JP7251926B2 - アラインされた基板ペアを扱うシステムと関連技術 - Google Patents
アラインされた基板ペアを扱うシステムと関連技術 Download PDFInfo
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- JP7251926B2 JP7251926B2 JP2018107789A JP2018107789A JP7251926B2 JP 7251926 B2 JP7251926 B2 JP 7251926B2 JP 2018107789 A JP2018107789 A JP 2018107789A JP 2018107789 A JP2018107789 A JP 2018107789A JP 7251926 B2 JP7251926 B2 JP 7251926B2
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- 239000000758 substrate Substances 0.000 title claims description 167
- 238000000034 method Methods 0.000 title description 47
- 125000006850 spacer group Chemical group 0.000 claims description 228
- 230000007246 mechanism Effects 0.000 claims description 49
- 230000033001 locomotion Effects 0.000 claims description 48
- 238000012545 processing Methods 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000006870 function Effects 0.000 claims description 3
- 230000036316 preload Effects 0.000 claims description 2
- 230000002250 progressing effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 148
- 238000012546 transfer Methods 0.000 description 62
- 239000012636 effector Substances 0.000 description 37
- 230000008569 process Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 17
- 230000000712 assembly Effects 0.000 description 14
- 238000000429 assembly Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 210000001331 nose Anatomy 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 210000003128 head Anatomy 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- -1 e.g. Chemical compound 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000005398 lithium aluminium silicate glass-ceramic Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
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Description
短期間だけ接合装置内でアイドル温度(例えば、500℃と比較すると約300℃)にさらされる。結果的に、移動装置100は、より小さい機械応力と熱応力を受け、より少ないメンテナンスですむようになり、効率を増し、コストを減らすように作用する。
Claims (24)
- 一対の基板を接合するために構成された基板処理システムであって、
処理チャンバと、
前記処理チャンバ内に配置され、かつ、スペーサを有するスペーサアセンブリと、を備え、
前記スペーサは、
前記一対の基板の間に差し込まれるように構成されており、かつ、
前記基板処理システム内で、前記一対の基板を移動するように構成され、前記処理チャンバ内に配置され、アラインされた基板を移動する移動装置のガイド機構に接触するように構成されており、
前記スペーサは、前記一対の基板の間に差し込まれる前に、前記ガイド機構に接触すると、前記処理チャンバ内で進行を止めるように構成され、
前記ガイド機構は、前記スペーサの参照停止位置として機能する、基板処理システム。 - 前記スペーサアセンブリは、前記一対の基板の外向き径方向熱膨張適合性を補正する径方向のプレローディングを提供するように構成されたバイアス部材をさらに備えている、請求項1に記載の基板処理システム。
- 前記スペーサアセンブリはさらに、
ドライバと、
前記ドライバと駆動自在に接続されたシャフトと、
前記シャフト及び前記スペーサと駆動自在に接続されたベアリングと、を備え、
前記ドライバは、前記ベアリングと前記スペーサとの直線動作を提供する方法で、前記シャフトの直線動作を提供するように構成されている、請求項2に記載の基板処理システム。 - 前記シャフトを介する実装部の動作が前記ベアリングの動作を提供するように、前記シャフトと前記ベアリングとを駆動自在に接続する前記実装部を備える基板処理システムであって、
前記ベアリングは、前記実装部に実装され、
前記実装部と前記シャフトは、前記実装部と前記シャフトとの間に移動性接続部を提供する、一定のクリアランスを有し、
前記プレローディングの開始点は、前記移動性接続部で提供される、請求項3に記載の基板処理システム。 - 前記バイアス部材は、スプリング部材を有し、
前記スプリング部材は、前記実装部に接続された第1端部と、前記実装部を超えて伸びる前記シャフトの一部と相互作用する第2端部と、を有する、請求項4に記載の基板処理システム。 - 前記スペーサアセンブリは、前記スペーサにプレローディング力を加えて、前記スペーサが前記一対の基板の間に差し込まれるときの前記スペーサの偏向を軽減する、請求項1~5のいずれか1つに記載の基板処理システム。
