JP2013115260A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】実施形態に係わる半導体装置は、第1乃至第3の半導体層12−1〜12−3と、第1乃至第3の半導体層12−1〜12−3のうちの1つを選択するレイヤー選択トランジスタ15(LST)とを備える。第1のノーマリーオン領域17−1は、第1の半導体層12−1内において第1乃至第3のゲート電極16−1〜16−3に隣接するチャネルをノーマリーオンチャネルにし、第2のノーマリーオン領域17−2は、第2の半導体層12−2内において第2乃至第4のゲート電極16−2〜16−4に隣接するチャネルをノーマリーオンチャネルにし、第3のノーマリーオン領域17−3は、第3の半導体層12−3内において第3乃至第5のゲート電極16−3〜16−5に隣接するチャネルをノーマリーオンチャネルにする。
【選択図】図1
Description
図1は、第1の実施例に係わる半導体装置を示している。図2は、図1のII−II線に沿う断面図である。
図16は、第2の実施例に係わる半導体装置を示している。図17は、図16のXVII−XVII線に沿う断面図である。
図18は、第3の実施例に係わる半導体装置を示している。図19は、図18のXIX−XIX線に沿う断面図である。
図33は、第4の実施例に係わる半導体装置を示している。図34は、図33のXXXIV−XXXIV線に沿う断面図である。
実施形態に係わる半導体装置の適用例を説明する。
実施形態によれば、デザインルールが縮小されても、半導体基板上に積み重ねられた複数の半導体層のうちの1つを正確に選択することができる。
Claims (14)
- 半導体基板と、
前記半導体基板上の絶縁層と、
前記絶縁層の表面に垂直な第1の方向に、前記絶縁層の表面から順番に積み重ねられ、前記絶縁層の表面に平行な第2の方向に延び、互いに絶縁される第1乃至第nの半導体層(nは2以上の自然数)と、
前記第2の方向の一端において前記第1乃至第nの半導体層に接続される共通電極と、
前記第1乃至第nの半導体層をチャネルとし、前記第1乃至第nの半導体層のうちの1つを選択するレイヤー選択トランジスタとを具備し、
前記レイヤー選択トランジスタは、
前記第2の方向に、前記第2の方向の一端から順番に配置され、前記第1乃至第nの半導体層の前記第1及び第2の方向に垂直な第3の方向にある側面に沿って前記第1の方向に延びる第1乃至第mのゲート電極(m=n+k、kは偶数)と、
前記第iの半導体層(iは1〜nのうちの1つ)内において前記第i乃至第(i+k)のゲート電極に隣接するチャネルを、前記第i乃至第(i+k)のゲート電極の電位に依存しないノーマリーオンチャネルにする第iのノーマリーオン領域と
を備える半導体装置。 - 半導体基板と、
前記半導体基板上の絶縁層と、
前記絶縁層の表面に垂直な第1の方向に、前記絶縁層の表面から順番に積み重ねられ、前記絶縁層の表面に平行な第2の方向に延び、前記第2の方向の一端が階段形状を有し、互いに絶縁される第1乃至第nの半導体層(nは2以上の自然数)と、
前記第1乃至第nの半導体層の前記第2の方向の一端をそれぞれ覆う第1乃至第nの拡散防止層と、
前記第1乃至第nの拡散防止層を介して前記第1乃至第nの半導体層に接続される共通半導体層と、
前記共通半導体層に接続される共通電極と、
前記第1乃至第nの半導体層及び前記共通半導体層をチャネルとし、前記第1乃至第nの半導体層のうちの1つを選択するレイヤー選択トランジスタとを具備し、
前記レイヤー選択トランジスタは、
前記第2の方向に、前記第2の方向の一端から順番に配置され、前記第1乃至第nの半導体層及び前記共通半導体層の前記第1及び第2の方向に垂直な第3の方向にある側面に沿って前記第1の方向に延びる第1乃至第mのゲート電極(m=n+k、kは自然数)と、
