JP2013247369A - 複数の方向に出光可能な発光ダイオードチップを形成するためのサファイア基板、発光ダイオードチップ、及び発光装置 - Google Patents
複数の方向に出光可能な発光ダイオードチップを形成するためのサファイア基板、発光ダイオードチップ、及び発光装置 Download PDFInfo
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- JP2013247369A JP2013247369A JP2013111835A JP2013111835A JP2013247369A JP 2013247369 A JP2013247369 A JP 2013247369A JP 2013111835 A JP2013111835 A JP 2013111835A JP 2013111835 A JP2013111835 A JP 2013111835A JP 2013247369 A JP2013247369 A JP 2013247369A
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- Prior art keywords
- light emitting
- emitting diode
- light
- diode chip
- main surface
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- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 44
- 239000010980 sapphire Substances 0.000 title claims abstract description 44
- 239000004020 conductor Substances 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 13
- 239000012788 optical film Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000005060 rubber Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 aluminum nitride Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
- F21V21/14—Adjustable mountings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/235—Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/237—Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V15/00—Protecting lighting devices from damage
- F21V15/01—Housings, e.g. material or assembling of housing parts
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
- F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
- F21V21/002—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips making direct electrical contact, e.g. by piercing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/02—Globes; Bowls; Cover glasses characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/27—Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/65—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
- F21Y2107/50—Light sources with three-dimensionally disposed light-generating elements on planar substrates or supports, but arranged in different planes or with differing orientation, e.g. on plate-shaped supports with steps on which light-generating elements are mounted
