TWI809408B - 加熱輔助覆晶接合裝置 - Google Patents

加熱輔助覆晶接合裝置 Download PDF

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TWI809408B
TWI809408B TW110119900A TW110119900A TWI809408B TW I809408 B TWI809408 B TW I809408B TW 110119900 A TW110119900 A TW 110119900A TW 110119900 A TW110119900 A TW 110119900A TW I809408 B TWI809408 B TW I809408B
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pressing
heating
chip
flip
assisted
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TW202249132A (zh
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盧威華
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國立屏東科技大學
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

一種加熱輔助覆晶接合裝置包含一半導體結構、一加熱源及一按壓遮罩元件，該半導體結構之一基板具有複數個導接墊，半導體結構之一晶片設置於該基板上方，該晶片具有複數個導接單元，各該導接單元接觸該基板之各該導接墊，該加熱源用以發出一加熱光線，該按壓遮罩元件具有一遮罩單元及複數個按壓單元，該加熱光線經由該遮罩單元之一開口照射該晶片，該些按壓單元位在該遮罩單元及該半導體結構之間，且各該按壓單元具有一彈性件及一按壓件，該彈性件之一端連接該遮罩單元，該彈性件之另一端連接該按壓件，該些按壓件抵壓該晶片之一背面。

Description

加熱輔助覆晶接合裝置
本發明是關於一種覆晶接合裝置，特別是關於一種加熱輔助覆晶接合裝置。
覆晶接合技術是先在基板上形成導接墊，在晶片上形成導接凸塊後，將晶片倒置並讓各個導接凸塊對準各個導接墊，最後透過熱風迴焊製程使該導接凸塊熔融與導接墊共晶連接而完成，由於覆晶接合技術製成之半導體結構具有體積小、傳輸速度快及連接腳數多等功效，已經成為半導體製程的主要封裝技術之一。但因為半導體先進製程的進步及目前電子設備要求輕薄短小的情況下，以多種不同材料堆疊而成且厚度相當薄的晶片在進行熱風迴焊製程時，容易因為不同材料的膨脹係數不同而產生翹曲(Warpage)的問題，翹曲會導致晶片之導接凸塊於熔融時未確實地接觸基板之導接墊而產生連接不良的情況。
本發明的主要目的在於以加熱源進行迴焊製程時，藉由按壓遮罩元件之按壓單元抵壓晶片，使晶片之導接單元能確實與基板之導接墊連接，同時按壓遮罩能夠遮蔽加熱源部分之加熱光線，以避免加熱源之溫度影響基板其他位置的電子電路元件。
本發明之一種加熱輔助覆晶接合裝置包含一半導體結構、一加熱源及一按壓遮罩元件，該半導體結構具有一基板及一晶片，該基板具有複數個導接墊，該晶片設置於該基板上方，該晶片具有複數個導接單元，各該導接單元接觸該基板之各該導接墊，該加熱源位在該半導體結構上方，且該加熱源用以發出一加熱光線，該按壓遮罩元件位在該半導體結構及該加熱源之間，該按壓遮罩元件具有一遮罩單元及複數個按壓單元，該遮罩單元具有一開口，該開口顯露該晶片，且該加熱光線經由該開口照射該晶片，該些按壓單元位在該遮罩單元及該半導體結構之間，且各該按壓單元具有一彈性件及一按壓件，該彈性件之一端連接該遮罩單元，該彈性件之另一端連接該按壓件，該些按壓件抵壓該晶片之一背面。
本發明藉由該按壓遮罩元件在迴焊製程中提供遮蔽，並同時對該半導體結構進行加壓，除了可避免迴焊製程之高溫影響該基板上的電子電路元件，還可確保該半導體結構之該基板及該晶片能夠在迴焊製程中確實接合。
請參閱第1圖，其為本發明之一第一實施例，一種加熱輔助覆晶接合裝置100的剖視圖，該加熱輔助覆晶接合裝置100包含一半導體結構110、一加熱源120、一按壓遮罩元件130、一支撐基座140及複數個溫度感測器150。該半導體結構110設置於該支撐基座140上，該按壓遮罩元件130位於該半導體結構110及該加熱源120之間，該加熱源120發出之一加熱光線121用以對該半導體結構110進行加熱迴焊，該按壓遮罩元件130用以遮蔽該加熱源120部分之該加熱光線121並同時對該半導體結構110進行加壓，以避免半導體結構110因為翹曲的問題而導致連接不良。
在本實施例中，該半導體結構110具有一基板111及複數個晶片112，該基板111具有複數個導接墊111a，該晶片112設置於該基板111上方，各該晶片112具有一正面112a、一背面112b及複數個導接單元112c，該正面112a朝向該基板111，該背面112b朝向該按壓遮罩元件130，該些導接單元112c設置於該晶片112之該正面112a。其中，該晶片112之各該導接單元112c可選自為一焊球或一凸塊，且該些導接單元112c是預先透過植球或凸塊製程形成於該晶片112之該正面112a，當該晶片112設置於該基板111上時，各該導接單元112c接觸該基板111之各該導接墊111a，以在迴焊製程中與各該導接墊111a接合後提供該晶片112與該基板111之間訊號傳遞路徑。
該加熱源120位在該半導體結構110上方，且該加熱源120用以發出該加熱光線121，該加熱光線121用以對該半導體結構110加熱而進行迴焊製程，使該晶片112之該些導接單元112c熔融而與該基板111之該導接墊111a連接，在本實施例中，該加熱源120為紅外線光源，該加熱光線121為紅外線，或在其他實施例中，該加熱源120亦可為雷射光。
