SG10201404394QA - Composition for metal plating comprising suppressing agent for void free submicron feature filing - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature filingInfo
- Publication number
- SG10201404394QA SG10201404394QA SG10201404394QA SG10201404394QA SG10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA
- Authority
- SG
- Singapore
- Prior art keywords
- filing
- composition
- metal plating
- suppressing agent
- void free
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
- 239000011800 void material Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22980309P | 2009-07-30 | 2009-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201404394QA true SG10201404394QA (en) | 2014-10-30 |
Family
ID=43425023
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012003315A SG177685A1 (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
SG10201404394QA SG10201404394QA (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012003315A SG177685A1 (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
Country | Link |
---|---|
US (1) | US9869029B2 (en) |
EP (1) | EP2459778B1 (en) |
JP (1) | JP5714581B2 (en) |
KR (1) | KR101752018B1 (en) |
CN (1) | CN102597329B (en) |
IL (1) | IL217536A (en) |
MY (1) | MY157126A (en) |
RU (1) | RU2539897C2 (en) |
SG (2) | SG177685A1 (en) |
TW (1) | TWI487813B (en) |
WO (1) | WO2011012462A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011012475A1 (en) * | 2009-07-30 | 2011-02-03 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
US8790426B2 (en) | 2010-04-27 | 2014-07-29 | Basf Se | Quaternized terpolymer |
CN103270064B (en) | 2010-12-21 | 2016-12-07 | 巴斯夫欧洲公司 | Comprise the composition for metal electroplating of levelling agent |
RU2600985C2 (en) * | 2011-02-22 | 2016-10-27 | Басф Се | Polymers based on glycerolcarbonate |
BR112013021062A2 (en) * | 2011-02-22 | 2019-09-24 | Basf Se | polymer, process for preparing a polymer, and use of a polymer |
WO2012164509A1 (en) | 2011-06-01 | 2012-12-06 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
US20130133243A1 (en) | 2011-06-28 | 2013-05-30 | Basf Se | Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants |
KR102140431B1 (en) | 2012-11-09 | 2020-08-03 | 바스프 에스이 | Composition for metal electroplating comprising leveling agent |
JP6463330B2 (en) * | 2013-03-13 | 2019-01-30 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Wetting agent compositions that effectively enhance soil water retention and related methods for identification thereof |
PL406197A1 (en) * | 2013-11-22 | 2015-05-25 | Inphotech Spółka Z Ograniczoną Odpowiedzialnością | Method for connecting optical fibres coated by conducting layers with metallic elements |
WO2015086180A1 (en) * | 2013-12-09 | 2015-06-18 | Alchimer | Copper electrodeposition bath containing an electrochemically inert cation |
US9617648B2 (en) * | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
EP3885475A1 (en) * | 2016-07-18 | 2021-09-29 | Basf Se | Composition for cobalt plating comprising additive for void-free submicron feature filling |
KR102457310B1 (en) * | 2016-12-20 | 2022-10-20 | 바스프 에스이 | Composition for Metal Plating Containing Inhibitory Agents for Void-Free Filling |
US11387108B2 (en) | 2017-09-04 | 2022-07-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
KR102647950B1 (en) * | 2017-11-20 | 2024-03-14 | 바스프 에스이 | Composition for cobalt electroplating containing leveling agent |
US20210025070A1 (en) * | 2018-03-29 | 2021-01-28 | Basf Se | Composition for tin-silver alloy electroplating comprising a complexing agent |
US10529622B1 (en) | 2018-07-10 | 2020-01-07 | International Business Machines Corporation | Void-free metallic interconnect structures with self-formed diffusion barrier layers |
EP4034696A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
WO2021058336A1 (en) | 2019-09-27 | 2021-04-01 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
CN115335434A (en) | 2020-04-03 | 2022-11-11 | 巴斯夫欧洲公司 | Composition for copper bump electrodeposition comprising polyaminoamide type leveling agent |
EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
US11384446B2 (en) * | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
IL311715A (en) | 2021-10-01 | 2024-05-01 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
WO2024008562A1 (en) | 2022-07-07 | 2024-01-11 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
Family Cites Families (28)
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US2441555A (en) | 1943-10-12 | 1948-05-18 | Heyden Chemical Corp | Mixed esters of polyhydric alcohols |
GB602591A (en) * | 1945-02-12 | 1948-05-31 | Du Pont | Improvements in or relating to the electro-deposition of metals |
