CN106856669B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN106856669B
CN106856669B CN201580001109.XA CN201580001109A CN106856669B CN 106856669 B CN106856669 B CN 106856669B CN 201580001109 A CN201580001109 A CN 201580001109A CN 106856669 B CN106856669 B CN 106856669B
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conductive part
terminal
conductive
semiconductor device
main electrode
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CN106856669A (zh
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神山悦宏
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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Abstract

[课题]提供一种能够谋求小型化，配线电阻很小并且效率很高的半导体装置。[解决方法]实施方式中的半导体装置1包括：绝缘基板2；导电部3，朝第一方向延伸；导电部4，从导电部3开始远离第二方向，并且朝第一方向延伸；多个导电部5，在导电部3和导电部4之间沿第一方向并排；高边开关11,12,13，被安装在导电部3上；低边开关14,15,16，分别被安装在相对应的导电部5上；多个信号端子，沿着第一方向被排列为与多个导电部5之间存在导电部3；电源端子21，与导电部3电气连接；接地端子22，与导电部4电气连接；输出端子23,24,25，分别与相对应的导电部5电连接，在绝缘基板2的另一端侧沿第一方向被排列，通过导电部4并且跨过沿第一方向延伸的直线L。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置及其制造方法。
背景技术
以往，已知一种逆变器(inverter)装置作为半导体装置，将从直流电源输入的直流电力转换为交流电力并输出。逆变器装置例如是用来将直流电压转换为三相交流电压并且驱动三相电机(motor)。对于这样的半导体装置，近年来，越发在寻求小型化以及高效率化。
在专利文献一中记载有将电感(inductance)降低和装置的小型化作为目的的逆变器装置。在该逆变器装置中，电源端子(逆变器输入端子)或接地端子(逆变器接地端子)都没有被捆成一个，被排列在一个方向上(参照专利文献一的图20)。
在专利文献二中记载有将减少损失或者噪声作为目的的逆变器装置。在该逆变器装置中，与电源端子电气连接的电源模块(Block)和被接地(Ground)的接地模块被邻接配置(参照专利文献二的图15)。
先行技术文献
专利文献
专利文献一日本特开2011-250491号公报
专利文献二日本特开2014-72316号公报
发明内容
然而，在专利文献一的逆变器装置中，由于电源端子或接地端子没有被捆成一个，因此宽度变大，导致难以实行小型化。另外，在专利文献二的逆变器装置中，由于电源模块和被接地的接地模块被邻接配置，因此电流路径变长从而配线电阻变大，导致存在效率低下的问题。
因此，本发明的目的是提供一种能够谋求小型化，配线电阻很小并且效率很高的半导体装置。
本发明涉及的半导体装置
是一种将直流电力转换为交流电力的半导体装置，
其特征在于，包括：绝缘基板；
第一导电部，被设置在所述绝缘基板上朝第一方向延伸；
第二导电部，被设置在所述绝缘基板上，从所述第一导电部开始远离与所述第一方向不同的第二方向，并且朝所述第一方向延伸；
