JP2013247363A5 - - Google Patents
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- Publication number
- JP2013247363A5 JP2013247363A5 JP2013108851A JP2013108851A JP2013247363A5 JP 2013247363 A5 JP2013247363 A5 JP 2013247363A5 JP 2013108851 A JP2013108851 A JP 2013108851A JP 2013108851 A JP2013108851 A JP 2013108851A JP 2013247363 A5 JP2013247363 A5 JP 2013247363A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- charge
- barrier layer
- forming
- gate terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims 31
- 230000006698 induction Effects 0.000 claims 24
- 239000000463 material Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 230000001939 inductive effect Effects 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 8
- 230000010287 polarization Effects 0.000 claims 8
- 239000003989 dielectric material Substances 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 5
- 229910052733 gallium Inorganic materials 0.000 claims 5
- 239000012212 insulator Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 4
- 229910002601 GaN Inorganic materials 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims 1
- 230000003321 amplification Effects 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/481,198 | 2012-05-25 | ||
| US13/481,198 US20130313561A1 (en) | 2012-05-25 | 2012-05-25 | Group iii-nitride transistor with charge-inducing layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013247363A JP2013247363A (ja) | 2013-12-09 |
| JP2013247363A5 true JP2013247363A5 (https=) | 2016-05-26 |
Family
ID=49547107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013108851A Pending JP2013247363A (ja) | 2012-05-25 | 2013-05-23 | 電荷誘導層を有するｉｉｉ族窒化物トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20130313561A1 (https=) |
| JP (1) | JP2013247363A (https=) |
| DE (1) | DE102013008512A1 (https=) |
| TW (1) | TW201407780A (https=) |
Families Citing this family (60)
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| US8884334B2 (en) * | 2012-11-09 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite layer stacking for enhancement mode transistor |
| US9570600B2 (en) | 2012-11-16 | 2017-02-14 | Massachusetts Institute Of Technology | Semiconductor structure and recess formation etch technique |
| US9105578B2 (en) * | 2013-03-12 | 2015-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interface for metal gate integration |
| US9263275B2 (en) | 2013-03-12 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interface for metal gate integration |
| JP6212124B2 (ja) * | 2013-08-30 | 2017-10-11 | 国立研究開発法人科学技術振興機構 | ＩｎＧａＡｌＮ系半導体素子 |
| KR102086360B1 (ko) * | 2013-11-07 | 2020-03-09 | 삼성전자주식회사 | n형 질화물 반도체의 전극형성방법, 질화물 반도체 소자 및 그 제조방법 |
| US10483386B2 (en) * | 2014-01-17 | 2019-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, transistor having doped seed layer and method of manufacturing the same |
| US9660067B2 (en) | 2014-03-25 | 2017-05-23 | Intel Corporation | III-N transistors with epitaxial layers providing steep subthreshold swing |
| US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
| US10325774B2 (en) | 2014-09-18 | 2019-06-18 | Intel Corporation | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
| US10229991B2 (en) | 2014-09-25 | 2019-03-12 | Intel Corporation | III-N epitaxial device structures on free standing silicon mesas |
| KR102238547B1 (ko) | 2014-10-30 | 2021-04-09 | 인텔 코포레이션 | 질화 갈륨 트랜지스터에서 2d 전자 가스에 대한 낮은 접촉 저항을 위한 소스/드레인 재성장 |
| CN107078098B (zh) * | 2014-11-18 | 2021-04-06 | 英特尔公司 | 使用n沟道和p沟道氮化镓晶体管的cmos电路 |
| US10756208B2 (en) | 2014-11-25 | 2020-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated chip and method of forming the same |
| US11164970B2 (en) | 2014-11-25 | 2021-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact field plate |
| EP3235005A4 (en) | 2014-12-18 | 2018-09-12 | Intel Corporation | N-channel gallium nitride transistors |
| US20160293596A1 (en) * | 2015-03-30 | 2016-10-06 | Texas Instruments Incorporated | Normally off iii-nitride transistor |
| JP2016207890A (ja) * | 2015-04-24 | 2016-12-08 | トヨタ自動車株式会社 | ヘテロ接合半導体装置 |
| US10211327B2 (en) | 2015-05-19 | 2019-02-19 | Intel Corporation | Semiconductor devices with raised doped crystalline structures |
| KR102399578B1 (ko) * | 2015-06-05 | 2022-05-17 | 램 리써치 코포레이션 | GaN 및 다른 III-V 족 재료들의 원자층 에칭 |
| EP3314659A4 (en) | 2015-06-26 | 2019-01-23 | INTEL Corporation | HETEROEPITAXISTRUCTURES WITH HIGH-TEMPERATURE-RESISTANT SUBSTRATE INTERMEDIATE MATERIAL |
| US9911817B2 (en) * | 2015-07-17 | 2018-03-06 | Cambridge Electronics, Inc. | Field-plate structures for semiconductor devices |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| DE102015118440A1 (de) * | 2015-10-28 | 2017-05-04 | Infineon Technologies Austria Ag | Halbleiterbauelement |
| WO2017111888A1 (en) * | 2015-12-21 | 2017-06-29 | Intel Corporation | Envelope-tracking control techniques for highly-efficient rf power amplifiers |
