JP2013140996A - 基板保持部材及び基板接合装置 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 354
- 230000008878 coupling Effects 0.000 claims abstract description 195
- 238000010168 coupling process Methods 0.000 claims abstract description 195
- 238000005859 coupling reaction Methods 0.000 claims abstract description 195
- 230000001105 regulatory effect Effects 0.000 claims abstract description 12
- 230000033228 biological regulation Effects 0.000 claims abstract description 4
- 230000035699 permeability Effects 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000001179 sorption measurement Methods 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000005304 joining Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000003825 pressing Methods 0.000 claims description 10
- 230000005489 elastic deformation Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 127
- 230000007246 mechanism Effects 0.000 description 52
- 238000003780 insertion Methods 0.000 description 22
- 230000037431 insertion Effects 0.000 description 22
- 238000001514 detection method Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 18
- 238000003384 imaging method Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000009471 action Effects 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- 238000013459 approach Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 230000005389 magnetism Effects 0.000 description 5
- 230000007723 transport mechanism Effects 0.000 description 5
- 239000000284 extract Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
【解決手段】位置合わせして積層された一対の基板を保持する基板保持部材であって、一対の基板の一方を保持する第1保持部材と、第1保持部材に連結された複数の被結合部材と、一方に対向させて一対の基板の他方を保持する第2保持部材と、被結合部材に作用する吸着力を有して、被結合部材の位置に対応して第2保持部材に連結された複数の結合部材と、吸着力を、一対の基板が位置合わせされるまで規制する吸着規制部とを備える。
【選択図】図22
Description
特願2007−281200 出願日 2007年10月30日
特願2008−199553 出願日 2008年8月1日
特願2008−199554 出願日 2008年8月1日
Claims (24)
- 位置合わせして積層された一対の基板を保持する基板保持部材であって、
前記一対の基板の一方を保持する第1保持部材と、
前記第1保持部材に連結された複数の被結合部材と、
前記一方に対向させて前記一対の基板の他方を保持する第2保持部材と、
前記被結合部材に作用する吸着力を有して、前記被結合部材の位置に対応して前記第2保持部材に連結された複数の結合部材と、
前記吸着力を、前記一対の基板が位置合わせされるまで規制する吸着規制部と
を備え、前記一対の基板が位置合わせして接合された後に前記被結合部材および前記結合部材が相互に吸着する基板保持部材。 - 前記被結合部材は磁性体を含み、
前記結合部材は磁石を含み、
前記結合部材は、磁力により前記被結合部材を吸着する吸着力を発生する請求項1に記載の基板保持部材。 - 前記複数の被結合部材または前記複数の結合部材の各々は、前記一対の基板の面方向と直交する方向に弾性的に支持する複数の弾性部材を介して前記第1保持部材または前記第2保持部材に連結される請求項2に記載の基板保持部材。
- 前記弾性部材は、磁性体を含んで前記被結合部材の一部をなす請求項3に記載の基板保持部材。
- 前記複数の弾性部材の各々は、
前記第1保持部材または前記第2保持部材に対して固定された固定部と、
前記被結合部材または前記結合部材に対して結合された結合部と
をそれぞれが有し、
前記結合部および前記固定部の一方の位置は、前記結合部および前記固定部の他方の位置に関して対称であり、
前記被結合部材および前記結合部材が結合した場合に弾性変形する
請求項3または請求項4に記載の基板保持部材。 - 前記弾性部材は、前記結合部または前記固定部に関して対称に、互いに間隔をおいて配置された一対のスリットを有する板バネである請求項5に記載の基板保持部材。
- 前記板バネは、前記一対のスリットに挟まれた領域の外側に、前記結合部または前記固定部に関して対称に配された一対の前記固定部または前記結合部を有する請求項6に記載の基板保持部材。
