KR20120039638A - 반도체 금속 산화물 입자 층에서 미립자간 접촉 부위를 개선하고 간극을 충전하기 위한 열 불안정성 전구체 화합물 - Google Patents

반도체 금속 산화물 입자 층에서 미립자간 접촉 부위를 개선하고 간극을 충전하기 위한 열 불안정성 전구체 화합물 Download PDF

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Publication number
KR20120039638A
KR20120039638A KR1020127001172A KR20127001172A KR20120039638A KR 20120039638 A KR20120039638 A KR 20120039638A KR 1020127001172 A KR1020127001172 A KR 1020127001172A KR 20127001172 A KR20127001172 A KR 20127001172A KR 20120039638 A KR20120039638 A KR 20120039638A
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South Korea
Prior art keywords
metal oxide
semiconductor metal
semiconductor
precursor compound
substrate
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KR1020127001172A
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English (en)
Korean (ko)
Inventor
프리더리커 플라이쉬하커
임메 돔케
안드레이 카르포프
마르쉘 카스틀러
베로니카 블록카
로타 베버
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바스프 에스이
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Publication of KR20120039638A publication Critical patent/KR20120039638A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020127001172A 2009-06-16 2010-06-15 반도체 금속 산화물 입자 층에서 미립자간 접촉 부위를 개선하고 간극을 충전하기 위한 열 불안정성 전구체 화합물 Abandoned KR20120039638A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09162783.6 2009-06-16
EP09162783 2009-06-16

Publications (1)

Publication Number Publication Date
KR20120039638A true KR20120039638A (ko) 2012-04-25

Family

ID=42751990

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127001172A Abandoned KR20120039638A (ko) 2009-06-16 2010-06-15 반도체 금속 산화물 입자 층에서 미립자간 접촉 부위를 개선하고 간극을 충전하기 위한 열 불안정성 전구체 화합물

Country Status (6)

Country Link
US (1) US9129801B2 (enExample)
EP (1) EP2443650A1 (enExample)
JP (1) JP5634511B2 (enExample)
KR (1) KR20120039638A (enExample)
CN (1) CN102460641A (enExample)
WO (1) WO2010146053A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102612406A (zh) * 2009-11-20 2012-07-25 巴斯夫欧洲公司 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法
CN102668086B (zh) 2009-12-18 2016-01-06 巴斯夫欧洲公司 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
US8691168B2 (en) 2010-04-28 2014-04-08 Basf Se Process for preparing a zinc complex in solution
KR20130034662A (ko) 2010-06-29 2013-04-05 메르크 파텐트 게엠베하 반도체막의 제조
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
DE102012206234A1 (de) * 2012-04-17 2013-10-17 Evonik Industries Ag Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen
JP5936568B2 (ja) 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
WO2014202178A1 (de) * 2013-06-20 2014-12-24 Merck Patent Gmbh Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten
US9214288B2 (en) * 2013-09-05 2015-12-15 National Cheng Kung University Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof
GB201319263D0 (en) * 2013-10-31 2013-12-18 Montanuniversit T Leoben Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same
JP2017512187A (ja) * 2014-01-31 2017-05-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 半導体膜の製造
CN105934535A (zh) * 2014-01-31 2016-09-07 默克专利股份有限公司 制备uv光检测器的方法
AT518664B1 (de) * 2016-04-22 2017-12-15 Trench Austria Gmbh HGÜ-Luftdrosselspule und Verfahren zur Herstellung
CN112090170B (zh) * 2020-09-30 2022-05-06 安徽泰龙锌业有限责任公司 一种紫外光冷燃烧除臭氧化锌滤芯材料的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040046168A1 (en) * 2002-08-13 2004-03-11 Agfa-Gevaert Porous metal oxide semiconductor spectrally sensitized with metal oxide
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
JP2010505736A (ja) * 2006-10-11 2010-02-25 ビーエーエスエフ ソシエタス・ヨーロピア 表面改質されたナノ粒子状の金属酸化物、金属水酸化物および／または金属オキシ水酸化物の製造方法
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
CN100548434C (zh) * 2007-07-12 2009-10-14 奇迪电器集团有限公司 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯
WO2009013291A2 (en) 2007-07-25 2009-01-29 Basf Se Field effect elements
WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
JP2009040640A (ja) * 2007-08-09 2009-02-26 Andes Denki Kk 酸化亜鉛薄膜の製造方法

Also Published As

Publication number Publication date
US20120086002A1 (en) 2012-04-12
US9129801B2 (en) 2015-09-08
JP5634511B2 (ja) 2014-12-03
EP2443650A1 (de) 2012-04-25
WO2010146053A1 (de) 2010-12-23
JP2012530033A (ja) 2012-11-29
CN102460641A (zh) 2012-05-16

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