- 一対の基板を扱うように構成された装置が組み込まれており、
前記装置は、
フレーム部材と、
前記フレーム部材に接続されたスペーサアセンブリと、を備え、
前記スペーサアセンブリは、
前記一対の基板の間に差し込まれるように構成された第1スペーサと、
基板処理装置の第2スペーサの進行に対する参照停止点を提供するように構成されたガイド機構と、を備えている、請求項1~6のいずれか1つに記載の基板処理システム。 - 前記ガイド機構は、略L字形状で有り、
前記略L字形状は、前記第1スペーサに添えられ、かつ、前記第1スペーサの脚部に略垂直にアラインされた第1脚部と、
前記第1スペーサの前記脚部と略平行にアラインされた第2脚部と、を有する請求項7に記載のシステム。 - 前記ガイド機構と前記第1スペーサは、モノリシック構造であり、
前記ガイド機構は、略L字形状であり、
前記略L字形状は、前記第1スペーサから広がり、かつ、前記第1スペーサの脚部と略垂直にアラインされた第1脚部と、
前記第1スペーサの前記脚部と略平行にアラインされた第2脚部と、を有する、請求項7又は8に記載のシステム。 - 前記第2スペーサに対する前記参照停止点を提供するように構成されている状態で、前記ガイド機構は、前記第2スペーサと物理的に接触し、かつ、前記第2スペーサが垂直方向に進むことを止めるように構成されている、請求項7~9のいずれか1つに記載のシステム。
- 前記一対の基板の外向き径方向の熱膨張適合性を補正する径方向のプレローディングを提供するバイアス部材をさらに有する、請求項7~10のいずれか1つに記載のシステム。
- 前記スペーサアセンブリはさらに、
ドライバと、
前記ドライバと駆動自在に接続されたシャフトと、
前記シャフト及び前記第1スペーサと駆動自在に接続されたベアリングと、を有し、
前記ドライバは、前記ベアリングと前記第1スペーサの直線運動を提供する方法で、前記シャフトの直線運動を提供するように構成されている、請求項11に記載のシステム。 - 前記シャフトと前記ベアリングを駆動自在に接続するアーム部を有しており、
前記シャフトを介する前記アーム部の動きは、前記ベアリングの動きを提供するためのものであり、
前記アーム部と前記シャフトは、前記アーム部と前記シャフトの間に移動性接続部を提供する所定のクリアランスを有しており、
前記プレローディングの開始点は、前記移動性接続部に提供される、請求項12に記載のシステム。 - 前記バイアス部材は、スプリング部材を備えており、
前記スプリング部材は、前記ベアリングと接続された第1端部と
前記アーム部を超えて伸びる前記シャフトの一部と相互作用する第2端部と、を有する、請求項13に記載のシステム。 - 基板処理チャンバ内で離隔して配置されている一対の基板に圧縮力を加えるように構成されたピンが提供されており、
前記ピンは、ピンチップと、脚部とを備えており、
前記脚部は、前記脚部の第1端部に配置され、かつ、前記ピンチップに付随するように構成された先端接触機構と、
前記第1端部の反対の端部であって、前記脚部の第2端部に配置され、かつ、前記一対の基板に付随するように構成された略平坦な基部と、を有する、請求項1~14のいずれか1に記載のシステム。 - 前記先端接触機構は、前記脚部の前記第1端部から前記ピンチップに向けて広がる球体形状である、請求項15に記載のシステム。
- 前記脚部の非圧縮状態では、前記脚部と前記ピンチップとの間に隙間があり、かつ、
前記脚部の圧縮状態では、前記先端接触機構が前記ピンチップに付随するように、
前記脚部が前記ピンチップと関連して動くことができる、請求項15又は16に記載のシステム。 - 前記ピンがプレロードをかけられ、上側中心位置で中心付けできるように、前記ピンは径方向に適合するように構成される、請求項15~17のいずれか1つに記載のシステム。
- 前記脚部は、前記一対の基板の一方の中心と付随するように構成される、請求項15~18のいずれか1つに記載のシステム。
- 前記ピンチップと前記脚部の径方向の動きを可能にし、かつ、力を中心付けるためにプレロードを提供するように構成されたO-リングを有する、請求項15~19のいずれか1つに記載のシステム。
- 前記ピンチップと前記脚部の径方向の動きを可能にし、前記ピンによるジンバル動きを提供するように構成されたベアリングをさらに有する、請求項15~20のいずれか1つに記載のシステム。
- 前記一対の基板に圧縮力を負荷するように構成された請求項15~21のいずれか1に記載のシステムであって、
前記ピンは、前記圧縮力が、1つ以上の周辺チャックによって前記一対の基板に加えられた圧力を釣り合わせる方法と、前記圧縮力が前記一対の基板に関して均一に配分される方法とのうち、少なくとも一方の方法で前記一対の基板に前記圧縮力を負荷するように構成されたシステム。 - 3つのピンが提供され、
前記3つのピンは、周方向に配置される、請求項15~22のいずれか1つに記載のシステム。 - 前記ピンは、等間隔に配置される、請求項23に記載のシステム。
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Publication number | Publication date |
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US20170372925A1 (en) | 2017-12-28 |
CN109003932B (zh) | 2023-10-31 |
DE102018112915A1 (de) | 2018-12-06 |
CN109003932A (zh) | 2018-12-14 |
SG10201804808TA (en) | 2019-01-30 |
TW201903919A (zh) | 2019-01-16 |
JP2019024081A (ja) | 2019-02-14 |
AT520028A3 (de) | 2021-07-15 |
US11183401B2 (en) | 2021-11-23 |
NL2021059B1 (en) | 2019-04-19 |
AT520028B1 (de) | 2023-07-15 |
KR20180133337A (ko) | 2018-12-14 |
TWI765054B (zh) | 2022-05-21 |
AT520028A2 (de) | 2018-12-15 |
NL2021059A (en) | 2018-12-11 |
KR102514884B1 (ko) | 2023-03-28 |
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