JP2013511144A5 - - Google Patents
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- Publication number
- JP2013511144A5 JP2013511144A5 JP2012538454A JP2012538454A JP2013511144A5 JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5 JP 2012538454 A JP2012538454 A JP 2012538454A JP 2012538454 A JP2012538454 A JP 2012538454A JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5
- Authority
- JP
- Japan
- Prior art keywords
- cmp composition
- cmp
- particles
- polymer
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims 26
- 239000010954 inorganic particle Substances 0.000 claims 16
- 229920000642 polymer Polymers 0.000 claims 16
- 239000007788 liquid Substances 0.000 claims 8
- 238000005498 polishing Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 3
- 125000004663 dialkyl amino group Chemical group 0.000 claims 3
- 125000002883 imidazolyl group Chemical group 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 125000000524 functional group Chemical group 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26087309P | 2009-11-13 | 2009-11-13 | |
| US61/260,873 | 2009-11-13 | ||
| PCT/IB2010/055101 WO2011058503A1 (en) | 2009-11-13 | 2010-11-10 | A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511144A JP2013511144A (ja) | 2013-03-28 |
| JP2013511144A5 true JP2013511144A5 (enExample) | 2016-01-28 |
| JP6005516B2 JP6005516B2 (ja) | 2016-10-12 |
Family
ID=43991260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012538454A Expired - Fee Related JP6005516B2 (ja) | 2009-11-13 | 2010-11-10 | 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9255214B2 (enExample) |
| EP (1) | EP2499210B1 (enExample) |
| JP (1) | JP6005516B2 (enExample) |
| KR (1) | KR101809762B1 (enExample) |
| CN (1) | CN102597142B (enExample) |
| IL (1) | IL219144A (enExample) |
| MY (1) | MY161863A (enExample) |
| RU (1) | RU2579597C2 (enExample) |
| SG (1) | SG10201407348PA (enExample) |
| TW (1) | TWI500722B (enExample) |
| WO (1) | WO2011058503A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5574702B2 (ja) * | 2009-12-28 | 2014-08-20 | 日揮触媒化成株式会社 | 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法 |
| KR101848519B1 (ko) | 2010-02-24 | 2018-04-12 | 바스프 에스이 | 수성 연마제 및 그라프트 공중합체 및 패턴화되고 비구조화된 금속 표면의 연마 방법에서 이들의 용도 |
| EP2625236B1 (en) | 2010-10-07 | 2017-12-13 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| SG190334A1 (en) | 2010-12-10 | 2013-06-28 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| EP2753670B1 (en) | 2011-09-07 | 2016-06-22 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a glycoside |
| EP2776518B1 (en) | 2011-11-10 | 2015-08-12 | Basf Se | Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer |
| EP2682441A1 (en) * | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| KR102583709B1 (ko) * | 2015-03-10 | 2023-09-26 | 가부시끼가이샤 레조낙 | 연마제, 연마제용 저장액 및 연마 방법 |
| KR20170030143A (ko) * | 2015-09-08 | 2017-03-17 | 삼성에스디아이 주식회사 | 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| KR102524807B1 (ko) | 2016-11-04 | 2023-04-25 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR102782008B1 (ko) * | 2019-12-06 | 2025-03-18 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US6258137B1 (en) * | 1992-02-05 | 2001-07-10 | Saint-Gobain Industrial Ceramics, Inc. | CMP products |
| EP1610367B1 (en) * | 1996-09-30 | 2010-03-17 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of polishing substrates |
| DE19719503C2 (de) | 1997-05-07 | 2002-05-02 | Wolters Peter Werkzeugmasch | Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung |
| DE19755975A1 (de) | 1997-12-16 | 1999-06-17 | Wolters Peter Werkzeugmasch | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| DE60015411T2 (de) | 1999-03-18 | 2005-10-27 | Kabushiki Kaisha Toshiba, Kawasaki | Wässerige Dispersionsaufschlämmung für chemisch-mechanisches Polierverfahren |
| US6447373B1 (en) | 1999-07-03 | 2002-09-10 | Rodel Holdings Inc. | Chemical mechanical polishing slurries for metal |
| JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Ｊｓｒ株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
| DE60025959T2 (de) | 1999-11-22 | 2006-10-19 | Jsr Corp. | Verbundpartikel und wässrige Dispersionen für chemisch-mechanisches Polieren |
| JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| DE10062496B4 (de) | 2000-12-14 | 2005-03-17 | Peter Wolters Cmp - Systeme Gmbh & Co. Kg | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| US20040065021A1 (en) * | 2002-10-04 | 2004-04-08 | Yasuhiro Yoneda | Polishing composition |
| JP4187206B2 (ja) * | 2002-10-04 | 2008-11-26 | 花王株式会社 | 研磨液組成物 |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2006041252A (ja) * | 2004-07-28 | 2006-02-09 | Hitachi Chem Co Ltd | Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法 |
| US7207871B1 (en) | 2005-10-06 | 2007-04-24 | Applied Materials, Inc. | Carrier head with multiple chambers |
| KR100832993B1 (ko) | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
| EP2291413B1 (de) | 2008-06-17 | 2012-11-14 | Basf Se | Verfahren zur herstellung einer wässrigen polymerisatdispersion |
| EP2334749B1 (en) | 2008-10-03 | 2012-08-29 | Basf Se | Chemical mechanical polishing (cmp) polishing solution with enhanced performance |
| WO2010127937A1 (en) | 2009-05-06 | 2010-11-11 | Basf Se | An aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a cmp process |
| WO2010127938A1 (en) | 2009-05-06 | 2010-11-11 | Basf Se | An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces |
| KR101701537B1 (ko) | 2009-05-08 | 2017-02-01 | 바스프 에스이 | 루테늄 비롯한 귀금속의 화학적 기계적 평탄화를 위한 산화 입자계 슬러리 |
| KR101760529B1 (ko) | 2009-06-05 | 2017-07-21 | 바스프 에스이 | 화학 기계적 평탄화(ＣＭＰ)를 위한 ＣｅＯ２ 나노입자 코팅된 라스베리형 금속 산화물 나노구조체 |
-
2010
- 2010-11-10 EP EP10829604.7A patent/EP2499210B1/en not_active Not-in-force
- 2010-11-10 JP JP2012538454A patent/JP6005516B2/ja not_active Expired - Fee Related
- 2010-11-10 WO PCT/IB2010/055101 patent/WO2011058503A1/en not_active Ceased
- 2010-11-10 CN CN201080050637.1A patent/CN102597142B/zh not_active Expired - Fee Related
- 2010-11-10 SG SG10201407348PA patent/SG10201407348PA/en unknown
- 2010-11-10 US US13/503,753 patent/US9255214B2/en not_active Expired - Fee Related
- 2010-11-10 MY MYPI2012001715A patent/MY161863A/en unknown
- 2010-11-10 KR KR1020127014055A patent/KR101809762B1/ko not_active Expired - Fee Related
- 2010-11-10 RU RU2012123720/05A patent/RU2579597C2/ru not_active IP Right Cessation
- 2010-11-12 TW TW099138908A patent/TWI500722B/zh not_active IP Right Cessation
-
2012
- 2012-04-15 IL IL219144A patent/IL219144A/en not_active IP Right Cessation
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