JP2013045974A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2013045974A JP2013045974A JP2011184019A JP2011184019A JP2013045974A JP 2013045974 A JP2013045974 A JP 2013045974A JP 2011184019 A JP2011184019 A JP 2011184019A JP 2011184019 A JP2011184019 A JP 2011184019A JP 2013045974 A JP2013045974 A JP 2013045974A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000001816 cooling Methods 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【解決手段】互いに直列に接続された一対の半導体素子16,18と、ヒートシンク7と、前記第1の端子の一方の第1の端子12と、前記一対の半導体素子の一方の半導体素子16の一方の電極とのそれぞれに電気的に接続された第1の電極10と、前記第2の端子13と、前記一対の半導体素子の他方の半導体素子18の一方の電極とのそれぞれに電気的に接続された出力電極11と、前記第1の端子の他方の第1の端子14に電気的に接続された第2の電極9と、を備える半導体モジュールであって、前記第2の電極9が、第1の絶縁部材8aを介して前記ヒートシンク7に接続され、前記出力電極11が、第2の絶縁部材8bを介して前記第2の電極9に接続されている。
【選択図】図3A
Description
図4は、本発明の第1実施形態に係る半導体モジュールを示す、浮遊容量を含む電気回路図である。本例の半導体モジュール1は、それぞれスイッチング素子と整流ダイオードからなるP側半導体素子16およびN側半導体素子18と、ヒートシンク7とを備え、第1の電力系に電気的に接続されるP端子12およびN端子14と、第2の電力系に電気的に接続されるAC端子13とが設けられている。なお、4は、AC端子13が接続されたAC電極パターン11と接地GNDとの間の浮遊容量、5はP端子12が接続されたP電極パターン10と接地GNDとの間の浮遊容量、6はN端子14が接続されたN電極パターン9と接地GNDとの間の浮遊容量をそれぞれ示す。
図6Aは本発明の第2実施形態に係る半導体モジュールを示す側面図、図6Bは平面図である。本例の半導体モジュール1は、接地GNDに接続されるヒートシンク7を有し、このヒートシンク7の上に絶縁層8cを介してN電極パターン9aおよびP電極パターン10aが接続され、その上に他の絶縁層8dを介してAC電極パターン11aが接続されている。そして、P電極パターン10aには電流入出力用のP端子12が実装され、AC電極パターン11aには電流入出力用のAC端子13が実装され、N電極パターン9aには電流入出力用のN端子14が実装されている。上述した図3A,図3Bに示す第1実施形態の半導体モジュール1に比べ、P電極パターン10,10aの積層位置が相違する。
2:P側半導体素子
3:N側半導体素子
4,5,6,4a,5a,6a:浮遊容量
7:ヒートシンク
8a,8b,8c,8d:絶縁層
9,9a:N電極パターン
10,10a:P電極パターン
11,11a:AC電極パターン
12:P端子
13:AC端子
14:N端子
15:金属パターン
16:P側半導体素子
17a,17b:ボンディングワイヤ
18:N側半導体素子
19:スルーホール
BT:二次電池
C:平滑用コンデンサ
M:モータ
INV:電力変換部
Claims (4)
- 第1の電力系に電気的に接続される第1の端子と第2の電力系に電気的に接続される第2の端子とを有し、互いに直列に接続された一対の半導体素子と、
ヒートシンクと、
前記第1の端子の一方の第1の端子と、前記一対の半導体素子の一方の半導体素子の一方の電極とのそれぞれに電気的に接続された第1の電極と、
前記第2の端子と、前記一対の半導体素子の他方の半導体素子の一方の電極とのそれぞれに電気的に接続された出力電極と、
前記第1の端子の他方の第1の端子に電気的に接続された第2の電極と、
を備える半導体モジュールであって、
前記一方の半導体素子の他方の電極が、前記出力電極に電気的に接続され、
前記他方の半導体素子の他方の電極が、前記第2の電極に電気的に接続され、
前記第2の電極が、第1の絶縁部材を介して前記ヒートシンクに接続され、
前記出力電極が、第2の絶縁部材を介して前記第2の電極に接続されている半導体モジュール。 - 前記第1の電極は、前記第2の絶縁部材を介して前記第2の電極に接続されている請求項1に記載の半導体モジュール。
- 前記第1の電極は、前記第1の絶縁部材を介して前記ヒートシンクに接続され、
前記第1の電極の面積と前記第2の電極の面積が略同一である請求項1に記載の半導体モジュール。 - 前記第2の電極は、
前記出力電極と同一面に形成された電極と、
前記第1の絶縁部材上に形成された電極と、
これら2つの電極を電気的に接続するスルーホールと、を含む請求項1〜3のいずれか一項に記載の半導体モジュール。
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