JP2013012560A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
- Publication number
- JP2013012560A JP2013012560A JP2011143728A JP2011143728A JP2013012560A JP 2013012560 A JP2013012560 A JP 2013012560A JP 2011143728 A JP2011143728 A JP 2011143728A JP 2011143728 A JP2011143728 A JP 2011143728A JP 2013012560 A JP2013012560 A JP 2013012560A
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor module
- wiring pattern
- main
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/495—Material
- H01L2224/49505—Connectors having different materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Abstract
【解決手段】複数の絶縁基板20,20′の各々に搭載されるIGBT等の半導体スイッチング素子50,50′の各主電極52,52′が導体部材45により電気的に接続される。これにより、半導体スイッチング素子の接合容量と寄生インダクタンスとによる共振電圧の発生を抑制することができる。
【選択図】 図1
Description
12 樹脂ケース
20,20′ 絶縁基板
22,22′ 配線パターン
23,23′ コレクタ用配線パターン
24,24′ エミッタ用配線パターン
25,25′ ゲート用配線パターン
26,26′ 絶縁基板間接続
30,30′,32,32′ 主端子
35,35′,36,36′ 制御端子
41,41′ エミッタ電極と端子を接続するアルミワイヤ
42,42′ 制御端子とゲート電極を接続するアルミワイヤ
43,43′ 制御端子とエミッタ電極を接続するアルミワイヤ
45,45′ エミッタ電極どうしを接続するアルミワイヤ
46,46′ ゲート電極とゲート配線パターンを接続するアルミワイヤ
47,47′ 絶縁基板間接続用配線パターンとIGBTエミッタ電極を接続するアルミワイヤ
48,48′ 絶縁基板間接続用配線パターンとダイオードアノード電極を接続するアルミワイヤ
49 絶縁基板間のコレクタ配線パターン接続用するアルミワイヤ
50,50′ IGBT
51,51′ ゲート電極
52,52′ エミッタ電極
55,55′ ダイオード
56,56′ アノード電極
60 電源
62 ゲートドライバ
65 負荷インダクタンス
Claims (5)
- 第一の絶縁基板と、
第二の絶縁基板と、
前記第一の絶縁基板に搭載され、第一の主電極と第二の主電極を備える第一の半導体スイッチング素子と、
前記第二の絶縁基板に搭載され、第三の主電極と第四の主電極を備える第二の半導体スイッチング素子と、
前記第一の主電極と電気的に接続される第一の主端子と、
前記第二の主電極と電気的に接続される第二の主端子と、
前記第三の主電極が電気的に接続される第三の主端子と、
前記第四の主電極が電気的に接続される第四の主端子と、
を備えるパワー半導体モジュールにおいて、
前記第一の主電極と前記第三の主電極とを電気的に接続する、少なくとも一つの導体部材を有することを特徴とするパワー半導体モジュール。 - 請求項1に記載のパワー半導体モジュールにおいて、
前記導体部材の一端が前記第一の主電極に接続され、前記導体部材の他端が前記第3の主電極に接続されることを特徴とするパワー半導体モジュール。 - 請求項1に記載のパワー半導体モジュールにおいて、
前記第一の絶縁基板上に設けられる第一の配線パターンと、
前記第二の絶縁基板上に設けられる第二の配線パターンと、
を備え、
前記第一の主電極と前記第一の配線パターンとの間、前記第三の主電極と前記第二の配線パターンとの間、並びに前記第一の配線パターンと前記第二の配線パターンとの間が、前記導体部材によって電気的に接続されることを特徴とするパワー半導体モジュール。 - 請求項1ないし3のいずれか一項に記載のパワー半導体モジュールにおいて、
前記第一の絶縁基板上に設けられ、前記第二の主電極および前記第二の主端子と電気的に接続される第三の配線パターンと、
前記第二の絶縁基板上に設けられ、前記第四の主電極および前記第四の主端子と電気的に接続される第四の配線パターンと、を備え、
前記第一の配線パターンと前記第二の配線パターンとを電気的に接続する他の導体部材を備えることを特徴とするパワー半導体モジュール。 - 請求項1ないし4のいずれか一項に記載のパワー半導体モジュールにおいて、
前記第一の主端子と前記第三の主端子とが電気的に接続される第一の共通主端子と、
前記第二の主端子と前記第四の主端子とが電気的に接続される第二の共通主端子と、
を備えることを特徴とするパワー半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011143728A JP5637944B2 (ja) | 2011-06-29 | 2011-06-29 | パワー半導体モジュール |
US13/533,273 US9000601B2 (en) | 2011-06-29 | 2012-06-26 | Power semiconductor module |
EP12173902.3A EP2541596B1 (en) | 2011-06-29 | 2012-06-27 | Power semiconductor module |
CN201210219367.3A CN102856308B (zh) | 2011-06-29 | 2012-06-28 | 功率半导体模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011143728A JP5637944B2 (ja) | 2011-06-29 | 2011-06-29 | パワー半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013012560A true JP2013012560A (ja) | 2013-01-17 |
JP5637944B2 JP5637944B2 (ja) | 2014-12-10 |
Family
ID=46465076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011143728A Active JP5637944B2 (ja) | 2011-06-29 | 2011-06-29 | パワー半導体モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US9000601B2 (ja) |
EP (1) | EP2541596B1 (ja) |
JP (1) | JP5637944B2 (ja) |
CN (1) | CN102856308B (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016184667A (ja) * | 2015-03-26 | 2016-10-20 | 住友電気工業株式会社 | 半導体装置 |
