JP2013138139A - Iii族窒化物半導体素子およびその製造方法 - Google Patents
Iii族窒化物半導体素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 170
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 158
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000005530 etching Methods 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 41
- 230000015572 biosynthetic process Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 36
- 230000001681 protective effect Effects 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 9
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 4
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 10
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Abstract
【解決手段】本発明のIII族窒化物半導体素子100は、III族窒化物半導体層110の(000−1)面側の所定領域120に、ドーム型形状の丸みを有する複数の凸部124を有し、この所定領域120の上面に電極128を有することを特徴とする。
【選択図】図1
Description
(1)III族窒化物半導体層を有するIII族窒化物半導体素子であって、前記III族窒化物半導体層の(000−1)面側の所定領域に、ドーム型形状の丸みを有する複数の凸部を有し、前記所定領域の上面に電極を有することを特徴とするIII族窒化物半導体素子。
図1を用いて、本発明の一実施形態によるIII族窒化物半導体素子100(以下、単に「素子」100ともいう。)を説明する。素子100は、サポート体116と、このサポート体116上に順次位置するp型III族窒化物半導体層114(以下、単に「p層」という。)、活性層112およびn型III族窒化物半導体層110(以下、単に「n層」という。)と、を有する。n層110上にはn側電極128が位置し、n層と電気的に接続している。また、サポート体116は導電性を有し、p層114と電気的に接続するp側電極を兼ねている。なお、n層110の外周上に位置する超格子バッファ層108およびAlNバッファ層106、ならびに各半導体層の周囲およびサポート体116の表面の周縁部を覆うマスク118の詳細は後述する。
上記素子100を好適に製造する、本発明の一実施形態によるIII族窒化物半導体素子の製造方法を、図2および図3により説明する。まず、図2(A)に示すように、成長用基板102上にリフトオフ層104を形成し、その上にAlNバッファ層106、超格子バッファ層108を順次形成し、さらにその上に、n型III族窒化物半導体層110、活性層112およびp型III族窒化物半導体層114をこの順に形成する。また、超格子バッファ層108は、その上に形成するn層110との格子不整合を緩和し、n層110の結晶品質を向上させるために形成する。
図2および図3に示す製造方法で、図1に示すIII族窒化物半導体LED素子を作製した。具体的には、まず、成長用のサファイア基板上に、MOCVD法を用いてAlN単結晶層(厚さ:1μm)を成長させて、AlN(0001)テンプレートを作製した。この成長用基板上に、スパッタ法を用いて、Sc(厚さ:8nm)で成膜し、その後、MOCVD装置内で窒化処理を施し、リフトオフ層としてのScN層を形成した。
n層表面の形成プロセスを表1に記載のものとした以外は実施例1と同様にして、III族窒化物半導体LED素子を作製した。
n層表面の形成プロセスを表1に記載のものとし、Ti/Al電極の形成時に、SiO2の形成および除去を行わなかった以外は、実施例1と同様にして、III族窒化物半導体LED素子を作製した。この場合、電極形成部位のレジスト除去時に2.38質量%TMAH溶液がn層に接触するため、n層形成プロセスの後さらに電極形成部位のn層表面に異方性エッチングが施される。
各試験例について、走査型電子顕微鏡(SEM)により、n層表面の形成プロセスの後n側電極形成前に、n層表面を斜め視野から観察した。また、n側電極形成さらに熱処理後に、n側電極形成面付近の断面を撮影した。図6〜10に、それぞれ実施例1、比較例3、比較例4、実施例6、実施例7のSEM画像を代表して示す。(A)がn側電極形成前の斜め視野の画像、(B)がn側電極形成後、熱処理後の断面の画像である。図11には、比較例5のn側電極形成前の斜め視野の画像を示す。
