A patent/IL219144A/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013511144A5 (enExample) | ||
| Abdullayev et al. | Enlargement of halloysite clay nanotube lumen by selective etching of aluminum oxide | |
| TW526250B (en) | Polishing abrasive and process for producing planar layers | |
| Wang et al. | Chemical effect on the material removal rate in the CMP of silicon wafers | |
| CN105236929B (zh) | 具有杀菌功能的SiO2气凝胶及其制备方法 | |
| RU2012123720A (ru) | Композиция для химико-механической полировки (хмп), содержащая неорганические частицы и полимерные частицы | |
| CN103803556B (zh) | 一种有机修饰的疏水纳米氧化硅空心球及其制备 | |
| JP2013040202A5 (enExample) | ||
| CN103285746B (zh) | 一种用于去除水中溶解性气体的超疏水膜的制备方法 | |
| JP2011014534A5 (enExample) | ||
| TW200914372A (en) | Silica particles and methods of making and using the same | |
| MY171840A (en) | Composition for polishing purposes,polishing method using same,and method for producing substrate | |
| JP2016138278A5 (enExample) | ||
| JP2012501252A5 (enExample) | ||
| TW201606065A (zh) | Cmp用研磨液及研磨方法 | |
| CN105802452A (zh) | 一种石墨烯复合涂层、石墨烯复合涂料及其制备方法 | |
| Chen et al. | Synergetic effect of organic cores and inorganic shells for core/shell structured composite abrasives for chemical mechanical planarization | |
| CN105329905B (zh) | 中空介孔二氧化硅纳米颗粒的制备方法 | |
| CN106277162A (zh) | 一种超疏水磁性PS/SiO2油水分离材料及其制备方法 | |
| CN109529523A (zh) | 分子筛核-介孔有机硅空心壳多级孔复合材料及其制备方法 | |
| JP2007324606A5 (enExample) | ||
| WO2014006526A3 (en) | Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt | |
| US8921229B2 (en) | Method of polishing copper wiring surfaces in ultra large scale integrated circuits | |
| KR101465762B1 (ko) | 폴리스티렌/실리카 복합체를 포함하는 연마재, 및 이의 제조 방법 | |
| Penta et al. | Charge density and pH effects on polycation adsorption on poly-Si, SiO2, and Si3N4 films and impact on removal during chemical mechanical polishing |