JP2017162866A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
JP2017162884A (ja) * | 2016-03-07 | 2017-09-14 | トヨタ自動車株式会社 | 半導体装置 |
DE112015006984T5 (de) | 2015-09-29 | 2018-07-12 | Mitsubishi Electric Corporation | Halbleitervorrichtung und halbleitermodul, das mit derselben versehen ist |
WO2018193929A1 (ja) * | 2017-04-19 | 2018-10-25 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
WO2019044748A1 (ja) * | 2017-09-04 | 2019-03-07 | 三菱電機株式会社 | 半導体モジュール及び電力変換装置 |
JP2020501353A (ja) * | 2016-11-25 | 2020-01-16 | アーベーベー・シュバイツ・アーゲー | パワー半導体モジュール |
WO2020054806A1 (ja) * | 2018-09-14 | 2020-03-19 | 富士電機株式会社 | 半導体装置 |
WO2020158057A1 (ja) * | 2019-01-30 | 2020-08-06 | 株式会社日立パワーデバイス | パワー半導体モジュールおよびそれを用いた電力変換装置 |
JP2020155501A (ja) * | 2019-03-18 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
JPWO2020170553A1 (ja) * | 2019-02-18 | 2021-10-14 | 富士電機株式会社 | 半導体装置 |
JP2022536792A (ja) * | 2019-06-14 | 2022-08-18 | ウルフスピード インコーポレイテッド | パワーエレクトロニクス用のパッケージ |
JP7361672B2 (ja) | 2020-10-27 | 2023-10-16 | 三菱電機株式会社 | 半導体装置 |
WO2023248718A1 (ja) * | 2022-06-24 | 2023-12-28 | 住友電気工業株式会社 | 半導体装置 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8847328B1 (en) * | 2013-03-08 | 2014-09-30 | Ixys Corporation | Module and assembly with dual DC-links for three-level NPC applications |
JP2015142059A (ja) * | 2014-01-30 | 2015-08-03 | 株式会社日立製作所 | パワー半導体モジュール |
JP6245365B2 (ja) | 2014-07-03 | 2017-12-13 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
JP6413523B2 (ja) * | 2014-09-09 | 2018-10-31 | 富士電機株式会社 | 半導体装置 |
WO2016084241A1 (ja) * | 2014-11-28 | 2016-06-02 | 日産自動車株式会社 | ハーフブリッジパワー半導体モジュール及びその製造方法 |
US9660643B2 (en) | 2015-05-28 | 2017-05-23 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method and apparatus to improve power device reliability |
US9584116B2 (en) | 2015-05-28 | 2017-02-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method and apparatus for current/power balancing |
JP6062565B1 (ja) * | 2015-05-29 | 2017-01-18 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
US9923560B2 (en) * | 2016-04-13 | 2018-03-20 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method and apparatus for current/power balancing |
CN108028646B (zh) * | 2016-05-19 | 2021-05-11 | 富士电机株式会社 | 绝缘栅型半导体装置以及绝缘栅型半导体装置的制造方法 |
US10116303B2 (en) * | 2016-07-01 | 2018-10-30 | Toyota Motor Engineering & Manufacturing North America, Inc. | Parallel devices having balanced switching current and power |
US10187050B2 (en) * | 2017-04-12 | 2019-01-22 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method and apparatus for balancing current and power |
JP6838243B2 (ja) | 2017-09-29 | 2021-03-03 | 日立Astemo株式会社 | 電力変換装置 |
JP2019068648A (ja) * | 2017-10-02 | 2019-04-25 | 株式会社豊田自動織機 | インバータ装置 |
US11515253B2 (en) * | 2018-01-26 | 2022-11-29 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module |
DE102020208755A1 (de) | 2020-07-14 | 2022-01-20 | Zf Friedrichshafen Ag | Halbbrückenmodul für einen Inverter eines elektrischen Antriebs eines Elektrofahrzeugs oder eines Hybridfahrzeugs und Inverter für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs |
EP4030604A1 (de) * | 2021-01-18 | 2022-07-20 | Siemens Aktiengesellschaft | Stromrichter mit mindestens zwei leistungshalbleitermodulen |
