TWI500722B - 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物 - Google Patents

包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物 Download PDF

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Publication number
TWI500722B
TWI500722B TW099138908A TW99138908A TWI500722B TW I500722 B TWI500722 B TW I500722B TW 099138908 A TW099138908 A TW 099138908A TW 99138908 A TW99138908 A TW 99138908A TW I500722 B TWI500722 B TW I500722B
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TW
Taiwan
Prior art keywords
cmp
cmp composition
polymer particles
particles
liquid medium
Prior art date
Application number
TW099138908A
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English (en)
Chinese (zh)
Other versions
TW201122068A (en
Inventor
米夏埃爾 勞特
維傑 伊曼紐 拉曼
李玉琢
徐安 桑達 帆卡塔拉曼
沈國宏
Original Assignee
巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201122068A publication Critical patent/TW201122068A/zh
Application granted granted Critical
Publication of TWI500722B publication Critical patent/TWI500722B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW099138908A 2009-11-13 2010-11-12 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物 TWI500722B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13

Publications (2)

Publication Number Publication Date
TW201122068A TW201122068A (en) 2011-07-01
TWI500722B true TWI500722B (zh) 2015-09-21

Family

ID=43991260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099138908A TWI500722B (zh) 2009-11-13 2010-11-12 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物

Country Status (11)

Country Link
US (1) US9255214B2 (enExample)
EP (1) EP2499210B1 (enExample)
JP (1) JP6005516B2 (enExample)
KR (1) KR101809762B1 (enExample)
CN (1) CN102597142B (enExample)
IL (1) IL219144A (enExample)
MY (1) MY161863A (enExample)
RU (1) RU2579597C2 (enExample)
SG (1) SG10201407348PA (enExample)
TW (1) TWI500722B (enExample)
WO (1) WO2011058503A1 (enExample)

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JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
JP6004943B2 (ja) 2010-02-24 2016-10-12 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨剤及びグラフトコポリマー並びにそれらをパターン形成された及び構造化されていない金属表面の研磨プロセスに用いる使用
EP2625236B1 (en) 2010-10-07 2017-12-13 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
RU2588620C2 (ru) 2010-12-10 2016-07-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния
EP2753670B1 (en) 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
ES2545857T3 (es) 2011-11-10 2015-09-16 Basf Se Aditivo de baño de estucado de papel que comprende monómero de ácido, monómero asociativo y monómero no iónico
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US10946494B2 (en) 2015-03-10 2021-03-16 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
KR20170030143A (ko) * 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

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JP2006041252A (ja) * 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法
CN101415525A (zh) * 2006-04-14 2009-04-22 Lg化学株式会社 Cmp浆料的辅助剂

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KR100761636B1 (ko) * 1996-09-30 2007-09-27 히다치 가세고교 가부시끼가이샤 산화세륨 입자
DE19719503C2 (de) 1997-05-07 2002-05-02 Wolters Peter Werkzeugmasch Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung
DE19755975A1 (de) 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Halter für flache Werkstücke, insbesondere Halbleiterwafer
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JP2003503862A (ja) * 1999-07-03 2003-01-28 ロデール ホールディングス インコーポレイテッド 改良された金属用化学機械研磨スラリー
US6582761B1 (en) 1999-11-22 2003-06-24 Jsr Corporation Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing
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US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
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WO2010127938A1 (en) 2009-05-06 2010-11-11 Basf Se An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
KR101793288B1 (ko) 2009-05-06 2017-11-02 바스프 에스이 측쇄 작용기를 함유하는 중합체 연마재를 포함한 수성 금속 연마제 및 ｃｍｐ 공정에서 이의 용도
WO2010128094A1 (en) 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
WO2010139603A1 (en) 2009-06-05 2010-12-09 Basf Se RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2006041252A (ja) * 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法
CN101415525A (zh) * 2006-04-14 2009-04-22 Lg化学株式会社 Cmp浆料的辅助剂

Also Published As

Publication number Publication date
US20120208344A1 (en) 2012-08-16
IL219144A (en) 2016-07-31
RU2579597C2 (ru) 2016-04-10
WO2011058503A1 (en) 2011-05-19
SG10201407348PA (en) 2015-01-29
IL219144A0 (en) 2012-06-28
US9255214B2 (en) 2016-02-09
TW201122068A (en) 2011-07-01
EP2499210A4 (en) 2015-04-29
EP2499210A1 (en) 2012-09-19
KR20120101044A (ko) 2012-09-12
RU2012123720A (ru) 2013-12-20
MY161863A (en) 2017-05-15
JP2013511144A (ja) 2013-03-28
KR101809762B1 (ko) 2017-12-15
CN102597142B (zh) 2014-09-17
JP6005516B2 (ja) 2016-10-12
CN102597142A (zh) 2012-07-18
EP2499210B1 (en) 2017-01-11

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