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Abstract
【解決手段】サファイア基板は、互いに対向するように設けられる成長面及び第2の主表面を含む。サファイア基板の厚さは200μm以上である。発光ダイオードチップは、サファイア基板と、少なくとも1つの発光ダイオード構造とを含む。発光ダイオード構造は、成長面に設けられ、成長面の発光ダイオード構造が設けられていない部分と共に発光可能な第1の主表面を形成する。発光ダイオード構造から発せられた光線の少なくとも一部は、サファイア基板を透過して、第2の主表面から出射する。発光装置は、少なくとも1つの複数の方向に出光可能な発光ダイオードチップと、載置基部とを含む。発光ダイオードチップは載置基部に設けられている。
【選択図】図8
Description
2 透明基板
3、14 発光ダイオード構造
4 エネルギー変換層
5、26、324 載置基部
6 回路基板
7、7’ ランプ筐体
8 反射鏡
9、25 ダイヤモンド状炭素膜
11、100、200、301、302、303、304 発光装置
12M 非平面構造
13 緩衝層
16、31A 第1の電極
18、31B 第2の電極
20 絶縁層
21A 第1の主表面
21B 第2の主表面
22 導電パターン
23A 第1の接続導線
23B 第2の接続導線
28 光学膜
30、32 電極
34 発光面
51 支持フレーム
52 接合層
60 載置機構
61 挿入溝
62 支持フレーム
63 接合層
64 基部
71 カバー面
141 第1の半導体層
142 活性層
143 第2の半導体層
210 成長面
311A 第1の接続電極
311B 第2の接続電極
321 支持フレーム
322 装置基部
323 ライトストリップ
330 切欠き
341 載置基部
342 ストリップ状部
350A 第1の外部接続電極
350B 第2の外部接続電極
360 装置フレーム
D 距離
G 切欠き
H 孔
L 光線
P 回路パターン
S 空間
V+ 駆動電圧
V− 駆動電圧
θ1 第1の夾角
X 延伸方向
Claims (77)
- 複数の方向に出光可能な発光ダイオードチップを形成するためのサファイア基板であって、
互いに対向するように設けられる成長面及び第2の主表面を含み、
前記サファイア基板の厚さは、200μm以上である、サファイア基板。 - 前記第2の主表面は、非平面構造を有する、請求項1に記載のサファイア基板。
- 前記成長面又は前記第2の主表面に設けられるダイヤモンド状炭素(DLC:diamond-like carbon)膜を少なくとも1つさらに含む、請求項1に記載のサファイア基板。
- 前記ダイヤモンド状炭素膜と前記第2の主表面との間に設けられる光学膜を少なくとも1つさらに含む、請求項1に記載のサファイア基板。
- 前記成長面又は前記第2の主表面の面積は、その上に設けられる少なくとも1つの発光ダイオード構造の発光面の総面積の5倍以上である、請求項1に記載のサファイア基板。
- 前記第2の主表面に設けられ、且つ1種材質以上の蛍光粉を少なくとも含むエネルギー変換層を少なくとも1つさらに含む、請求項1に記載のサファイア基板。
- 前記第2の主表面又は前記成長面に設けられる反射鏡(reflector)又はフィルターをさらに含む、請求項1に記載のサファイア基板。
- 前記反射鏡又はフィルターは、異なる屈折率を有する誘電性薄膜を複数層含む、請求項7に記載のサファイア基板。
- 前記反射鏡は、複数層の金属酸化物を含む、請求項8に記載のサファイア基板。
- 前記成長面又は前記第2の主表面に設けられる第1の接続導線及び第2の接続導線をさらに含む、請求項1に記載のサファイア基板。
- 前記サファイア基板は、波長の範囲が420nm〜470nmの光線に対して、70%以上の透過率を有する、請求項1に記載のサファイア基板。
- 前記第1の接続導線は第1の接続電極に接続され、前記第2の接続導線は第2の接続電極に接続される、請求項10に記載のサファイア基板。
- 前記第1の接続電極と前記第2の接続電極とは、前記サファイア基板の両端又は同一側に対向するように設けられる、請求項12に記載のサファイア基板。
- 前記サファイア基板に少なくとも1つのピンが設けられ、前記ピンに電気的接続ポートが少なくとも設けられる、請求項1に記載のサファイア基板。
- 請求項1に記載のサファイア基板と、
複数の発光ダイオード構造であって、前記成長面に設けられ、前記成長面の前記複数の発光ダイオード構造が設けられていない部分と共に発光可能な第1の主表面を形成し、前記複数の発光ダイオード構造の全てが第1の電極及び第2の電極を有する、複数の発光ダイオード構造と、を含み、