EP4243070A1 (en) * | 2022-03-11 | 2023-09-13 | Hitachi Energy Switzerland AG | Power module and method for manufacturing a power module |
CN115346948B (zh) * | 2022-10-14 | 2023-04-07 | 吉光半导体(绍兴)有限公司 | 一种半桥模块 |
CN115985910B (zh) * | 2023-03-22 | 2023-06-02 | 烟台台芯电子科技有限公司 | 一种igbt半桥功率模块 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009278772A (ja) * | 2008-05-14 | 2009-11-26 | Toyota Industries Corp | インバータモジュール |
JP2010088299A (ja) * | 2000-08-28 | 2010-04-15 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4138192B2 (ja) | 1999-12-27 | 2008-08-20 | 三菱電機株式会社 | 半導体スイッチ装置 |
JP4484400B2 (ja) | 2000-08-28 | 2010-06-16 | 三菱電機株式会社 | 半導体装置 |
US6552429B2 (en) | 2000-08-28 | 2003-04-22 | Mitsubishi Denki Kabushiki Kaisha | Power switching semiconductor device with suppressed oscillation |
JP2002141465A (ja) | 2000-10-31 | 2002-05-17 | Toshiba Corp | 電力用半導体モジュール |
JP3673776B2 (ja) * | 2002-07-03 | 2005-07-20 | 株式会社日立製作所 | 半導体モジュール及び電力変換装置 |
JP4142539B2 (ja) | 2003-09-25 | 2008-09-03 | 三菱電機株式会社 | 電力用半導体装置 |
JP4720756B2 (ja) | 2007-02-22 | 2011-07-13 | トヨタ自動車株式会社 | 半導体電力変換装置およびその製造方法 |
-
2011
- 2011-06-29 JP JP2011143728A patent/JP5637944B2/ja active Active
-
2012
- 2012-06-26 US US13/533,273 patent/US9000601B2/en active Active
- 2012-06-27 EP EP12173902.3A patent/EP2541596B1/en active Active
- 2012-06-28 CN CN201210219367.3A patent/CN102856308B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010088299A (ja) * | 2000-08-28 | 2010-04-15 | Mitsubishi Electric Corp | 半導体装置 |
JP2009278772A (ja) * | 2008-05-14 | 2009-11-26 | Toyota Industries Corp | インバータモジュール |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016184667A (ja) * | 2015-03-26 | 2016-10-20 | 住友電気工業株式会社 | 半導体装置 |
DE112015006984T5 (de) | 2015-09-29 | 2018-07-12 | Mitsubishi Electric Corporation | Halbleitervorrichtung und halbleitermodul, das mit derselben versehen ist |
US10361136B2 (en) | 2015-09-29 | 2019-07-23 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor module provided with same |
JP2017162866A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
JP2017162884A (ja) * | 2016-03-07 | 2017-09-14 | トヨタ自動車株式会社 | 半導体装置 |
JP7210446B2 (ja) | 2016-11-25 | 2023-01-23 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | パワー半導体モジュール |
JP2020501353A (ja) * | 2016-11-25 | 2020-01-16 | アーベーベー・シュバイツ・アーゲー | パワー半導体モジュール |
JPWO2018193929A1 (ja) * | 2017-04-19 | 2019-12-26 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
CN110495087A (zh) * | 2017-04-19 | 2019-11-22 | 三菱电机株式会社 | 半导体模块以及电力变换装置 |
WO2018193929A1 (ja) * | 2017-04-19 | 2018-10-25 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
CN110495087B (zh) * | 2017-04-19 | 2021-03-23 | 三菱电机株式会社 | 半导体模块以及电力变换装置 |
WO2019044748A1 (ja) * | 2017-09-04 | 2019-03-07 | 三菱電機株式会社 | 半導体モジュール及び電力変換装置 |
JPWO2019044748A1 (ja) * | 2017-09-04 | 2020-07-02 | 三菱電機株式会社 | 半導体モジュール及び電力変換装置 |
US11063025B2 (en) | 2017-09-04 | 2021-07-13 | Mitsubishi Electric Corporation | Semiconductor module and power conversion device |
JP7036221B2 (ja) | 2018-09-14 | 2022-03-15 | 富士電機株式会社 | 半導体装置 |
JPWO2020054806A1 (ja) * | 2018-09-14 | 2021-03-11 | 富士電機株式会社 | 半導体装置 |
US11171122B2 (en) | 2018-09-14 | 2021-11-09 | Fuji Electric Co., Ltd. | Semiconductor device |
WO2020054806A1 (ja) * | 2018-09-14 | 2020-03-19 | 富士電機株式会社 | 半導体装置 |
