JP2013112575A - 炭化珪素半導体装置の製造方法 - Google Patents
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Abstract
【解決手段】炭化珪素半導体装置100の製造方法は以下の工程を有する。第1の主表面1との第2の主表面2とを有する炭化珪素基板80が準備される。第1の主表面1に電極が形成される。炭化珪素基板80は六方晶の結晶構造を有し、第1の主表面1の{0001}面に対するオフ角が±8°以内であり、第1の主表面1は、炭化珪素のバンドギャップ以上のエネルギーを有する励起光が照射された場合に、第1の主表面1に生ずる750nm以上の波長域における発光領域3の密度が1×104cm-2以下であるような特性を有する。
【選択図】図7
Description
図1に示すように、本実施の形態の炭化珪素基板80は、六方晶の結晶構造を有する炭化珪素基板80である。炭化珪素基板80は、側面と、側面に取り囲まれた第1の主表面1と第2の主表面2とを有する。便宜上、第1の主表面1を裏面とし、第2の主表面2を表面とする。六方晶のポリタイプは、好ましくは4Hである。
まず、炭化珪素基板80の第1の主表面1へ励起光LEが入射される。励起光のエネルギーは炭化珪素のバンドギャップ以上のエネルギーである。これにより第1の主表面1上においてフォトルミネッセンス光LLの発光領域が生じる。フォトルミネッセンス光LLのうちフィルタ434を透過したものである透過光LHが、カメラ435によって像として観測される。フィルタ434が、たとえば750nm以上の周波数を特に透過するようなフィルターである場合、第1の主表面1上において750nm以上の波長を有するフォトルミネッセンス光LLの発光領域が観測される。この場合、発光領域の密度が転位の密度と密接に関連している。また、フィルタ434が、たとえば390nm付近の波長域を特に透過するようなフィルターである場合、第1の主表面1上において390nm付近の波長を有するフォトルミネッセンス光LLの発光領域が観測される。
本実施の形態における炭化珪素基板80の第1の主表面1は、炭化珪素のバンドギャップ以上のエネルギーを有する励起光LEが照射された場合に、第1の主表面1に生ずる750nm以上の波長域における発光領域3の密度が1×104cm-2以下であるような特性を有している。より好ましくは、第1の主表面1に生ずる750nm以上の波長域における発光領域3の密度が1×103cm-2以下である。
図6に示すように、本実施の形態の炭化珪素半導体装置100は、MOSFETであり、具体的には、縦型DiMOSFET(Double Implanted MOSFET)である。MOSFETは、エピタキシャル基板90、酸化膜126、ソース電極111、上部ソース電極127、ゲート電極110、およびドレイン電極を有する。エピタキシャル基板90は、炭化珪素基板80、バッファ層121、耐圧保持層122、p領域123、n+領域124、およびp+領域125を有する。
図1を参照して、炭化珪素基板形成工程(図7:S110)が実施される。炭化珪素基板形成工程は、第1の主表面1と第1の主表面1と反対側の第2の主表面2とを有する炭化珪素基板80が準備される。炭化珪素基板80は、実施の形態1で説明した特性を有している。
Claims (5)
- 第1の主表面と前記第1の主表面と反対側の第2の主表面とを有する炭化珪素基板を準備する工程と、
前記第1の主表面に電極を形成する工程とを備え、
前記炭化珪素基板は六方晶の結晶構造を有し、
前記第1の主表面の{0001}面に対するオフ角が±8°以内であり、
前記第1の主表面は、炭化珪素のバンドギャップ以上のエネルギーを有する励起光が照射された場合に、前記第1の主表面に生ずる750nm以上の波長域における発光領域の密度が1×104cm-2以下であるような特性を有する、炭化珪素半導体装置の製造方法。 - 前記第2の主表面上にエピタキシャル層を形成する工程をさらに備えた、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板を準備する工程は、前記第1の主表面に対して炭化珪素のバンドギャップ以上のエネルギーを有する励起光を照射しながら、前記第1の主表面に生ずる750nm以上の波長域における前記発光領域の密度を測定する工程を含む、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記第1の主表面は、炭化珪素のバンドギャップ以上のエネルギーを有する励起光が照射された場合に、前記第1の主表面に生じる390nmの波長域における非発光領域の密度が1×104cm-2以下であるような特性を有する、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板を準備する工程は、前記第1の主表面に対して炭化珪素のバンドギャップ以上のエネルギーを有する励起光を照射しながら、前記第1の主表面に生じる390nmの波長域における前記非発光領域の密度を測定する工程を含む、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
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JP2011261395A JP5853648B2 (ja) | 2011-11-30 | 2011-11-30 | 炭化珪素半導体装置の製造方法 |
CN201280053966.0A CN103946431B (zh) | 2011-11-30 | 2012-10-30 | 制造碳化硅半导体器件的方法 |
DE112012004966.7T DE112012004966B4 (de) | 2011-11-30 | 2012-10-30 | Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung |
PCT/JP2012/077938 WO2013080723A1 (ja) | 2011-11-30 | 2012-10-30 | 炭化珪素半導体装置の製造方法 |
US13/686,173 US8859387B2 (en) | 2011-11-30 | 2012-11-27 | Method for manufacturing silicon carbide semiconductor device |
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JP2016025241A (ja) * | 2014-07-22 | 2016-02-08 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2019111507A1 (ja) * | 2017-12-08 | 2019-06-13 | 住友電気工業株式会社 | 炭化珪素基板 |
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JP5898341B2 (ja) * | 2012-01-06 | 2016-04-06 | 中国科学院物理研究所 | 4H−SiC結晶で製造された非線形光学デバイス |
JP5834179B2 (ja) * | 2013-04-16 | 2015-12-16 | パナソニックIpマネジメント株式会社 | 炭化珪素半導体装置の製造方法 |
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JPH10335750A (ja) * | 1997-06-03 | 1998-12-18 | Sony Corp | 半導体基板および半導体装置 |
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Patent Citations (4)
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JP2006147848A (ja) * | 2004-11-19 | 2006-06-08 | Japan Aerospace Exploration Agency | 半導体試料の欠陥評価方法及び装置 |
JP2007318031A (ja) * | 2006-05-29 | 2007-12-06 | Central Res Inst Of Electric Power Ind | 炭化珪素半導体素子の製造方法 |
JP2011220744A (ja) * | 2010-04-06 | 2011-11-04 | Nippon Steel Corp | 炭化珪素バルク単結晶基板の欠陥検査方法、及びこの方法を用いた炭化珪素バルク単結晶基板の欠陥検査システム、並びに欠陥情報付き炭化珪素バルク単結晶基板 |
JP2011222750A (ja) * | 2010-04-09 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハの製造方法及びこの方法で得られた炭化珪素単結晶ウェハ |
Cited By (3)
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JP2016025241A (ja) * | 2014-07-22 | 2016-02-08 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2019111507A1 (ja) * | 2017-12-08 | 2019-06-13 | 住友電気工業株式会社 | 炭化珪素基板 |
US11342418B2 (en) | 2017-12-08 | 2022-05-24 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate |
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CN103946431A (zh) | 2014-07-23 |
US8859387B2 (en) | 2014-10-14 |
DE112012004966B4 (de) | 2024-02-29 |
JP5853648B2 (ja) | 2016-02-09 |
DE112012004966T5 (de) | 2014-08-21 |
CN103946431B (zh) | 2016-09-21 |
US20130137198A1 (en) | 2013-05-30 |
WO2013080723A1 (ja) | 2013-06-06 |
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