SG10201404394QA - Composition for metal plating comprising suppressing agent for void free submicron feature filing - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filing

Info

Publication number
SG10201404394QA
SG10201404394QA SG10201404394QA SG10201404394QA SG10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA SG 10201404394Q A SG10201404394Q A SG 10201404394QA
Authority
SG
Singapore
Prior art keywords
filing
composition
metal plating
suppressing agent
void free
Prior art date
Application number
SG10201404394QA
Inventor
Cornelia Röger-Göpfert
Roman Benedikt Raether
Alexandra Haag
Dieter Mayer
Charlotte Emnet
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG10201404394QA publication Critical patent/SG10201404394QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
SG10201404394QA 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filing SG10201404394QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30

Publications (1)

Publication Number Publication Date
SG10201404394QA true SG10201404394QA (en) 2014-10-30

Family

ID=43425023

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012003315A SG177685A1 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling
SG10201404394QA SG10201404394QA (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012003315A SG177685A1 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Country Status (11)

Country Link
US (1) US9869029B2 (en)
EP (1) EP2459778B1 (en)
JP (1) JP5714581B2 (en)
KR (1) KR101752018B1 (en)
CN (1) CN102597329B (en)
IL (1) IL217536A (en)
MY (1) MY157126A (en)
RU (1) RU2539897C2 (en)
SG (2) SG177685A1 (en)
TW (1) TWI487813B (en)
WO (1) WO2011012462A2 (en)

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* Cited by examiner, † Cited by third party
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WO2011012475A1 (en) * 2009-07-30 2011-02-03 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
CN103270064B (en) 2010-12-21 2016-12-07 巴斯夫欧洲公司 Comprise the composition for metal electroplating of levelling agent
RU2600985C2 (en) * 2011-02-22 2016-10-27 Басф Се Polymers based on glycerolcarbonate
BR112013021062A2 (en) * 2011-02-22 2019-09-24 Basf Se polymer, process for preparing a polymer, and use of a polymer
WO2012164509A1 (en) 2011-06-01 2012-12-06 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
KR102140431B1 (en) 2012-11-09 2020-08-03 바스프 에스이 Composition for metal electroplating comprising leveling agent
JP6463330B2 (en) * 2013-03-13 2019-01-30 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se Wetting agent compositions that effectively enhance soil water retention and related methods for identification thereof
PL406197A1 (en) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Method for connecting optical fibres coated by conducting layers with metallic elements
WO2015086180A1 (en) * 2013-12-09 2015-06-18 Alchimer Copper electrodeposition bath containing an electrochemically inert cation
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
EP3885475A1 (en) * 2016-07-18 2021-09-29 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
KR102457310B1 (en) * 2016-12-20 2022-10-20 바스프 에스이 Composition for Metal Plating Containing Inhibitory Agents for Void-Free Filling
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
KR102647950B1 (en) * 2017-11-20 2024-03-14 바스프 에스이 Composition for cobalt electroplating containing leveling agent
US20210025070A1 (en) * 2018-03-29 2021-01-28 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN115335434A (en) 2020-04-03 2022-11-11 巴斯夫欧洲公司 Composition for copper bump electrodeposition comprising polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
IL311715A (en) 2021-10-01 2024-05-01 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition

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MY156728A (en) 2009-04-07 2016-03-15 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20120027948A1 (en) 2009-04-07 2012-02-02 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
MY158203A (en) 2009-04-07 2016-09-15 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Also Published As

Publication number Publication date
SG177685A1 (en) 2012-02-28
JP2013500394A (en) 2013-01-07
IL217536A (en) 2016-05-31
KR101752018B1 (en) 2017-06-28
JP5714581B2 (en) 2015-05-07
TW201109477A (en) 2011-03-16
RU2539897C2 (en) 2015-01-27
MY157126A (en) 2016-05-13
US9869029B2 (en) 2018-01-16
US20120128888A1 (en) 2012-05-24
WO2011012462A3 (en) 2012-01-19
CN102597329B (en) 2015-12-16
TWI487813B (en) 2015-06-11
CN102597329A (en) 2012-07-18
EP2459778B1 (en) 2015-01-14
IL217536A0 (en) 2012-02-29
RU2012107133A (en) 2013-09-10
WO2011012462A2 (en) 2011-02-03
EP2459778A2 (en) 2012-06-06
KR20120051721A (en) 2012-05-22

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