JP2013505561A - 光電モジュール - Google Patents
光電モジュール Download PDFInfo
- Publication number
- JP2013505561A JP2013505561A JP2012529207A JP2012529207A JP2013505561A JP 2013505561 A JP2013505561 A JP 2013505561A JP 2012529207 A JP2012529207 A JP 2012529207A JP 2012529207 A JP2012529207 A JP 2012529207A JP 2013505561 A JP2013505561 A JP 2013505561A
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- JP
- Japan
- Prior art keywords
- insulating layer
- photoelectric module
- semiconductor chip
- support
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 93
- 239000002184 metal Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (12)
- ・少なくとも1つの接点個所(1A)を備える支持体(1)と、
・第1の接点面(2A)と第2の接点面(2B)とを有する発光半導体チップ(2)と、
・第1の切欠部(4A)と第2の切欠部(4B)とを備える絶縁層(4)と、
・少なくとも1つの導電性導体路構造体(8)と、
を有する光電モジュール(100)であって、
・前記第1の接点面(2A)は、前記発光半導体チップ(2)の支持体(1)とは反対の側に配置されており、
・前記絶縁層(4)は少なくとも部分的に支持体(1)および半導体チップ(2)の上に取り付けられており、前記第1の切欠部(4A)を前記第1の接点面(2A)の領域に有し、かつ前記第2の切欠部(4B)を前記接点個所(1A)の領域に有し、
・前記導電性導体路構造体(8)は前記絶縁層(4)の上に配置されており、前記第1の接点面(2A)は前記支持体(1)の前記接点個所(1A)と電気的に接触接続しており、
・前記絶縁層(4)は、主にセラミック材料から形成されている光電モジュール(100)。 - 少なくとも2つの発光半導体チップ(2)を有し、前記絶縁層(4)は当該少なくとも2つの発光半導体チップ(2)の間に部分的に配置されている、請求項1に記載の光電モジュール(100)。
- 前記絶縁層(4)は、前記切欠部(4A、4B)を除いて、光電モジュール(100)の露出した外面に形状結合して取り付けられている、請求項1または2に記載の光電モジュール(100)。
- 前記絶縁層(4)は光透過性であり、前記半導体チップ(2)の光線出射面(3)を部分的に覆っている、請求項1から3までのいずれか1項に記載の光電モジュール(100)。
- 前記絶縁層(4)はセラミック発光物質からなる、請求項1から4までのいずれか1項に記載の光電モジュール(100)。
- 前記絶縁層(4)内にある第1の切欠部(4A)は、前記半導体チップ(2)の光線出射面(3)と前記支持体(1)との間を半導体チップ(2)の側面(9)に沿って連続して延在しており、前記第1の接点面(2A)と前記支持体(1)によって側方が制限されている、請求項1から5までのいずれか1項に記載の光電モジュール(100)。
- 前記絶縁層(4)内にある第1の切欠部(4A)は、隣接する複数の半導体チップ(2)の間に連続して延在しており、前記接点面(2A)によって側方が制限されている、請求項1から6までのいずれか1項に記載の光電モジュール(100)。
- 複数の半導体チップ(2)の間にはアイソレーション層(5)が配置されている、請求項1から7までのいずれか1項に記載の光電モジュール(100)。
- 前記絶縁層(4)はシートである、請求項1から8までのいずれか1項に記載の光電モジュール(100)。
- 前記絶縁層(4)はラミネートプロセスによって取り付けられている、請求項9に記載の光電モジュール(100)。
- 前記絶縁層(4)は焼成プロセスによって取り付けられている、請求項1から8までのいずれか1項に記載の光電モジュール(100)。
- 前記絶縁層(4)はモールドプロセスによって取り付けられている、請求項1から8までのいずれか1項に記載の光電モジュール(100)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009042205A DE102009042205A1 (de) | 2009-09-18 | 2009-09-18 | Optoelektronisches Modul |
DE102009042205.6 | 2009-09-18 | ||
PCT/EP2010/063035 WO2011032853A1 (de) | 2009-09-18 | 2010-09-06 | Optoelektronisches modul |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013505561A true JP2013505561A (ja) | 2013-02-14 |
JP2013505561A5 JP2013505561A5 (ja) | 2013-07-11 |
Family
ID=43333046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012529207A Pending JP2013505561A (ja) | 2009-09-18 | 2010-09-06 | 光電モジュール |
Country Status (8)
Country | Link |
---|---|
US (1) | US20120228666A1 (ja) |
EP (1) | EP2478557A1 (ja) |
JP (1) | JP2013505561A (ja) |
KR (1) | KR20120080608A (ja) |
CN (1) | CN102576707A (ja) |
DE (1) | DE102009042205A1 (ja) |
TW (1) | TW201117439A (ja) |
WO (1) | WO2011032853A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019509631A (ja) * | 2016-02-24 | 2019-04-04 | マジック リープ, インコーポレイテッドMagic Leap,Inc. | 光エミッタのための薄型相互接続子 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011016935A1 (de) * | 2011-04-13 | 2012-10-18 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement |
DE102011079708B4 (de) | 2011-07-25 | 2022-08-11 | Osram Gmbh | Trägervorrichtung, elektrische vorrichtung mit einer trägervorrichtung und verfahren zur herstellung dieser |
DE102012101889A1 (de) | 2012-03-06 | 2013-09-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102012108160A1 (de) * | 2012-09-03 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
CN106716003B (zh) * | 2014-09-02 | 2020-03-10 | 飞利浦照明控股有限公司 | 将照明布置应用于表面的方法和照明表面 |
