MY157126A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filling

Info

Publication number
MY157126A
MY157126A MYPI2012000302A MYPI2012000302A MY157126A MY 157126 A MY157126 A MY 157126A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY 157126 A MY157126 A MY 157126A
Authority
MY
Malaysia
Prior art keywords
composition
metal plating
suppressing agent
void free
feature filling
Prior art date
Application number
MYPI2012000302A
Other languages
English (en)
Inventor
Röger Göpfert
Raether Roman Benedikt
Haag Alexandra
Mayer Dieter
Emnet Charlotte
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY157126A publication Critical patent/MY157126A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
MYPI2012000302A 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling MY157126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30

Publications (1)

Publication Number Publication Date
MY157126A true MY157126A (en) 2016-05-13

Family

ID=43425023

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012000302A MY157126A (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Country Status (11)

Country Link
US (1) US9869029B2 (enExample)
EP (1) EP2459778B1 (enExample)
JP (1) JP5714581B2 (enExample)
KR (1) KR101752018B1 (enExample)
CN (1) CN102597329B (enExample)
IL (1) IL217536A (enExample)
MY (1) MY157126A (enExample)
RU (1) RU2539897C2 (enExample)
SG (2) SG177685A1 (enExample)
TW (1) TWI487813B (enExample)
WO (1) WO2011012462A2 (enExample)

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EP2459779B1 (en) * 2009-07-30 2015-09-09 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
SG10201510522XA (en) 2010-12-21 2016-01-28 Basf Se Composition for metal electroplating comprising leveling agent
MY161362A (en) * 2011-02-22 2017-04-14 Basf Se Polymers based on glyceryl carbonate
BR112013021062A2 (pt) * 2011-02-22 2019-09-24 Basf Se polímero, processo para a preparação de um polímero, e, uso de um polímero
MY168658A (en) 2011-06-01 2018-11-28 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
CN104797633B (zh) 2012-11-09 2018-04-24 巴斯夫欧洲公司 用于金属电镀的包含调平剂的组合物
EP2966961A2 (en) * 2013-03-13 2016-01-20 Basf Se Humectant compositions that effectively increase moisture retention in soil and associated methods for identifying same
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
SG11201604646TA (en) * 2013-12-09 2016-07-28 Aveni Copper electrodeposition bath containing an electrochemically inert cation
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
EP3885475A1 (en) * 2016-07-18 2021-09-29 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se レベリング剤を含んだコバルト電気メッキ用組成物
JP7383632B2 (ja) 2018-03-29 2023-11-20 ビーエーエスエフ ソシエタス・ヨーロピア 錯化剤を含むスズ-銀合金電気メッキ用組成物
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
US20220356592A1 (en) 2019-09-27 2022-11-10 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物

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US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
RU2385366C1 (ru) * 2008-12-15 2010-03-27 Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта Электролит меднения стальных подложек
US20120027948A1 (en) 2009-04-07 2012-02-02 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5702359B2 (ja) 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
RU2542219C2 (ru) 2009-04-07 2015-02-20 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности

Also Published As

Publication number Publication date
US20120128888A1 (en) 2012-05-24
SG10201404394QA (en) 2014-10-30
WO2011012462A3 (en) 2012-01-19
KR20120051721A (ko) 2012-05-22
JP5714581B2 (ja) 2015-05-07
WO2011012462A2 (en) 2011-02-03
US9869029B2 (en) 2018-01-16
RU2539897C2 (ru) 2015-01-27
CN102597329A (zh) 2012-07-18
EP2459778B1 (en) 2015-01-14
RU2012107133A (ru) 2013-09-10
EP2459778A2 (en) 2012-06-06
CN102597329B (zh) 2015-12-16
SG177685A1 (en) 2012-02-28
KR101752018B1 (ko) 2017-06-28
JP2013500394A (ja) 2013-01-07
IL217536A0 (en) 2012-02-29
IL217536A (en) 2016-05-31
TW201109477A (en) 2011-03-16
TWI487813B (zh) 2015-06-11

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