CN102460641A - 用于改进颗粒间接触部位和填充半导体金属氧化物颗粒层中的间隙的热不稳定性前体化合物 - Google Patents

用于改进颗粒间接触部位和填充半导体金属氧化物颗粒层中的间隙的热不稳定性前体化合物 Download PDF

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CN102460641A
CN102460641A CN201080026778XA CN201080026778A CN102460641A CN 102460641 A CN102460641 A CN 102460641A CN 201080026778X A CN201080026778X A CN 201080026778XA CN 201080026778 A CN201080026778 A CN 201080026778A CN 102460641 A CN102460641 A CN 102460641A
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China
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metal oxide
semiconducting metal
semiconducting
substrate
porous layer
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Chinese (zh)
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F·弗莱施哈克尔
I·多姆克
A·卡尔波夫
M·卡斯特勒
V·弗洛卡
L·韦伯
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BASF SE
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BASF SE
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN201080026778XA 2009-06-16 2010-06-15 用于改进颗粒间接触部位和填充半导体金属氧化物颗粒层中的间隙的热不稳定性前体化合物 Pending CN102460641A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09162783.6 2009-06-16
EP09162783 2009-06-16
PCT/EP2010/058391 WO2010146053A1 (de) 2009-06-16 2010-06-15 Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten

Publications (1)

Publication Number Publication Date
CN102460641A true CN102460641A (zh) 2012-05-16

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Family Applications (1)

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CN201080026778XA Pending CN102460641A (zh) 2009-06-16 2010-06-15 用于改进颗粒间接触部位和填充半导体金属氧化物颗粒层中的间隙的热不稳定性前体化合物

Country Status (6)

Country Link
US (1) US9129801B2 (enExample)
EP (1) EP2443650A1 (enExample)
JP (1) JP5634511B2 (enExample)
KR (1) KR20120039638A (enExample)
CN (1) CN102460641A (enExample)
WO (1) WO2010146053A1 (enExample)

Cited By (3)

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CN105934535A (zh) * 2014-01-31 2016-09-07 默克专利股份有限公司 制备uv光检测器的方法
CN105940485A (zh) * 2014-01-31 2016-09-14 默克专利有限公司 半导体膜的制备
CN109074949A (zh) * 2016-04-22 2018-12-21 西门子股份公司 HGü空气扼流线圈及制造方法

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CN102612406A (zh) * 2009-11-20 2012-07-25 巴斯夫欧洲公司 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法
CN102668086B (zh) 2009-12-18 2016-01-06 巴斯夫欧洲公司 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
US8691168B2 (en) 2010-04-28 2014-04-08 Basf Se Process for preparing a zinc complex in solution
KR20130034662A (ko) 2010-06-29 2013-04-05 메르크 파텐트 게엠베하 반도체막의 제조
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
DE102012206234A1 (de) * 2012-04-17 2013-10-17 Evonik Industries Ag Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen
JP5936568B2 (ja) 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
WO2014202178A1 (de) * 2013-06-20 2014-12-24 Merck Patent Gmbh Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten
US9214288B2 (en) * 2013-09-05 2015-12-15 National Cheng Kung University Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof
GB201319263D0 (en) * 2013-10-31 2013-12-18 Montanuniversit T Leoben Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same
CN112090170B (zh) * 2020-09-30 2022-05-06 安徽泰龙锌业有限责任公司 一种紫外光冷燃烧除臭氧化锌滤芯材料的制备方法

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US20040046168A1 (en) * 2002-08-13 2004-03-11 Agfa-Gevaert Porous metal oxide semiconductor spectrally sensitized with metal oxide
US20060284171A1 (en) * 2005-06-16 2006-12-21 Levy David H Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
CN101138689A (zh) * 2007-07-12 2008-03-12 奇迪电器集团有限公司 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯

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JP2010505736A (ja) * 2006-10-11 2010-02-25 ビーエーエスエフ ソシエタス・ヨーロピア 表面改質されたナノ粒子状の金属酸化物、金属水酸化物および／または金属オキシ水酸化物の製造方法
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
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WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
JP2009040640A (ja) * 2007-08-09 2009-02-26 Andes Denki Kk 酸化亜鉛薄膜の製造方法

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US20040046168A1 (en) * 2002-08-13 2004-03-11 Agfa-Gevaert Porous metal oxide semiconductor spectrally sensitized with metal oxide
US20060284171A1 (en) * 2005-06-16 2006-12-21 Levy David H Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
CN101138689A (zh) * 2007-07-12 2008-03-12 奇迪电器集团有限公司 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105934535A (zh) * 2014-01-31 2016-09-07 默克专利股份有限公司 制备uv光检测器的方法
CN105940485A (zh) * 2014-01-31 2016-09-14 默克专利有限公司 半导体膜的制备
US10431704B2 (en) 2014-01-31 2019-10-01 Merck Patent Gmbh Method for producing a UV photodetector
CN109074949A (zh) * 2016-04-22 2018-12-21 西门子股份公司 HGü空气扼流线圈及制造方法
CN109074949B (zh) * 2016-04-22 2022-02-18 西门子股份公司 HGü空气扼流线圈及制造方法
US11562853B2 (en) 2016-04-22 2023-01-24 Siemens Energy Global GmbH & Co. KG High voltage direct current energy transmission (HVDCT) air-core inductor, and method for manufacturing the HVDCT air-core inductor

Also Published As

Publication number Publication date
US20120086002A1 (en) 2012-04-12
US9129801B2 (en) 2015-09-08
JP5634511B2 (ja) 2014-12-03
KR20120039638A (ko) 2012-04-25
EP2443650A1 (de) 2012-04-25
WO2010146053A1 (de) 2010-12-23
JP2012530033A (ja) 2012-11-29

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Application publication date: 20120516