TWI487813B - 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 - Google Patents

包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 Download PDF

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Publication number
TWI487813B
TWI487813B TW099125535A TW99125535A TWI487813B TW I487813 B TWI487813 B TW I487813B TW 099125535 A TW099125535 A TW 099125535A TW 99125535 A TW99125535 A TW 99125535A TW I487813 B TWI487813 B TW I487813B
Authority
TW
Taiwan
Prior art keywords
composition
copper
group
polyol
substrate
Prior art date
Application number
TW099125535A
Other languages
English (en)
Chinese (zh)
Other versions
TW201109477A (en
Inventor
康尼利亞 羅傑
羅曼 班尼狄克 瑞索
亞力山佐 賀格
迪爾特 梅爾
夏落特 伊尼特
Original Assignee
巴地斯顏料化工廠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴地斯顏料化工廠 filed Critical 巴地斯顏料化工廠
Publication of TW201109477A publication Critical patent/TW201109477A/zh
Application granted granted Critical
Publication of TWI487813B publication Critical patent/TWI487813B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
TW099125535A 2009-07-30 2010-07-30 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 TWI487813B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30

Publications (2)

Publication Number Publication Date
TW201109477A TW201109477A (en) 2011-03-16
TWI487813B true TWI487813B (zh) 2015-06-11

Family

ID=43425023

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099125535A TWI487813B (zh) 2009-07-30 2010-07-30 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物

Country Status (11)

Country Link
US (1) US9869029B2 (enExample)
EP (1) EP2459778B1 (enExample)
JP (1) JP5714581B2 (enExample)
KR (1) KR101752018B1 (enExample)
CN (1) CN102597329B (enExample)
IL (1) IL217536A (enExample)
MY (1) MY157126A (enExample)
RU (1) RU2539897C2 (enExample)
SG (2) SG177685A1 (enExample)
TW (1) TWI487813B (enExample)
WO (1) WO2011012462A2 (enExample)

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JP6245988B2 (ja) * 2011-02-22 2017-12-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ グリセリンカーボネートに基づく重合体
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JP6411354B2 (ja) 2012-11-09 2018-10-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平坦化剤を含む金属電気めっきのための組成物
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CN114059125A (zh) * 2016-07-18 2022-02-18 巴斯夫欧洲公司 包含用于无空隙亚微米结构填充的添加剂的钴镀覆用组合物
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
CN120776404A (zh) * 2017-11-20 2025-10-14 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
KR102786663B1 (ko) 2018-03-29 2025-03-25 바스프 에스이 착화제를 포함하는 주석-은 합금 전기도금용 조성물
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
IL296980A (en) 2020-04-03 2022-12-01 Basf Se The composition for electrodeposition of copper bumps containing a polyaminoamide compensator
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US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
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Also Published As

Publication number Publication date
KR101752018B1 (ko) 2017-06-28
SG177685A1 (en) 2012-02-28
RU2539897C2 (ru) 2015-01-27
EP2459778B1 (en) 2015-01-14
US20120128888A1 (en) 2012-05-24
WO2011012462A2 (en) 2011-02-03
IL217536A (en) 2016-05-31
KR20120051721A (ko) 2012-05-22
JP5714581B2 (ja) 2015-05-07
WO2011012462A3 (en) 2012-01-19
TW201109477A (en) 2011-03-16
EP2459778A2 (en) 2012-06-06
SG10201404394QA (en) 2014-10-30
IL217536A0 (en) 2012-02-29
CN102597329A (zh) 2012-07-18
CN102597329B (zh) 2015-12-16
RU2012107133A (ru) 2013-09-10
MY157126A (en) 2016-05-13
US9869029B2 (en) 2018-01-16
JP2013500394A (ja) 2013-01-07

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