JP5634511B2 - 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 - Google Patents

半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 Download PDF

Info

Publication number
JP5634511B2
JP5634511B2 JP2012515463A JP2012515463A JP5634511B2 JP 5634511 B2 JP5634511 B2 JP 5634511B2 JP 2012515463 A JP2012515463 A JP 2012515463A JP 2012515463 A JP2012515463 A JP 2012515463A JP 5634511 B2 JP5634511 B2 JP 5634511B2
Authority
JP
Japan
Prior art keywords
metal oxide
zinc oxide
precursor compound
present
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012515463A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012530033A (ja
JP2012530033A5 (enExample
Inventor
フライシュハカー，フリーデリケ
ドムケ，イメ
カルポフ，アンドレイ
カストラー，マルセル
ヴロカ，フェロニカ
ヴェーバー，ロタル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of JP2012530033A publication Critical patent/JP2012530033A/ja
Publication of JP2012530033A5 publication Critical patent/JP2012530033A5/ja
Application granted granted Critical
Publication of JP5634511B2 publication Critical patent/JP5634511B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
JP2012515463A 2009-06-16 2010-06-15 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物 Expired - Fee Related JP5634511B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09162783.6 2009-06-16
EP09162783 2009-06-16
PCT/EP2010/058391 WO2010146053A1 (de) 2009-06-16 2010-06-15 Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten

Publications (3)

Publication Number Publication Date
JP2012530033A JP2012530033A (ja) 2012-11-29
JP2012530033A5 JP2012530033A5 (enExample) 2013-08-01
JP5634511B2 true JP5634511B2 (ja) 2014-12-03

Family

ID=42751990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012515463A Expired - Fee Related JP5634511B2 (ja) 2009-06-16 2010-06-15 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物

Country Status (6)

Country Link
US (1) US9129801B2 (enExample)
EP (1) EP2443650A1 (enExample)
JP (1) JP5634511B2 (enExample)
KR (1) KR20120039638A (enExample)
CN (1) CN102460641A (enExample)
WO (1) WO2010146053A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2501472A1 (de) * 2009-11-20 2012-09-26 Basf Se Mehrlagenkatalysator zur herstellung von carbonsäuren und/oder carbonsäureanhydriden mit vanadiumantimonat in wenigstens einer katalysatorlage und verfahren zur herstellung von phthalsäureanhydrid mit niedriger hotspottemperatur
WO2011073044A1 (de) 2009-12-18 2011-06-23 Basf Se Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
WO2011135514A2 (en) * 2010-04-28 2011-11-03 Basf Se Process for preparing a zinc complex in solution
US9117964B2 (en) 2010-06-29 2015-08-25 Merck Patent Gmbh Preparation of semiconductor films
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
DE102012206234A1 (de) * 2012-04-17 2013-10-17 Evonik Industries Ag Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen
JP5936568B2 (ja) 2013-03-08 2016-06-22 富士フイルム株式会社 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
US20160116652A1 (en) * 2013-06-20 2016-04-28 Merck Patent Gmbh Method for controlling the optical properties of uv filter layers
US9214288B2 (en) * 2013-09-05 2015-12-15 National Cheng Kung University Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof
GB201319263D0 (en) * 2013-10-31 2013-12-18 Montanuniversit T Leoben Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same
US10431704B2 (en) 2014-01-31 2019-10-01 Merck Patent Gmbh Method for producing a UV photodetector
US20160359060A1 (en) * 2014-01-31 2016-12-08 Merck Patent Gmbh Preparation of semiconductor films
AT518664B1 (de) * 2016-04-22 2017-12-15 Trench Austria Gmbh HGÜ-Luftdrosselspule und Verfahren zur Herstellung
CN112090170B (zh) * 2020-09-30 2022-05-06 安徽泰龙锌业有限责任公司 一种紫外光冷燃烧除臭氧化锌滤芯材料的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040046168A1 (en) * 2002-08-13 2004-03-11 Agfa-Gevaert Porous metal oxide semiconductor spectrally sensitized with metal oxide
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
EP2079664A2 (de) * 2006-10-11 2009-07-22 Basf Se Verfahren zur herstellung oberflächenmodifizierter nanopartikulärer metalloxide, metallhydroxide und/oder metalloxidhydroxide
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
CN100548434C (zh) * 2007-07-12 2009-10-14 奇迪电器集团有限公司 用于去除水中氨氮的过滤介质及其制备方法以及由该过滤介质制成的滤芯
WO2009013291A2 (en) 2007-07-25 2009-01-29 Basf Se Field effect elements
WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
JP2009040640A (ja) * 2007-08-09 2009-02-26 Andes Denki Kk 酸化亜鉛薄膜の製造方法

Also Published As

Publication number Publication date
US9129801B2 (en) 2015-09-08
CN102460641A (zh) 2012-05-16
US20120086002A1 (en) 2012-04-12
JP2012530033A (ja) 2012-11-29
WO2010146053A1 (de) 2010-12-23
KR20120039638A (ko) 2012-04-25
EP2443650A1 (de) 2012-04-25

Similar Documents

Publication Publication Date Title
JP2012530033A (ja) 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物
TWI516635B (zh) 製造半導體層之方法
JP5864434B2 (ja) 酸化インジウム含有層の形成方法、この方法により形成された酸化インジウム含有層および該酸化インジウム含有層の使用
US8546594B2 (en) Indium oxoalkoxides for producing coatings containing indium oxide
KR101725573B1 (ko) 금속 산화물-함유 층의 제조 방법
US9650396B2 (en) Indium oxoalkoxides for producing coatings containing indium oxide
CN102668086B (zh) 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管
CN104350179B (zh) 用于制备含氧化铟的层的方法
CN102858690B (zh) 制备呈溶液的锌配合物的方法
JP2016534993A (ja) 酸化インジウム含有層を製造するための配合物、当該層の製造法及び当該層の使用
US9969896B2 (en) Indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and inorganic semiconductor thin film produced thereby
Gómez-Núñez et al. Comparison of the thermal decomposition processes of several aminoalcohol-based ZnO inks with one containing ethanolamine
KR20200030267A (ko) 반도체 금속 기판 제조 방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130610

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130612

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140306

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140430

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140729

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140805

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140829

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140916

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141014

LAPS Cancellation because of no payment of annual fees