KR101752018B1 - 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 - Google Patents

무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Download PDF

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KR101752018B1
KR101752018B1 KR1020127004870A KR20127004870A KR101752018B1 KR 101752018 B1 KR101752018 B1 KR 101752018B1 KR 1020127004870 A KR1020127004870 A KR 1020127004870A KR 20127004870 A KR20127004870 A KR 20127004870A KR 101752018 B1 KR101752018 B1 KR 101752018B1
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South Korea
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polyhydric alcohol
composition
copper
oxide
substrate
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KR20120051721A (ko
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코넬리아 뢰거-괴퍼트
로만 베네딕트 라에터
알렉산드라 하그
디터 마이어
샤를롯 엠넷
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
KR1020127004870A 2009-07-30 2010-07-16 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Active KR101752018B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
US61/229,803 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20120051721A KR20120051721A (ko) 2012-05-22
KR101752018B1 true KR101752018B1 (ko) 2017-06-28

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KR1020127004870A Active KR101752018B1 (ko) 2009-07-30 2010-07-16 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물

Country Status (11)

Country Link
US (1) US9869029B2 (enExample)
EP (1) EP2459778B1 (enExample)
JP (1) JP5714581B2 (enExample)
KR (1) KR101752018B1 (enExample)
CN (1) CN102597329B (enExample)
IL (1) IL217536A (enExample)
MY (1) MY157126A (enExample)
RU (1) RU2539897C2 (enExample)
SG (2) SG177685A1 (enExample)
TW (1) TWI487813B (enExample)
WO (1) WO2011012462A2 (enExample)

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JP6245988B2 (ja) * 2011-02-22 2017-12-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ グリセリンカーボネートに基づく重合体
WO2012113618A1 (de) * 2011-02-22 2012-08-30 Basf Se Polymere basierend auf glycerincarbonat und einem alkohol
RU2013158459A (ru) 2011-06-01 2015-07-20 Басф Се Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
JP6411354B2 (ja) 2012-11-09 2018-10-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平坦化剤を含む金属電気めっきのための組成物
KR20150127670A (ko) * 2013-03-13 2015-11-17 바스프 에스이 토양에서 수분 보유를 효과적으로 증가시키는 습윤제 조성물 및 그의 관련된 식별 방법
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
CN105899715B (zh) * 2013-12-09 2019-05-31 阿文尼公司 含有电化学惰性阳离子的铜电沉积浴
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
CN114059125A (zh) * 2016-07-18 2022-02-18 巴斯夫欧洲公司 包含用于无空隙亚微米结构填充的添加剂的钴镀覆用组合物
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
CN120776404A (zh) * 2017-11-20 2025-10-14 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
KR102786663B1 (ko) 2018-03-29 2025-03-25 바스프 에스이 착화제를 포함하는 주석-은 합금 전기도금용 조성물
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
US20250149380A1 (en) * 2023-11-02 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming same

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Also Published As

Publication number Publication date
SG177685A1 (en) 2012-02-28
RU2539897C2 (ru) 2015-01-27
EP2459778B1 (en) 2015-01-14
US20120128888A1 (en) 2012-05-24
WO2011012462A2 (en) 2011-02-03
IL217536A (en) 2016-05-31
KR20120051721A (ko) 2012-05-22
JP5714581B2 (ja) 2015-05-07
WO2011012462A3 (en) 2012-01-19
TW201109477A (en) 2011-03-16
EP2459778A2 (en) 2012-06-06
SG10201404394QA (en) 2014-10-30
IL217536A0 (en) 2012-02-29
CN102597329A (zh) 2012-07-18
CN102597329B (zh) 2015-12-16
TWI487813B (zh) 2015-06-11
RU2012107133A (ru) 2013-09-10
MY157126A (en) 2016-05-13
US9869029B2 (en) 2018-01-16
JP2013500394A (ja) 2013-01-07

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