JP2013084901A - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP2013084901A JP2013084901A JP2012153158A JP2012153158A JP2013084901A JP 2013084901 A JP2013084901 A JP 2013084901A JP 2012153158 A JP2012153158 A JP 2012153158A JP 2012153158 A JP2012153158 A JP 2012153158A JP 2013084901 A JP2013084901 A JP 2013084901A
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- temperature
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- heat treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
【解決手段】半導体ウェハーWのソース・ドレイン領域にシリコンなどのイオンを注入し、そのイオン注入領域150を非晶質化する。非晶質化されたイオン注入領域150にニッケル膜158を成膜する。ニッケル膜158が成膜された半導体ウェハーWにフラッシュランプから第1照射を行ってその表面温度を予備加熱温度T1から目標温度T2にまで1ミリ秒以上20ミリ秒以下にて昇温する。続いて、フラッシュランプから第2照射を行って半導体ウェハーWの表面温度を目標温度T2から±25℃以内の範囲内に1ミリ秒以上100ミリ秒以下維持する。これにより、ニッケルシリサイドが縦方向に優先的に成長する。
【選択図】図11
Description
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
21 シャッター板
22 スライド駆動機構
31 パルス発生器
32 波形設定部
33 入力部
61 チャンバー側部
62 凹部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプター
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 IGBT
97 トリガー回路
111 基材
150 イオン注入領域
155 点欠陥
158 ニッケル膜
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (8)
- シリコンの基板を加熱してシリサイドを成長させる熱処理方法であって、
前記基板にイオンを注入してそのイオン注入領域を非晶質化させる注入工程と、
非晶質化された前記イオン注入領域に金属膜を成膜する成膜工程と、
前記金属膜が成膜された前記基板を所定の予備加熱温度にて加熱する予備加熱工程と、
前記基板に光を照射することによって前記基板の表面温度を前記予備加熱温度から目標温度にまで1ミリ秒以上20ミリ秒以下にて昇温する昇温工程と、
前記昇温工程の後、前記基板に光を照射することによって前記基板の表面温度を前記目標温度から±25℃以内の範囲内に1ミリ秒以上100ミリ秒以下維持する温度維持工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記成膜工程では、ニッケルを成膜し、
前記予備加熱温度は300℃以下であり、
前記目標温度は600℃以上1100℃以下であることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記成膜工程では、チタンを成膜し、
前記予備加熱温度は500℃以下であり、
前記目標温度は600℃以上1100℃以下であることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記成膜工程では、コバルトを成膜し、
前記予備加熱温度は500℃以下であり、
前記目標温度は600℃以上1100℃以下であることを特徴とする熱処理方法。 - 前記成膜工程では、タングステンを成膜し、
前記予備加熱温度は700℃以下であり、
前記目標温度は900℃以上1100℃以下であることを特徴とする熱処理方法。 - 請求項1から請求項5のいずれかに記載の熱処理方法において、
前記昇温工程および前記温度維持工程では、フラッシュランプから前記基板にフラッシュ光を照射することを特徴とする熱処理方法。 - 請求項6記載の熱処理方法において、
前記昇温工程および前記温度維持工程では、コンデンサから前記フラッシュランプへの電荷の供給をスイッチング素子によって断続することにより前記フラッシュランプの発光出力を制御することを特徴とする熱処理方法。 - 請求項1から請求項7のいずれかに記載の熱処理方法において、
前記注入工程では、窒素、アルゴン、シリコン、および、ゲルマニウムからなる群から選択された1のイオンを注入することを特徴とする熱処理方法。
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JP2012153158A JP5955670B2 (ja) | 2011-09-26 | 2012-07-09 | 熱処理方法 |
US13/606,281 US8664116B2 (en) | 2011-09-26 | 2012-09-07 | Heat treatment method for growing silicide |
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JP2011209107 | 2011-09-26 | ||
JP2011209107 | 2011-09-26 | ||
JP2012153158A JP5955670B2 (ja) | 2011-09-26 | 2012-07-09 | 熱処理方法 |
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JP2013084901A true JP2013084901A (ja) | 2013-05-09 |
JP5955670B2 JP5955670B2 (ja) | 2016-07-20 |
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Cited By (2)
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JP2016058668A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社Screenホールディングス | 半導体製造方法および半導体製造装置 |
US9741576B2 (en) | 2015-08-26 | 2017-08-22 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method and heat treatment apparatus |
Families Citing this family (5)
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TWI566300B (zh) | 2011-03-23 | 2017-01-11 | 斯克林集團公司 | 熱處理方法及熱處理裝置 |
US20140042152A1 (en) * | 2012-08-08 | 2014-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Variable frequency microwave device and method for rectifying wafer warpage |
US20140057399A1 (en) * | 2012-08-24 | 2014-02-27 | International Business Machines Corporation | Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7179531B2 (ja) | 2018-08-28 | 2022-11-29 | 株式会社Screenホールディングス | 熱処理方法 |
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JP2016058668A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社Screenホールディングス | 半導体製造方法および半導体製造装置 |
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US8664116B2 (en) | 2014-03-04 |
JP5955670B2 (ja) | 2016-07-20 |
US20130078802A1 (en) | 2013-03-28 |
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