WO2009066434A1 - 電界効果トランジスタおよびその製造方法 - Google Patents

電界効果トランジスタおよびその製造方法 Download PDF

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Publication number
WO2009066434A1
WO2009066434A1 PCT/JP2008/003339 JP2008003339W WO2009066434A1 WO 2009066434 A1 WO2009066434 A1 WO 2009066434A1 JP 2008003339 W JP2008003339 W JP 2008003339W WO 2009066434 A1 WO2009066434 A1 WO 2009066434A1
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WO
WIPO (PCT)
Prior art keywords
layer
electron supply
supply layer
electron
recess
Prior art date
Application number
PCT/JP2008/003339
Other languages
English (en)
French (fr)
Inventor
Kazuki Ota
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009542470A priority Critical patent/JP5906004B2/ja
Priority to US12/742,587 priority patent/US8680580B2/en
Publication of WO2009066434A1 publication Critical patent/WO2009066434A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Abstract

電界効果トランジスタは、ＧａＮまたはＩｎＧａＮを含む電子走行層１０３、電子走行層１０３上のＩｎｘＡｌｙＧａ１－ｘ－ｙＮ（０≦ｘ<１、０<ｙ<１、０<ｘ＋ｙ<１）を含む第１の電子供給層１０４、第１の電子供給層１０４上のＩｎＡｌＮを含む第１のエッチングストッパ層１０５、第１のエッチングストッパ層１０５上のＩｎａＡｌｂＧａ１－ａ－ｂＮ（０≦ａ<１、０<ｂ<１、０<ａ＋ｂ<１）を含む第２の電子供給層１０６を備える。第２の電子供給層１０６および第１のエッチングストッパ層１０５には、これらを貫通し第１の電子供給層１０４表面を底面とする第１のリセス１１１が形成される。ゲート電極１０９は、第１のリセス１１１の底面を被覆し第１のリセス１１１内に配置される。第２の電子供給層１０６は第１の電子供給層１０４と電子走行層１０３との界面のうちゲート電極１０９に被覆されている第１のリセス１１１の底面の下方領域を除く領域と重なる。
PCT/JP2008/003339 2007-11-19 2008-11-17 電界効果トランジスタおよびその製造方法 WO2009066434A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009542470A JP5906004B2 (ja) 2007-11-19 2008-11-17 電界効果トランジスタおよびその製造方法
US12/742,587 US8680580B2 (en) 2007-11-19 2008-11-17 Field effect transistor and process for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-299383 2007-11-19
JP2007299383 2007-11-19

Publications (1)

Publication Number Publication Date
WO2009066434A1 true WO2009066434A1 (ja) 2009-05-28

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Country Status (3)

Country Link
US (1) US8680580B2 (ja)
JP (1) JP5906004B2 (ja)
WO (1) WO2009066434A1 (ja)

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JP2011018844A (ja) * 2009-07-10 2011-01-27 Sanken Electric Co Ltd 半導体装置
JP2011082216A (ja) * 2009-10-02 2011-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011142200A (ja) * 2010-01-07 2011-07-21 Toyota Central R&D Labs Inc 電界効果トランジスタ
US20110204379A1 (en) * 2010-02-22 2011-08-25 Sanken Electric Co., Ltd. Nitride semiconductor device and method of manufacturing the same
US20110241020A1 (en) * 2010-03-31 2011-10-06 Triquint Semiconductor, Inc. High electron mobility transistor with recessed barrier layer
JP2013247363A (ja) * 2012-05-25 2013-12-09 Triquint Semiconductor Inc 電荷誘導層を有するｉｉｉ族窒化物トランジスタ
WO2014097526A1 (ja) * 2012-12-20 2014-06-26 パナソニック株式会社 電界効果トランジスタおよびその製造方法
JP2015536570A (ja) * 2012-11-16 2015-12-21 マサチューセッツ インスティテュート オブ テクノロジー 半導体構造およびリセス形成のエッチング技術
JP2017168583A (ja) * 2016-03-15 2017-09-21 株式会社東芝 半導体装置
JP2018517280A (ja) * 2015-03-30 2018-06-28 日本テキサス・インスツルメンツ株式会社 ノーマリーオフｉｉｉ‐窒化物トランジスタ

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US10325774B2 (en) 2014-09-18 2019-06-18 Intel Corporation Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
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EP3213350A4 (en) 2014-10-30 2018-06-13 Intel Corporation Source/drain regrowth for low contact resistance to 2d electron gas in gallium nitride transistors
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KR102349040B1 (ko) 2015-06-26 2022-01-10 인텔 코포레이션 고온 안정 기판 계면 재료를 갖는 헤테로 에피택셜 구조체들
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US10658471B2 (en) 2015-12-24 2020-05-19 Intel Corporation Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers
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CN110034186B (zh) * 2018-01-12 2021-03-16 中国科学院苏州纳米技术与纳米仿生研究所 基于复合势垒层结构的iii族氮化物增强型hemt及其制作方法
JP2021120966A (ja) * 2018-04-27 2021-08-19 ソニーセミコンダクタソリューションズ株式会社 スイッチングトランジスタ及び半導体モジュール
CN110718589B (zh) * 2018-07-12 2024-04-16 纳姆实验有限责任公司 具有半导体器件的电子电路的异质结构
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TWI811562B (zh) * 2020-08-18 2023-08-11 新唐科技股份有限公司 半導體裝置的製造方法
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Publication number Priority date Publication date Assignee Title
JP2011018844A (ja) * 2009-07-10 2011-01-27 Sanken Electric Co Ltd 半導体装置
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JP2011082216A (ja) * 2009-10-02 2011-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011142200A (ja) * 2010-01-07 2011-07-21 Toyota Central R&D Labs Inc 電界効果トランジスタ
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JP5906004B2 (ja) 2016-04-20
US8680580B2 (en) 2014-03-25
JPWO2009066434A1 (ja) 2011-03-31
US20100270559A1 (en) 2010-10-28

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