DE102015104886A1 (de) * | 2015-03-30 | 2016-10-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
DE102019219016A1 (de) * | 2019-12-05 | 2021-06-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung und verfahren zur herstellung einer optoelektronischen vorrichtung |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0518839U (ja) * | 1991-08-30 | 1993-03-09 | シヤープ株式会社 | 発光装置 |
JP2008515208A (ja) * | 2004-09-30 | 2008-05-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ワイヤレス式のコンタクトを有するオプトエレクトロニクス素子 |
JP2008244357A (ja) * | 2007-03-28 | 2008-10-09 | Toshiba Corp | 半導体発光装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10308866A1 (de) * | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
DE10353679A1 (de) * | 2003-11-17 | 2005-06-02 | Siemens Ag | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US20060154393A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Systems and methods for removing operating heat from a light emitting diode |
KR20080048492A (ko) * | 2005-08-24 | 2008-06-02 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 컬러 변환기를 갖는 발광 다이오드 및 레이저 다이오드 |
DE102005041099A1 (de) * | 2005-08-30 | 2007-03-29 | Osram Opto Semiconductors Gmbh | LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik |
JP2007158262A (ja) * | 2005-12-08 | 2007-06-21 | Rohm Co Ltd | 半導体発光素子の製造方法 |
US20070241661A1 (en) * | 2006-04-12 | 2007-10-18 | Yin Chua B | High light output lamps having a phosphor embedded glass/ceramic layer |
DE102007021009A1 (de) * | 2006-09-27 | 2008-04-10 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
DE102007011123A1 (de) * | 2007-03-07 | 2008-09-11 | Osram Opto Semiconductors Gmbh | Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul |
DE102007046337A1 (de) * | 2007-09-27 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
DE102008019902A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement |
-
2009
- 2009-09-18 DE DE102009042205A patent/DE102009042205A1/de not_active Withdrawn
-
2010
- 2010-09-06 CN CN2010800416619A patent/CN102576707A/zh active Pending
- 2010-09-06 EP EP10752334A patent/EP2478557A1/de not_active Withdrawn
- 2010-09-06 KR KR1020127009750A patent/KR20120080608A/ko not_active Application Discontinuation
- 2010-09-06 US US13/496,805 patent/US20120228666A1/en not_active Abandoned
- 2010-09-06 WO PCT/EP2010/063035 patent/WO2011032853A1/de active Application Filing
- 2010-09-06 JP JP2012529207A patent/JP2013505561A/ja active Pending
- 2010-09-09 TW TW099130463A patent/TW201117439A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0518839U (ja) * | 1991-08-30 | 1993-03-09 | シヤープ株式会社 | 発光装置 |
JP2008515208A (ja) * | 2004-09-30 | 2008-05-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ワイヤレス式のコンタクトを有するオプトエレクトロニクス素子 |
JP2008244357A (ja) * | 2007-03-28 | 2008-10-09 | Toshiba Corp | 半導体発光装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019509631A (ja) * | 2016-02-24 | 2019-04-04 | マジック リープ, インコーポレイテッドMagic Leap,Inc. | 光エミッタのための薄型相互接続子 |
JP6991981B2 (ja) | 2016-02-24 | 2022-01-13 | マジック リープ, インコーポレイテッド | 光エミッタのための薄型相互接続子 |
JP2022033155A (ja) * | 2016-02-24 | 2022-02-28 | マジック リープ, インコーポレイテッド | 光エミッタのための薄型相互接続子 |
JP7301116B2 (ja) | 2016-02-24 | 2023-06-30 | マジック リープ, インコーポレイテッド | 光エミッタのための薄型相互接続子 |
US11811011B2 (en) | 2016-02-24 | 2023-11-07 | Magic Leap, Inc. | Low profile interconnect for light emitter |
Also Published As
Publication number | Publication date |
---|---|
WO2011032853A1 (de) | 2011-03-24 |
DE102009042205A1 (de) | 2011-03-31 |
TW201117439A (en) | 2011-05-16 |
EP2478557A1 (de) | 2012-07-25 |
CN102576707A (zh) | 2012-07-11 |
KR20120080608A (ko) | 2012-07-17 |
US20120228666A1 (en) | 2012-09-13 |
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