SG10201407348PA - A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles - Google Patents

A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Info

Publication number
SG10201407348PA
SG10201407348PA SG10201407348PA SG10201407348PA SG10201407348PA SG 10201407348P A SG10201407348P A SG 10201407348PA SG 10201407348P A SG10201407348P A SG 10201407348PA SG 10201407348P A SG10201407348P A SG 10201407348PA SG 10201407348P A SG10201407348P A SG 10201407348PA
Authority
SG
Singapore
Prior art keywords
cmp
composition
mechanical polishing
chemical mechanical
particles
Prior art date
Application number
SG10201407348PA
Other languages
English (en)
Inventor
Michael Lauter
Vijay Immanuel Raman
Yuzhuo Li
Shyam Sundar Venkataraman
Daniel Kwo-Hung Shen
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG10201407348PA publication Critical patent/SG10201407348PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201407348PA 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles SG10201407348PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13

Publications (1)

Publication Number Publication Date
SG10201407348PA true SG10201407348PA (en) 2015-01-29

Family

ID=43991260

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201407348PA SG10201407348PA (en) 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Country Status (11)

Country Link
US (1) US9255214B2 (enExample)
EP (1) EP2499210B1 (enExample)
JP (1) JP6005516B2 (enExample)
KR (1) KR101809762B1 (enExample)
CN (1) CN102597142B (enExample)
IL (1) IL219144A (enExample)
MY (1) MY161863A (enExample)
RU (1) RU2579597C2 (enExample)
SG (1) SG10201407348PA (enExample)
TW (1) TWI500722B (enExample)
WO (1) WO2011058503A1 (enExample)

Families Citing this family (12)

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JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
CN102782067B (zh) 2010-02-24 2015-08-05 巴斯夫欧洲公司 含水抛光剂和接枝共聚物及其在抛光图案化和未结构化的金属表面的方法中的用途
US9070632B2 (en) 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
KR101919750B1 (ko) 2010-12-10 2018-11-19 바스프 에스이 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마를 위한 수성 연마 조성물 및 방법
JP6125507B2 (ja) 2011-09-07 2017-05-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ グリコシドを含む化学機械研磨（ｃｍｐ）組成物
US9328247B2 (en) 2011-11-10 2016-05-03 Basf Se Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
WO2016143797A1 (ja) 2015-03-10 2016-09-15 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
KR20170030143A (ko) * 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

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US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US6258137B1 (en) * 1992-02-05 2001-07-10 Saint-Gobain Industrial Ceramics, Inc. CMP products
CN1323124C (zh) * 1996-09-30 2007-06-27 日立化成工业株式会社 氧化铈研磨剂以及基板的研磨方法
DE19719503C2 (de) 1997-05-07 2002-05-02 Wolters Peter Werkzeugmasch Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung
DE19755975A1 (de) 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Halter für flache Werkstücke, insbesondere Halbleiterwafer
KR100447552B1 (ko) 1999-03-18 2004-09-08 가부시끼가이샤 도시바 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법
EP1177068A4 (en) * 1999-07-03 2004-06-16 Rodel Inc Improved chemical mechanical polishing slurries for metal
JP4151179B2 (ja) * 1999-11-22 2008-09-17 Ｊｓｒ株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
DE60025959T2 (de) * 1999-11-22 2006-10-19 Jsr Corp. Verbundpartikel und wässrige Dispersionen für chemisch-mechanisches Polieren
JP4123685B2 (ja) 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
DE10062496B4 (de) 2000-12-14 2005-03-17 Peter Wolters Cmp - Systeme Gmbh & Co. Kg Halter für flache Werkstücke, insbesondere Halbleiterwafer
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition
JP4187206B2 (ja) * 2002-10-04 2008-11-26 花王株式会社 研磨液組成物
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2006041252A (ja) * 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法
US7207871B1 (en) 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
KR100832993B1 (ko) 2006-04-14 2008-05-27 주식회사 엘지화학 Ｃｍｐ 슬러리용 보조제
US8912273B2 (en) 2008-06-17 2014-12-16 Basf Se Process for the preparation of an aqueous polymer dispersion
KR101686255B1 (ko) 2008-10-03 2016-12-13 바스프 에스이 향상된 성능의 화학적 기계적 연마(ｃｍｐ) 연마 용액
KR101793288B1 (ko) 2009-05-06 2017-11-02 바스프 에스이 측쇄 작용기를 함유하는 중합체 연마재를 포함한 수성 금속 연마제 및 ｃｍｐ 공정에서 이의 용도
US8747687B2 (en) 2009-05-06 2014-06-10 Basf Se Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
US8684793B2 (en) 2009-05-08 2014-04-01 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
US20120077419A1 (en) 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)

Also Published As

Publication number Publication date
EP2499210A4 (en) 2015-04-29
EP2499210B1 (en) 2017-01-11
RU2579597C2 (ru) 2016-04-10
CN102597142B (zh) 2014-09-17
RU2012123720A (ru) 2013-12-20
KR101809762B1 (ko) 2017-12-15
US20120208344A1 (en) 2012-08-16
EP2499210A1 (en) 2012-09-19
TW201122068A (en) 2011-07-01
TWI500722B (zh) 2015-09-21
CN102597142A (zh) 2012-07-18
JP6005516B2 (ja) 2016-10-12
KR20120101044A (ko) 2012-09-12
WO2011058503A1 (en) 2011-05-19
MY161863A (en) 2017-05-15
JP2013511144A (ja) 2013-03-28
IL219144A (en) 2016-07-31
US9255214B2 (en) 2016-02-09
IL219144A0 (en) 2012-06-28

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