MY157126A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature fillingInfo
- Publication number
- MY157126A MY157126A MYPI2012000302A MYPI2012000302A MY157126A MY 157126 A MY157126 A MY 157126A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY 157126 A MY157126 A MY 157126A
- Authority
- MY
- Malaysia
- Prior art keywords
- composition
- metal plating
- suppressing agent
- void free
- feature filling
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22980309P | 2009-07-30 | 2009-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY157126A true MY157126A (en) | 2016-05-13 |
Family
ID=43425023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2012000302A MY157126A (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9869029B2 (enExample) |
| EP (1) | EP2459778B1 (enExample) |
| JP (1) | JP5714581B2 (enExample) |
| KR (1) | KR101752018B1 (enExample) |
| CN (1) | CN102597329B (enExample) |
| IL (1) | IL217536A (enExample) |
| MY (1) | MY157126A (enExample) |
| RU (1) | RU2539897C2 (enExample) |
| SG (2) | SG177685A1 (enExample) |
| TW (1) | TWI487813B (enExample) |
| WO (1) | WO2011012462A2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5775077B2 (ja) * | 2009-07-30 | 2015-09-09 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 無ボイドでのサブミクロン構造物充填用の、抑制剤を含有する金属メッキ組成物 |
| US8790426B2 (en) | 2010-04-27 | 2014-07-29 | Basf Se | Quaternized terpolymer |
| EP2655457B1 (en) | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| JP6245988B2 (ja) * | 2011-02-22 | 2017-12-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | グリセリンカーボネートに基づく重合体 |
| WO2012113618A1 (de) * | 2011-02-22 | 2012-08-30 | Basf Se | Polymere basierend auf glycerincarbonat und einem alkohol |
| RU2013158459A (ru) | 2011-06-01 | 2015-07-20 | Басф Се | Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US20130133243A1 (en) | 2011-06-28 | 2013-05-30 | Basf Se | Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants |
| JP6411354B2 (ja) | 2012-11-09 | 2018-10-24 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 平坦化剤を含む金属電気めっきのための組成物 |
| KR20150127670A (ko) * | 2013-03-13 | 2015-11-17 | 바스프 에스이 | 토양에서 수분 보유를 효과적으로 증가시키는 습윤제 조성물 및 그의 관련된 식별 방법 |
| PL406197A1 (pl) * | 2013-11-22 | 2015-05-25 | Inphotech Spółka Z Ograniczoną Odpowiedzialnością | Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi |
| CN105899715B (zh) * | 2013-12-09 | 2019-05-31 | 阿文尼公司 | 含有电化学惰性阳离子的铜电沉积浴 |
| US9617648B2 (en) * | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
| CN114059125A (zh) * | 2016-07-18 | 2022-02-18 | 巴斯夫欧洲公司 | 包含用于无空隙亚微米结构填充的添加剂的钴镀覆用组合物 |
| KR102457310B1 (ko) * | 2016-12-20 | 2022-10-20 | 바스프 에스이 | 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 |
| EP3679179B1 (en) | 2017-09-04 | 2023-10-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN120776404A (zh) * | 2017-11-20 | 2025-10-14 | 巴斯夫欧洲公司 | 用于电镀钴的包含流平剂的组合物 |
| KR102786663B1 (ko) | 2018-03-29 | 2025-03-25 | 바스프 에스이 | 착화제를 포함하는 주석-은 합금 전기도금용 조성물 |
| US10529622B1 (en) | 2018-07-10 | 2020-01-07 | International Business Machines Corporation | Void-free metallic interconnect structures with self-formed diffusion barrier layers |
| WO2021058334A1 (en) | 2019-09-27 | 2021-04-01 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| EP4034697A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| IL296980A (en) | 2020-04-03 | 2022-12-01 | Basf Se | The composition for electrodeposition of copper bumps containing a polyaminoamide compensator |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| US11384446B2 (en) | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
| EP4409058B1 (en) | 2021-10-01 | 2025-11-05 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| EP4551742A1 (en) | 2022-07-07 | 2025-05-14 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| KR20250124348A (ko) | 2022-12-19 | 2025-08-19 | 바스프 에스이 | 구리 나노트윈 전착용 조성물 |
| US20250149380A1 (en) * | 2023-11-02 | 2025-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure and method of forming same |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2441555A (en) | 1943-10-12 | 1948-05-18 | Heyden Chemical Corp | Mixed esters of polyhydric alcohols |
| GB602591A (en) | 1945-02-12 | 1948-05-31 | Du Pont | Improvements in or relating to the electro-deposition of metals |
| US3956079A (en) * | 1972-12-14 | 1976-05-11 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
