JP2020501353A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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- JP2020501353A JP2020501353A JP2019528107A JP2019528107A JP2020501353A JP 2020501353 A JP2020501353 A JP 2020501353A JP 2019528107 A JP2019528107 A JP 2019528107A JP 2019528107 A JP2019528107 A JP 2019528107A JP 2020501353 A JP2020501353 A JP 2020501353A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 154
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- 238000001465 metallisation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明は、パワー半導体モジュールに関する。本発明は、改善された高い性能を示しつつ、非常に限定された空間のみを要するパワー半導体モジュールに言及する。
スイッチングパワー半導体デバイスといったパワー半導体デバイスを備えるパワー半導体モジュールが、当技術分野において一般的に知られている。たとえば、パワー半導体デバイスがロー側スイッチ領域およびハイ側スイッチ領域において配置される、いわゆるハーフブリッジ構成において配置されるパワー半導体モジュールを提供することが知られている。
本発明の目的は、先行技術の少なくとも1つの欠点を克服するパワー半導体モジュールを提供することである。本発明の目的は、高い電流定格を示し、このため良好な性能とともにスイッチングイベント中に均一に電流を共有し、それによって、限られたスペースしか要さないパワー半導体モジュールを提供することである。
本発明のこれらおよび他の局面は、以下に記載される実施形態を参照して明らかになり、説明されるであろう。
図面の以下の説明において、同じ参照番号は同じ構成要素を指す。一般に、個々の実施形態に関する相違点のみが記載される。図中にいくつかの同一の項目または部品が現れる場合、外観を単純化するためにその部品のすべてが参照番号を有するとは限らない。
10 パワー半導体モジュール
11 基板
12 ベースプレート
13 基板
14 DC+電源端子
14’ 位置
15 基板
16 DC−電源端子
16’ 位置
17 基板
18 AC電源端子
18’ 位置
20’ 位置
22’ 位置
24 第1の数量
26 パワー半導体デバイス
28 パワー半導体デバイス
30 第2の数量
32 パワー半導体デバイス
34 パワー半導体デバイス
36 接触領域
38 第1のデバイス領域
40 第2のデバイス領域
42 線
44 線
46 線
48 線
50 中心線
Claims (11)
- ベースプレート(12)を備えるパワー半導体モジュールであって、前記ベースプレート(12)上に少なくとも1つの基板(11,13,15,17)が配置され、電子回路は前記少なくとも1つの基板(11,13,15,17)上に提供され、DC+電源端子(14)とDC−電源端子(16)とAC電源端子(18)とを備える電気コネクタおよびさらに制御コネクタが前記少なくとも1つの基板(11,13,15,17)上に配置され、前記パワー半導体モジュール(10)は第1の数量(24)のスイッチングパワー半導体デバイス(26,28)と第2の数量(30)のスイッチングパワー半導体デバイス(32,34)とを備えるハーフブリッジモジュールとして設計され、前記ベースプレート(12)は接触領域(36)と第1のデバイス領域(38)と第2のデバイス領域(40)とを備え、前記第1のデバイス領域(38)が前記接触領域(36)の第1の側に配置され、前記第2のデバイス領域(40)が前記接触領域(36)の第2の側に配置されるように、前記接触領域(36)は前記ベースプレート(12)の中央部において配置され、前記第2の側は前記第1の側とは反対に配置され、前記DC+電源端子(14)と前記DC−電源端子(16)と前記AC電源端子(18)および前記制御コネクタは前記接触領域(36)において配置され、前記第1の数量(24)のスイッチングパワー半導体デバイス(26,28)は前記第1のデバイス領域(38)において配置され、前記第2の数量(30)のスイッチングパワー半導体デバイス(32,34)は前記第2のデバイス領域(40)において配置され、前記第1のデバイス領域(38)内のすべての前記パワー半導体デバイス(28,30)は前記ベースプレート(12)の幅に平行に整列された2つの平行線(42,44)において配置され、前記第2のデバイス領域(40)内のすべての前記パワー半導体デバイス(32,34)は前記ベースプレート(12)の前記幅に平行に整列された2つの平行線(46,48)において配置されることを特徴とする、パワー半導体モジュール。
- 前記第1の数量(24)のスイッチングパワー半導体デバイス(26,28)は、IGBTデバイスおよびダイオードを備え、前記第2の数量(30)のスイッチングパワー半導体デバイス(32,34)は、IGBTデバイスおよびダイオードを備えることを特徴とする、請求項1に記載のパワー半導体モジュール。
- 前記IGBTデバイスおよび前記ダイオードは、すべてのIGBTデバイスが前記ベースプレート(12)の幅に平行に整列された各デバイス領域(38,40)の第1の線(44,46)において配置され、すべてのダイオードが前記ベースプレート(12)の幅に平行に整列された各デバイス領域(38,40)の第2の線(42,48)において提供されるように配置されることを特徴とする、請求項2に記載のパワー半導体モジュール。
- 前記DC+電源端子(14)と前記DC−電源端子(16)とは、前記パワー半導体モジュール(10)の前記第1の側に導かれ、前記AC電源端子(18)は、前記パワー半導体モジュール(10)の前記第2の側に導かれることを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- 前記制御コネクタは、前記基板(11,13,15,17)にボンドワイヤによって接続されることを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- パワー半導体デバイス(26,28,32,34)のいずれかと前記DC+電源端子(14)、前記DC−電源端子(16)および前記AC電源端子(18)の固定位置(14’,16’,18’)のいずれかとの間の距離は、6mm以上であることを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- 前記接続領域(36)は、15mm以上40mm以下の長さを有することを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- 前記第1のデバイス領域(38)および前記第2のデバイス領域(40)のうちの少なくとも1つは、20mm以上40mm以下の長さを有することを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- 前記接続領域(36)は、長方形にされることを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- 4つの基板(11,13,15,17)は、前記ベースプレート(12)上に配置され、各基板(11,13,15,17)は前記電気回路の一部を担持することを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
- 少なくとも2つの基板(11,13,15,17)は、同様に配置されることを特徴とする、上述の請求項のいずれか1項に記載のパワー半導体モジュール。
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CN111682021B (zh) * | 2020-06-17 | 2024-06-04 | 上海临港电力电子研究有限公司 | 功率半导体模块衬底及其所应用的功率半导体设备 |
EP4095900B1 (en) * | 2021-05-28 | 2024-01-31 | Hitachi Energy Ltd | Clamping element and method for producing a power semiconductor device |
CN113834527A (zh) * | 2021-09-18 | 2021-12-24 | 重庆大学 | 一种压接型功率半导体结构及其内部压力在线测量方法 |
DE102022205514A1 (de) | 2022-05-31 | 2023-11-30 | Vitesco Technologies GmbH | Halbbrückenmodul mit parallel geführten Versorgungs-Zuleitungen verbunden mit isolierten Anschlussflächen zwischen zwei Streifenabschnitten sowie mit einem der Streifenabschnitte einer Leiterbahnschicht |
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