前記複数の発光ダイオード構造のうち少なくとも1つの前記発光ダイオード構造の発光方向は、光が前記サファイア基板を介して前記第2の主表面から出射する方向を含む、複数の方向に出光可能な発光ダイオードチップ。 - 請求項1に記載のサファイア基板と、
発光ダイオード構造であって、前記成長面に設けられ、前記成長面の前記発光ダイオード構造が設けられていない部分と共に発光可能な第1の主表面を形成し、前記発光ダイオード構造が第1の電極と第2の電極とを有する、少なくとも1つの発光ダイオード構造と、を含み、
前記発光ダイオード構造の出射角度は180度よりも大きく、前記発光ダイオード構造が出射した光の少なくとも一部は前記サファイア基板を透過して、前記第2の主表面から出射する、複数の方向に出光可能な発光ダイオードチップ。 - 前記第1の主表面及び前記第2の主表面に設けられるエネルギー変換層をさらに含み、これらの異なる位置にある前記エネルギー変換層に含まれる蛍光粉の比率は1:0.5〜1:3である、請求項15又は16に記載の複数の方向に出光可能な発光ダイオードチップ。
- 前記発光ダイオード構造及び前記第2の主表面に設けられるエネルギー変換層をさらに含み、これらの異なる位置にある前記エネルギー変換層に含まれる蛍光粉の比率は1:0.5〜1:3である、請求項15又は16に記載の複数の方向に出光可能な発光ダイオードチップ。
- 前記サファイア基板は、前記第1の電極及び前記第2の電極のそれぞれに電気的に連結されている第1の接続電極及び第2の接続電極をさらに含み、
前記エネルギー変換層は、前記第1の接続電極及び前記第2の接続電極を覆わない、請求項17に記載の複数の方向に出光可能な発光ダイオードチップ。 - 前記サファイア基板は、前記第1の電極及び前記第2の電極のそれぞれに電気的に連結されている第1の接続電極及び第2の接続電極をさらに含み、
前記エネルギー変換層は、前記第1の接続電極及び前記第2の接続電極を覆わない、請求項18に記載の複数の方向に出光可能な発光ダイオードチップ。 - 前記第2の主表面に設けられる複数の発光ダイオード構造をさらに含み、
前記成長面における前記複数の発光ダイオード構造と前記第2主表面における前記複数の発光ダイオード構造とは、対応して交互にずらすように配列されている、請求項15又は16に記載の複数の方向に出光可能な発光ダイオードチップ。 - 少なくとも1つの請求項15又は16に記載の複数の方向に出光可能な発光ダイオードチップと、載置基部とを含み、
前記発光ダイオードチップは、前記載置基部に設けられている、発光装置。 - 前記発光ダイオードチップと前記載置基部とは、角度範囲が30°〜150°の第1の夾角をなす、請求項22に記載の発光装置。
- 支持フレームをさらに含み、前記支持フレームと前記載置基部とは連結し、前記発光ダイオードチップは前記支持フレームに固定されている、請求項22に記載の発光装置。
- 前記支持フレームは、前記発光ダイオードチップと前記載置基部とが前記第1の夾角をなすように折り曲げられることが可能である、請求項24に記載の発光装置。
- 複数の前記複数の方向に出光可能な発光ダイオードチップを含み、
前記複数の前記複数の方向に出光可能な発光ダイオードチップの少なくとも一部は、点対称又は線対称となるように前記載置基部に設けられる、請求項22に記載の発光装置。 - 少なくとも1つの請求項15又は16に記載の複数の方向に出光可能な発光ダイオードチップと、支持フレームとを含み、
前記発光ダイオードチップは、前記支持フレームに設けられている、発光装置。 - 互いに対向するように設けられる成長面及び第2の主表面を有する透明基板と、
複数の発光ダイオード構造であって、前記成長面に設けられ、前記成長面の前記複数の発光ダイオード構造が設けられていない部分と共に発光可能な第1の主表面を形成し、前記複数の発光ダイオード構造の全てが第1の電極及び第2の電極を有する、複数の発光ダイオード構造と、を含み、
前記複数の発光ダイオード構造のうち少なくとも1つの前記発光ダイオード構造の発光方向は、光が前記透明基板を介して前記第2の主表面から出射する方向を含む、複数の方向に出光可能な発光ダイオードチップ。 - 前記複数の発光ダイオード構造の少なくとも一部に設けられる絶縁層と、
前記絶縁層に設けられ、且つ複数の前記第1の電極の少なくとも一部及び複数の前記第2の電極の少なくとも一部に電気的に接続される導電パターンと、をさらに含み、
各前記発光ダイオード構造は、
前記透明基板に設けられる第1の半導体層と、
前記第1の半導体層に設けられる活性層と、
前記活性層に設けられる第2の半導体層と、を含む、請求項28に記載の発光ダイオードチップ。 - 前記発光ダイオード構造は、前記第1の半導体層と前記透明基板との間に設けられる緩衝層をさらに含む、請求項29に記載の発光ダイオードチップ。
- 前記第1の半導体層、前記活性層、前記第2の半導体層、及び前記緩衝層の材料は、3A族の窒化物を含む、請求項30に記載の発光ダイオードチップ。
