JP5670571B2 - 少なくとも1つのオプトエレクトロニクス半導体部品の製造方法 - Google Patents
少なくとも1つのオプトエレクトロニクス半導体部品の製造方法 Download PDFInfo
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Description
Claims (11)
- 少なくとも1つのオプトエレクトロニクス半導体部品(100)を製造する方法であって、
a)キャリア(1)を形成するステップであって、前記キャリア(1)が、上面(12)と、前記キャリア(1)の前記上面(12)とは反対側に位置する下面(11)と、前記上面(12)に横方向(L)に互いに並んで配置される複数の接続領域(13)とを有する、前記ステップと、
b)前記キャリア(1)の前記上面(12)に、横方向(L)に互いに隔てて配置される複数のオプトエレクトロニクス部品(2)を貼り付けるステップであって、前記オプトエレクトロニクス部品(2)それぞれが、前記キャリア(1)とは反対側に少なくとも1つのコンタクト領域(22)を有する、前記ステップと、
c)前記コンタクト領域(22)と前記接続領域(13)とに、半導体材料若しくはセラミック材料又はこれらの材料のうちの少なくとも1つを含む保護要素(41,42)を形成するステップであって、前記保護要素(41,42)の少なくとも一方の横方向範囲(45)が、前記キャリア(1)とは反対側の前記保護要素(41,42)の面から前記キャリア(1)の前記下面(11)の方向に減少している、ステップと、
d)前記キャリア(1)の露出した領域と、前記コンタクト領域(22)の露出した領域と、前記保護要素(41,42)の露出した領域とに、少なくとも1層の電気的絶縁層(3)を形成するステップと、
e)前記保護要素(41,42)を除去するステップであって、その結果として前記電気的絶縁層(3)に開口部(5)が形成される、前記ステップと、
f)前記電気的絶縁層(3)の上と、前記開口部(5)の少なくとも一部分とに、導電性材料(8)を配置するステップであって、前記導電性材料(8)それぞれが、前記コンタクト領域(22)を、前記コンタクト領域(22)に割り当てられている前記接続領域(13)に導電接続する、前記ステップと、
を含んでいる、方法。 - ステップd)の前に、前記キャリア(1)の前記上面(12)における保護要素(43)が、分離線(S)に沿って前記キャリア(1)に形成される、
請求項1に記載の方法。 - 前記保護要素(43)を除去した後、前記キャリア(1)が、前記分離線(S)に沿って、個々のオプトエレクトロニクス半導体部品(100)に個片化される、
請求項2に記載の方法。 - 前記電気的絶縁層(3)が、放射に対して反射性である、または、放射に対して吸収性である、
請求項1に記載の方法。 - 前記電気的絶縁層(3)が、ポッティング工程によって形成されるポッティング体(33)である、
請求項1から請求項4のいずれかに記載の方法。 - 前記保護要素(41,42)の少なくとも1つが、
噴射、積層、ディスペンシング、スクリーン印刷、射出、
のうちの少なくとも1種類の工程によって形成される、
請求項1から請求項5のいずれかに記載の方法。 - 前記保護要素(41,42)が、垂直方向(V)において前記電気的絶縁層(3)と同じ高さにある、
請求項1から請求項6のいずれかに記載の方法。 - ステップd)の前に、オプトエレクトロニクス部品(2)の放射通過領域(21)に、少なくとも1つの変換要素(9)が形成される、
請求項1から請求項7のいずれかに記載の方法。 - ステップd)の前に、オプトエレクトロニクス部品(2)の放射通過領域(21)に保護層(44)が形成され、前記保護層(44)が、前記放射通過領域(21)の少なくとも一部分を覆っており、ステップd)の後に、前記保護層(44)が除去され、その結果として、前記電気的絶縁層(3)に窓部(31)が形成される、
請求項1から請求項7のいずれかに記載の方法。 - 前記保護層(44)が、前記保護要素(41,42)と同じ材料によって形成されている、
請求項9に記載の方法。 - 前記窓部(31)に、少なくとも1つの変換要素(9)もしくはさらなるポッティング体(32)またはその両方が配置され、前記さらなるポッティング体(32)が、少なくとも1種類のルミネセンス変換材料を含んでいる、
請求項9に記載の方法。
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DE201010034565 DE102010034565A1 (de) | 2010-08-17 | 2010-08-17 | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements |
DE102010034565.2 | 2010-08-17 | ||
PCT/EP2011/063987 WO2012022695A1 (de) | 2010-08-17 | 2011-08-12 | Verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements |
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US (1) | US9105771B2 (ja) |
EP (1) | EP2606510B1 (ja) |
JP (1) | JP5670571B2 (ja) |
KR (1) | KR101786526B1 (ja) |
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DE102010044560A1 (de) | 2010-09-07 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102012102420B4 (de) | 2012-03-21 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102012103198B4 (de) | 2012-04-13 | 2019-02-21 | Vossloh-Schwabe Deutschland Gmbh | Trägereinrichtung für ein Leuchtmodul und Verfahren zu deren Herstellung |
DE102012215524A1 (de) | 2012-08-31 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
DE102013205179A1 (de) * | 2013-03-25 | 2014-09-25 | Osram Gmbh | Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe |
DE102014114188B4 (de) * | 2014-09-30 | 2022-01-20 | Osram Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102014116079A1 (de) * | 2014-11-04 | 2016-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102015107742A1 (de) | 2015-05-18 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
DE102016118990A1 (de) | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Sensor |
DE102016118996A1 (de) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Herstellung von sensoren |
DE102018103431A1 (de) | 2018-02-15 | 2019-08-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Verbindung zwischen Bauteilen und Bauelement aus Bauteilen |
CN109638033A (zh) * | 2018-11-27 | 2019-04-16 | 合肥彩虹蓝光科技有限公司 | 一种发光二极管基板及其制造方法 |
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US6934065B2 (en) * | 2003-09-18 | 2005-08-23 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
US7329905B2 (en) | 2004-06-30 | 2008-02-12 | Cree, Inc. | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
KR101047683B1 (ko) * | 2005-05-17 | 2011-07-08 | 엘지이노텍 주식회사 | 와이어 본딩이 불필요한 발광소자 패키징 방법 |
US7732233B2 (en) | 2006-07-24 | 2010-06-08 | Touch Micro-System Technology Corp. | Method for making light emitting diode chip package |
DE102007029369A1 (de) | 2007-06-26 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
JP5151301B2 (ja) * | 2007-08-06 | 2013-02-27 | 日亜化学工業株式会社 | 半導体発光素子及びその製造方法 |
DE102007046337A1 (de) * | 2007-09-27 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
JP5558665B2 (ja) | 2007-11-27 | 2014-07-23 | パナソニック株式会社 | 発光装置 |
TW200929601A (en) * | 2007-12-26 | 2009-07-01 | Epistar Corp | Semiconductor device |
US7928655B2 (en) | 2008-11-10 | 2011-04-19 | Visera Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
DE102010031732A1 (de) * | 2010-07-21 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102010033963A1 (de) * | 2010-08-11 | 2012-02-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
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US20130214323A1 (en) | 2013-08-22 |
CN103069563A (zh) | 2013-04-24 |
KR101786526B1 (ko) | 2017-10-18 |
CN103069563B (zh) | 2015-06-03 |
US9105771B2 (en) | 2015-08-11 |
DE102010034565A1 (de) | 2012-02-23 |
KR20130079501A (ko) | 2013-07-10 |
EP2606510B1 (de) | 2017-05-03 |
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