JP6005516B2 - 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 - Google Patents

無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 Download PDF

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Publication number
JP6005516B2
JP6005516B2 JP2012538454A JP2012538454A JP6005516B2 JP 6005516 B2 JP6005516 B2 JP 6005516B2 JP 2012538454 A JP2012538454 A JP 2012538454A JP 2012538454 A JP2012538454 A JP 2012538454A JP 6005516 B2 JP6005516 B2 JP 6005516B2
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Japan
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cmp composition
cmp
particles
polymer
polymer particles
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JP2012538454A
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JP2013511144A5 (enExample
JP2013511144A (ja
Inventor
ラウター，ミヒャエル
イマヌエル ラマン，ビヤイ
イマヌエル ラマン，ビヤイ
リー，ユイチュオ
スンダル ベンカタラマン，シャム
スンダル ベンカタラマン，シャム
クウォ−フン シェン，ダニエル
クウォ−フン シェン，ダニエル
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2012538454A 2009-11-13 2010-11-10 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 Expired - Fee Related JP6005516B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13
US61/260,873 2009-11-13
PCT/IB2010/055101 WO2011058503A1 (en) 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Publications (3)

Publication Number Publication Date
JP2013511144A JP2013511144A (ja) 2013-03-28
JP2013511144A5 JP2013511144A5 (enExample) 2016-01-28
JP6005516B2 true JP6005516B2 (ja) 2016-10-12

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JP2012538454A Expired - Fee Related JP6005516B2 (ja) 2009-11-13 2010-11-10 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物

Country Status (11)

Country Link
US (1) US9255214B2 (enExample)
EP (1) EP2499210B1 (enExample)
JP (1) JP6005516B2 (enExample)
KR (1) KR101809762B1 (enExample)
CN (1) CN102597142B (enExample)
IL (1) IL219144A (enExample)
MY (1) MY161863A (enExample)
RU (1) RU2579597C2 (enExample)
SG (1) SG10201407348PA (enExample)
TW (1) TWI500722B (enExample)
WO (1) WO2011058503A1 (enExample)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
JP6004943B2 (ja) 2010-02-24 2016-10-12 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨剤及びグラフトコポリマー並びにそれらをパターン形成された及び構造化されていない金属表面の研磨プロセスに用いる使用
EP2625236B1 (en) 2010-10-07 2017-12-13 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
RU2588620C2 (ru) 2010-12-10 2016-07-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния
EP2753670B1 (en) 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
ES2545857T3 (es) 2011-11-10 2015-09-16 Basf Se Aditivo de baño de estucado de papel que comprende monómero de ácido, monómero asociativo y monómero no iónico
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US10946494B2 (en) 2015-03-10 2021-03-16 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
KR20170030143A (ko) * 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

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US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US6258137B1 (en) * 1992-02-05 2001-07-10 Saint-Gobain Industrial Ceramics, Inc. CMP products
KR100761636B1 (ko) * 1996-09-30 2007-09-27 히다치 가세고교 가부시끼가이샤 산화세륨 입자
DE19719503C2 (de) 1997-05-07 2002-05-02 Wolters Peter Werkzeugmasch Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung
DE19755975A1 (de) 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Halter für flache Werkstücke, insbesondere Halbleiterwafer
EP1036836B1 (en) 1999-03-18 2004-11-03 Kabushiki Kaisha Toshiba Aqueous dispersion for chemical mechanical polishing
JP2003503862A (ja) * 1999-07-03 2003-01-28 ロデール ホールディングス インコーポレイテッド 改良された金属用化学機械研磨スラリー
US6582761B1 (en) 1999-11-22 2003-06-24 Jsr Corporation Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing
JP4151179B2 (ja) * 1999-11-22 2008-09-17 Ｊｓｒ株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
JP4123685B2 (ja) * 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
DE10062496B4 (de) 2000-12-14 2005-03-17 Peter Wolters Cmp - Systeme Gmbh & Co. Kg Halter für flache Werkstücke, insbesondere Halbleiterwafer
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition
JP4187206B2 (ja) * 2002-10-04 2008-11-26 花王株式会社 研磨液組成物
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2006041252A (ja) 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法
US7207871B1 (en) 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Ｃｍｐ 슬러리용 보조제
WO2009153162A1 (de) 2008-06-17 2009-12-23 Basf Se Verfahren zur herstellung einer wässrigen polymerisatdispersion
KR101686255B1 (ko) 2008-10-03 2016-12-13 바스프 에스이 향상된 성능의 화학적 기계적 연마(ｃｍｐ) 연마 용액
WO2010127938A1 (en) 2009-05-06 2010-11-11 Basf Se An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
KR101793288B1 (ko) 2009-05-06 2017-11-02 바스프 에스이 측쇄 작용기를 함유하는 중합체 연마재를 포함한 수성 금속 연마제 및 ｃｍｐ 공정에서 이의 용도
WO2010128094A1 (en) 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
WO2010139603A1 (en) 2009-06-05 2010-12-09 Basf Se RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)

Also Published As

Publication number Publication date
US20120208344A1 (en) 2012-08-16
IL219144A (en) 2016-07-31
RU2579597C2 (ru) 2016-04-10
WO2011058503A1 (en) 2011-05-19
SG10201407348PA (en) 2015-01-29
IL219144A0 (en) 2012-06-28
US9255214B2 (en) 2016-02-09
TW201122068A (en) 2011-07-01
EP2499210A4 (en) 2015-04-29
EP2499210A1 (en) 2012-09-19
KR20120101044A (ko) 2012-09-12
RU2012123720A (ru) 2013-12-20
TWI500722B (zh) 2015-09-21
MY161863A (en) 2017-05-15
JP2013511144A (ja) 2013-03-28
KR101809762B1 (ko) 2017-12-15
CN102597142B (zh) 2014-09-17
CN102597142A (zh) 2012-07-18
EP2499210B1 (en) 2017-01-11

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