JP2012530033A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012530033A5 JP2012530033A5 JP2012515463A JP2012515463A JP2012530033A5 JP 2012530033 A5 JP2012530033 A5 JP 2012530033A5 JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012530033 A5 JP2012530033 A5 JP 2012530033A5
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- porous layer
- precursor compound
- layer
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 18
- 238000000034 method Methods 0.000 claims 14
- 239000011787 zinc oxide Substances 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 150000001768 cations Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 claims 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- -1 Okishimeto Chemical class 0.000 claims 1
- 150000004703 alkoxides Chemical class 0.000 claims 1
- 150000001409 amidines Chemical class 0.000 claims 1
- 150000001411 amidrazones Chemical class 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 150000003868 ammonium compounds Chemical class 0.000 claims 1
- 150000001540 azides Chemical class 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 150000007942 carboxylates Chemical class 0.000 claims 1
- 238000005266 casting Methods 0.000 claims 1
- 238000003618 dip coating Methods 0.000 claims 1
- 239000012948 isocyanate Substances 0.000 claims 1
- 150000002513 isocyanates Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 150000002825 nitriles Chemical class 0.000 claims 1
- 150000002923 oximes Chemical class 0.000 claims 1
- 150000003003 phosphines Chemical class 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- DUIOPKIIICUYRZ-UHFFFAOYSA-N semicarbazide Chemical compound NNC(N)=O DUIOPKIIICUYRZ-UHFFFAOYSA-N 0.000 claims 1
- 239000012798 spherical particle Substances 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 150000003672 ureas Chemical class 0.000 claims 1
- 150000003673 urethanes Chemical class 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09162783.6 | 2009-06-16 | ||
| EP09162783 | 2009-06-16 | ||
| PCT/EP2010/058391 WO2010146053A1 (de) | 2009-06-16 | 2010-06-15 | Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012530033A JP2012530033A (ja) | 2012-11-29 |
| JP2012530033A5 true JP2012530033A5 (enExample) | 2013-08-01 |
| JP5634511B2 JP5634511B2 (ja) | 2014-12-03 |
Family
ID=42751990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012515463A Expired - Fee Related JP5634511B2 (ja) | 2009-06-16 | 2010-06-15 | 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9129801B2 (enExample) |
| EP (1) | EP2443650A1 (enExample) |
| JP (1) | JP5634511B2 (enExample) |
| KR (1) | KR20120039638A (enExample) |
| CN (1) | CN102460641A (enExample) |
| WO (1) | WO2010146053A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612406A (zh) * | 2009-11-20 | 2012-07-25 | 巴斯夫欧洲公司 | 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法 |
| CN102668086B (zh) | 2009-12-18 | 2016-01-06 | 巴斯夫欧洲公司 | 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管 |
| US20110230668A1 (en) * | 2010-03-19 | 2011-09-22 | Basf Se | Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide |
| US8901320B2 (en) | 2010-04-13 | 2014-12-02 | Basf Se | Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride |
| US8691168B2 (en) | 2010-04-28 | 2014-04-08 | Basf Se | Process for preparing a zinc complex in solution |
| KR20130034662A (ko) | 2010-06-29 | 2013-04-05 | 메르크 파텐트 게엠베하 | 반도체막의 제조 |
| US8859459B2 (en) | 2010-06-30 | 2014-10-14 | Basf Se | Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride |
| US9212157B2 (en) | 2010-07-30 | 2015-12-15 | Basf Se | Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride |
| DE102012206234A1 (de) * | 2012-04-17 | 2013-10-17 | Evonik Industries Ag | Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen |
| JP5936568B2 (ja) | 2013-03-08 | 2016-06-22 | 富士フイルム株式会社 | 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置 |