多个第三导电部，被设置在所述绝缘基板上，在所述第一导电部和所述第二导电部之间沿所述第一方向并排；
多个第一开关，具有第一主电极，第二主电极以及控制电极，沿所述第一方向被安装在所述第一导电部上，并且所述第一主电极与所述第一导电部电气连接；
多个第二开关，具有第四主电极以及控制电极，分别被安装在相对应的所述第三导电部上，所述第三主电极与所述第一开关的所述第二主电极电气连接，所述第四主电极与所述第二导电部电气连接；
多个信号端子，沿着所述第一方向被排列为与所述多个第三导电部之间存在所述第一导电部；
电源端子，与所述第一导电部电气连接，被配置在设有所述多个信号端子的所述绝缘基板的一端侧；
接地端子，与所述第二导电部电气连接，被配置在所述绝缘基板的所述一端侧；
多个输出端子，分别与相对应的所述第三导电部电气连接，在所述绝缘基板的作为所述一端侧的反对侧的另一端侧沿所述第一方向被排列，通过所述第二导电部并且跨过沿所述第一方向延伸的直线。
另外，在所述碳化硅半导体装置中，
所述第二开关的所述第四主电极与所述第二导电部通过导电金属线从而电气连接，所述导电金属线的一端与所述第四主电极相连接，且在所述第二导电部中，另一端与被夹在相邻的输出端子间的区域相连接亦可。
另外，在所述碳化硅半导体装置中，
所述多个信号端子的前端部沿所述第一方向被配置为交错状亦可。
另外，在所述碳化硅半导体装置中，
所述电源端子以及所述接地端子的前端部相对于所述多个信号端子被配置为交错状亦可。
另外，在所述碳化硅半导体装置中，
所述电源端子，所述接地端子以及所述输出端子中的至少一个具有对所述绝缘基板的角落部的导电部回避的平面形状亦可。
另外，在所述碳化硅半导体装置中，
所述平面形状为L字型亦可。
本发明涉及的半导体装置的制造方法，
是一种将直流电力转换为交流电力的半导体装置的制造方法，
其特征在于，包括：配线板准备工序，该配线板具有：第一导电部，朝第一方向延伸；第二导电部，远离与第一方向不同的第二方向，并且朝第一方向延伸；多个第三导电部，在第一导电部和第二导电部之间沿第一方向并排；
引线框架准备工序，该引线框架具有：多个信号端子；包含电源端子以及接地端子的第一端子群；包含多个输出端子的第二端子群；
装载工序，在所述第一导电部上经由膏状焊料将多个第一开关沿所述第一方向装载，在所述各个第三导电部上经由膏状焊料将第二开关装载；
位置对准工序，将所述配线板与所述引线框架对准位置使得所述电源端子的底部，所述接地端子的底部，以及所述输出端子的底部分别在所述第一导电部上，在与第二导电部相连接且朝所述第二方向延伸的第四导电部上，以及在所述第三导电部上经由膏状焊料从而相接；
接合工序，通过回流焊处理，使所述电源端子，所述接地端子以及所述输出端子分别与所述第一导电部，所述第二导电部以及所述第三导电部相接合；
以及键合工序，将所述第二导电部和所述第二开关的主电极通过导电金属线相连接。
另外，在所述碳化硅半导体装置的制造方法中，
所述键合工序具有：第一连接工序，将所述导电金属线的一端与所述第二开关的所述主电极相连接；第二连接工序，在所述第一连接工序之后，将所述导电金属线的另一端与在所述第二开关中被夹在相邻的所述输出端子间的区域相连接。
【发明效果】
在本发明涉及的半导体装置中，包括：第一导电部，朝第一方向延伸；第二导电部，远离与第一方向不同的第二方向，并且朝第一方向延伸；多个第三导电部，在第一导电部和第二导电部之间沿第一方向并排；多个第一开关(Switch)，沿第一方向被安装在第一导电部上；多个第二开关，分别被安装在相对应的第三导电部上；多个信号端子，沿着第一方向被排列为与多个第三导电部之间存在第一导电部；电源端子，第一导电部电气连接；接地端子，与第二导电部电气连接；以及输出端子，分别与相对应的第三导电部电气连接。并且，电源端子以及接地端子被配置在设有多个信号端子的绝缘基板的一端侧，多个输出端子在绝缘基板的另一端侧沿第一方向被排列。另外，各个输出端子通过第二导电部并且跨过朝第一方向延伸的直线。根据像这样构成的本发明，能够谋求半导体装置的小型化，并且能够提供一种配线电阻很小并且效率很高的半导体装置。
【简单附图说明】
【图1】是显示实施方式涉及的半导体装置1的概略结构的平面图。
