JP2012530033A5 - - Google Patents

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Publication number
JP2012530033A5
JP2012530033A5 JP2012515463A JP2012515463A JP2012530033A5 JP 2012530033 A5 JP2012530033 A5 JP 2012530033A5 JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012530033 A5 JP2012530033 A5 JP 2012530033A5
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JP
Japan
Prior art keywords
zinc oxide
porous layer
precursor compound
layer
particles
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JP2012515463A
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English (en)
Japanese (ja)
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JP2012530033A (ja
JP5634511B2 (ja
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Priority claimed from PCT/EP2010/058391 external-priority patent/WO2010146053A1/de
Publication of JP2012530033A publication Critical patent/JP2012530033A/ja
Publication of JP2012530033A5 publication Critical patent/JP2012530033A5/ja
Application granted granted Critical
Publication of JP5634511B2 publication Critical patent/JP5634511B2/ja
Expired - Fee Related legal-status Critical Current
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JP2012515463A 2009-06-16 2010-06-15 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 Expired - Fee Related JP5634511B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09162783.6 2009-06-16
EP09162783 2009-06-16
PCT/EP2010/058391 WO2010146053A1 (de) 2009-06-16 2010-06-15 Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten

Publications (3)

Publication Number Publication Date
JP2012530033A JP2012530033A (ja) 2012-11-29
JP2012530033A5 true JP2012530033A5 (enExample) 2013-08-01
JP5634511B2 JP5634511B2 (ja) 2014-12-03

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ID=42751990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012515463A Expired - Fee Related JP5634511B2 (ja) 2009-06-16 2010-06-15 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物

Country Status (6)

Country Link
US (1) US9129801B2 (enExample)
EP (1) EP2443650A1 (enExample)
JP (1) JP5634511B2 (enExample)
KR (1) KR20120039638A (enExample)
CN (1) CN102460641A (enExample)
WO (1) WO2010146053A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2501472A1 (de) * 2009-11-20 2012-09-26 Basf Se Mehrlagenkatalysator zur herstellung von carbonsäuren und/oder carbonsäureanhydriden mit vanadiumantimonat in wenigstens einer katalysatorlage und verfahren zur herstellung von phthalsäureanhydrid mit niedriger hotspottemperatur
WO2011073044A1 (de) 2009-12-18 2011-06-23 Basf Se Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
WO2011135514A2 (en) * 2010-04-28 2011-11-03 Basf Se Process for preparing a zinc complex in solution
US9117964B2 (en) 2010-06-29 2015-08-25 Merck Patent Gmbh Preparation of semiconductor films
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
DE102012206234A1 (de) * 2012-04-17 2013-10-17 Evonik Industries Ag Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen
JP5936568B2 (ja) 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
US20160116652A1 (en) * 2013-06-20 2016-04-28 Merck Patent Gmbh Method for controlling the optical properties of uv filter layers
US9214288B2 (en) * 2013-09-05 2015-12-15 National Cheng Kung University Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof
GB201319263D0 (en) * 2013-10-31 2013-12-18 Montanuniversit T Leoben Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same
US10431704B2 (en) 2014-01-31 2019-10-01 Merck Patent Gmbh Method for producing a UV photodetector
US20160359060A1 (en) * 2014-01-31 2016-12-08 Merck Patent Gmbh Preparation of semiconductor films
AT518664B1 (de) * 2016-04-22 2017-12-15 Trench Austria Gmbh HGÜ-Luftdrosselspule und Verfahren zur Herstellung
CN112090170B (zh) * 2020-09-30 2022-05-06 安徽泰龙锌业有限责任公司 一种紫外光冷燃烧除臭氧化锌滤芯材料的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040046168A1 (en) * 2002-08-13 2004-03-11 Agfa-Gevaert Porous metal oxide semiconductor spectrally sensitized with metal oxide
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
EP2079664A2 (de) * 2006-10-11 2009-07-22 Basf Se Verfahren zur herstellung oberflächenmodifizierter nanopartikulärer metalloxide, metallhydroxide und/oder metalloxidhydroxide
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
CN100548434C (zh) * 2007-07-12 2009-10-14 奇迪电器集团有限公司 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯
WO2009013291A2 (en) 2007-07-25 2009-01-29 Basf Se Field effect elements
WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
JP2009040640A (ja) * 2007-08-09 2009-02-26 Andes Denki Kk 酸化亜鉛薄膜の製造方法

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