- 前記第1保持部材および前記第2保持部材の一方は円盤状の形状を有し、
前記板バネは、前記スリットの長手方向が当該円盤の径方向に沿うように配置される請求項6または請求項7に記載の基板保持部材。 - 前記第1保持部材および前記第2保持部材の一方は円盤状の形状を有し、
前記複数の結合部材および前記複数の被結合部材は、当該円盤の周方向についてそれぞれ等間隔に配置される請求項3から請求項8までのいずれかに記載の基板保持部材。 - 一対の基板を位置合わせして積層する基板接合装置であって、
前記一対の基板の一方を保持する第1保持部材を支持する第1保持部材支持部と、
前記第1保持部材に連結された複数の被結合部材と、
前記一方に対向させて前記一対の基板の他方を保持する第2保持部材を支持する第2保持部材支持部と、
前記被結合部材の位置に対応して前記第2保持部材に連結され、前記被結合部材に作用する吸着力を有する複数の結合部材と、
前記一対の基板を相互に位置合わせする位置合わせ駆動部と、
前記第1保持部材支持部および前記第2保持部材支持部の一方を他方に向かって駆動する積層駆動部と、
前記吸着力を、前記一対の基板が位置合わせされるまで規制する吸着規制部と
を備え、前記位置合わせ駆動部により前記一対の基板が位置合わせされ、前記積層駆動部により前記一対の基板が積層された後に、前記吸着規制部が前記被結合部材および前記結合部材の吸着の規制を解除する基板接合装置。 - 前記吸着規制部は、前記位置合わせ駆動部に設けられる請求項10に記載の基板接合装置。
- 前記被結合部材は磁性体を含み、
前記結合部材は磁石を含み、
前記結合部材は、磁力により前記被結合部材を吸着する吸着力を発生する請求項10または請求項11に記載の基板接合装置。 - 前記吸着規制部は、前記被結合部材または前記結合部材に当接しつつ、前記駆動部による駆動の方向に沿って移動する請求項12に記載の基板接合装置。
- 前記吸着規制部は、前記被結合部材または前記結合部材の一方を他方から遠ざけた状態を維持する隔離部である請求項12に記載の基板接合装置。
- 前記吸着規制部は、前記結合部材または前記被結合部材を弾性的に支持する弾性部材の弾性変形を抑制することにより前記被結合部材の吸着を規制する請求項12に記載の基板接合装置。
- 前記吸着規制部は、前記磁性体の透磁率よりも高い透磁率を有する材料により形成され、前記被結合部材および前記結合部材の間隔が所与の間隔になるまで、前記結合部材に発生する磁界を前記被結合部材から遠ざける請求項12に記載の基板接合装置。
- 前記吸着規制部は、前記一対の基板の面方向について前記結合部材の幾何学的中心に対して、対称な方向に移動する複数の部分を含む請求項16に記載の基板接合装置。
- 前記吸着規制部は、前記一対の基板の面方向について前記結合部材の幾何学的中心に面した位置に形成された貫通穴を有する請求項16または請求項17に記載の基板接合装置。
- 前記吸着規制部は、前記面方向について前記結合部材よりも大きな寸法を有して、前記吸着規制部が移動した場合に、前記結合部材を挿通させる貫通穴を有する請求項18に記載の基板接合装置。
- 前記結合部材は、前記一対の基板の面方向に分極し、且つ、互いに同極を対面させて配列された複数の永久磁石を含み、
前記吸着規制部は、前記複数の永久磁石の個々の異極を結ぶ位置と、前記複数の永久磁石のうち隣接する永久磁石の同極を結ぶ位置との間を移動する磁性体を含む請求項16に記載の基板接合装置。 - 請求項10から請求項20までのいずれかに記載された接合装置と、
前記接合装置において位置合わせして積層された一対の基板を加圧して貼り合わせる加圧装置と
を備える積層基板製造装置。 - 一対の基板を互いに位置合わせして積層する基板接合方法であって、
被結合部材を有する第1保持部材に前記一対の基板の一方を保持させる段階と、
前記被結合部材に作用する吸着力を発生する結合部材を有する第2保持部材に、前記一対の基板の一方に対向して前記一対の基板の他方を保持させる段階と、
前記一対の基板を相互に位置合わせする段階と、
前記吸着力を作用させて前記被結合部材および前記結合部材を吸着させ、前記第1保持部材および前記第2保持部材の間に、位置合わせされた前記一対の基板を積層した状態で保持する段階と
を含む基板接合方法。 - 請求項22に記載された基板接合方法に続いて、前記第1保持部材および前記第2保持部材を介して前記一対の基板を加圧して貼り合わせる段階を更に含む積層基板製造方法。
- 各々が素子および電極を有して互いに積層された一対の半導体基板を含む積層型半導体装置を製造する積層型半導体装置製造方法であって、
被結合部材を有する第1保持部材に前記一対の半導体基板の一方を保持させる段階と、
前記被結合部材に作用する吸着力を発生する結合部材を有する第2保持部材に、前記一対の半導体基板の一方に対向して前記一対の基板の他方を保持させる段階と、
前記一対の半導体基板の対応する電極を相互に位置合わせする段階と、
前記吸着力を作用させて前記被結合部材および前記結合部材を吸着させ、前記第1保持部材および前記第2保持部材の間に、位置合わせされた前記一対の半導体基板を積層した状態で保持する段階と
前記第1保持部材および前記第2保持部材を介して前記一対の半導体基板を加圧して貼り合わせる段階と
を含む積層型半導体装置製造方法。
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US20100206454A1 (en) | 2010-08-19 |
CN101874288B (zh) | 2013-04-10 |
KR20100072035A (ko) | 2010-06-29 |
TWI471971B (zh) | 2015-02-01 |
US20130157438A1 (en) | 2013-06-20 |
TW200937569A (en) | 2009-09-01 |
WO2009057710A1 (ja) | 2009-05-07 |
JP5402640B2 (ja) | 2014-01-29 |
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