【图2】是显示实施方式涉及的半导体装置1的电路结构的电路图。
【图3】是显示被用于实施方式涉及的半导体装置1的制造中的引线框架(leadframe)70的平面图。
发明实施方式
以下，将参照附图对本发明的实施方式涉及的半导体装置及其制造方法进行说明。
(半导体装置)
参照图1以及图2对本发明的实施方式涉及的半导体装置1进行说明。如图2的电路图所示，实施方式涉及的半导体装置1是一种半导体装置(逆变器装置)，将从与电源端子21和接地端子22相连接的直流电源(未作图示)输入的直流电力转换为三相交流电力从而由输出端子23,24,25输出。
在半导体装置1中，在上表面设有导电部3～7的绝缘基板2上安装有高边开关(high-side switch)11,12,13以及低边开关(low-side switch)14,15,16，从而构成三相全桥(full-bridge)电路。
如图1所示，半导体装置1包括：陶瓷(ceramic)基板等的绝缘基板2；导电部3(第一导电部)；导电部4(第二导电部)；导电部5(第三导电部)；导电部6(第四导电部)；导电部7；高边开关11,12,13(多个第一开关)；低边开关14,15,16(多个第二开关)；控制端子31～36；监控端子41～45；电源端子21；接地端子22；多个输出端子23,24,25；热敏电阻(thermistor)17；铝金属线(Wire)等的导电金属线51～53；以及封装部60。以下，对半导体装置1的各构成要素进行详细说明。
导电部3～7为被设在绝缘基板2的上表面的导电图(Pattern)。该导电部3～7由铜，铝等金属构成。另外，为了提升散热性，即便绝缘基板2的下表面被金属层(未作图示)覆盖亦可。
如图1所示，导电部3被设置在绝缘基板2上朝第一方向延伸。在该导电部3上安装有高边开关11,12,13。
如图1所示，导电部4被设置为在绝缘基板2上从导电部3开始远离第二方向，并且朝第一方向延伸。即，导电部4被设为与导电部3基本平行。这里，第二方向是与第一方向不同的方向，例如，与第一方向相垂直的方向。
导电部4经由导电部6与接地端子22电气连接。导电部6与导电部4相连接，且朝第二方向延伸。另外，导电部6不是必要的结构，导电部4与接地端子22直接连接亦可。例如，使用被形成为与导电部6的长度相当的端子作为接地端子22，使用不干扰接地端子22的形状(I字状)的端子作为输出端子25。
如图1所示，多个导电部5被设置在绝缘基板2上，且在导电部3和导电部4之间沿第一方向并排。在各导电部5上逐个安装有低边开关14,15,16。
如图1所示，导电部7被设置在绝缘基板2的角落部呈岛状。该导电部7在半导体1的制造中形成封装部60时，压模(mould)为对接部分。
高边开关11,12,13具有：漏极(Drain)电极(第一主电极)；源极(Source)电极(第二主电极)以及栅极(Gate)电极(控制电极)。漏极电极，源极电极以及栅极电极被分别设置在高边开关11,12,13的下表面，上表面以及侧面。另外，高边开关11～13以及低边开关14～16例如是功率(Power)MOSFET，但IGBT等的其他半导体开关(Switching)元件亦可。
高边开关11,12,13沿着第一方向被安装在导电部3上。高边开关11,12,13的漏极电极经由焊锡(未作图示)与导电部3电气连接。另外，高边开关11,12,13的源极电极经由铝金属线等的导电金属线以及导电部5从而分别与相对应的低边开关14,15,16的漏极电极电气连接。高边开关11,12,13的栅极电极经由金线等的金属细线54从而分别与控制端子31,33,35电气连接。
低边开关14,15,16具有：漏极电极(第三主电极)；源极电极(第四主电极)以及栅极(Gate)电极(控制电极)。漏极电极，源极电极以及栅极电极被分别设置在低边开关14,15,16的下表面，上表面以及侧面。
低边开关14,15,16分别被安装在相对应的导电部5上。低边开关14,15,16的漏极电极经由导电部5以及导电金属线从而分别与相对应的高边开关11,12,13的源极电极电气连接。低边开关14,15,16的源极电极经由导电金属线51，52，53从而与导电部4电气连接。低边开关14,15,16的栅极电极经由金属细线从而分别与控制端子32,34,36电气连接。
