JP2012530033A5 - - Google Patents

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Publication number
JP2012530033A5
JP2012530033A5 JP2012515463A JP2012515463A JP2012530033A5 JP 2012530033 A5 JP2012530033 A5 JP 2012530033A5 JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012530033 A5 JP2012530033 A5 JP 2012530033A5
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JP
Japan
Prior art keywords
zinc oxide
porous layer
precursor compound
layer
particles
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JP2012515463A
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English (en)
Japanese (ja)
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JP2012530033A (ja
JP5634511B2 (ja
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Priority claimed from PCT/EP2010/058391 external-priority patent/WO2010146053A1/de
Publication of JP2012530033A publication Critical patent/JP2012530033A/ja
Publication of JP2012530033A5 publication Critical patent/JP2012530033A5/ja
Application granted granted Critical
Publication of JP5634511B2 publication Critical patent/JP5634511B2/ja
Expired - Fee Related legal-status Critical Current
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JP2012515463A 2009-06-16 2010-06-15 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 Expired - Fee Related JP5634511B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09162783.6 2009-06-16
EP09162783 2009-06-16
PCT/EP2010/058391 WO2010146053A1 (de) 2009-06-16 2010-06-15 Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten

Publications (3)

Publication Number Publication Date
JP2012530033A JP2012530033A (ja) 2012-11-29
JP2012530033A5 true JP2012530033A5 (enExample) 2013-08-01
JP5634511B2 JP5634511B2 (ja) 2014-12-03

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ID=42751990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012515463A Expired - Fee Related JP5634511B2 (ja) 2009-06-16 2010-06-15 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物

Country Status (6)

Country Link
US (1) US9129801B2 (enExample)
EP (1) EP2443650A1 (enExample)
JP (1) JP5634511B2 (enExample)
KR (1) KR20120039638A (enExample)
CN (1) CN102460641A (enExample)
WO (1) WO2010146053A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102612406A (zh) * 2009-11-20 2012-07-25 巴斯夫欧洲公司 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法
CN102668086B (zh) 2009-12-18 2016-01-06 巴斯夫欧洲公司 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
TW201206896A (en) 2010-04-13 2012-02-16 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
KR20130057439A (ko) * 2010-04-28 2013-05-31 바스프 에스이 아연 착물 용액의 제조 방법
EP2589066B1 (en) 2010-06-29 2015-10-21 Merck Patent GmbH Preparation of semiconductor films
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
DE102012206234A1 (de) * 2012-04-17 2013-10-17 Evonik Industries Ag Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen
JP5936568B2 (ja) 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
US20160116652A1 (en) * 2013-06-20 2016-04-28 Merck Patent Gmbh Method for controlling the optical properties of uv filter layers
US9214288B2 (en) * 2013-09-05 2015-12-15 National Cheng Kung University Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof
GB201319263D0 (en) * 2013-10-31 2013-12-18 Montanuniversit T Leoben Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same
WO2015113737A1 (en) * 2014-01-31 2015-08-06 Merck Patent Gmbh Method for producing a uv photodetector
KR20160115972A (ko) * 2014-01-31 2016-10-06 메르크 파텐트 게엠베하 반도체 필름의 제조
AT518664B1 (de) 2016-04-22 2017-12-15 Trench Austria Gmbh HGÜ-Luftdrosselspule und Verfahren zur Herstellung
CN112090170B (zh) * 2020-09-30 2022-05-06 安徽泰龙锌业有限责任公司 一种紫外光冷燃烧除臭氧化锌滤芯材料的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040046168A1 (en) 2002-08-13 2004-03-11 Agfa-Gevaert Porous metal oxide semiconductor spectrally sensitized with metal oxide
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
CN101563294A (zh) * 2006-10-11 2009-10-21 巴斯夫欧洲公司 生产表面改性的纳米颗粒状金属氧化物、金属氢氧化物和/或金属羟基氧化物的方法
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
CN100548434C (zh) * 2007-07-12 2009-10-14 奇迪电器集团有限公司 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯
WO2009013291A2 (en) 2007-07-25 2009-01-29 Basf Se Field effect elements
WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
JP2009040640A (ja) * 2007-08-09 2009-02-26 Andes Denki Kk 酸化亜鉛薄膜の製造方法

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