| WO2014202178A1 (de) * | 2013-06-20 | 2014-12-24 | Merck Patent Gmbh | Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten |
| US9214288B2 (en) * | 2013-09-05 | 2015-12-15 | National Cheng Kung University | Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof |
| GB201319263D0 (en) * | 2013-10-31 | 2013-12-18 | Montanuniversit T Leoben | Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same |
| JP2017512187A (ja) * | 2014-01-31 | 2017-05-18 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ | 半導体膜の製造 |
| CN105934535A (zh) * | 2014-01-31 | 2016-09-07 | 默克专利股份有限公司 | 制备uv光检测器的方法 |
| AT518664B1 (de) * | 2016-04-22 | 2017-12-15 | Trench Austria Gmbh | HGÜ-Luftdrosselspule und Verfahren zur Herstellung |
| CN112090170B (zh) * | 2020-09-30 | 2022-05-06 | 安徽泰龙锌业有限责任公司 | 一种紫外光冷燃烧除臭氧化锌滤芯材料的制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040046168A1 (en) * | 2002-08-13 | 2004-03-11 | Agfa-Gevaert | Porous metal oxide semiconductor spectrally sensitized with metal oxide |
| US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| JP2010505736A (ja) * | 2006-10-11 | 2010-02-25 | ビーエーエスエフ ソシエタス・ヨーロピア | 表面改質されたナノ粒子状の金属酸化物、金属水酸化物および／または金属オキシ水酸化物の製造方法 |
| US7511343B2 (en) * | 2006-10-12 | 2009-03-31 | Xerox Corporation | Thin film transistor |
| CN100548434C (zh) * | 2007-07-12 | 2009-10-14 | 奇迪电器集团有限公司 | 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯 |
| WO2009013291A2 (en) | 2007-07-25 | 2009-01-29 | Basf Se | Field effect elements |
| WO2009016107A1 (en) | 2007-07-30 | 2009-02-05 | Basf Se | Method for depositing a semiconducting layer from a liquid |
| JP2009040640A (ja) * | 2007-08-09 | 2009-02-26 | Andes Denki Kk | 酸化亜鉛薄膜の製造方法 |
-
2010
- 2010-06-15 EP EP10725447A patent/EP2443650A1/de not_active Withdrawn
- 2010-06-15 US US13/378,765 patent/US9129801B2/en not_active Expired - Fee Related
- 2010-06-15 KR KR1020127001172A patent/KR20120039638A/ko not_active Abandoned
- 2010-06-15 JP JP2012515463A patent/JP5634511B2/ja not_active Expired - Fee Related
- 2010-06-15 CN CN201080026778XA patent/CN102460641A/zh active Pending
- 2010-06-15 WO PCT/EP2010/058391 patent/WO2010146053A1/de not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012530033A5 (enExample) | ||
| JP5634511B2 (ja) | 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 | |
| WO2010125011A3 (de) | Verfahren zur herstellung von halbleitenden schichten | |
| US9863039B2 (en) | MoS2 thin film and method for manufacturing same | |
| JP2009536986A5 (enExample) | ||
| KR101494671B1 (ko) | 압전 물질의 나노 튜브 제조 방법 및 압전 물질의 나노 튜브 | |
| JP2018510968A5 (enExample) | ||
| CN103740327B (zh) | 一种分子铁电薄膜及其溶液浸泡生长方法 | |
| CN103140903A (zh) | R-t-b类烧结磁体的制造方法 | |
| CN102668086B (zh) | 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管 | |
| JP6853382B2 (ja) | ペロブスカイト構造を有する光吸収材料を生成するための方法、及びそれを実施するための可変組成の液体ポリハロゲン化物 | |
| JP2019518097A5 (enExample) | ||
| WO2016004191A1 (en) | Method for making a catalyst metal substrate for growth of carbon nanotubes | |
| CN103739009A (zh) | 利用溶胶凝胶法制备钛酸铜钙薄膜 | |
| US8691168B2 (en) | Process for preparing a zinc complex in solution | |
| US9378966B2 (en) | Selective etching of silicon wafer | |
| CN1346697A (zh) | 陶瓷催化剂体,陶瓷载体和它们的生产方法 | |
| WO2016175067A1 (ja) | 希土類磁石の製造方法及びスラリー塗布装置 | |
| JP2015053452A5 (enExample) | ||
| US9704719B2 (en) | Systems and methods to mitigate nitride precipitates | |
| KR101096079B1 (ko) | 불소 도핑을 통한 용액 공정용 산화물 반도체 기반 박막 트랜지스터의 전기적 물성 제어 방법 | |
| CN107533912B (zh) | 稀土类磁铁的制造方法和浆料涂布装置 | |
| US20080175985A1 (en) | Method of Preparing Stable Oxide Ceramic Precursor Sol-Gel Solutions Based on Lead, Titanium, Zirconium and Lanthanide(s) and Method of Preparing Said Ceramic | |
| EP4047682A1 (en) | Anode, method for manufacturing same by using electrolytic deposition, and device for manufacturing same | |
| KR20170052761A (ko) | 페로브스카이트 나노구조체의 제조방법 및 이에 따라 제조되는 페로브스카이트 나노구조체 |