- 前記複数の発光ダイオード構造、前記第1の主表面、又は前記第2の主表面に設けられる少なくとも1つのエネルギー変換層をさらに含み、
前記エネルギー変換層は、前記複数の発光ダイオード構造から発せられた光線の少なくとも一部を吸収し、異なる波長範囲の光線に変換する、請求項28に記載の発光ダイオードチップ。 - 前記エネルギー変換層は、前記第1の主表面及び前記第2の主表面に設けられ、これらの異なる位置にある前記エネルギー変換層に含まれる蛍光粉の比率は1:0.5〜1:3である、請求項32に記載の発光ダイオードチップ。
- 各前記複数の発光ダイオード構造のパワーは0.2ワット以下である、請求項28に記載の発光ダイオードチップ。
- 前記透明基板の材質は、アルミナ(Al2O3)、アルミナを含むサファイア、炭化珪素(SiC)、ガラス、プラスチック、又はゴムからなる群より選択されるものを含む、請求項28に記載の発光ダイオードチップ。
- 前記第2の主表面は、非平面構造を有する、請求項28に記載の発光ダイオードチップ。
- 前記成長面又は前記第2の主表面に設けられるダイヤモンド状炭素膜をさらに含む、請求項28に記載の発光ダイオードチップ。
- 前記透明基板と前記ダイヤモンド状炭素膜との間に設けられる光学膜をさらに含む、請求項37に記載の発光ダイオードチップ。
- 前記複数の発光ダイオード構造の少なくとも一つの出射角度は180度よりも大きい、請求項28に記載の発光ダイオードチップ。
- 前記透明基板は、材質がサファイアであり、且つ厚さが200μm以上である、請求項28に記載の発光ダイオードチップ。
- 前記第1の電極及び前記第2の電極のそれぞれは、前記透明基板に位置する第1の接続導線及び第2の接続導線に電気的に接続されている、請求項28に記載の発光ダイオードチップ。
- 前記第1の主表面と前記第2の主表面との光線色温度の差異は、1500K以下である、請求項28に記載の発光ダイオードチップ。
- 前記透明基板は、波長の範囲が420nm〜470nmの光線に対して、70%以上の光線透過率を有する、請求項28に記載の発光ダイオードチップ。
- 各前記発光ダイオード構造の全ては発光面を有し、
前記第1の主表面又は前記第2の主表面の面積は、前記複数の発光ダイオード構造の複数の前記発光面の総面積の5倍以上である、請求項28に記載の発光ダイオードチップ。 - 前記エネルギー変換層は、前記発光ダイオード構造及び前記第2の主表面に設けられ、これらの異なる位置にある前記エネルギー変換層に含まれる蛍光粉の比率は1:0.5〜1:3である、請求項28に記載の発光ダイオードチップ。
- 前記第2の主表面又は前記成長面に設けられる反射鏡又はフィルターをさらに含む、請求項28に記載の発光ダイオードチップ。
- 前記複数の発光ダイオード構造の少なくとも一部は、前記第2の主表面に設けられ、
前記成長面における前記複数の発光ダイオード構造と前記第2主表面における前記複数の発光ダイオード構造とは、対応して交互にずらすように配列されている、請求項28に記載の発光ダイオードチップ。 - 互いに対向するように設けられる成長面及び第2の主表面を有する透明基板と、
発光ダイオード構造であって、前記成長面に設けられ、前記成長面の前記発光ダイオード構造が設けられていない部分と共に発光可能な第1の主表面を形成する、少なくとも1つの発光ダイオード構造と、を含み、
前記発光ダイオード構造の出射角度は180度よりも大きく、前記発光ダイオード構造から発せられた光線の少なくとも一部は前記透明基板を透過して、前記第2の主表面から出射する、発光ダイオードチップ。 - 前記透明基板は、材質がサファイアであり、且つ厚さが200μm以上である、請求項48に記載の発光ダイオードチップ。
- 前記第1の主表面と前記第2の主表面との光線色温度の差異は、1500K以下である、請求項48に記載の発光ダイオードチップ。
- 少なくとも前記発光ダイオード構造、前記第1の主表面、又は前記第2の主表面に設けられるエネルギー変換層をさらに含み、
前記エネルギー変換層は、前記発光ダイオード構造から発せられた光線の少なくとも一部を吸収し、異なる波長範囲の光線に変換する、請求項48に記載の発光ダイオードチップ。 - 前記エネルギー変換層は、前記発光ダイオード構造に設けられ、且つ前記発光ダイオード構造と直接接触している、請求項51に記載の発光ダイオードチップ。
- 前記エネルギー変換層は、前記発光ダイオード構造と接触していない、請求項51に記載の発光ダイオードチップ。
- 前記エネルギー変換層は前記第1の主表面及び前記第2の主表面に設けられ、これらの異なる位置にある前記エネルギー変換層に含まれる蛍光粉の比率は1:0.5〜1:3である、請求項51に記載の発光ダイオードチップ。
- 前記エネルギー変換層は前記発光ダイオード構造及び前記第2の主表面に設けられ、これらの異なる位置にある前記エネルギー変換層に含まれる蛍光粉の比率は1:0.5〜1:3である、請求項51に記載の発光ダイオードチップ。