| WO2017111869A1 (en) | 2015-12-24 | 2017-06-29 | Intel Corporation | Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers |
| US10062776B2 (en) * | 2016-02-05 | 2018-08-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US9941398B2 (en) * | 2016-03-17 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer |
| WO2018004654A1 (en) * | 2016-07-01 | 2018-01-04 | Intel Corporation | Group iii-n transistors including source to channel heterostructure design |
| WO2018004650A1 (en) * | 2016-07-01 | 2018-01-04 | Intel Corporation | 1t-1r rram cell including group iii-n access transistor |
| US10068976B2 (en) * | 2016-07-21 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performance |
| CN106712829A (zh) * | 2016-11-28 | 2017-05-24 | 深圳天珑无线科技有限公司 | 一种天线切换方法和电路 |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10446544B2 (en) * | 2017-06-08 | 2019-10-15 | Qorvo Us, Inc. | Enhancement-mode/depletion-mode field-effect transistor GAN technology |
| KR102630424B1 (ko) * | 2017-06-15 | 2024-01-29 | 이피션트 파워 컨버젼 코퍼레이션 | GaN 스페이서 두께의 향상된 균일성을 위한 선택적 및 비선택적 에칭 층을 갖는 인핸스먼트-모드 GaN 트랜지스터 |
| WO2019066874A1 (en) * | 2017-09-28 | 2019-04-04 | Intel Corporation | VARIABLE CAPACITY DEVICE WITH MULTILAYER ELECTRODE BIDIMENSIONAL GAS (2DEG) |
| US12125888B2 (en) | 2017-09-29 | 2024-10-22 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
| US11233053B2 (en) | 2017-09-29 | 2022-01-25 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
| WO2019066995A1 (en) * | 2017-09-30 | 2019-04-04 | Intel Corporation | ENHANCED RF PERFORMANCE GROUP III (III-N) NITRIDE DEVICES AND METHODS OF MAKING SAME |
| CN110034186B (zh) * | 2018-01-12 | 2021-03-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于复合势垒层结构的iii族氮化物增强型hemt及其制作方法 |
| US10541313B2 (en) | 2018-03-06 | 2020-01-21 | Infineon Technologies Austria Ag | High Electron Mobility Transistor with dual thickness barrier layer |
| US10516023B2 (en) | 2018-03-06 | 2019-12-24 | Infineon Technologies Austria Ag | High electron mobility transistor with deep charge carrier gas contact structure |
| US11563098B2 (en) | 2018-06-22 | 2023-01-24 | Intel Corporation | Transistor gate shape structuring approaches |
| DE102018212736B4 (de) * | 2018-07-31 | 2022-05-12 | Christian-Albrechts-Universität Zu Kiel | Ferroelektrische Halbleitervorrichtung mit einer einen Mischkristall aufweisenden ferroelektrischen Speicherschicht und Verfahren zu deren Herstellung |
| US20200194551A1 (en) * | 2018-12-13 | 2020-06-18 | Intel Corporation | High conductivity source and drain structure for hemt devices |
| US11610971B2 (en) * | 2018-12-17 | 2023-03-21 | Intel Corporation | Cap layer on a polarization layer to preserve channel sheet resistance |
| US11302786B2 (en) * | 2019-04-04 | 2022-04-12 | Hrl Laboratories Llc | Miniature field plate T-gate and method of fabricating the same |
| JP7448314B2 (ja) * | 2019-04-19 | 2024-03-12 | 株式会社東芝 | 半導体装置 |
| CN112216738B (zh) * | 2019-07-09 | 2025-04-11 | 台湾积体电路制造股份有限公司 | 集成芯片及其形成方法 |
| CN112349773A (zh) * | 2019-08-07 | 2021-02-09 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
| CN118099203A (zh) | 2019-08-14 | 2024-05-28 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
| US11239802B2 (en) * | 2019-10-02 | 2022-02-01 | Wolfspeed, Inc. | Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance |
| CN110808211A (zh) * | 2019-11-08 | 2020-02-18 | 中国电子科技集团公司第十三研究所 | 斜型栅结构氧化镓场效应晶体管及其制备方法 |
| US20210399119A1 (en) * | 2020-06-23 | 2021-12-23 | Intel Corporation | Transition metal-iii-nitride alloys for robust high performance hemts |
| CN113972266B (zh) * | 2020-07-23 | 2024-10-01 | 安徽长飞先进半导体有限公司 | 隧穿增强型垂直结构的hemt器件 |
| WO2022169509A1 (en) | 2021-02-03 | 2022-08-11 | Lam Research Corporation | Etch selectivity control in atomic layer etching |
| US12615980B2 (en) | 2021-03-18 | 2026-04-28 | Lam Research Corporation | Etching of indium gallium zinc oxide |
| US20240072130A1 (en) * | 2022-08-29 | 2024-02-29 | Raytheon Company | T-gate transistor with mini field plate and angled gate stem |
| US20240266403A1 (en) * | 2023-02-03 | 2024-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer structure with interlayer buffer layers for high voltage device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006086398A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2008270794A (ja) * | 2007-03-29 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| WO2009066434A1 (ja) * | 2007-11-19 | 2009-05-28 | Nec Corporation | 電界効果トランジスタおよびその製造方法 |
| US8309987B2 (en) * | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
| WO2010151721A1 (en) * | 2009-06-25 | 2010-12-29 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
-
2012
- 2012-05-25 US US13/481,198 patent/US20130313561A1/en not_active Abandoned
-
2013
- 2013-04-29 TW TW102115230A patent/TW201407780A/zh unknown
- 2013-05-16 DE DE102013008512A patent/DE102013008512A1/de not_active Withdrawn
- 2013-05-23 JP JP2013108851A patent/JP2013247363A/ja active Pending
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