JP2016534993A - 酸化インジウム含有層を製造するための配合物、当該層の製造法及び当該層の使用 - Google Patents
酸化インジウム含有層を製造するための配合物、当該層の製造法及び当該層の使用 Download PDFInfo
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- JP2016534993A JP2016534993A JP2016522346A JP2016522346A JP2016534993A JP 2016534993 A JP2016534993 A JP 2016534993A JP 2016522346 A JP2016522346 A JP 2016522346A JP 2016522346 A JP2016522346 A JP 2016522346A JP 2016534993 A JP2016534993 A JP 2016534993A
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- indium
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- layer
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- 239000000203 mixture Substances 0.000 title claims abstract description 61
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000009472 formulation Methods 0.000 title claims description 44
- 229910052738 indium Inorganic materials 0.000 claims abstract description 45
- 239000002904 solvent Substances 0.000 claims abstract description 35
- -1 alkoxide compound Chemical class 0.000 claims abstract description 29
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 7
- 239000012669 liquid formulation Substances 0.000 claims abstract description 5
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 claims abstract description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 20
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 11
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 10
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 10
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 10
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 claims description 10
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 10
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
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- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- 150000001768 cations Chemical class 0.000 claims description 6
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 claims description 5
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- 229940116333 ethyl lactate Drugs 0.000 claims description 5
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 4
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- 239000007788 liquid Substances 0.000 claims description 4
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- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 108700031620 S-acetylthiorphan Proteins 0.000 claims description 3
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 150000002825 nitriles Chemical class 0.000 claims description 2
- 150000003138 primary alcohols Chemical class 0.000 claims description 2
- 150000003333 secondary alcohols Chemical class 0.000 claims description 2
- 150000003509 tertiary alcohols Chemical class 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims 2
- 101100341029 Caenorhabditis elegans inx-3 gene Proteins 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 27
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- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 6
- 229910021617 Indium monochloride Inorganic materials 0.000 description 6
- 125000003158 alcohol group Chemical group 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 150000004703 alkoxides Chemical group 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 239000002612 dispersion medium Substances 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