JP2020124030A (ja) * | 2019-01-30 | 2020-08-13 | 株式会社 日立パワーデバイス | パワー半導体モジュールおよびそれを用いた電力変換装置 |
WO2020158057A1 (ja) * | 2019-01-30 | 2020-08-06 | 株式会社日立パワーデバイス | パワー半導体モジュールおよびそれを用いた電力変換装置 |
JPWO2020170553A1 (ja) * | 2019-02-18 | 2021-10-14 | 富士電機株式会社 | 半導体装置 |
JP7447979B2 (ja) | 2019-02-18 | 2024-03-12 | 富士電機株式会社 | 半導体装置 |
US11456244B2 (en) | 2019-02-18 | 2022-09-27 | Fuji Electric Co., Ltd. | Semiconductor device |
JP7201066B2 (ja) | 2019-02-18 | 2023-01-10 | 富士電機株式会社 | 半導体装置 |
JP2020155501A (ja) * | 2019-03-18 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
JP7309396B2 (ja) | 2019-03-18 | 2023-07-18 | 株式会社東芝 | 半導体装置 |
JP7320083B2 (ja) | 2019-06-14 | 2023-08-02 | ウルフスピード インコーポレイテッド | パワーエレクトロニクス用のパッケージ |
US11756910B2 (en) | 2019-06-14 | 2023-09-12 | Wolfspeed, Inc. | Package for power electronics |
US11887953B2 (en) | 2019-06-14 | 2024-01-30 | Wolfspeed, Inc. | Package for power electronics |
JP2022536792A (ja) * | 2019-06-14 | 2022-08-18 | ウルフスピード インコーポレイテッド | パワーエレクトロニクス用のパッケージ |
JP7361672B2 (ja) | 2020-10-27 | 2023-10-16 | 三菱電機株式会社 | 半導体装置 |
WO2023248718A1 (ja) * | 2022-06-24 | 2023-12-28 | 住友電気工業株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102856308A (zh) | 2013-01-02 |
CN102856308B (zh) | 2015-10-21 |
JP5637944B2 (ja) | 2014-12-10 |
EP2541596B1 (en) | 2020-05-06 |
US9000601B2 (en) | 2015-04-07 |
EP2541596A1 (en) | 2013-01-02 |
US20130001805A1 (en) | 2013-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5637944B2 (ja) | パワー半導体モジュール | |
US9685879B2 (en) | Power semiconductor module and power conversion device | |
JP4277169B2 (ja) | 電力用半導体モジュール | |
JP5724314B2 (ja) | パワー半導体モジュール | |
US8836080B2 (en) | Power semiconductor module | |
US8934277B2 (en) | Semiconductor system with at least one three-level electric power inverter circuit | |
US20140334203A1 (en) | Power converter and method for manufacturing power converter | |
US10134718B2 (en) | Power semiconductor module | |
JP6202195B2 (ja) | 半導体装置 | |
JP2013045974A (ja) | 半導体モジュール | |
US9177948B2 (en) | Switching element unit | |
US9117789B2 (en) | Semiconductor device | |
JP2010016947A (ja) | 電力変換装置のパワーモジュール | |
US20150326221A1 (en) | Switching element unit | |
JP4872345B2 (ja) | 電力変換装置のインバータモジュール | |
JP2020124030A (ja) | パワー半導体モジュールおよびそれを用いた電力変換装置 | |
JP3896940B2 (ja) | 半導体装置 | |
US20160036343A1 (en) | Semiconductor device | |
JP5024439B2 (ja) | 半導体装置 | |
JP5119741B2 (ja) | スイッチングモジュール | |
JP2005191233A (ja) | パワーモジュール | |
US20240030079A1 (en) | Switching device and switching module | |
JP2018182850A (ja) | 電力変換装置 | |
JP5899947B2 (ja) | パワー半導体モジュールおよび電力変換装置 | |
US20240106349A1 (en) | Switching module and inverter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130612 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130917 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131121 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20131122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140602 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140624 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140818 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140924 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141021 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5637944 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |