WO2010125011A3 - Verfahren zur herstellung von halbleitenden schichten - Google Patents

Verfahren zur herstellung von halbleitenden schichten Download PDF

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Publication number
WO2010125011A3
WO2010125011A3 PCT/EP2010/055499 EP2010055499W WO2010125011A3 WO 2010125011 A3 WO2010125011 A3 WO 2010125011A3 EP 2010055499 W EP2010055499 W EP 2010055499W WO 2010125011 A3 WO2010125011 A3 WO 2010125011A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
precursor compound
metal oxide
producing
ammonia
Prior art date
Application number
PCT/EP2010/055499
Other languages
English (en)
French (fr)
Other versions
WO2010125011A2 (de
Inventor
Andrey Karpov
Friederike Fleischhaker
Imme Domke
Marcel Kastler
Veronika Wloka
Lothar Weber
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Priority to US13/266,935 priority Critical patent/US8877657B2/en
Priority to JP2012507700A priority patent/JP2012525493A/ja
Priority to EP10715825A priority patent/EP2425038A2/de
Priority to CN2010800285542A priority patent/CN102803559A/zh
Publication of WO2010125011A2 publication Critical patent/WO2010125011A2/de
Publication of WO2010125011A3 publication Critical patent/WO2010125011A3/de

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Chemically Coating (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung einer Schicht enthaltend wenigstens ein halbleitendes Metalloxid auf einem Substrat, umfassend mindestens die Schritte: (A) Herstellen einer Lösung enthaltend wenigstens eine Vorläuferverbindung des wenigstens einen Metalloxids ausgewählt aus der Gruppe bestehend aus Carboxylaten von Mono-, Di- oder Polycarbonsäuren mit wenigstens drei Kohlenstoffatomen oder Derivaten von Mono-, Di- oder Polycarbonsäuren, Alkoholaten, Hydroxiden, Semicarbaziden, Carbaminaten, Hydroxamaten, Isocyanaten, Amidinen, Amidrazonen, Harnstoffderivaten, Hydroxylaminen, Oximen, Urethanen, Ammoniak, Aminen, Phosphinen, Ammonium-Verbindungen,, Aziden des entsprechenden Metalls und Mischungen davon, in wenigstens einem Lösungsmittel, (B) Aufbringen der Lösung aus Schritt (A) auf das Substrat und (C) thermisches Behandeln des Substrates aus Schritt (B) bei einer Temperatur von 20 bis 200°C, um die wenigstens eine Vorläuferverbindung in wenigstens ein halbleitendes Metalloxid zu überführen, wobei, falls in Schritt (A) elektrisch neutrales [(OH)x(NH3)yZn]z mit x, y und z unabhängig voneinander 0,01 bis 10, als Vorläuferverbindung eingesetzt wird, dieses durch Umsetzung von Zinkoxid oder Zinkhydroxid mit Ammoniak erhalten wird, ein Substrat, welches mit wenigstens einem halbleitenden Metalloxid beschichtet ist, erhältlich durch dieses Verfahren, die Verwendung dieses Substrates in elektronischen Bauteilen, sowie ein Verfahren zur Herstellung von elektrisch neutralem [(OH)x(NH3)yZn]z mit x, y und z unabhängig voneinander 0,01 bis 10, durch Umsetzung von Zinkoxid und/oder Zinkhydroxid mit Ammoniak.
PCT/EP2010/055499 2009-04-28 2010-04-26 Verfahren zur herstellung von halbleitenden schichten WO2010125011A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/266,935 US8877657B2 (en) 2009-04-28 2010-04-26 Process for producing semiconductive layers
JP2012507700A JP2012525493A (ja) 2009-04-28 2010-04-26 半導体層の製造法
EP10715825A EP2425038A2 (de) 2009-04-28 2010-04-26 Verfahren zur herstellung von halbleitenden schichten
CN2010800285542A CN102803559A (zh) 2009-04-28 2010-04-26 生产半导体层的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09158896 2009-04-28
EP09158896.2 2009-04-28

Publications (2)

Publication Number Publication Date
WO2010125011A2 WO2010125011A2 (de) 2010-11-04
WO2010125011A3 true WO2010125011A3 (de) 2011-03-31

Family

ID=42813161

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/055499 WO2010125011A2 (de) 2009-04-28 2010-04-26 Verfahren zur herstellung von halbleitenden schichten

Country Status (7)

Country Link
US (1) US8877657B2 (de)
EP (1) EP2425038A2 (de)
JP (1) JP2012525493A (de)
KR (1) KR20120005536A (de)
CN (1) CN102803559A (de)
TW (1) TWI516635B (de)
WO (1) WO2010125011A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102612406A (zh) * 2009-11-20 2012-07-25 巴斯夫欧洲公司 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法
WO2011073044A1 (de) 2009-12-18 2011-06-23 Basf Se Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
US8901320B2 (en) 2010-04-13 2014-12-02 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
WO2011135514A2 (en) 2010-04-28 2011-11-03 Basf Se Process for preparing a zinc complex in solution
US8865000B2 (en) 2010-06-11 2014-10-21 Basf Se Utilization of the naturally occurring magnetic constituents of ores
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
DE102012206234A1 (de) * 2012-04-17 2013-10-17 Evonik Industries Ag Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen
CN103236402B (zh) * 2013-04-27 2016-02-03 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及显示装置
CN105940485A (zh) * 2014-01-31 2016-09-14 默克专利有限公司 半导体膜的制备
EP3099838A1 (de) * 2014-01-31 2016-12-07 Merck Patent GmbH Verfahren zur herstellung eines uv-photodetektors
US9515272B2 (en) 2014-11-12 2016-12-06 Rohm And Haas Electronic Materials Llc Display device manufacture using a sacrificial layer interposed between a carrier and a display device substrate
KR20180085728A (ko) * 2015-11-24 2018-07-27 바스프 에스이 얇은 무기 필름의 생성 방법
TWI702186B (zh) 2018-03-19 2020-08-21 日商理光股份有限公司 形成氧化物用的塗佈液、製造氧化物薄膜的方法及製造場效電晶體的方法
EP3666782A1 (de) * 2018-12-11 2020-06-17 Umicore Ag & Co. Kg Lithiumalkylaluminate, verwendung eines lithiumalkylaluminats als transferreagenz, verfahren zur übertragung wenigstens eines restes r, verbindungen e(x)q-prp und deren verwendung, substrat und verfahren zur herstellung von lithiumalkylaluminaten

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004149367A (ja) * 2002-10-31 2004-05-27 Japan Science & Technology Agency 酸化亜鉛粒子又は膜製造用水溶液及び酸化亜鉛粒子又は膜の製造方法
WO2006138071A1 (en) * 2005-06-16 2006-12-28 Eastman Kodak Company Thin film transistors comprising zinc-oxide-based semiconductor materials
US20080057631A1 (en) * 2006-09-04 2008-03-06 Taiwan Tft Lcd Association Thin film transistor, method of fabricating active layer thereof, and liquid crystal display
EP1993122A2 (de) * 2007-05-16 2008-11-19 Xerox Corporation Halbleiterschicht für Dünnschichttransistoren
WO2009010142A2 (en) * 2007-07-17 2009-01-22 Merck Patent Gmbh Organometallic zinc coumpoud for preparing zinc oxide films