- 前記透明基板は、波長の範囲が420nm〜470nmの光線に対して、70%以上の光線透過率を有する、請求項48に記載の発光ダイオードチップ。
- 前記発光ダイオード構造は発光面を有し、
前記第1の主表面又は前記第2の主表面の面積は、前記発光ダイオード構造の前記発光面の総面積の5倍以上である、請求項48に記載の発光ダイオードチップ。 - 前記発光ダイオード構造のパワーは、0.2ワットよりも小さい、請求項48に記載の発光ダイオードチップ。
- 前記透明基板の材質は、アルミナ(Al2O3)、アルミナを含むサファイア、炭化珪素(SiC)、ガラス、プラスチック、又はゴムからなる群より選択されるものを含む、請求項48に記載の発光ダイオードチップ。
- 前記第2の主表面は、非平面構造を有する、請求項48に記載の発光ダイオードチップ。
- 前記成長面又は前記第2の主表面に設けられるダイヤモンド状炭素膜をさらに含む、請求項48に記載の発光ダイオードチップ。
- 前記透明基板と前記ダイヤモンド状炭素膜との間に設けられる光学膜をさらに含む、請求項61に記載の発光ダイオードチップ。
- 前記第2の主表面又は前記成長面に設けられる反射鏡又はフィルターをさらに含む、請求項48に記載の発光ダイオードチップ。
- 前記第2の主表面に設けられる複数の発光ダイオード構造をさらに含み、
前記成長面における前記複数の発光ダイオード構造と前記第2主表面における前記複数の発光ダイオード構造とは、対応して交互にずらすように配列されている、請求項48に記載の発光ダイオードチップ。 - 少なくとも1つの請求項28又は48に記載の複数の方向に出光可能な発光ダイオードチップと、載置基部とを含み、
前記発光ダイオードチップは、前記載置基部に設けられている、発光装置。 - 前記発光ダイオードチップと前記載置基部とは、角度範囲が30°〜150°の第1の夾角をなす、請求項65に記載の発光装置。
- 前記載置基部に連結される支持フレームをさらに含み、
前記発光ダイオードチップは、前記支持フレームに固定される、請求項65に記載の発光装置。 - 前記支持フレームは、前記発光ダイオードチップと前記載置基部とが前記第1の夾角をなすように折り曲げられることが可能である、請求項67に記載の発光装置。
- 複数の前記複数の方向に出光可能な発光ダイオードチップを含み、
前記複数の前記複数の方向に出光可能な発光ダイオードチップの少なくとも一部は、点対称又は線対称となるように前記載置基部に設けられる、請求項65に記載の発光装置。 - 複数の支持フレームをさらに含み、
前記複数の発光ダイオードチップの少なくとも一部は、前記複数の支持フレームにそれぞれ設けられている、請求項69に記載の発光装置。 - 前記複数の支持フレームと前記載置基部との夾角は、少なくとも一部が異なる角度を有する、請求項70に記載の発光装置。
- 前記支持フレームは、切欠きを少なくとも有し、
前記発光ダイオードチップは、前記支持フレームに前記切欠きに対応するように固定されている、請求項67に記載の発光装置。 - 前記支持フレームと前記載置基部とは一体化されている、請求項67に記載の発光装置。
- 前記支持フレームの材質は、アルミニウム材質の金属、複合金属材料、銅銅線、電線、セラミック基板又はプリント回路基板より選択されるものを含む、請求項67に記載の発光装置。
- 前記載置基部は、少なくとも1つの切欠き又は孔を含む、請求項65に記載の発光装置。
- 複数の前記発光ダイオードチップと、前記載置基部に連結される支持フレームと、を含み、
前記支持フレームは、ずらすように設けられる複数の切欠きを含み、
前記複数の発光ダイオードチップの少なくとも一部は、前記支持フレームに前記複数の切欠きに対応するように固定される、請求項65に記載の発光装置。 - 少なくとも1つの請求項28又は48に記載の複数の方向に出光可能な発光ダイオードチップと、支持フレームと、を含み、
前記発光ダイオードチップは、前記支持フレームに設けられる、発光装置。
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JP2020049778A Active JP7050841B2 (ja) | 2012-05-29 | 2020-03-19 | 発光装置 |
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Country Status (5)
Country | Link |
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US (7) | US20130320363A1 (ja) |
EP (6) | EP2669946B1 (ja) |
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