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- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012916 structural analysis Methods 0.000 description 3
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
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- JNODDICFTDYODH-UHFFFAOYSA-N 2-hydroxytetrahydrofuran Chemical compound OC1CCCO1 JNODDICFTDYODH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
− 簡単に、殊に空気中で加工することができるべきであり、
− 均一に酸化物に変えることができるべきであり、
− 可能な限り低い温度で酸化物に変えることができるべきであり、かつ
− 際立った電気特性を有する層になるべきである。
− 三ハロゲン化インジウムInX3[式中、X=F、Cl、Br、Iである]を、
− 式R’2NH[式中、R'=アルキルである]の第二級アミンと、三ハロゲン化インジウムに対して8:1〜20:1のモル比で、
− 一般式ROH[式中、R=アルキルである]のアルコールの存在下に
反応させることによって製造可能な少なくとも1種のインジウムアルコキシド化合物を少なくとも1種の溶媒に溶解することによって製造可能な本発明による液状配合物によって満たされる。
[式中、R=アルキル、X=F、Cl、Br、Iであり、A=カチオン、z=当該カチオンの価数、m×z=2であり、かつx=0〜10である]のインジウムアルコキシド化合物であり、これは、なかでも第二級アミンを9:1〜10:1の比で使用して製造することができる。当該化合物は、アルコール分子ROHにより、かつ場合により反応において存在する他の溶媒により配位されていてもよい。
− 三ハロゲン化インジウムInX3[式中、X=F、Cl、Br、Iである]を、
− 式R’2NH[式中、R'=アルキルである]の第二級アミンと、三ハロゲン化インジウムに対して8:1〜20:1のモル比で、
− 一般式ROH[式中、R=アルキルである]のアルコールの存在下に
反応させる方法によって製造される。
合成
残留湿分を除去した30lの反応器中で、塩化インジウム(III)(InCl3、5.9モル)1.30kgを、保護ガス雰囲気下で撹拌することによって乾燥メタノール17.38kgに懸濁する。ジメチルアミン(2.57kg、57モル)を、マスフローコントローラ(0.86kg/h、約4時間)によって室温で計量供給し、その際、かすかな発熱反応を観察することができる。その後、反応混合物を2時間にわたって50℃で調温し、室温まで冷却し、かつ濾過する。濾過残渣を、乾燥メタノール4×500mlにより洗浄し、かつ8時間にわたって真空下(0.1mbar)で乾燥させる。材料を沸騰メタノールに溶解し、かつ−20℃で晶出させる。
得られた物質を、50mg/mlの濃度で1−メトキシ−2−プロパノールに溶解する。得られる濃縮物を、以下のとおりに調製する。濃縮物1部:1−メトキシ−2−プロパノール2部:エタノール1部。この配合物に、更にテトラヒドロフルフリルアルコール(THFA)3質量%を添加する。使用したすべての溶媒は水不含であり(<200ppm H2O)、かつ混合を不活性条件下で行う(同様に水不含)。得られた配合物を、最終的に200nmのPTFEフィルタによって濾過する。
約15mmのエッジ長さ及び約200nm厚の酸化ケイ素コーティング及びITO/金から構成されるフィンガー構造を有するドープされたケイ素基板を、上記配合物100μlで湿らせた。次いで、スピンコーティングを2000rpmで行う(30秒)。コーティングされた基板に、このコーティング操作直後に、水銀灯から発生する150〜300nmの波長範囲のUV放射を10分間照射する。引き続き、基板を、加熱プレート上で350℃の温度にて1時間加熱する。変換後、グローブボックス内で、2VDSにて電界効果移動度(線形領域における)の値μFET=14cm2/Vsを測定することができる。
合成
残留湿分を除去した500mlのガラス製丸底フラスコ中で、塩化インジウム(III)(InCl3、22.5ミリモル)5.0gを、保護ガス雰囲気下で撹拌することによって乾燥メタノール250mlに懸濁し、その際、<10質量%(秤量分に対して)のInCl3の残留物が残る。塩基のジメチルアミン(5.0g、111ミリモルに相当)の計量供給を、マスフローコントローラによって保証し、かつInCl3に対して化学量論量で室温にて5時間にわたり添加し、その際、かすかな発熱反応を初めに観察することができた。引き続き、溶液を完全に蒸発させ、残る固体を乾燥メタノール250mlで抽出し、保護ガス(N2)で濾過し、複数回(10回の操作)乾燥メタノールで洗浄し、かつ真空下(<10mbar)で室温にて12時間乾燥させる。生成物収率は、インジウム(III)クロロジメトキシドが>80モル%であった。
得られた物質を、50mg/mlの濃度で1−メトキシ−2−プロパノールに溶解する。得られる濃縮物を、以下のとおりに調製する。濃縮物1部:1−メトキシ−2−プロパノール2部:エタノール1部。この配合物に、更にテトラヒドロフルフリルアルコール(THFA)3質量%を添加する。使用したすべての溶媒は水不含であり(<200ppm H2O)、かつ混合を不活性条件下で行う(同様に水不含)。得られた配合物を、最終的に200nmのPTFEフィルタによって濾過する。
約15mmのエッジ長さ及び約200nm厚の酸化ケイ素コーティング及びITO/金から構成されるフィンガー構造を有するドープされたケイ素基板を、上記配合物100μlで湿らせた。次いで、スピンコーティングを2000rpmで行う(30秒)。コーティングされた基板に、このコーティング操作直後に、水銀灯から発生する150〜300nmの波長範囲のUV放射を10分間照射する。引き続き、基板を、加熱プレート上で350℃の温度にて1時間加熱する。変換後、グローブボックス内で、2VDSにて電界効果移動度(線形領域における)の値μFET=8cm2/Vsを測定することができる。
Claims (14)
- 液状配合物であって
− 三ハロゲン化インジウムInX3[式中、X=F、Cl、Br、Iである]を、
− 式R’2NH[式中、R’=アルキルである]の第二級アミンと、前記三ハロゲン化インジウムに対して8:1〜20:1のモル比で、
− 一般式ROH[式中、R=アルキルである]のアルコールの存在下に
反応させることによって製造可能な少なくとも1種のインジウムアルコキシド化合物を少なくとも1種の溶媒に溶解することによって製造可能な前記液状配合物。 - 前記化合物が、一般式[In6(O)(OR)12X6]2-Am z(ROH)x
[式中、R=アルキル、X=F、Cl、Br、Iであり、A=カチオン、z=前記カチオンの価数、m×z=2であり、かつx=0〜10である]を有することを特徴とする、請求項1記載の配合物。 - 前記化合物が、一般式[In6(O)(OMe)12Cl6]2-[NH2R2]+ 2(MeOH)2を有することを特徴とする、請求項2記載の配合物。