US3956079A (en) * | 1972-12-14 | 1976-05-11 | M & T Chemicals Inc. | Electrodeposition of copper |
US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
SU1055781A1 (en) * | 1982-03-22 | 1983-11-23 | Ленинградский ордена Трудового Красного Знамени технологический институт целлюлозно-бумажной промышленности | Aqueous electrolyte for bright copper plating |
US4487853A (en) * | 1983-12-27 | 1984-12-11 | Basf Wyandotte Corporation | Low ethylene oxide/high primary hydroxyl content polyether-ester polyols and polyurethane foams based thereon |
JPS62182295A (en) * | 1985-08-07 | 1987-08-10 | Daiwa Tokushu Kk | Copper plating bath composition |
DE4003243A1 (en) | 1990-02-03 | 1991-08-08 | Basf Ag | Use of tri:alkanolamine polyether(s) as demulsifiers in o/w emulsions - obtainable by condensing tri:alkanol:amine(s) in presence of (hypo)phosphorous acid |
US5888373A (en) * | 1997-06-23 | 1999-03-30 | Industrial Technology Research Institute | Method for repairing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from acidic waste solutions containing nickel and zinc ions and electroplating thereof |
DE10033433A1 (en) * | 2000-07-10 | 2002-01-24 | Basf Ag | Process for electrolytic galvanizing from electrolytes containing alkanesulfonic acid |
US20020074242A1 (en) * | 2000-10-13 | 2002-06-20 | Shipley Company, L.L.C. | Seed layer recovery |
EP1197587B1 (en) | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
AU2002215939A1 (en) * | 2000-10-19 | 2002-04-29 | Atotech Deutschland Gmbh | Copper bath and method of depositing a matt copper coating |
US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
DE10107880B4 (en) | 2001-02-20 | 2007-12-06 | Clariant Produkte (Deutschland) Gmbh | Alkoxylated polyglycerols and their use as emulsion breakers |
EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
DE10325198B4 (en) | 2003-06-04 | 2007-10-25 | Clariant Produkte (Deutschland) Gmbh | Use of alkoxylated crosslinked polyglycerols as biodegradable emulsion breakers |
US20050133376A1 (en) | 2003-12-19 | 2005-06-23 | Opaskar Vincent C. | Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom |
CN101080513A (en) | 2004-11-29 | 2007-11-28 | 技术公司 | Near neutral pH tin electroplating solution |
US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
RU2282682C1 (en) * | 2005-04-28 | 2006-08-27 | Российский химико-технологический университет им. Д.И. Менделеева | Method and electrolyte for copper plating |
MY142392A (en) | 2005-10-26 | 2010-11-30 | Malaysian Palm Oil Board | A process for preparing polymers of polyhydric alcohols |
US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
RU2385366C1 (en) * | 2008-12-15 | 2010-03-27 | Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта | Electrolyte for copper coating steel pads |
MY156728A (en) | 2009-04-07 | 2016-03-15 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
US20120027948A1 (en) | 2009-04-07 | 2012-02-02 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
MY158203A (en) | 2009-04-07 | 2016-09-15 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2010
- 2010-07-16 CN CN201080033647.4A patent/CN102597329B/en active Active
- 2010-07-16 US US13/387,776 patent/US9869029B2/en active Active
- 2010-07-16 SG SG2012003315A patent/SG177685A1/en unknown
- 2010-07-16 WO PCT/EP2010/060276 patent/WO2011012462A2/en active Application Filing
- 2010-07-16 KR KR1020127004870A patent/KR101752018B1/en active IP Right Grant
- 2010-07-16 SG SG10201404394QA patent/SG10201404394QA/en unknown
- 2010-07-16 EP EP10731757.0A patent/EP2459778B1/en active Active
- 2010-07-16 JP JP2012522093A patent/JP5714581B2/en active Active
- 2010-07-16 RU RU2012107133/02A patent/RU2539897C2/en not_active IP Right Cessation
- 2010-07-16 MY MYPI2012000302A patent/MY157126A/en unknown
- 2010-07-30 TW TW099125535A patent/TWI487813B/en active
-
2012
- 2012-01-15 IL IL217536A patent/IL217536A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
SG177685A1 (en) | 2012-02-28 |
JP2013500394A (en) | 2013-01-07 |
IL217536A (en) | 2016-05-31 |
KR101752018B1 (en) | 2017-06-28 |
JP5714581B2 (en) | 2015-05-07 |
TW201109477A (en) | 2011-03-16 |
RU2539897C2 (en) | 2015-01-27 |
MY157126A (en) | 2016-05-13 |
US9869029B2 (en) | 2018-01-16 |
US20120128888A1 (en) | 2012-05-24 |
WO2011012462A3 (en) | 2012-01-19 |
CN102597329B (en) | 2015-12-16 |
TWI487813B (en) | 2015-06-11 |
CN102597329A (en) | 2012-07-18 |
EP2459778B1 (en) | 2015-01-14 |
IL217536A0 (en) | 2012-02-29 |
RU2012107133A (en) | 2013-09-10 |
WO2011012462A2 (en) | 2011-02-03 |
EP2459778A2 (en) | 2012-06-06 |
KR20120051721A (en) | 2012-05-22 |
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