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020041928A1 (en) * 1997-03-26 2002-04-11 Leonid V. Budaragin Method for coating substrate with metal oxide coating
JP3327811B2 (ja) * 1997-05-13 2002-09-24 キヤノン株式会社 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子及び半導体素子基板の製造方法
US7604839B2 (en) * 2000-07-31 2009-10-20 Los Alamos National Security, Llc Polymer-assisted deposition of films
US6514414B1 (en) * 2000-09-08 2003-02-04 Clariant Finance (Bvi) Limited Process for separation and removal of iron ions from basic zinc solution
US20070287221A1 (en) * 2006-06-12 2007-12-13 Xerox Corporation Fabrication process for crystalline zinc oxide semiconductor layer
US7906415B2 (en) * 2006-07-28 2011-03-15 Xerox Corporation Device having zinc oxide semiconductor and indium/zinc electrode
US7652339B2 (en) * 2007-04-06 2010-01-26 Xerox Corporation Ambipolar transistor design
WO2009013291A2 (en) 2007-07-25 2009-01-29 Basf Se Field effect elements
WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
CN101952988B (zh) 2008-02-05 2015-12-16 巴斯夫欧洲公司 苝半导体及其制备方法和用途
KR101535696B1 (ko) 2008-02-05 2015-07-09 바스프 에스이 릴렌-(π-억셉터) 공중합체로부터 제조된 반도체 재료
WO2009144205A1 (en) 2008-05-30 2009-12-03 Basf Se Rylene-based semiconductor materials and methods of preparation and use thereof
TWI471328B (zh) 2008-07-02 2015-02-01 Basf Se 以二噻吩并〔２，３－ｄ：２’，３’－ｄ’〕苯并〔１，２－ｂ：４，５－ｂ’〕二噻吩為主之高效能溶液可加工之半導體
JP5735418B2 (ja) 2008-07-02 2015-06-17 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ポリ（５，５’−ビス（チオフェン−２−イル）−ベンゾ［２，１−ｂ；３，４−ｂ’］ジチオフェン）、及び半導体ポリマーを加工可能な高機能溶液としてのその使用方法
US20110101329A1 (en) 2008-07-02 2011-05-05 Basf Se High performance solution processable semiconducting polymers based on al-ternating donor acceptor copolymers
CN102119185A (zh) 2008-08-11 2011-07-06 巴斯夫欧洲公司 聚苯并噻吩聚合物及其制备方法
JP5064480B2 (ja) * 2008-12-26 2012-10-31 花王株式会社 セルロース繊維の懸濁液とその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004149367A (ja) * 2002-10-31 2004-05-27 Japan Science & Technology Agency 酸化亜鉛粒子又は膜製造用水溶液及び酸化亜鉛粒子又は膜の製造方法
WO2006138071A1 (en) * 2005-06-16 2006-12-28 Eastman Kodak Company Thin film transistors comprising zinc-oxide-based semiconductor materials
US20080057631A1 (en) * 2006-09-04 2008-03-06 Taiwan Tft Lcd Association Thin film transistor, method of fabricating active layer thereof, and liquid crystal display
EP1993122A2 (de) * 2007-05-16 2008-11-19 Xerox Corporation Halbleiterschicht für Dünnschichttransistoren
WO2009010142A2 (en) * 2007-07-17 2009-01-22 Merck Patent Gmbh Organometallic zinc coumpoud for preparing zinc oxide films

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 200443, Derwent World Patents Index; AN 2004-454116, XP002617674 *
MEYERS S T ET AL: "Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 20081224 AMERICAN CHEMICAL SOCIETY USA, vol. 130, no. 51, 24 December 2008 (2008-12-24), pages 17603 - 17609, XP002617673, DOI: DOI:10.1021/JA808243K *
SCHNEIDER J J ET AL: "A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material", ADVANCED MATERIALS 20080917 WILEY-VCH VERLAG DE, vol. 20, no. 18, 17 September 2008 (2008-09-17), pages 3383 - 3387, XP002617672, DOI: DOI:10.1002/ADMA.200800819 *

Also Published As

Publication number Publication date
US20120043537A1 (en) 2012-02-23
CN102803559A (zh) 2012-11-28
US8877657B2 (en) 2014-11-04
JP2012525493A (ja) 2012-10-22
KR20120005536A (ko) 2012-01-16
WO2010125011A2 (de) 2010-11-04
TW201043730A (en) 2010-12-16
EP2425038A2 (de) 2012-03-07
TWI516635B (zh) 2016-01-11

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