FR3088138B1 - Module electronique de puissance - Google Patents

Module electronique de puissance Download PDF

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Publication number
FR3088138B1
FR3088138B1 FR1871394A FR1871394A FR3088138B1 FR 3088138 B1 FR3088138 B1 FR 3088138B1 FR 1871394 A FR1871394 A FR 1871394A FR 1871394 A FR1871394 A FR 1871394A FR 3088138 B1 FR3088138 B1 FR 3088138B1
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France
Prior art keywords
chip
face
conductive layer
electronic module
power
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Active
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FR1871394A
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English (en)
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FR3088138A1 (fr
Inventor
Menouar Ameziani
Hadi Alawieh
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Institut Vedecom
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Institut Vedecom
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Publication date
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Priority to FR1871394A priority Critical patent/FR3088138B1/fr
Priority to PCT/FR2019/052605 priority patent/WO2020094959A1/fr
Publication of FR3088138A1 publication Critical patent/FR3088138A1/fr
Application granted granted Critical
Publication of FR3088138B1 publication Critical patent/FR3088138B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout

Abstract

MODULE ELECTRONIQUE DE PUISSANCE Le module comprend au moins un substrat (SUBL) et des première et deuxième sections de commutation formant une branche de pont de commutation, les sections de commutation comprenant, en nombre égal, au moins une première puce électronique (T2HS) et une deuxième puce électronique (T1LS) ayant chacune des première et deuxième faces d’électrode supportant respectivement des première et deuxième électrodes de puissance (S, D), et le substrat comprenant une couche conductrice (CHL) sur laquelle sont implantées les puces. Conformément à l’invention, les première et deuxième puces sont implantées tête bêche, la première puce étant fixée sur la couche conductrice par sa première face et la deuxième puce étant fixée sur la couche conductrice par sa deuxième face, et la deuxième face de la première puce et la première face de la deuxième puce étant reliées respectivement à des premier et deuxième bus barre d’alimentation continue (DC-, DC+). Fig.11
FR1871394A 2018-11-07 2018-11-07 Module electronique de puissance Active FR3088138B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1871394A FR3088138B1 (fr) 2018-11-07 2018-11-07 Module electronique de puissance
PCT/FR2019/052605 WO2020094959A1 (fr) 2018-11-07 2019-11-04 Module electronique de puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1871394A FR3088138B1 (fr) 2018-11-07 2018-11-07 Module electronique de puissance

Publications (2)

Publication Number Publication Date
FR3088138A1 FR3088138A1 (fr) 2020-05-08
FR3088138B1 true FR3088138B1 (fr) 2022-01-21

Family

ID=66530105

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1871394A Active FR3088138B1 (fr) 2018-11-07 2018-11-07 Module electronique de puissance

Country Status (2)

Country Link
FR (1) FR3088138B1 (fr)
WO (1) WO2020094959A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7592688B2 (en) * 2006-01-13 2009-09-22 International Rectifier Corporation Semiconductor package
JP5763026B2 (ja) 2012-09-24 2015-08-12 株式会社東芝 半導体装置
FR3050571A1 (fr) * 2016-04-20 2017-10-27 Centre Nat Rech Scient Convertisseur electronique de puissance utilisant deux puces multi-poles de puissance a substrats complementaires n et p.
CN109997223B (zh) * 2016-11-25 2023-06-30 日立能源瑞士股份公司 功率半导体模块

Also Published As

Publication number Publication date
WO2020094959A1 (fr) 2020-05-14
FR3088138A1 (fr) 2020-05-08

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