JP2013500394A5 - - Google Patents

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Publication number
JP2013500394A5
JP2013500394A5 JP2012522093A JP2012522093A JP2013500394A5 JP 2013500394 A5 JP2013500394 A5 JP 2013500394A5 JP 2012522093 A JP2012522093 A JP 2012522093A JP 2012522093 A JP2012522093 A JP 2012522093A JP 2013500394 A5 JP2013500394 A5 JP 2013500394A5
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JP
Japan
Prior art keywords
composition according
condensate
composition
polyalcohol
substrate
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JP2012522093A
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English (en)
Japanese (ja)
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JP5714581B2 (ja
JP2013500394A (ja
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Priority claimed from PCT/EP2010/060276 external-priority patent/WO2011012462A2/en
Publication of JP2013500394A publication Critical patent/JP2013500394A/ja
Publication of JP2013500394A5 publication Critical patent/JP2013500394A5/ja
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Publication of JP5714581B2 publication Critical patent/JP5714581B2/ja
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JP2012522093A 2009-07-30 2010-07-16 マイクロメーター以下の機構をボイドを形成することなく満たすための抑制剤を含む金属メッキ用組成物 Active JP5714581B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
US61/229,803 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2013500394A JP2013500394A (ja) 2013-01-07
JP2013500394A5 true JP2013500394A5 (enExample) 2013-08-29
JP5714581B2 JP5714581B2 (ja) 2015-05-07

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ID=43425023

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JP2012522093A Active JP5714581B2 (ja) 2009-07-30 2010-07-16 マイクロメーター以下の機構をボイドを形成することなく満たすための抑制剤を含む金属メッキ用組成物

Country Status (11)

Country Link
US (1) US9869029B2 (enExample)
EP (1) EP2459778B1 (enExample)
JP (1) JP5714581B2 (enExample)
KR (1) KR101752018B1 (enExample)
CN (1) CN102597329B (enExample)
IL (1) IL217536A (enExample)
MY (1) MY157126A (enExample)
RU (1) RU2539897C2 (enExample)
SG (2) SG177685A1 (enExample)
TW (1) TWI487813B (enExample)
WO (1) WO2011012462A2 (enExample)

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EP2459779B1 (en) * 2009-07-30 2015-09-09 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
SG10201510522XA (en) 2010-12-21 2016-01-28 Basf Se Composition for metal electroplating comprising leveling agent
MY161362A (en) * 2011-02-22 2017-04-14 Basf Se Polymers based on glyceryl carbonate
BR112013021062A2 (pt) * 2011-02-22 2019-09-24 Basf Se polímero, processo para a preparação de um polímero, e, uso de um polímero
MY168658A (en) 2011-06-01 2018-11-28 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
CN104797633B (zh) 2012-11-09 2018-04-24 巴斯夫欧洲公司 用于金属电镀的包含调平剂的组合物
EP2966961A2 (en) * 2013-03-13 2016-01-20 Basf Se Humectant compositions that effectively increase moisture retention in soil and associated methods for identifying same
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
SG11201604646TA (en) * 2013-12-09 2016-07-28 Aveni Copper electrodeposition bath containing an electrochemically inert cation
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
EP3885475A1 (en) * 2016-07-18 2021-09-29 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se レベリング剤を含んだコバルト電気メッキ用組成物
JP7383632B2 (ja) 2018-03-29 2023-11-20 ビーエーエスエフ ソシエタス・ヨーロピア 錯化剤を含むスズ-銀合金電気メッキ用組成物
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
US20220356592A1 (en) 2019-09-27 2022-11-10 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物

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US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
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US20120027948A1 (en) 2009-04-07 2012-02-02 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5702359B2 (ja) 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
RU2542219C2 (ru) 2009-04-07 2015-02-20 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности

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