該按壓遮罩元件130位在該半導體結構110及該加熱源120之間，在本實施例中，該按壓遮罩元件130具有一遮罩單元131及複數個按壓單元132，該遮罩單元131具有一上表面131a、一下表面131b及複數個開口131c，該上表面131a朝向該加熱源120，該下表面131b朝向該晶片112，該些開口131c貫通該上表面131a及該下表面131b，各該開口131c顯露各該晶片112，使該加熱源120之該加熱光線121可經由該些開口131c照射該些晶片112，以對該些晶片112進行加熱迴焊。此外，藉由該遮罩單元131的遮蔽，可限制該加熱光線121僅照射於該晶片112上，以避免該基板111的其他電子電路元件受到高溫的影響。較佳的，該開口131c的一寬度W1不小於各該晶片112的一寬度W2，以確保該加熱光線121可經由該開口131c照射到該晶片112之該背面112b。
該些按壓單元132位在該遮罩單元131及該半導體結構110之間，且各該按壓單元132具有一彈性件132a及一按壓件132b，該彈性件132a之一端連接該遮罩單元131之該下表面131b，該彈性件132a之另一端連接該按壓件132b，該些按壓件132b抵壓該晶片112之該背面112b，且由於該開口131c之該寬度W1不小於該晶片112之該寬度W2，各該彈性件132a連接該按壓件132b之一端延伸至該開口131c及該晶片112之間的一空間S中，以使該按壓件132b能夠按壓該晶片112，其中，該彈性件132a由具可撓性之材料製成，而能夠以彈力抵壓該晶片112，避免對該晶片112造成傷害。較佳的，各該按壓件132b為一球狀，以降低各該按壓件132b與該晶片112之該背面112b的接觸面積，避免該晶片112之該背面112b因為該些按壓件132b的按壓而產生刮痕。
在本實施例中，該支撐基座140為可移動之裝置，其用以帶動該基板111朝向該按壓遮罩元件130移動，該按壓遮罩元件130則固定不動，而能夠在該加熱光線121對該晶片112之該些導接單元112c迴焊加熱時，使該些按壓單元132對該晶片112加壓，以確保該些導接單元112c與該基板111之該些導接墊111a連接。在其他實施例中，該支撐基座140亦可為固定之機構，該按壓遮罩元件130則為可移動之裝置，相同地，在該按壓遮罩元件130朝向該半導體結構110移動時，該些按壓單元132對該晶片112加壓，同樣可確保該些導接單元112c與該基板111之該些導接墊111a連接。
該些溫度感測器150用以感測該半導體結構110之該基板111及該晶片112的一溫度，可即時的調整該加熱源120的強度，使迴焊製程的溫度達到設定，以確保該晶片112之該些導接單元112c完全熔融而與該基板111之該些導接墊111a共晶連接，另外，透過對該基板111及該晶片112的溫度感測，能夠避免該基板111上的電子電路元件因為迴焊溫度過高受到損害，進一步的提高製程良率。在其他實施例中，該溫度感測器150亦可僅對該基板111的溫度或僅對該晶片112的溫度進行感測，亦可監控迴焊製程的溫度，達到提高製程良率的功效。此外，該溫度感測器150可為接觸式或非接觸式的溫度感測器，該溫度感測器150的類型並非本發明之所限。
請參閱第2圖，其為該按壓單元132之一第二實施例，該按壓單元132具有一彈性臂132c及一彈簧部132d，該彈性臂132c之兩端分別連接該遮罩單元131之該下表面131b及該彈簧部132d之一端，該彈簧部132d之另一端連接該按壓件132b。本實施例透過該彈簧部132d各參數的設定，例如線徑、有效圈數、壓縮量、材料…等，能夠提供符合不同半導體結構110所需要的按壓力量，使得該按壓遮罩元件130在使用上能更加靈活。
請參閱第3圖，其為該按壓單元132之一第三實施例，其與第二實施例的差異在於各該按壓單元132具有複數個按壓件132b，且各該按壓單元132之該彈性件132a具有複數個彈簧部132d，該彈性臂132c之兩端分別連接該遮罩單元131之該下表面131b及該些彈簧部132d之一端，各該彈簧部132d之另一端連接各該按壓件132b。透過該些彈簧部132d及該些按壓件132b能夠使得該按壓單元132的有效按壓面積加大，而能夠對該晶片112均勻施壓，並能夠應用在該晶片112面積較大的產品。
本發明藉由該按壓遮罩元件130在迴焊製程中提供遮蔽，並同時對該半導體結構110進行加壓，除了可避免迴焊之高溫影響該基板111上的電子電路元件，還可確保該半導體結構110之該基板111及該晶片112能夠在迴焊製程中確實接合。
本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。
100:加熱輔助覆晶接合裝置 110:半導體結構 111:基板 111a:導接墊 112:晶片 112a:正面 112b:背面 112c:導接單元 120:加熱源 121:加熱光線 130:按壓遮罩元件 131:遮罩單元 131a:上表面 131b:下表面 131c:開口 132:按壓單元 132a:彈性件 132b:按壓件 132c:彈性臂 132d:彈簧部 140:支撐基座 W1:開口之寬度 W2:晶片之寬度 S:空間 150:溫度感測器
第1圖：依據本發明之一第一實施例，一加熱輔助覆晶接合裝置的剖視圖。 第2圖：依據本發明之一第二實施例，一按壓單元的示意圖。 第3圖：依據本發明之一第三實施例，一按壓單元的示意圖。
100:加熱輔助覆晶接合裝置
110:半導體結構
111:基板
111a:導接墊
112:晶片
112a:正面
112b:背面
112c:導接單元
120:加熱源
121:加熱光線
130:按壓遮罩元件
131:遮罩單元
131a:上表面
131b:下表面
131c:開口
132:按壓單元
140:支撐基座
W1:開口之寬度
W2:晶片之寬度
S:空間
150:溫度感測器

