SG177685A1 - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature filling Download PDFInfo
- Publication number
- SG177685A1 SG177685A1 SG2012003315A SG2012003315A SG177685A1 SG 177685 A1 SG177685 A1 SG 177685A1 SG 2012003315 A SG2012003315 A SG 2012003315A SG 2012003315 A SG2012003315 A SG 2012003315A SG 177685 A1 SG177685 A1 SG 177685A1
- Authority
- SG
- Singapore
- Prior art keywords
- composition according
- polyalcohol
- copper
- condensate
- oxide
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22980309P | 2009-07-30 | 2009-07-30 | |
| PCT/EP2010/060276 WO2011012462A2 (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG177685A1 true SG177685A1 (en) | 2012-02-28 |
Family
ID=43425023
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012003315A SG177685A1 (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| SG10201404394QA SG10201404394QA (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201404394QA SG10201404394QA (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9869029B2 (enExample) |
| EP (1) | EP2459778B1 (enExample) |
| JP (1) | JP5714581B2 (enExample) |
| KR (1) | KR101752018B1 (enExample) |
| CN (1) | CN102597329B (enExample) |
| IL (1) | IL217536A (enExample) |
| MY (1) | MY157126A (enExample) |
| RU (1) | RU2539897C2 (enExample) |
| SG (2) | SG177685A1 (enExample) |
| TW (1) | TWI487813B (enExample) |
| WO (1) | WO2011012462A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2459779B1 (en) * | 2009-07-30 | 2015-09-09 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US8790426B2 (en) | 2010-04-27 | 2014-07-29 | Basf Se | Quaternized terpolymer |
| SG10201510522XA (en) | 2010-12-21 | 2016-01-28 | Basf Se | Composition for metal electroplating comprising leveling agent |
| MY161362A (en) * | 2011-02-22 | 2017-04-14 | Basf Se | Polymers based on glyceryl carbonate |
| BR112013021062A2 (pt) * | 2011-02-22 | 2019-09-24 | Basf Se | polímero, processo para a preparação de um polímero, e, uso de um polímero |
| MY168658A (en) | 2011-06-01 | 2018-11-28 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US20130133243A1 (en) | 2011-06-28 | 2013-05-30 | Basf Se | Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants |
| CN104797633B (zh) | 2012-11-09 | 2018-04-24 | 巴斯夫欧洲公司 | 用于金属电镀的包含调平剂的组合物 |
| EP2966961A2 (en) * | 2013-03-13 | 2016-01-20 | Basf Se | Humectant compositions that effectively increase moisture retention in soil and associated methods for identifying same |
| PL406197A1 (pl) * | 2013-11-22 | 2015-05-25 | Inphotech Spółka Z Ograniczoną Odpowiedzialnością | Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi |
| SG11201604646TA (en) * | 2013-12-09 | 2016-07-28 | Aveni | Copper electrodeposition bath containing an electrochemically inert cation |
| US9617648B2 (en) * | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
| EP3885475A1 (en) * | 2016-07-18 | 2021-09-29 | Basf Se | Composition for cobalt plating comprising additive for void-free submicron feature filling |
| KR102457310B1 (ko) * | 2016-12-20 | 2022-10-20 | 바스프 에스이 | 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 |
| KR102641595B1 (ko) | 2017-09-04 | 2024-02-27 | 바스프 에스이 | 평탄화 제제를 포함하는 금속 전기 도금용 조성물 |
| JP2021503560A (ja) * | 2017-11-20 | 2021-02-12 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | レベリング剤を含んだコバルト電気メッキ用組成物 |
| JP7383632B2 (ja) | 2018-03-29 | 2023-11-20 | ビーエーエスエフ ソシエタス・ヨーロピア | 錯化剤を含むスズ-銀合金電気メッキ用組成物 |
| US10529622B1 (en) | 2018-07-10 | 2020-01-07 | International Business Machines Corporation | Void-free metallic interconnect structures with self-formed diffusion barrier layers |
| US20220356592A1 (en) | 2019-09-27 | 2022-11-10 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| US20220333262A1 (en) | 2019-09-27 | 2022-10-20 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| EP4127025B1 (en) | 2020-04-03 | 2025-10-01 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| US11384446B2 (en) | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
| EP4409058B1 (en) | 2021-10-01 | 2025-11-05 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| EP4551742A1 (en) | 2022-07-07 | 2025-05-14 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| CN120457244A (zh) | 2022-12-19 | 2025-08-08 | 巴斯夫欧洲公司 | 用于铜纳米孪晶电沉积的组合物 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US2441555A (en) | 1943-10-12 | 1948-05-18 | Heyden Chemical Corp | Mixed esters of polyhydric alcohols |
| GB602591A (en) * | 1945-02-12 | 1948-05-31 | Du Pont | Improvements in or relating to the electro-deposition of metals |