- 前記インジウムアルコキシド化合物を、前記配合物の全質量に対して0.1〜10質量%で有することを特徴とする、請求項1から3までのいずれか1項記載の配合物。
- 前記少なくとも1種の溶媒が、第一級アルコール類、第二級アルコール類、第三級アルコール類及び芳香族アルコール類、エーテル類、エステル類、芳香族炭化水素類並びにニトリル類から成る群から選択されることを特徴とする、請求項1から4までのいずれか1項記載の配合物。
- 前記少なくとも1種の溶媒が、メタノール、エタノール、ブタノール、テトラヒドロフルフリルアルコール、フェノール、2−メトキシエタノール、1−メトキシ−2−プロパノール、テトラヒドロフラン、アニソール、ブチルアセテート、1−メトキシ−2−プロピルアセテート(PGMEA)、エチルベンゾエート、エチレングリコールジアセテート、エチルラクテート、ブチルラクテート、トルエン、キシレン及びアセトニトリルから成る群から選択されることを特徴とする、請求項1から5までのいずれか1項記載の配合物。
- 少なくとも3種の溶媒を有し、前記溶媒の1種が、エチルラクテート、アニソール、テトラヒドロフルフリルアルコール、ブチルアセテート、エチレングリコールジアセテート及びエチルベンゾエートから成る群から選択され、かつ他の2種が、SATP条件下で少なくとも30℃の沸点差を有することを特徴とする、請求項6記載の配合物。
- エタノール、1−メトキシ−2−プロパノール及びテトラヒドロフルフリルアルコールの3種の前記溶媒を含むことを特徴とする、請求項1から7までのいずれか1項記載の配合物。
- 実質的に水不含であることを特徴とする、請求項1から8までのいずれか1項記載の配合物。
- 請求項1から9までのいずれか1項記載の配合物を製造する方法であって、ここで、
− 三ハロゲン化インジウムInX3[式中、X=F、Cl、Br、Iである]を、
− 式R’2NH[式中、R’=アルキルである]の第二級アミンと、前記三ハロゲン化インジウムに対して8:1〜20:1のモル比で、
− 一般式ROH[式中、R=アルキルである]のアルコールの存在下に
反応させることによって製造可能な少なくとも1種のインジウムアルコキシド化合物を少なくとも1種の溶媒と混ぜる、前記方法。 - 酸化インジウム含有層を製造するための、請求項1から9までのいずれか1項記載の配合物の使用。
- 電子部品用の半導体層又は導体層を製造するための、殊に(薄膜)トランジスタ、ダイオード又は太陽電池を製造するための、請求項1から9までのいずれか1項記載の配合物の使用。
- 請求項1から9までのいずれか1項記載の配合物を基板上に施与し、かつ前記配合物を熱及び/又は電磁放射により変換する、酸化インジウム含有層を製造する方法。
- 施与された前記配合物を、熱及び電磁放射により変換することを特徴とする、請求項13記載の方法。
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DE102009028801B3 (de) | 2009-08-21 | 2011-04-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung |
DE102009054998A1 (de) * | 2009-12-18 | 2011-06-22 | Evonik Degussa GmbH, 45128 | Verfahren zur Herstellung von Indiumchlordialkoxiden |
DE102009054997B3 (de) | 2009-12-18 | 2011-06-01 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102010043668B4 (de) | 2010-11-10 | 2012-06-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
DE102012209918A1 (de) | 2012-06-13 | 2013-12-19 | Evonik Industries Ag | Verfahren zur Herstellung Indiumoxid-haltiger Schichten |
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- 2014-04-28 KR KR1020167001619A patent/KR102123262B1/ko active IP Right Grant
- 2014-04-28 EP EP14721312.8A patent/EP3013837B1/de not_active Not-in-force
- 2014-04-28 US US14/900,821 patent/US9812330B2/en active Active
- 2014-04-28 WO PCT/EP2014/058615 patent/WO2014206599A1/de active Application Filing
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US20130116463A1 (en) * | 2010-07-21 | 2013-05-09 | Evonik Degussa Gmbh | Indium oxoalkoxides for producing coatings containing indium oxide |
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JP2016530225A (ja) * | 2013-06-25 | 2016-09-29 | エボニック デグサ ゲーエムベーハーEvonik Degussa GmbH | インジウムアルコキシド化合物を製造するための方法、当該方法に従って製造可能なインジウムアルコキシド化合物及び当該化合物の使用 |
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CN105555790B (zh) | 2018-12-28 |
KR102123262B1 (ko) | 2020-06-17 |
EP3013837A1 (de) | 2016-05-04 |
KR20160022887A (ko) | 2016-03-02 |
US9812330B2 (en) | 2017-11-07 |
JP6366702B2 (ja) | 2018-08-01 |
RU2659030C2 (ru) | 2018-06-27 |
TWI631100B (zh) | 2018-08-01 |
WO2014206599A1 (de) | 2014-12-31 |
DE102013212019A1 (de) | 2015-01-08 |
US20160141177A1 (en) | 2016-05-19 |
CN105555790A (zh) | 2016-05-04 |
EP3013837B1 (de) | 2017-05-31 |
TW201516022A (zh) | 2015-05-01 |
RU2016101886A (ru) | 2017-07-28 |
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