1辺が100μmの正方形の電極を、50μmの間隔をあけて配置した。その電極間に20mAの電流を流した際の電圧値を測定した。結果を表1に示す。
102 成長用基板
104 リフトオフ層
106 AlNバッファ層
108 超格子バッファ層
110 n型(第2導電型)III族窒化物半導体層
112 活性層
114 p型(第1導電型)III族窒化物半導体層
116 サポート体(p側電極)
118 マスク
120 所定領域
122 多角錐の突起
124 凸部
126 谷の底部
128 n側電極
130 保護膜
132 レジスト
134 電極形成部位
(1)III族窒化物半導体層を有するIII族窒化物半導体素子であって、前記III族窒化物半導体層の(000−1)面側の所定領域に、ドーム型形状の丸みを有し、表面が(000−1)面以外の面からなる複数の凸部を有し、前記所定領域の上面に電極を有することを特徴とするIII族窒化物半導体素子。
Claims (13)
- III族窒化物半導体層を有するIII族窒化物半導体素子であって、
前記III族窒化物半導体層の(000−1)面側の所定領域に、ドーム型形状の丸みを有する複数の凸部を有し、
前記所定領域の上面に電極を有することを特徴とするIII族窒化物半導体素子。 - 隣接する前記凸部により形成される谷の底部が角になっている請求項1に記載のIII族窒化物半導体素子。
- 前記凸部の表面は、ファセット面が特定できないランダム面である請求項1または2に記載のIII族窒化物半導体素子。
- サポート体と、
該サポート体上に順次位置する第1導電型III族窒化物半導体層、活性層および第2導電型III族窒化物半導体層と、
を有するIII族窒化物半導体素子であって、
前記第2導電型III族窒化物半導体層の、前記サポート体と反対側が(000−1)面側であり、
前記第2導電型III族窒化物半導体層の(000−1)面側の所定領域に、ドーム型形状の丸みを有する複数の凸部を有し、
前記所定領域の上面に電極を有することを特徴とするIII族窒化物半導体素子。 - 前記第2導電型がn型である請求項4に記載のIII族窒化物半導体素子。
- 前記電極がTi/Al電極である請求項4または5に記載のIII族窒化物半導体素子。
- III族窒化物半導体層を有するIII族窒化物半導体素子の製造方法であって、
前記III族窒化物半導体層の(000−1)面側の所定領域に異方性エッチングを施し、多角錐形の突起を複数形成する工程と、
前記所定領域に等方性エッチングを施し、前記突起をドーム型形状の丸みを有する複数の凸部へと変化させる工程と、
前記凸部を有する所定領域の上面に電極を形成する工程と、
を有することを特徴とするIII族窒化物半導体素子の製造方法。 - 前記異方性エッチングは、前記突起の表面を(000−1)面以外のファセット面とするウェットエッチングである請求項7に記載のIII族窒化物半導体素子の製造方法。
- 前記ファセット面は(10−1−1)面、(10−1−2)面、および(10−1−3)面のいずれかである請求項8に記載のIII族窒化物半導体素子の製造方法。
- 前記異方性エッチングには、アルカリ性の溶液を用いる請求項8または9に記載のIII族窒化物半導体素子の製造方法。
- 前記等方性エッチングは、前記凸部の表面をファセット面が特定できないランダム面とするドライエッチングである請求項8〜10のいずれか1項に記載のIII族窒化物半導体素子の製造方法。
- 前記電極を形成する工程は、
前記所定領域の上面に保護膜を形成する工程と、
前記保護膜上にレジストを塗布し、フォトリソグラフィー法によって電極形成部位のレジストを除去する工程と、
前記電極形成部位の前記保護膜を除去する工程と、
前記電極形成部位に電極を形成する工程と、
を有する請求項7〜11のいずれか1項に記載のIII族窒化物半導体素子の製造方法。 - 成長用基板上にリフトオフ層、第2導電型III族窒化物半導体層、活性層および第1導電型III族窒化物半導体層をこの順に形成する工程と、
前記第1導電型III族窒化物半導体層上に、サポート体を形成する工程と、
前記リフトオフ層を除去することで、前記成長用基板を前記第2導電型III族窒化物半導体層から剥離する工程と、
(000−1)面側である、露出した前記第2導電型III族窒化物半導体層の所定領域に異方性エッチングを施し、多角錐形の突起を複数形成する工程と、
前記所定領域に等方性エッチングを施し、前記突起をドーム型形状の丸みを有する複数の凸部へと変化させる工程と、
前記凸部を有する所定領域の上面に電極を形成する工程と、
を有することを特徴とするIII族窒化物半導体素子の製造方法。
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