| US3956079A (en) * | 1972-12-14 | 1976-05-11 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
| SU1055781A1 (ru) * | 1982-03-22 | 1983-11-23 | Ленинградский ордена Трудового Красного Знамени технологический институт целлюлозно-бумажной промышленности | Водный электролит блест щего меднени |
| US4487853A (en) * | 1983-12-27 | 1984-12-11 | Basf Wyandotte Corporation | Low ethylene oxide/high primary hydroxyl content polyether-ester polyols and polyurethane foams based thereon |
| JPS62182295A (ja) * | 1985-08-07 | 1987-08-10 | Daiwa Tokushu Kk | 銅メツキ浴組成物 |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| US5888373A (en) * | 1997-06-23 | 1999-03-30 | Industrial Technology Research Institute | Method for repairing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from acidic waste solutions containing nickel and zinc ions and electroplating thereof |
| DE10033433A1 (de) * | 2000-07-10 | 2002-01-24 | Basf Ag | Verfahren zur elektrolytischen Verzinkung aus alkansulfonsäurehaltigen Elektrolyten |
| US20020074242A1 (en) * | 2000-10-13 | 2002-06-20 | Shipley Company, L.L.C. | Seed layer recovery |
| US6682642B2 (en) | 2000-10-13 | 2004-01-27 | Shipley Company, L.L.C. | Seed repair and electroplating bath |
| US7074315B2 (en) * | 2000-10-19 | 2006-07-11 | Atotech Deutschland Gmbh | Copper bath and methods of depositing a matt copper coating |
| US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| DE10107880B4 (de) | 2001-02-20 | 2007-12-06 | Clariant Produkte (Deutschland) Gmbh | Alkoxylierte Polyglycerine und ihre Verwendung als Emulsionsspalter |
| EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| DE10325198B4 (de) | 2003-06-04 | 2007-10-25 | Clariant Produkte (Deutschland) Gmbh | Verwendung von alkoxylierten vernetzten Polyglycerinen als biologisch abbaubare Emulsionsspalter |
| US20050133376A1 (en) * | 2003-12-19 | 2005-06-23 | Opaskar Vincent C. | Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom |
| WO2006057873A1 (en) * | 2004-11-29 | 2006-06-01 | Technic, Inc. | Near neutral ph tin electroplating solution |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2282682C1 (ru) * | 2005-04-28 | 2006-08-27 | Российский химико-технологический университет им. Д.И. Менделеева | Электролит и способ меднения |
| MY142392A (en) | 2005-10-26 | 2010-11-30 | Malaysian Palm Oil Board | A process for preparing polymers of polyhydric alcohols |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| RU2385366C1 (ru) * | 2008-12-15 | 2010-03-27 | Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта | Электролит меднения стальных подложек |
| US20120027948A1 (en) | 2009-04-07 | 2012-02-02 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| JP5702359B2 (ja) | 2009-04-07 | 2015-04-15 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 |
| RU2542219C2 (ru) | 2009-04-07 | 2015-02-20 | Басф Се | Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности |
-
2010
- 2010-07-16 US US13/387,776 patent/US9869029B2/en active Active
- 2010-07-16 RU RU2012107133/02A patent/RU2539897C2/ru not_active IP Right Cessation
- 2010-07-16 SG SG2012003315A patent/SG177685A1/en unknown
- 2010-07-16 EP EP10731757.0A patent/EP2459778B1/en active Active
- 2010-07-16 JP JP2012522093A patent/JP5714581B2/ja active Active
- 2010-07-16 WO PCT/EP2010/060276 patent/WO2011012462A2/en not_active Ceased
- 2010-07-16 MY MYPI2012000302A patent/MY157126A/en unknown
- 2010-07-16 SG SG10201404394QA patent/SG10201404394QA/en unknown
- 2010-07-16 KR KR1020127004870A patent/KR101752018B1/ko active Active
- 2010-07-16 CN CN201080033647.4A patent/CN102597329B/zh active Active
- 2010-07-30 TW TW099125535A patent/TWI487813B/zh active
-
2012
- 2012-01-15 IL IL217536A patent/IL217536A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20120128888A1 (en) | 2012-05-24 |
| SG10201404394QA (en) | 2014-10-30 |
| WO2011012462A3 (en) | 2012-01-19 |
| KR20120051721A (ko) | 2012-05-22 |
| JP5714581B2 (ja) | 2015-05-07 |
| WO2011012462A2 (en) | 2011-02-03 |
| US9869029B2 (en) | 2018-01-16 |
| MY157126A (en) | 2016-05-13 |
| RU2539897C2 (ru) | 2015-01-27 |
| CN102597329A (zh) | 2012-07-18 |
| EP2459778B1 (en) | 2015-01-14 |
| RU2012107133A (ru) | 2013-09-10 |
| EP2459778A2 (en) | 2012-06-06 |
| CN102597329B (zh) | 2015-12-16 |
| KR101752018B1 (ko) | 2017-06-28 |
| JP2013500394A (ja) | 2013-01-07 |
| IL217536A0 (en) | 2012-02-29 |
| IL217536A (en) | 2016-05-31 |
| TW201109477A (en) | 2011-03-16 |
| TWI487813B (zh) | 2015-06-11 |
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