半导体装置1具有控制端子31～36以及监控端子41～45作为信号端子。控制端子31,33,35是用于对高边开关11,12,13进行开(on)/关(off)控制的端子，控制端子32,34,36是用于对低边开关14,15,16进行开关控制的端子。
监控端子41,42,43是用于对各相的输出电压进行监控的端子。监控端子41与高边开关11的源极电极以及低边开关14的漏极电极电气连接。同样地，监控端子42与高边开关12的源极电极以及低边开关15的漏极电极电气连接，监控端子43与高边开关13的源极电极以及低边开关16的漏极电极电气连接。
监控端子44,45是用于对热敏电阻17进行监控的端子。热敏电阻17被设为用于测定半导体装置1的内部温度。例如，使用温度越高电阻越小的NTC型(type)热敏电阻作为该热敏电阻。
如图1所示，控制端子31～36以及监控端子41～45被将配置为沿绝缘基板2的一端排列。换言之，控制端子31～36以及监控端子41～45沿第一方向被排列为与多个导电部5之间存在导电部3。
另外，多个信号端子的前端部沿第一方向被配置为交错状亦可。如图1所示，在本实施方式中，将控制端子31～36以及监控端子41～45的前端部朝第二方向交替错开。通过这样，便能够使安装有半导体装置1的控制基板(未作图示)的贯穿孔(through hole)的间距(pitch)缓和。
电源端子21是用于连接直流电源的端子，接地端子22是接地用的端子。如图1所示，电源端子21以及接地端子22在设有多个信号端子的绝缘基板2的一端侧配置有前端部。
电源端子21与导电部3连接。更具体而言，电源端子21在其底部21a中与导电部3相焊接。接地端子22与导电部4电气连接。更具体而言，接地端子22在其底部22a中与导电部6相焊接。如图1所示，电源端子21和接地端子22被将配置为隔着控制端子31～36以及监控端子41～45。
另外，如图1所示，电源端子21以及接地端子22的前端部相对于控制端子31～36以及监控端子41～45(多个信号端子)被配置为交错状亦可。
输出端子23,24,25(多个输出端子)是用于将通过三相全桥电路转换的三相交流输出的端子，并且分别与相对应的导电部5电气连接。更具体而言，输出端子23,24,25在其底部23a,24a,25a中与导电部5相焊接。
如图1所示，输出端子23,24,25被配置在控制端子31～36以及监控端子41～45的相反侧。即，输出端子23,24,25在作为绝缘基板2的一端侧的反对侧的另一端侧沿第一方向被排列。输出端子23,24,25的前端部被配置在绝缘基板2的另一端侧。另外，如图1所示，输出端子23,24,25被设为跨过直线L。该直线L是通过导电部4并且跨过朝第一方向延伸的直线。
另外，电源端子21，接地端子22以及输出端子23,24,25中的至少一个具有对绝缘基板2的四个角落中的导电部7回避的平面形状。通过这样，在形成封装部60时，能够防止端子与压模相互干扰的情况。在本实施方式中，如图1所示，电源端子21，接地端子22以及输出端子23,25是回避导电部7的L字型平面形状。但是，平面形状不仅限于L字型，只要能回避导电部7其他形状(例如弧状)亦可。
如前所述，低边开关14的源极电极与导电部4通过导电金属线51被电气连接。如图1所示，该导电金属线51一端与低边开关14的源极电极相连接，另一端与在导电部4中被夹在相邻的输出端子23以及输出端子24间的区域A相连接。同样地，将低边开关15的源极电极与导电部4电气连接的导电金属线52的一端与低边开关15的源极电极相连接，另一端与区域A相连接。如图1所示，将低边开关16的源极电极与导电部4电气连接的导电金属线53的一端与低边开关16的源极电极相连接，另一端与在导电部4中被夹在相邻的输出端子24以及输出端子25间的区域B相连接。
封装部60将绝缘基板2的上表面侧，导电部3～7，高边开关11,12,13，低边开关14,15.16，热敏电阻17，导电金属线51,52,53以及各种端子的一部分封装。