| SU1055781A1 (ru) * | 1982-03-22 | 1983-11-23 | Ленинградский ордена Трудового Красного Знамени технологический институт целлюлозно-бумажной промышленности | Водный электролит блест щего меднени |
| US4487853A (en) * | 1983-12-27 | 1984-12-11 | Basf Wyandotte Corporation | Low ethylene oxide/high primary hydroxyl content polyether-ester polyols and polyurethane foams based thereon |
| JPS62182295A (ja) * | 1985-08-07 | 1987-08-10 | Daiwa Tokushu Kk | 銅メツキ浴組成物 |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| US5888373A (en) * | 1997-06-23 | 1999-03-30 | Industrial Technology Research Institute | Method for repairing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from acidic waste solutions containing nickel and zinc ions and electroplating thereof |
| DE10033433A1 (de) * | 2000-07-10 | 2002-01-24 | Basf Ag | Verfahren zur elektrolytischen Verzinkung aus alkansulfonsäurehaltigen Elektrolyten |
| EP1197587B1 (en) | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
| US20020074242A1 (en) * | 2000-10-13 | 2002-06-20 | Shipley Company, L.L.C. | Seed layer recovery |
| EP1341951B1 (en) * | 2000-10-19 | 2004-05-19 | ATOTECH Deutschland GmbH | Copper bath and method of depositing a matt copper coating |
| US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| DE10107880B4 (de) | 2001-02-20 | 2007-12-06 | Clariant Produkte (Deutschland) Gmbh | Alkoxylierte Polyglycerine und ihre Verwendung als Emulsionsspalter |
| EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| DE10325198B4 (de) | 2003-06-04 | 2007-10-25 | Clariant Produkte (Deutschland) Gmbh | Verwendung von alkoxylierten vernetzten Polyglycerinen als biologisch abbaubare Emulsionsspalter |
| US20050133376A1 (en) * | 2003-12-19 | 2005-06-23 | Opaskar Vincent C. | Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom |
| EP1819848A1 (en) | 2004-11-29 | 2007-08-22 | Technic, Incorporated | Near neutral ph tin electroplating solution |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2282682C1 (ru) * | 2005-04-28 | 2006-08-27 | Российский химико-технологический университет им. Д.И. Менделеева | Электролит и способ меднения |
| MY142392A (en) | 2005-10-26 | 2010-11-30 | Malaysian Palm Oil Board | A process for preparing polymers of polyhydric alcohols |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| RU2385366C1 (ru) * | 2008-12-15 | 2010-03-27 | Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта | Электролит меднения стальных подложек |
| RU2542219C2 (ru) | 2009-04-07 | 2015-02-20 | Басф Се | Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности |
| WO2010115756A1 (en) | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| SG174264A1 (en) | 2009-04-07 | 2011-10-28 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2010
- 2010-07-16 WO PCT/EP2010/060276 patent/WO2011012462A2/en not_active Ceased
- 2010-07-16 JP JP2012522093A patent/JP5714581B2/ja active Active
- 2010-07-16 RU RU2012107133/02A patent/RU2539897C2/ru not_active IP Right Cessation
- 2010-07-16 MY MYPI2012000302A patent/MY157126A/en unknown
- 2010-07-16 CN CN201080033647.4A patent/CN102597329B/zh active Active
- 2010-07-16 SG SG2012003315A patent/SG177685A1/en unknown
- 2010-07-16 US US13/387,776 patent/US9869029B2/en active Active
- 2010-07-16 KR KR1020127004870A patent/KR101752018B1/ko active Active
- 2010-07-16 SG SG10201404394QA patent/SG10201404394QA/en unknown
- 2010-07-16 EP EP10731757.0A patent/EP2459778B1/en active Active
- 2010-07-30 TW TW099125535A patent/TWI487813B/zh active
-
2012
- 2012-01-15 IL IL217536A patent/IL217536A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR101752018B1 (ko) | 2017-06-28 |
| SG177685A1 (en) | 2012-02-28 |
| RU2539897C2 (ru) | 2015-01-27 |
| EP2459778B1 (en) | 2015-01-14 |
| US20120128888A1 (en) | 2012-05-24 |
| WO2011012462A2 (en) | 2011-02-03 |
| IL217536A (en) | 2016-05-31 |
| KR20120051721A (ko) | 2012-05-22 |
| JP5714581B2 (ja) | 2015-05-07 |
| WO2011012462A3 (en) | 2012-01-19 |
| TW201109477A (en) | 2011-03-16 |
| EP2459778A2 (en) | 2012-06-06 |
| SG10201404394QA (en) | 2014-10-30 |
| IL217536A0 (en) | 2012-02-29 |
| CN102597329A (zh) | 2012-07-18 |
| CN102597329B (zh) | 2015-12-16 |
| TWI487813B (zh) | 2015-06-11 |
| RU2012107133A (ru) | 2013-09-10 |
| US9869029B2 (en) | 2018-01-16 |
| JP2013500394A (ja) | 2013-01-07 |
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