Claims (10)

  1. 一種加熱輔助覆晶接合裝置，其包含： 一半導體結構，具有一基板及一晶片，該基板具有複數個導接墊，該晶片設置於該基板上方，該晶片具有複數個導接單元，各該導接單元接觸該基板之各該導接墊； 一加熱源，位在該半導體結構上方，且該加熱源用以發出一加熱光線；以及 一按壓遮罩元件，位在該半導體結構及該加熱源之間，該按壓遮罩元件具有一遮罩單元及複數個按壓單元，該遮罩單元具有一開口，該開口顯露該晶片，且該加熱光線經由該開口照射該晶片，該些按壓單元位在該遮罩單元及該半導體結構之間，且各該按壓單元具有一彈性件及一按壓件，該彈性件之一端連接該遮罩單元，該彈性件之另一端連接該按壓件，該些按壓件抵壓該晶片之一背面。
  2. 如請求項1之加熱輔助覆晶接合裝置，其中該遮罩單元具有一上表面及一下表面，該上表面朝向該加熱源，該下表面朝向該晶片，該些按壓單元設置於該遮罩單元之該下表面。
  3. 如請求項2之加熱輔助覆晶接合裝置，其中各該按壓單元之該彈性件具有一彈性臂及一彈簧部，該彈性臂之兩端分別連接該遮罩單元之該下表面及該彈簧部之一端，該彈簧部之另一端連接該按壓件。
  4. 如請求項2之加熱輔助覆晶接合裝置，其中各該按壓單元具有複數個按壓件，且各該按壓單元之該彈性件具有一彈性臂及複數個彈簧部，該彈性臂之兩端分別連接該遮罩單元之該下表面及該些彈簧部之一端，各該彈簧部之另一端連接各該按壓件。
  5. 如請求項1、3或4其中一項之加熱輔助覆晶接合裝置，其中各該按壓件為一球狀。
  6. 如請求項1、3或4其中一項之加熱輔助覆晶接合裝置，其中各該彈性件之另一端延伸至該開口及該晶片之間的一空間中。
  7. 如請求項1之加熱輔助覆晶接合裝置，其中各該開口的一寬度不小於各該晶片的一寬度。
  8. 如請求項1之加熱輔助覆晶接合裝置，其中該晶片之各該導接單元可選自為一焊球或一凸塊。
  9. 如請求項1之加熱輔助覆晶接合裝置，其包含有一支撐基座，該基板設置於該支撐基座上，該支撐基座為可移動之裝置，以帶動該基板朝向該按壓遮罩元件移動，使該些按壓單元對該晶片加壓。
  10. 如請求項1之加熱輔助覆晶接合裝置，其包含有一溫度感測器，該溫度感測器用以感測該半導體結構之該基板或該晶片的一溫度。
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