如上所述，实施方式涉及的半导体装置1包括：导电部3，朝第一方向延伸；导电部4，远离与第一方向不同的第二方向，并且朝第一方向延伸；多个导电部5，在导电部3和导电部4之间沿第一方向并排；高边开关11,12,13，沿第一方向被安装在导电部3上；低边开关14,15,16，分别被安装在相对应的导电部5上；多个信号端子，沿着第一方向被排列为与多个导电部5之间存在导电部3；电源端子21，与导电部3电气连接；接地端子22，与导电部4电气连接；输出端子23,24,25，分别与相对应的导电部5电连接。并且，电源端子21以及接地端子22被配置在设有多个信号端子的绝缘基板的一端侧，输出端子23,24,25在绝缘基板2的另一端侧沿第一方向被排列。另外，输出端子23,24,25被设为通过导电部4并且跨过朝第一方向延伸的直线L。通过在这样的结构，能够在降低阻抗(impedance)或者电感的同时，还能够减小装置尺寸(size)。
因此根据本实施方式，能够谋求半导体装置的小型化，并且能够提供一种配线电阻很小并且效率很高的半导体装置。
(半导体装置的制造方法)
接着，对上述半导体装置1的制造方法进行说明。
首先，准备具有被设在绝缘基板2上的导电部3,4,5的配线部(未作图示)以及引线框架70。如图3所示，该引线框架70具有：多个信号端子(控制端子31～36，监控端子41～45)；包含电源端子21以及接地端子22的第一端子群；包含多个输出端子23,24,25的第二端子群。被包含在第一端子群中的端子底部与被包含在第二端子群中的端子底部被对向设置。
接着，在导电部3上经由膏状(cream)焊料将高边开关11,12,13沿第一方向装载，在各导电部5上经由膏状焊料将低边开关14,15,16装载。另外，热敏电阻17也装载在配线板的指定区域。
接着，将配线板与引线框架70对准位置使得电源端子21的底部21a，接地端子22的底部22a，以及输出端子23,24,25的底部23a,24a,25a分别在导电部3上，导电部6上，以及导电部5上经由膏状焊料从而相接。
另外，不仅限于上述步骤，在将配线板与引线框架70对准位置之后将高边开关11,12,13和低边开关14,15,16装载在配线板上亦可。
接着，通过回流焊(reflow)，将电源端子21，接地端子22以及输出端子23,24,25分别与导电部3，导电部4以及导电部5接合。之后，将焊剂(flux)残渣洗净并去除。
接着，将导电部4和低边开关14,15,16的源极电极通过导电金属线51,52,53连接(键合工序)。该键合工序具有：第一连接工序，将导电金属线51,52,53的一端与低边开关14,15,16的源极电极相连接；第二连接工序，在第一连接工序之后，将导电金属线51,52,53的另一端与在导电部4中被夹在相邻的输出端子间的区域A，B相连接。
接着，通过递模(transfer mold)法，将绝缘基板2的上表面侧，高边开关11,12,13，低边开关14,15.16，导电金属线51,52,53以及各种端子的一部分封装，从而如图1所示形成封装部60。之后，将引线框架70中不需要的部分(连接杆(tie bar)等)切断，通过进行各种端子的成型，从而得到半导体装置1。另外，在成型(forming)工序中，多个信号端子的前端部沿第一方向被配置为交错状地对各种端子进行成型亦可。
在上述制造方法中，在进行键合(bonding)工序时，通过将导电金属线51,52,53的另一端与输出端子间的区域A，B连接，键合装置与输出端子23,24,25不干扰，键合装置便能够将导电金属线容易地在导电部4上切断。因此，根据本实施方式，能够提升半导体装置的制造性。
基于上述记载，本领域技术人员可能能够联想到本发明的追加效果或者各种变形，但本发明的形态不仅被限定与上述几个实施方式。适当地将不同的实施方式涉及的构成要素进行组合亦可。只要在不脱离权利要求范围内所规定的内容以及由其同等物所导出的本发明的概念思想和主旨的范围内能够进行各种追加，变更以及部分删除。
符号说明
1 半导体装置
2 绝缘基板
3,4,5,6,7 导电部