前記第iの半導体層(iは1〜nのうちの1つ)内において前記第i乃至第(i+k)のゲート電極に隣接するチャネルを、前記第i乃至第(i+k)のゲート電極の電位に依存しないノーマリーオンチャネルにする第iのノーマリーオン領域と
を備え、
前記第gのゲート電極(gは1〜n−1のうちの1つ)は、前記第gの拡散防止層と前記第(g+1)の拡散防止層の間に配置され、前記第n乃至第mのゲート電極は、前記第nの拡散防止層よりも前記第1乃至第nの半導体層側に配置される半導体装置。 - 前記第iの半導体層を選択するとき、前記第i乃至第(i+k)のゲート電極に、それらに隣接するチャネルをオフチャネルにし得るオフ電位を印加し、それ以外のゲート電極に、それらに隣接するチャネルをオンチャネルにし得るオン電位を印加する請求項1又は2に記載の半導体装置。
- 前記第1乃至第mのゲート電極のピッチをPとしたとき、前記レイヤー選択トランジスタの前記第2の方向の大きさは、P×(n+k−1)であり、前記nは、4以上である請求項1に記載の半導体装置。
- 前記第1乃至第mのゲート電極のピッチをPとしたとき、前記レイヤー選択トランジスタの前記第2の方向の大きさは、P×(n+k−1)であり、前記nは、3以上である請求項2に記載の半導体装置。
- 前記第1乃至第nの半導体層は、多結晶シリコン層であり、前記第iのノーマリーオン領域は、砒素を含み、前記第1乃至第mのゲート電極のピッチは、160nm以下である請求項1又は2に記載の半導体装置。
- 前記第1乃至第nの半導体層の前記第3の方向にある側面のうち、前記第1乃至第mのゲート電極に覆われていない領域に、前記第1乃至第nの半導体層の抵抗値よりも低い抵抗値を持つ低抵抗領域が設けられる請求項1又は2に記載の半導体装置。
- 前記第1乃至第nの半導体層は、絶縁層又は空洞により互いに絶縁される請求項1又は2に記載の半導体装置。
- 前記第2の方向の他端において前記第1乃至第nの半導体層に接続される複数のメモリセルをさらに具備し、
前記複数のメモリセルの各々は、電荷蓄積層内の電荷量により閾値が変化するセルトランジスタであり、前記第1乃至第nの半導体層は、前記複数のメモリセルのチャネルとして用いられる請求項1又は2に記載の半導体装置。 - 前記第2の方向の他端において前記第1乃至第nの半導体層に接続される複数のメモリセルをさらに具備し、
前記複数のメモリセルの各々は、電圧又は電流により抵抗値が変化する抵抗変化素子であり、前記第1乃至第nの半導体層は、前記複数のメモリセルの各々に前記電圧又は前記電流を供給する導電線として用いられる請求項1又は2に記載の半導体装置。 - 前記拡散防止層は、前記第2の方向の厚さが1nm以下の絶縁層である請求項2に記載の半導体装置。
- 前記拡散防止層は、金属層である請求項2に記載の半導体装置。
- 請求項1に記載の半導体装置の製造方法において、
前記第iのノーマリーオン領域を、不純物の注入により前記第iの半導体層内の前記第(i+(k/2))のゲート電極に隣接するチャネルに形成する工程と、
前記第iのノーマリーオン領域を形成した後の前記不純物の拡散により、前記第iのノーマリーオン領域を、前記第2の方向の両側に、前記第1乃至第mのゲート電極のピッチPのj倍(jは自然数)以上、(j+1)倍未満伸張させる工程と、
但し、k=j×2である
を具備する半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記第iのノーマリーオン領域を、不純物の注入により前記第iの半導体層内の前記第iのゲート電極に隣接するチャネルに形成する工程と、
前記第iのノーマリーオン領域を形成した後の前記不純物の拡散により、前記第iのノーマリーオン領域を、前記第2の方向の片側に、前記第1乃至第mのゲート電極のピッチPのj倍(jは自然数)以上、(j+1)倍未満伸張させる工程と、
但し、k=jである
を具備する半導体装置の製造方法。
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