11,12,13 高边开关
14,15,16 低边开关
17 热敏电阻
21 电源端子
22 接地端子
23,24,25 输出端子
21a，22a，23a，24a，25a 底部
31～36 控制端子
41～45 监控端子
51～53 导电金属线
54 金属细线
60 封装部
70 引线框架
A，B 区域
L 直线

Claims (8)

1.一种将直流电力转换为交流电力的半导体装置，其特征在于，包括：
绝缘基板；
第一导电部，被设置在所述绝缘基板上朝第一方向延伸；
第二导电部，被设置在所述绝缘基板上，从所述第一导电部开始远离与所述第一方向不同的第二方向，并且朝所述第一方向延伸；
多个第三导电部，被设置在所述绝缘基板上，在所述第一导电部和所述第二导电部之间沿所述第一方向并排；
多个第一开关，具有第一主电极，第二主电极以及控制电极，沿所述第一方向被安装在所述第一导电部上，并且所述第一主电极与所述第一导电部电气连接；
多个第二开关，具有第三主电极、第四主电极以及控制电极，分别被安装在相对应的所述第三导电部上，所述第三主电极与所述第一开关的所述第二主电极电气连接，所述第四主电极与所述第二导电部电气连接；
多个信号端子，沿着所述第一方向被排列为与所述多个第三导电部之间存在所述第一导电部；
电源端子，与所述第一导电部电气连接，被配置在设有所述多个信号端子的所述绝缘基板的一端侧；
接地端子，与所述第二导电部电气连接，被配置在所述绝缘基板的所述一端侧；以及
多个输出端子，分别与相对应的所述第三导电部电气连接，在所述绝缘基板的作为所述一端侧的反对侧的另一端侧沿所述第一方向被排列，通过所述第二导电部并且跨过沿所述第一方向延伸的直线。
2.根据权利要求1所述的半导体装置，其特征在于：
其中，所述第二开关的所述第四主电极与所述第二导电部通过导电金属线从而电气连接，所述导电金属线的一端与所述第四主电极相连接，且在所述第二导电部中，另一端与被夹在相邻的输出端子间的区域相连接。
3.根据权利要求1所述的半导体装置，其特征在于：
其中，所述多个信号端子的前端部沿所述第一方向被配置为交错状。
4.根据权利要求3所述的半导体装置，其特征在于：
其中，所述电源端子以及所述接地端子的前端部相对于所述多个信号端子被配置为交错状。
5.根据权利要求1所述的半导体装置，其特征在于：
其中，所述电源端子，所述接地端子以及所述输出端子中的至少一个具有对所述绝缘基板的角落部的导电部回避的平面形状。
6.根据权利要求5所述的半导体装置，其特征在于：
其中，所述平面形状为L字型。
7.一种将直流电力转换为交流电力的半导体装置的制造方法，其特征在于，包括：
配线板准备工序，该配线板具有：第一导电部，朝第一方向延伸；第二导电部，远离与第一方向不同的第二方向，并且朝第一方向延伸；多个第三导电部，在第一导电部和第二导电部之间沿第一方向并排；
引线框架准备工序，该引线框架具有：多个信号端子；包含电源端子以及接地端子的第一端子群；包含多个输出端子的第二端子群；
装载工序，在所述第一导电部上经由膏状焊料将多个第一开关沿所述第一方向装载，在所述各个第三导电部上经由膏状焊料将第二开关装载；
位置对准工序，将所述配线板与所述引线框架对准位置使得所述电源端子的底部，所述接地端子的底部，以及所述输出端子的底部分别在所述第一导电部上，在与第二导电部相连接且朝所述第二方向延伸的第四导电部上，以及在所述第三导电部上经由膏状焊料从而相接；接合工序，通过回流焊处理，使所述电源端子，所述接地端子以及所述输出端子分别与所述第一导电部，所述第二导电部以及所述第三导电部相接合；以及
键合工序，将所述第二导电部和所述第二开关的主电极通过导电金属线相连接。
8.根据权利要求7所述的半导体装置的制造方法，其特征在于：
其中，所述键合工序具有：第一连接工序，将所述导电金属线的一端与所述第二开关的所述主电极相连接；第二连接工序，在所述第一连接工序之后，将所述导电金属线的另一端与在所述第二开关中被夹在相邻的所述输出端子间的区域相连接。
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